Large-signal Power MOSFETs The Sanyo J-MOS series utilizes Sanyos own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and LD Series offer the most suitable devices to meet specific needs, In addition to the below SANYO has a wide variety of package of small-signal power MOSFET series. See the tables on other pages, ate LD series (Low Drive) The LD Series, an ingenious hybrid of the LSI-class fine process and the power process, has higher transfer characteristics and lower on-state resistance. The result is a low voltage drive series which saturates at a YGS bias of 4V. This series is most effective for a power supply controlled by a 5V drive logic IC. The surface mounting SMP and ZP package enables higher density assembly and higher reliability. Application &Li ion battery, notebook PC, AV equipment, personal equipment etc. VDSS 3OV system (28J] type:P channel (-) sign is omitted. ) Case Outlines (uni fam) ANYO:Z 1:Gate, 2: Source 3:Drain e (1) 0 Absolute Maximum Ratings Electrical Characteristics/Ta=25T Type No, Package /Ta=250 Type No. Yoss Voss ly lpp De Veg (off) Rosfon Ros (on iss c= fin ~ max = = a ay tay Lay [8 (vy) | cayio/aax |(2)tp/max | PR 25J466 +20/ 35] 140] 50) 1 ~ 2] 30m/40m 200/30m 400028) 466 29K2432 ZP +20/ 35/140] 50/1 ~ 2 | 25m/735m T5m/ 25m 2000 | 2SK2432 2SK3066 +20; 30] 120) 30}1 ~ 2.5 | 25m/35m 15m/ 22m 1600} 2SK3066 253257 #15]. 10] 40]. 50/1 ~ 2 | 1200/1700 85n/120m | 1000/2SJ257 25J258 #20] 12] 48] 60] 1 ~ 2] 95m/130m 70m,/95m 1300} 253258 2$J259 #20! 20] 80} 70)1 ~ 2] 55m/75m 40m,//55m 2000| 25J259 25400 SMP 20] 35|_ 140] = 70): 1 ~~ =2 | -30m,/40m 250,//35m 4000|25J400 SANYO: SMP=FD 25K1889 415{ 18] 72) Soll ~ 2! 55m/75m 400/550 1000/2SK1889 | 1:Gate, 2:Drain 2SK1890 #20| 22] 88) 60} 1 ~ 24 400//55m 30m/40m 1300] 25K1890 |3:Source 2SK1891 go|#15}__ 35] 140] 70). 1 ~ 2 | 25m/35m 150/250 2000}2SK1891 |. 2 65 ,- 28J251 +15 10. 40] 50/2 ~ 2 | 120m/170m 85n120m | 1000]28)251 S Le 25J252 +20] 12) 48} 60) 1 ~ 21] 95m/130m 70n/95m 1300] 28) 252 O 28J253 10-220 +15] 20{ 80) 70} 1 ~ 2 | 55m 75m 40m /55m 2000|25J253 4 25K1883 415/18] 72] 50/1 ~ 2 | 55m/75m 400/55m 1000/2SK1883 fel 33 25K1884 +20; 22) 88} 60/1 ~ 2 | 40m/55m 300/400 1300} 2SK1884 O 4 2SK1885 +20| 35| 140] 70} 1 ~ = 2 | 25m 35m 15m/25m 2000] 2SK1885_| J AT Gee a 28K2977LS|T0-220F I (LS #20 30] 120) 30) 1 ~ 2.5] 25n/35m 1507220 | ie00l2skeo77 |q_\y Ve St 28] 254 15| 8} 32) 25,1 ~ 2 | 120m/I70n | 85m/120n | 1oo0|2Sj254 | Sets 3 iL 28J255 +20} 10) 40} 25,1 ~ 2 95m/130m 700/95 1300] 28J255 ; 2$J256 10-220ML +15] 18| 72, 30} 1 ~ 2 | 55/750 40m/55mn 2000| 283256 25K1886 +15. 15] 60] 25/1 ~ 2 | 55m/775m 40n/55n 1000/2SK1886 ; 2SK1887 +20; 20/80] 25) 1 ~~ 2 | 40m55m 30m//40m 1300|2SK1887 2SK1888 +15{ 30] 120} 30 1 =~ 2 | 25m 35m 15m /25m 2000]25K1888 _ | SANYO:TO-220FI(LS) VDSS GOV system 1Gate, 2:Drain 25J414 #20] 15] 72) 50 800//110m 60n,/80n 1900] 25]414 | 2.6 - 28J415 ZP 20 8} 40] 40 150m/200m | 110m/150m | 1230) 2583415 25K2433 20] 25] 120] 50 400/55m 300/400 1900] 28K2433 Fi 25266 15 a} 32] ~50 200m/270m | 150m//200n 950} 25)266 H 25J267 +201 10] 40] 60 150m,200m | 110m/150m | 1230) 283267 25J268 +15} 18) =72/ = 70 800/110m 60m/80m 1900} 2SJ268 a 25340 SMP +20| 30| (120/70 40m /55m 300 /40m 3800] 25]340 | FF 2SK1898 +15, 15 60] 50 800/110m 60030m 950] 2SK1898 | 2 2SK1899 +20| 18] 72/ 60 70m 95m 50n/70m 1230] 2SK1899 } 4 2SK1900 +15} 30/ 120) 70 40m 55m 30m 40m 1900] 25K1900 2SK2164 +20| 45] 180{ 70 200 27m 150 20m 3800} 2SK2164 253260 15 8| 32] 50 200m/270m | 150m/7200n 950] 2SJ260 b 28J261 +20; 10) 40] 60 150m200m | 110m/150m | 1230| 28J261 ee} 2S) 262 60] +15] 18] 721 70/1 ~ 2 800,//110m 600,/80n 1900| 2$J262 25J348 T0-220 +20] 30] 120} 70 40n/55m 300/40 3800] 2SJ348 | SANYO:T0-220ML 28J478 +20] 20] 80] 80 50n/90m 350 45m 3000] 25J478 | 1:Gate, 2:Drain 2SK1892 #15] 15| 60 50 800/100 | 60n,/80n | 950] 2sKiag2 | 3*Source 2SK1893 +20] 18] 721 60 700 95m 500 /70n 1230] 2SK1893 - 10.0 2SK1894 +15} 30) 120] 70 40n/55m 30740n | 1900 2skiaea | 2244 ; a F 28J263 15 6| 24) 25 200m,270m | 150m,200m | 950] 25J263 -Ftls Ret | 25J264 20 8! 321 25 150m/200m | 110m/150m | 1230] 25]264 TT | z 2SJ265 +15. 15} 60] 30 80n/110m 60n,/80n 1900] 2S]265 Yk 2$J339 +20} 25] 100) 40 40m/55m 30n/40m 33800] 25J339 28J519 10-220ML +20) 20] 80) 35 45m,/70m 30m/40m 3000} 2SJ519 25K1895 +15] 12] 48) 925 80n/110m 60m//80m 950| 2SK1895 . FE 2SK1896 #20 15| 60; 25 700/95 50a/70m 1230| 2SK1896 iw 2SK1897 +15} 25] 100] 30 40m/55m 30n/40m 1900] 2SK1897 R| g 28K2163 +20] 40] 160} 40 200/270 150/20m 3800) 2SK2163 aed 25)413 TO-3PML #20, 50! 200] 70 200/300 150/200 7600) 25J413 | 4 be Underlined type Nos. are before mass production. JJ t - Take care to prevent device breakage from static electricity because MOSFETs cannot withstand much static 255 253 electricity, These specifications are subject to change without notice. Next page. SANYO Electric Co., Ltd. Semiconductor Business Headquarters, TR Division. MT980602TR Mm 7997076 0019571 9139 98SANYO SANYO Discrete Device Package Outlines(unit: mm) Small-Signal Transistors Large-Signal Transistors ZP, SMP, SMP-FD, TO-220, TO-220C1, TO-220ML, TO-220F1 (LS), TO-220MF, TO-3PB, TO-3PML, TO-3PBL, TO-3JML. Outlines] SSFP, SMCP, MCP, MCP4/6, CP, CP4/5/6, CPH3/5/6, PCP, PCP4/5, name XP5/6, TP, TP-FA, MFP6, TSSOP8, SOP8, SPA, NP, MP, NMP, FLP, TO-126, TO~126ML, TO-126LP ate SANYO Transistor Package Name List. Surface Mount Types Lead Types ML:No insulating needed. SSFP Super Small Flat Package NMP SMCP Super Mini Chip Pack. FLP re Mold Large Package MCP Mini Chip Pack, 126LP Large-Power MCP4/6 |Mini Chip Pack. (FH type) 126ML Micaless cP Chip Pac 10-220, 220ML a Wicaless type CP5/6 i: Pack. (FC type) 10-2200] Compact Isolation CPH3/5/6: hi ip Pack hi high-power 1Q-220F1 (LS) Fail Isolation (leade short type) He Power Chip Pack TO-220MF ini Fin Short fin type. PCP4/5 |Power Chip Pack. (FP type TO-3PB, 3PML |Bushless ,ML:Micaless XP X type TO-3PuL. Micaless TSSOPS (FTS, type TO-3PBL Bushless Large SOPS (FW, FSS type TO-3JML Jumbo Micaless TP-FA_ {Tiny Package - - SMP- For large signal PB, BL:no insulating needed. zP For large signal :How to name CPH3/6 devices. Package name followed by 1,2,3 or 4 and then tow-digit consecutive Nos. Figures following the package names mean: 1:PNP Tr, 2:NPN Tr, 3:P-ch MOSFET, Notes Nomenclature of house NOs. The the FSS, FTD, FW, "tes, ete wh. ge seu CAM DMPON POS gaSB05D555 AAO. Manoel tee ee ee first severa Nos. of FTS, FC, FP FH, fl series mean: Packages for oP gx type devices, /5, XP5/6, SOP8, TSSOP8) : 2 Sb PB ra kage Double c r TSSOP8 on PS oe : CP5/6 package : PCP4/5 package is 48 ppackaze : bral He freq, type Single Type Nos. of 1XX or 1XXX are p-channel types. Type Nos. of 2XX or 2XxXX are N-channel types. ate Surface Mount Type Outlines(JEDEC and E]JAJ name are in parentheses. ) Top View Pin Nos. of top view are CAD register Nos. Bottom side : Heat sink side, XP package is excluded, 4:N=-ch MOSFET. SANYO: SSFP Device weight:0. 002g SANYO: SMCP(SC=75A) Device weight:0. 003g SANYO: MCP(SC=70), DME SE A), DCP SANYO: CP(SC-59, TO-236) Device weight:0. 013g = 3 at qo oa ad ae SH SMCP (2-5 sh) Vinee OS SANYO: CP4, CP5, CP6(SC-61, TK SC-74, SOT143) Device weight:0. 013g, 0. 014g, 0. 015 1. 3 ox = tS 4 a EROS gl SIE tte ePlsf HL JE 4 30] sf 01 3h) t a dl wall 020.1 | | eh. 0~0.1 del 0-0. a aed i + 23 ott) WLI-Lo) 7 : ' et oI Pe ao ps cp aged CPA 29 cP5 28.1 CPG f =| La oealct.. id fs ol tls 08 SANYO: CPHE SANYO: PCP, PCP4/5(SC-62, SOT89) Bottom View je | ae 0~-0.1 SANYO: CPHS, CPHS Device weight:0. 013g, 0. 015 29 43 AA 3 eae 5 0~0.1 iat : u - feep SANYO:XP5 Bottom View Device weight:0. 015g Device weight:0, 062g Device weight:0, 058g, 0. 052g oe 4.5 15 peel A py uM , AAAT 2 a jaf Hous ast 2 a oe "IF a. | ' , s 2 DS | f rink r Tae TR oS TPH . asl, | , CPHG ot 35 . 0.2.4 sorta PCP PCP4 aly PCPS (0 i) (loti oe SANYO:XP6 Bottom View SANYO: MFP6 SANYO: SOPS SANYO: TSSOP8 Device weight:0. 062g Device weight:0. 089g Device weight:0. 093 Device weight:0. 04g sy 7A 4A iT ] q 2! | 3 @ pauy Oo oO HH . mG 5.0 e ier NFP6 pst ==" 06S 1.90 rh on next page ma 7997076 OOLUb2) 294 SANYO Electric Co., Ltd. Semiconductor Business Headquarters. TR Division 108 MT980618TRSANYO SANYO Discrete Device Package Outlines(unit: mm) ale Surface Mount Type Outlines(JEDEC and ElAJ name are in parentheses. ) Top View Pin Nos. of top view are CAD register Nos. Bottom side : Heat sink side. SANYO: TP, TP-FA(SC-64, SC-63, TO-251) SANYO: SMP, SMP-FD(forming type) (SC-83) SANYO: 2P Device weight:0. 315g, 0. 282g Device weight:1. 4g Device weight:0. 62g 65 23 65 3 29 jo 10:2 pio] | Piles 4 09 8.8 1.0 By i om oS. O fe Aa 3 = an a 3 i r Oo Cs aE: " s cs 2 ss Ton be BEY He waa 4 Neher | com UES yu oa 4 att as f alc Lead Type Outlines(JEDEC and EIAJ name are in parentheses. ) * Top Vi ew (Pin No.: CAD register Nos. SANYO: SPA(TO-18, T0-29) _ SANYO!NP(SC-43A, TO-92, SOT-54) _SANYO:MP(SC-51, 10-226) _SANYO:NMP(SC=71) SANYO: FLP Device weight:0.098g Device weight:0. 269 Device weight:0.578g Device weight:0.21g, AN use:0.275 Device weight:1. lg po be pe 5.0 2.3 P| soa 15] 5 r 105__ i : a ee a I 4 | Teas \ El : & il lime ~~} ou g re fos Ae | | an ee : i : 0.45 1.343 Hee: LS Pi SANYO: T0-126(T0-126, 10-225, SOT-a2), TO-126LP, TO-120ML(S0T-82) SANYO: TO-220AB, AB(SC=45, 46, TO-220AA) Device weight : 0.6752, 0.7g, 0.97g Device weight:1. 9g FE 15.1 *+- 14.0 > bo 2.7 4. eal Tt a , ~Nw& mm. 25S 255 ai E hs LET Fe hot -+$= T0-126LP TO-126ML af SANYO: 10-2200] Sh SOI Te 186) SANYO: T0-220F1 (LS) (SC=67, SOT=189) SANYO: TO-220MF Device weight:1. 75g Device weight ingen) Device weight :T. 186. ISDHATT220) Device weight:1. 4g 6 8 ba 160m otek 3st, Ae ee | 09... 8.8 1.0 fae Fpl cee; [FL 8 ! 2 > 2 te ct Oo est i | a 218 le 18.1 Lozs. _ Po 2 Ad 718 7.241 AT { O tos |t CT j i |,__15 (24) oh tor f = " jot a fa 6.8 SANYO: T0-3PB(SC-65, TO-218) SANYO: TO-3PML (1 SOWATT218) SANYO: TO-3PBL(10-247) SANYO: TO-3JML Device weight:5. 8g Device weight:5. 3g Device weight:9. 2g Device weight:9, 2g feo eT 5.0 pet | fe b i : atl be Lantos 1 o. SANYO Electric Co., Ltd. Semiconductor Business Headquarters. TR Division MTS80608TR 7997076 0019622 120 109