SAMSUNG SEMICONDUCTOR INC LE D ff eseui4a 0007693 4 i MJE172__ PNP EPITAXIAL SILICON TRANSISTOR T-33-17 LOW FREQUENCY AMPLIFIER LOW CURRENT, HIGH SPEED 70-126 SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS (T,=25C) 1, Emitter 2. Collector 3. Base Characteristic _ Symbol Rating Unit Collector-Base Voltage . Veo -100 Vv | Cokector-Emitter Voltage Veeo ~80 Vv * Emitter-Base Voltage =~ Veeo ~7 Vv Base Current la -1 A _ Collector Current (DC} le r3 4 A : Collector Current (Pulse) le - -6 A | Collector Dissipation (T2=25C) | Pe - 1.5 w . Derate above 25C 0.012 W/C | Collector Dissipation (To=25C) | Pe 12.5 w Derate above 25C 0.1 WiC | Junction Temperature Tj . 150 C Storage Temperature Tstg ~65~150 C _* Refer to MJE170 for graphs ELECTRICAL CHARACTERISTICS (T, =25C) G58 samsuna SEMICONDUCTOR Characteristic Symbol Test Condition Min Max Unit Cokector-Emitter Sustaining Voltage | Vceo(sus) Is=10mA, lg=0 80 v Collector Cutoff Current lao Vea=100V, k=O -01 pA . Vca=100V, tt=0, Te=150C -0.1 mA Emitter Cutoff Current - les Vep=7V, Ic=0 . -0.1 pA DC Curent Gain - | Ree LMce=1V, be=-100mA 50 250 : . Vee=1V, b=500mA 30 . Vee=1V, lb=1.5A 12 - .Cotector Emitter Saturation Vottage | Vce (sat) lb=500mA, Ip=SOmA -90.3 Vv b=1.5A, la=150mA -0.9 v . =3.0A, ls=6O00mA -1.7 Vv Base-Emitter Saturation Voltage Vee (sat) lb=-1.5A, lp=150mA -1.5 Vv . . k= 3.0A, Ip=6OOMA -2.0- Vv. Base-Emitter On Voltage Vee (on) Vee=1V, k=-500MA -12 Vv Current Gain Bandwidth Product | f; Vee==10V, e=100mA, f=1OMHz 50 . MHz Cofector Output Capacitance ~ Cob Vos=10V, le=0, f=0.1MHz 50 pF 268 SAMSUNG SEMICONDUCTOR INC ANE D B eceuiae OOO7L94 & i MJE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR - - - . T~ 327-07 DESIGNED FOR LOW POWER AUDIO. AMPLIFIER AND LOW CURRENT , 70-126 HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS (Ta =25C) Characteristic Symbol Rating Unit Collector-Base Voltage: MJE180 | Veao 80 v I : MJE181 80 Vv i . : MJE182 100 Vv i Collector-Emitter Voltage . 2 : MJE180 Vceo 40 Vv } : MJET81 60 Vv : : MJE182 80 Vv ; Emitter-Base Voltage Veao 7 Vv : Collector Gurrent (DC) Io 3 A ! Collector Current (Pulse) Io 6 A : : Base Current (DC) ls 1 A 1. Emitter 2, Collector 3, Base | Cotlector Dissipation (T.=25C) | Po _ 15 Ww , Collector Dissipation (Tc=25C) Po 12.6 WwW Junction Temperature Tj 150 C Storage Temperature Tstg 85~150 C ELECTRICAL CHARACT ERISTICS (T,=25C) . ce SAMSUNG SEMICONDUCTOR - Characteristic Symbol Test Condition Min Max Unit Collector Emitter Sustaining Voltage | Vceo(sus) i : MJE180 lc=10mMA, lb=0 40 Vv. i >: MJE181 : 60 v : MJE182 80 i vo Collector Cutoff Current : MJE180 lepo Vce=60V, ip=O . 0.1 pA . . : MJE181 Vci=60V, le=O 0.1 pA : MJE182 Vce=100V, k=O _ O71 pA > MJEt8O Vea=60V, le=0, Te= 150C . i 0.1 pA : MJE181 Vea=80V, Iz=0, Te=150C 1 O41 pA 1 MJE182 Ves? 100V, k=O, To=150C 0.1 pA Emitter Cutoff Current teBo Var=7V, be=0 : Of pA DC Current Gain Hee Voe=1V, b=100mA 50: 250 . Ves=1V, b= S500mA 30 | VcE=1V, 1c=1.5A 12 ! Collector Emitter Saturation Voltage Vce(sat) Ic=500mA, Ip=50mA : O38 Vv -be=1.5A, la=150mA ' 09 Vv lb=3A,. lg=GOOMA 1 1.7 Vv Base Emitter Saturation Voltage Vee(sat) Io=1.5A, p= 150mA. , 15 Vv . , _ | =A, b=600mA 2.0 Vv Base Emitter On Voltage Vee(on) Vce=1V, b=500mMA . 1.2 Vv Current Gain-Bandwidth Product fy Voe=10V, b= 100mA, f= 10MHz 50 MHz Output Capacitance Ca Vep=10V, le=0, f=0.1MHz - 30 pF 269 ISAMSUNG SEMICONDUCTOR INC MJE180/181/182 : 4 . STATIC CHARACTERISTIC Ic(A}, COLLECTOR CURRENT 1 2 3 4 5 6 7 & a 10 Ved{), COLLECTOR-EMITTER VOLTAGE : BASE-EMITTER SATURATION VOLTAGE SATURATION VOLTAGE 10. ~ V), SAUTAATION VOLTAGE 2 a 2 Voe(ant).Voe(eaty 3 S 9 2 0.02 0.05 Ot 0.2 Os 1 2 4 \-{A), COLLECTOR CURRENT POWER DERATING P,{W), POWER DISSIPATION 25 650 7 100 125 150 175 200 Te(*C), CASE TEMPERATURE LYE DO B esesn4e OOO7L4S 8 i NPN EPITAXIAL SILICON TRANSISTOR : 33709 DC CURRENT GAIN tee, OC CURRENT GAIN 10. 20 50 100 200 500 1000 2000 5000 10000 Ic(mA), COLLECTOR CURRENT COLLECTOA OUTPUT CAPACITANCE CadpF), CAPACITANCE 022 05 1 2 5 10 20 60 too o1 ~ Vesl}, COLLECTOR-BASE VOLTAGE SAFE OPERATING AREA 0. a2 fe(A), COLLECTOR CURRENT 2 o a 0.02 2.0 2 10 20 50 100 Vcet), COLLECTOR-EMITTER VOLTAGE eS samsunc SEMICONDUCTOR - 270 [SAMSUNG SEMICONDUCTOR INC LYE D ff 2464242 coozedG T+ i MJE200 NPN EPITAXIAL SILICON TRANSISTOR . : - COLLECTOR-EMITTER SUSTAINING VOLTAGE __ 33-07 7 LOW COLLECTOR-EMITTER SATURATION TO-126 : VOLTAGE , HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz @ Ic=100mA Complementary to MJE210 ABSOLUTE MAXIMUM RATINGS (T,=25C) a Characteristic Symbol Rating Unit Collector-Base Voltage Veso 40 Vv Collector-Emitter Voltage Vero 25 v Emitter-Base Voltage Veso 8 <s.L Vv Collector Current ic 5 A Collector Dissipation Po 16 WwW : Junction Temperature Tj 150. C 1. Emitter 2. Collector 3 Base Storage Temperature Tstg -65~150 C ELECTRICAL CHARACTERISTICS (T, =25C) , . t t Characteristic Symbol Test Condition Min 1 Max = Unit Collector Emitter Sustaining Voitage | Vceo(sus) _{ lc=10mA, tp=0 25 - Vv Collector Cutoff Current Iepo Vea=40V, Ie=O 100 nA Ven=40V, [e=0, .T,=125C 100 pA Emitter Cutoff Current lego Vae=8V, lc=O0 , 100 nA DC Current Gain . Hee Vee=1V, l-=S00mA 70 . ' Vee=1V, c= 2A 45 | 180} Voe=2V, Ic=5A 10 | Collector-Emitter Saturation Voltage | Vce(sat} Ic=500mA, lg=50mA 0.3. -V : Io=2A, le=200mA o7 lov . lc=5A, lg=1A : 1.8 Vv Base-Emitter Saturation Voitage Vee{sat) Ilc=5A, ta= 1A 2.5 Vv Base-Emitter On Voltage Vae(on) Voe=1V, lb=2A 1.6 Vv Current Gain-Bandwidth Product fr. Vce=10V, Icb=100mA, f=10MHz 65 MHz Output Capacitance Cob - eVcs=10V, le=0, f=0.1MHz 80 pF 271 ce SAMSUNG SEMICONDUCTOR -SAMSUNG SEMICONDUCTCR INC. MJE200 % a POWER DERATING z o EB < a a a & 2 2 5 28 60 75 100 125 180 +75 200 Te("C), CASE TEMPERATURE = 1 COLLECTOA OUTPUT CAPACITANCE MHz 1ee0 Ww - 3 z 3a a 3 3 % 2 50 1 OF O02 O08 7 2 5 10 20 100 Veal), COLLECTOR-BASE VOLTAGE - COLLECTOR-EMITTER SATURATION VOLTAGE BASE-EMITTER SATURATION VOLTAGE Vee(sat}, Vex(satXV), SATURATION VOLTAGE e 0.01 0.02 0.05 Of 02 L(A), COLLECTOR CURRENT 06 1 14E D0 B tious 00076971 i kA), COLLECTOR CURRENT bee, DC CURRENT GAIN NPN EPITAXIAL SILICON TRANSISTOR | : T= 33-07 FORWARD BIAS SAFE OPERATING AREA 20 10 & 2 1 0.5 0.2 -- a O41 a 2 8 10 20 50100 Ves(V), COLLECTOR-EMITTER VOLTAGE DC CURRENT GAIN 100 60 20 10 i . 0010.02 0.05 0.1 02 06 1 2 5 10 i,{A}, COLLECTOR CURRENT G82 sausunc SEMICONDUCTOR 272