2N4338/4339/4340/4341
Vishay Siliconix
Document Number: 70240
S-04028—Rev. E, 04-Jun-01 www.vishay.com
7-1
N-Channel JFETs
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Max (mA)
2N4338 –0.3 to – 1 –50 0.6 0.6
2N4339 –0.6 to –1.8 –50 0.8 1.5
2N4340 –1 to –3 –50 1.3 3.6
2N4341 –2 to –6 –50 2 9
FEATURES BENEFITS APPLICATIONS
DLow Cutoff Voltage: 2N4338 <1 V
DHigh Input Impedance
DVery Low Noise
DHigh Gain: AV = 80 @ 20 mA
DFull Performance from Low-Voltage
Power Supply: Down to 1 V
DLow Signal Loss/System Error
DHigh System Sensitivity
DHigh-Quality Low-Level Signal
Amplification
DHigh-Gain, Low-Noise Amplifiers
DLow-Current, Low-Voltage
Battery-Powered Amplifiers
DInfrared Detector Amplifiers
DUltrahigh Input Impedance
Pre-Amplifiers
DESCRIPTION
The 2N4338/4339/4340/4341 n-channel JFETs are designed
for sensitive amplifier stages at low- to mid-frequencies. Low
cut-off voltages accommodate low-level power supplies and
low leakage for improved system accuracy.
The TO-206AA (TO-18) package is hermetically sealed and
suitable for military processing (see Military Information). For
similar products in TO-226AA (TO-92) and TO-236 (SOT-23)
packages, see the J/SST201 series data sheet.
D
S
G and Case
TO-206AA
(TO-18)
Top View
1
23
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage –50 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature –65 to 200_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 175_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
Power Dissipationa300 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2 mW/_C above 25_C
For applications information see AN102 and AN106.
2N4338/4339/4340/4341
Vishay Siliconix
www.vishay.com
7-2 Document Number: 70240
S-04028—Rev. E, 04-Jun-01
SPECIFICATIONS FOR 2N4338 AND 2N4339 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N4338 2N4339
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Static
Gate-Source Breakdown Voltage V(BR)GSS IG = –1 mA , VDS = 0 V –57 –50 –50
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 0.1 mA–0.3 –1–0.6 –1.8 V
Saturation Drain CurrentbIDSS VDS = 15 V, VGS = 0 V 0.2 0.6 0.5 1.5 mA
VGS = –30 V, VDS = 0 V –2–100 –100 pA
Gate Reverse Current IGSS TA = 150_C–4–100 –100 nA
Gate Operating CurrentbIGVDG = 15 V, ID = 0.1 mA –2
Drain Cutoff Current ID(off) VDS = 15 V, VGS = –5 V 2 50 50 pA
Gate-Source Forward VoltagecVGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source
Forward T ransconductance gfs 0.6 1.8 0.8 2.4 mS
Common-Source
Output Conductance gos
VDS = 15 V, VGS = 0 V, f = 1 kHz 5 15 mS
Drain-Source On-Resistance rds(on) VDS = 0 V, VGS = 0 V, f = 1 kHz 2500 1700 W
Common-Source
Input Capacitance Ciss 5 7 7
Common-Source
Reverse Transfer Capacitance Crss
VDS = 15 V, VGS = 0 V, f = 1 MHz 1.5 3 3 pF
Equivalent Input Noise VoltagecenVDS = 10 V, VGS = 0 V, f = 1 kHz 6nV⁄
√Hz
Noise Figure NF VDS = 15 V, VGS = 0 V
f = 1 kHz, RG = 1 MW1 1 dB
SPECIFICATIONS FOR 2N4340 AND 2N4341 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N4340 2N4341
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Static
Gate-Source Breakdown Voltage V(BR)GSS IG = –1 mA , VDS = 0 V –57 –50 –50
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 0.1 mA–1 –3–2–6V
Saturation Drain CurrentbIDSS VDS = 15 V, VGS = 0 V 1.2 3.6 3 9 mA
VGS = –30 V, VDS = 0 V –2–100 –100 pA
Gate Reverse Current IGSS TA = 150_C–4–100 –100 nA
Gate Operating CurrentbIGVDG = 15 V, ID = 0.1 mA –2
VGS = –5 V 2 50 pA
Drain Cutoff Current ID(off) VDS = 15 V VGS = –10 V 3 70
Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V
2N4338/4339/4340/4341
Vishay Siliconix
Document Number: 70240
S-04028—Rev. E, 04-Jun-01 www.vishay.com
7-3
SPECIFICATIONS FOR 2N4340 AND 2N4341 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N4340 2N4341
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Dynamic
Common-Source
Forward Transconductance gfs 1.3 3 2 4 mS
Common-Source
Output Conductance gos
VDS = 15 V, VGS = 0 V, f = 1 kHz 30 60 mS
Drain-Source On-Resistance rds(on) VDS = 0 V, VGS = 0 V, f = 1 kHz 1500 800 W
Common-Source
Input Capacitance Ciss 5 7 7
Common-Source
Reverse Transfer Capacitance Crss
VDS = 15 V, VGS = 0 V, f = 1 MHz 1.5 3 3 pF
Equivalent Input Noise VoltagecenVDS = 10 V, VGS = 0 V, f = 1 kHz 6nV⁄
√Hz
Noise Figure NF VDS = 15 V, VGS = 0 V
f = 1 kHz, RG = 1 MW1 1 dB
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NPA
b. Pulse test: PW v300 ms, duty cycle v3%.
c. This parameter not registered with JEDEC.
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
10
0
8
6
4
2
0–5–4–3–2–10181262430
5
4
1
3
2
0
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage Gate Leakage Current
VGS(off) – Gate-Source Cutoff Voltage (V) VDG – Drain-Gate Voltage (V)
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
gfs IDSS
IGSS @ 125_C
IGSS @ 25_C
TA = 125_C
TA = 25_C
500 mA
500 mA
ID = 100 mA
ID = 100 mA
gfs – Forward Transconductance (mS)
IDSS – Saturation Drain Current (mA)
IG – Gate Leakage (A)
2N4338/4339/4340/4341
Vishay Siliconix
www.vishay.com
7-4 Document Number: 70240
S-04028—Rev. E, 04-Jun-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
1500
0–3–5–4–2–1
1200
900
600
300
00.01 0.1 1
2
1.6
0.8
0.4
0
10
8
4
2
0
400
01216420
320
160
80
0
2
012168420
1.6
1.2
0.8
0.4
0
Output Characteristics
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage Common-Source Forward Transconductance
vs. Drain Current
Output Characteristics
ID – Drain Current (mA)VGS(off) – Gate-Source Cutoff Voltage (V)
VDS – Drain-Source Voltage (V) VDS – Drain-Source Voltage (V)
TA = –55_C
125_C
VGS = 0 V
–0.2 V
–0.4 V
VGS = 0 V
–0.6 V
–0.9 V
–0.1 V
–0.3 V
rDS @ ID = 100 mA, VGS = 0 V
gos @ VDS= 10 V, VGS = 0 V, f = 1 kHz
rDS
gos
VGS(off) = –1.5 V
–0.3 V
6 1.2
240
8
VDS = 10 V
f = 1 kHz
VGS(off) = –0.7 V VGS(off) = –1.5 V
–1.2 V
–0.5 V
Output Characteristics
300
0 0.5
240
180
120
60
0
VDS – Drain-Source Voltage (V)
0.1 0.2 0.3 0.4
VGS = 0 V –0.1 V
–0.2 V
–0.3 V
–0.4 V
VGS(off) = –0.7 V
–0.5 V
Output Characteristics
1
0 1.0
0.8
0.6
0.4
0.2
0
VDS – Drain-Source Voltage (V)
0.2 0.4 0.6 0.8
VGS = 0 V –0.3 V
–0.6 V
–0.9 V
VGS(off) = –1.5 V
–1.2 V
25_C
rDS(on) – Drain-Source On-Resistance ( Ω )
gos – Output Conductance (µS)
gfs – Forward Transconductance (mS)
ID – Drain Current (mA)
ID – Drain Current (µA)
ID – Drain Current (mA)
ID – Drain Current (µA)
2N4338/4339/4340/4341
Vishay Siliconix
Document Number: 70240
S-04028—Rev. E, 04-Jun-01 www.vishay.com
7-5
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
500
0–0.3–0.2–0.1 –0.4 –0.5
400
300
200
100
0
Transfer Characteristics
VGS – Gate-Source Voltage (V)
TA = –55_C
125_C
VGS(off) = –0.7 V VDS = 10 V
25_C
1.5
0–0.3 –0.4–0.2–0.1 –0.5
1.2
0.9
0.6
0.3
0
Transconductance vs. Gate-Source Voltage
VGS(off) = –0.7 V
TA = –55_C
125_C
VGS – Gate-Source Voltage (V)
VDS = 10 V
f = 1 kHz
25_C
2
0–1.2 –1.6 –2–0.8–0.4
1.6
1.2
0.8
0.4
0
Transfer Characteristics
VGS – Gate-Source Voltage (V)
TA = –55_C
125_C
VGS(off) = –1.5 V
25_C
VDS = 10 V
4
–1.2 –2–1.6–0.8–0.40
3.2
2.4
1.6
0.8
0
Transconductance vs. Gate-Source Voltage
VGS(off) = –1.5 V
TA = –55_C
125_C
VGS – Gate-Source Voltage (V)
25_C
VDS = 10 V
f = 1 kHz
0.1 10.01 0.01 0.1 1
200
160
120
80
40
0
2000
1600
1200
800
400
0
ID – Drain Current (mA)
AV+gfs RL
1)RLgos
RL+10 V
ID
Assume VDD = 15 V, VDS = 5 V
VGS(off) = –0.7 V
–1.5 V
Circuit Voltage Gain vs. Drain Current On-Resistance vs. Drain Current
ID – Drain Current (mA)
TA = 25_C
VGS(off) = –0.7 V
–1.5 V
ID – Drain Current (µA)
ID – Drain Current (mA)
rDS(on) – Drain-Source On-Resistance ( Ω ) gfs – Forward Transconductance (mS)
gfs – Forward Transconductance (mS)
AV – Voltage Gain
2N4338/4339/4340/4341
Vishay Siliconix
www.vishay.com
7-6 Document Number: 70240
S-04028—Rev. E, 04-Jun-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
10 100 1 k 100 k10 k
10
0–12 –16 –20–8–4
8
6
4
2
0
5
0–12 –20–16–8–4
4
3
2
1
0
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
VGS – Gate-Source Voltage (V)
VDS = 0 V
10 V
f = 1 MHz
VGS – Gate-Source Voltage (V)
Common-Source Input Capacitance
vs. Gate-Source Voltage
VDS = 0 V
10 V
f = 1 MHz
20
16
12
8
4
0
Output Conductance vs. Drain Current
ID – Drain Current (mA)
VDS = 10 V
f = 1 kHz
TA = –55_C
125_C
Equivalent Input Noise Voltage vs. Frequency
f – Frequency (Hz)
VDS = 10 V
ID = 100 mA
ID = IDSS
3
2.4
1.8
0.8
0.4
00.01 0.1 1
VGS(off) = –1.5 V
25_C
en – Noise Voltage nV / Hz
gos – Output Conductance (µS) Ciss – Input Capacitance (pF)
Crss – Reverse Feedback Capacitance (pF)
