2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
FSR1110D, FSR1110R UNITS
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 100 V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 100 V
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID1.0 A
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D0.6 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 3.0 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT1.25 W
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT0.5 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.01 W/oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . IAS 3.0 A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS1.0 A
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 3.0 A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG -55 to 150 oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max) 300 oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 1mA, VGS = 0V 100 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS,
ID = 1mA TC = -55oC - - 5.0 V
TC = 25oC 1.5 - 4.0 V
TC = 125oC 0.5 - - V
Zero Gate Voltage Drain Current IDSS VDS = 80V,
VGS = 0V TC = 25oC--25µA
TC = 125oC - - 250 µA
Gate to Source Leakage Current IGSS VGS = ±20V TC = 25oC - - 100 nA
TC = 125oC - - 200 nA
Drain to Source On-State Voltage VDS(ON) VGS = 12V, ID = 1.0A - - 0.71 V
Drain to Source On Resistance rDS(ON)12 ID = 0.6A,
VGS = 12V TC = 25oC - 0.570 0.680 Ω
TC = 125oC - - 1.09 Ω
Turn-On Delay Time td(ON) VDD = 50V, ID = 1.0A,
RL = 50Ω, VGS = 12V,
RGS = 7.5Ω
- - 15 ns
Rise Time tr- - 15 ns
Turn-Off Delay Time td(OFF) - - 25 ns
Fall Time tf- - 20 ns
Total Gate Charge Qg(TOT) VGS = 0V to 20V VDD = 50V,
ID = 1.0A - - 14 nC
Gate Charge at 12V Qg(12) VGS = 0V to 12V - 8.7 9.7 nC
Threshold Gate Charge Qg(TH) VGS = 0V to 2V - - 0.54 nC
Gate Charge Source Qgs - 1.4 1.7 nC
Gate Charge Drain Qgd - 4.2 4.7 nC
Plateau Voltage V(PLATEAU) ID = 1.0A, VDS = 15V - 6 - V
Input Capacitance CISS VDS = 25V, VGS = 0V,
f = 1MHz - 155 - pF
Output Capacitance COSS -70-pF
Reverse Transfer Capacitance CRSS -20-pF
Thermal Resistance Junction to Ambient RθJA - - 100 oC/W
FSR1110D, FSR1110R