2N4338/4339/4340/4341 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Max (mA) 2N4338 -0.3 to -1 -50 0.6 0.6 2N4339 -0.6 to -1.8 -50 0.8 1.5 2N4340 -1 to -3 -50 1.3 3.6 2N4341 -2 to -6 -50 2 9 FEATURES BENEFITS APPLICATIONS D D D D D Full Performance from Low-Voltage Power Supply: Down to 1 V D Low Signal Loss/System Error D High System Sensitivity D High-Quality Low-Level Signal Amplification D High-Gain, Low-Noise Amplifiers D Low-Current, Low-Voltage Battery-Powered Amplifiers D Infrared Detector Amplifiers D Ultrahigh Input Impedance Pre-Amplifiers Low Cutoff Voltage: 2N4338 <1 V High Input Impedance Very Low Noise High Gain: AV = 80 @ 20 mA DESCRIPTION The 2N4338/4339/4340/4341 n-channel JFETs are designed for sensitive amplifier stages at low- to mid-frequencies. Low cut-off voltages accommodate low-level power supplies and low leakage for improved system accuracy. The TO-206AA (TO-18) package is hermetically sealed and suitable for military processing (see Military Information). For similar products in TO-226AA (TO-92) and TO-236 (SOT-23) packages, see the J/SST201 series data sheet. TO-206AA (TO-18) S 1 2 3 D G and Case Top View ABSOLUTE MAXIMUM RATINGS Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -50 V Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 175_C Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Notes a. Derate 2 mW/_C above 25_C For applications information see AN102 and AN106. Document Number: 70240 S-04028--Rev. E, 04-Jun-01 www.vishay.com 7-1 2N4338/4339/4340/4341 Vishay Siliconix SPECIFICATIONS FOR 2N4338 AND 2N4339 (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N4338 Parameter Symbol Test Conditions Typa Min V(BR)GSS IG = -1 mA , VDS = 0 V -57 -50 VGS(off) VDS = 15 V, ID = 0.1 mA 2N4339 Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V VGS = -30 V, VDS = 0 V Gate Reverse Current Gate Operating Currentb -0.3 IGSS TA = 150_C 0.2 -50 -1 -0.6 0.6 0.5 -1.8 V 1.5 mA -2 -100 -100 pA -4 -100 -100 nA 50 50 IG VDG = 15 V, ID = 0.1 mA -2 Drain Cutoff Current ID(off) VDS = 15 V, VGS = -5 V 2 Gate-Source Forward Voltagec VGS(F) IG = 1 mA , VDS = 0 V 0.7 pA V Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-Source Input Capacitance gfs 0.6 1.8 0.8 2.4 mS 5 15 mS 2500 1700 W 5 7 7 1.5 3 3 VDS = 15 V, VGS = 0 V, f = 1 kHz gos rds(on) VDS = 0 V, VGS = 0 V, f = 1 kHz Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltagec en VDS = 10 V, VGS = 0 V, f = 1 kHz Noise Figure NF VDS = 15 V, VGS = 0 V f = 1 kHz, RG = 1 MW pF nV Hz 6 1 1 dB SPECIFICATIONS FOR 2N4340 AND 2N4341 (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N4340 Parameter Symbol Test Conditions Typa Min V(BR)GSS IG = -1 mA , VDS = 0 V -57 -50 VGS(off) VDS = 15 V, ID = 0.1 mA Max 2N4341 Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V VGS = -30 V, VDS = 0 V Gate Reverse Current Gate Operating Currentb IGSS IG Drain Cutoff Current ID(off) Gate-Source Forward Voltage VGS(F) www.vishay.com 7-2 -1 TA = 150_C VDG = 15 V, ID = 0.1 mA VDS = 15 V 1.2 -3 -2 3.6 3 V -6 9 mA -2 -100 -100 pA -4 -100 -100 nA -2 VGS = -5 V 2 VGS = -10 V 3 IG = 1 mA , VDS = 0 V -50 0.7 50 pA 70 V Document Number: 70240 S-04028--Rev. E, 04-Jun-01 2N4338/4339/4340/4341 Vishay Siliconix SPECIFICATIONS FOR 2N4340 AND 2N4341 (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N4340 Parameter Symbol Typa Test Conditions 2N4341 Min Max Min Max Unit 1.3 3 2 4 mS 30 60 mS 1500 800 W 5 7 7 1.5 3 3 Dynamic Common-Source Forward Transconductance gfs VDS = 15 V, VGS = 0 V, f = 1 kHz Common-Source Output Conductance gos Drain-Source On-Resistance rds(on) Common-Source Input Capacitance VDS = 0 V, VGS = 0 V, f = 1 kHz Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltagec en VDS = 10 V, VGS = 0 V, f = 1 kHz Noise Figure NF VDS = 15 V, VGS = 0 V f = 1 kHz, RG = 1 MW pF nV Hz 6 1 1 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms, duty cycle v3%. c. This parameter not registered with JEDEC. dB NPA TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage Gate Leakage Current 5 8 4 6 3 gfs IDSS 4 2 2 1 0 0 0 -1 -2 -3 -4 VGS(off) - Gate-Source Cutoff Voltage (V) Document Number: 70240 S-04028--Rev. E, 04-Jun-01 -5 ID = 100 mA 500 mA TA = 125_C 1 nA IG - Gate Leakage (A) IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 10 nA gfs - Forward Transconductance (mS) IDSS - Saturation Drain Current (mA) 10 IGSS @ 125_C 100 pA 500 mA 10 pA ID = 100 mA TA = 25_C 1 pA IGSS @ 25_C 0.1 pA 0 6 12 18 24 30 VDG - Drain-Gate Voltage (V) www.vishay.com 7-3 2N4338/4339/4340/4341 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage Common-Source Forward Transconductance vs. Drain Current 2 10 gos 1200 8 6 900 rDS 600 4 300 2 rDS @ ID = 100 mA, VGS = 0 V gos @ VDS= 10 V, VGS = 0 V, f = 1 kHz 0 gfs - Forward Transconductance (mS) VGS(off) = -1.5 V gos - Output Conductance (S) rDS(on) - Drain-Source On-Resistance ( ) 1500 0 0 -1 -2 -3 -4 1.6 TA = -55_C 1.2 25_C 0.8 125_C 0.4 0 0.01 -5 0.1 VGS(off) - Gate-Source Cutoff Voltage (V) 1 ID - Drain Current (mA) Output Characteristics Output Characteristics 400 2 VGS(off) = -0.7 V VGS(off) = -1.5 V VGS = 0 V 320 1.6 ID - Drain Current (mA) ID - Drain Current (A) VDS = 10 V f = 1 kHz -0.1 V 240 -0.2 V 160 -0.3 V 80 VGS = 0 V 1.2 -0.3 V 0.8 -0.6 V 0.4 -0.5 V -0.4 V -0.9 V -1.2 V 0 0 0 4 8 12 16 20 0 VDS - Drain-Source Voltage (V) 4 8 12 16 VDS - Drain-Source Voltage (V) Output Characteristics Output Characteristics 300 1 VGS(off) = -0.7 V VGS(off) = -1.5 V 240 0.8 -0.3 V ID - Drain Current (mA) VGS = 0 V ID - Drain Current (A) -0.1 V 180 -0.2 V 120 -0.3 V 60 VGS = 0 V 0.6 -0.6 V 0.4 0.2 -0.4 V -0.9 V -0.5 V -1.2 V 0 0 0 0.1 0.2 0.3 VDS - Drain-Source Voltage (V) www.vishay.com 7-4 20 0.4 0.5 0 0.2 0.4 0.6 0.8 1.0 VDS - Drain-Source Voltage (V) Document Number: 70240 S-04028--Rev. E, 04-Jun-01 2N4338/4339/4340/4341 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Transfer Characteristics Transfer Characteristics 2 500 VGS(off) = -0.7 V VDS = 10 V VGS(off) = -1.5 V VDS = 10 V 1.6 400 ID - Drain Current (mA) ID - Drain Current (A) TA = -55_C TA = -55_C 300 25_C 200 125_C 100 0 1.2 25_C 0.8 0.4 125_C 0 0 -0.1 -0.2 -0.3 -0.4 0 -0.5 -0.4 VGS - Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltage -1.6 -2 Transconductance vs. Gate-Source Voltage 1.2 VGS(off) = -1.5 V VDS = 10 V f = 1 kHz gfs - Forward Transconductance (mS) VGS(off) = -0.7 V gfs - Forward Transconductance (mS) -1.2 4 1.5 TA = -55_C 25_C 0.9 0.6 125_C 0.3 0 VDS = 10 V f = 1 kHz 3.2 2.4 TA = -55_C 25_C 1.6 0.8 125_C 0 0 -0.1 -0.2 -0.3 -0.4 0 -0.5 VGS - Gate-Source Voltage (V) -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V) Circuit Voltage Gain vs. Drain Current On-Resistance vs. Drain Current 200 2000 g fs R L 160 1 ) R Lg os Assume VDD = 15 V, VDS = 5 V 120 10 V RL + ID 80 rDS(on) - Drain-Source On-Resistance ( ) AV + AV - Voltage Gain -0.8 VGS - Gate-Source Voltage (V) VGS(off) = -0.7 V -1.5 V 40 0 TA = 25_C 1600 VGS(off) = -0.7 V 1200 800 -1.5 V 400 0 0.01 0.1 ID - Drain Current (mA) Document Number: 70240 S-04028--Rev. E, 04-Jun-01 1 0.01 0.1 1 ID - Drain Current (mA) www.vishay.com 7-5 2N4338/4339/4340/4341 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Input Capacitance vs. Gate-Source Voltage Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 10 5 Crss - Reverse Feedback Capacitance (pF) f = 1 MHz Ciss - Input Capacitance (pF) 8 6 VDS = 0 V 4 10 V 2 0 f = 1 MHz 4 3 VDS = 0 V 2 1 10 V 0 0 -4 -8 -12 -16 -20 0 VGS - Gate-Source Voltage (V) -12 -16 -20 Equivalent Input Noise Voltage vs. Frequency 20 VGS(off) = -1.5 V VDS = 10 V f = 1 kHz VDS = 10 V 2.4 Hz 16 en - Noise Voltage nV / gos - Output Conductance (S) -8 VGS - Gate-Source Voltage (V) Output Conductance vs. Drain Current 3 -4 1.8 TA = -55_C 0.8 25_C 0.4 ID = 100 mA 12 8 ID = IDSS 4 125_C 0 0 0.01 0.1 ID - Drain Current (mA) www.vishay.com 7-6 1 10 100 1k 10 k 100 k f - Frequency (Hz) Document Number: 70240 S-04028--Rev. E, 04-Jun-01