IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTP34N65X2
IXTH34N65X2
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
ISVGS = 0V 34 A
ISM Repetitive, pulse Width Limited by TJM 136 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 390 ns
QRM 4.2 μC
IRM 21.8 A
IF = 17A, -di/dt = 100A/μs
VR = 100V
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 20 33 S
RGi Gate Input Resistance 0.90
Ciss 3000 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 2180 pF
Crss 1.7 pF
Co(er) 125 pF
Co(tr) 490 pF
td(on) 30 ns
tr 48 ns
td(off) 68 ns
tf 30 ns
Qg(on) 54 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 15 nC
Qgd 20 nC
RthJC 0.23 C/W
RthCS TO-220 0.50 C/W
TO-247 0.21 C/W
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10 (External)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS