MoToRom
SEMICONDUCTOR TECHNICAL DATA
. .
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by 2N3764~WD
2N3764JTX, JTXV, JANS
Processedper MIL+-19500/396
PNP Silicon
Smal14ignal Transistor
..designed for genera~urpose switching applications.
Emtisr+ase Vohge 5.0 Vdo
Colleotor Current Cotinuous *1.5 Ado
Device Dissipation
@TA =25°C 1.0 Watts
Derate above %*C 5.71 mWPC
Operating Junotion and Storage .,,~r,‘$? ft TJ, Tstg -55 to 200 %
Temperature Range :J~*””
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ELECTRICAL CH~~Cl~lSTl= UA. 25°Cunless othewise noted.)
‘r’ ““’~~~’Characterlstlc
,, .j<$ Symbol IMn Max Unit
OFF CHARA_tiCS
Collsotor-#Er*dwn Voltage(l) V(BR)CEO Vdc
#
V(BR)CBO Vdo
40
V(BR)EBO 5a Vdo
Collsotor Cutoff Current
NCB =20 Vdo,VEB =2.0 Vdo) lc~ @do
NCB =20 Vdo, VEB =2.0 Vdo, TA. 150”C) 0.1
150
Colleotor Cutoff Current ICBO fldc
&CB =20 Vdo) 0.1
Emtier Cutoff Current WEB= 2.0 Vdc, Ic =O) lEBO 0.2 @dc
RW O
9193
@M-ROLA
@Motorola,Im. 1994
2N37U SERIES
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Deltafro,q:wrn+n MeaeuredValuea Mln Mu
AICEX *I 00 %of Intiai Value
or*I O nAdc
whicheverisgreater
AhFE *15 YO of InitialValue
(1)Pulsed.PulseWdth 250toMO k, D* Qcle 1.0to2.0%.
COMMERCIALPLUSANDMIUAEROSMALLSIGNALTRANSISTORDATA
3-58
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2N3764 SERIES
PACWGE DIMENSIONS
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@MO~ROLA 1PHW41011-2 PRIN~D INUSA WW MPWPOD CPTO YDACAA 2N37WTWD
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