© Semiconductor Components Industries, LLC, 2014
February, 2014 − Rev. 1
1Publication Order Number:
NTMFS4C35N/D
NTMFS4C35N
Power MOSFET
30 V, 80 A, Single N−Channel, SO−8 FL
Features
•Low RDS(on) to Minimize Conduction Losses
•Low Capacitance to Minimize Driver Losses
•Optimized Gate Charge to Minimize Switching Losses
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•CPU Power Delivery
•DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 30 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain
Current RqJA
(Note 1)
Steady
State
TA = 25°CID22.5 A
TA = 80°C 16.8
Power Dissipation
RqJA (Note 1)
TA = 25°C PD2.59 W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°CID36 A
TA = 80°C 27
Power Dissipation
RqJA ≤ 10 s (Note 1)
TA = 25°C PD6.65 W
Continuous Drain
Current RqJA
(Note 2)
TA = 25°CID12.4 A
TA = 80°C 9.3
Power Dissipation
RqJA (Note 2)
TA = 25°C PD0.78 W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°CID80 A
TC =80°C 60
Power Dissipation
RqJC (Note 1)
TC = 25°C PD33 W
Pulsed Drain
Current
TA = 25°C, tp = 10 msIDM 180 A
Current Limited by Package TA = 25°C IDmax 80 A
Operating Junction and Storage
Temperature
TJ,
TSTG
−55 to
+150
°C
Source Current (Body Diode) IS30 A
Drain to Source dV/dt dV/dt7.0 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VGS = 10 V, IL = 48 Apk,
L = 0.1 mH, RGS = 25 W) (Note 3)
EAS 115 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 29 A, EAS = 42 mJ.
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
http://onsemi.com
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty
4C35N
AYWZZ
1
V(BR)DSS RDS(ON) MAX ID MAX
30 V
3.2 mW @ 10 V
80 A
4.0 mW @ 4.5 V
N−CHANNEL MOSFET
Device Package Shipping†
ORDERING INFORMATION
NTMFS4C35NT1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4C35NT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
S
S
S
G
D
D
D
D
G (4)
S (1,2,3)
D (5−8)
NTMFS4C35N
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2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain) RqJC 3.8
°C/W
Junction−to−Ambient – Steady State (Note 4) RqJA 48.3
Junction−to−Ambient – Steady State (Note 5) RqJA 159.3
Junction−to−Ambient – (t ≤ 10 s) (Note 4) RqJA 18.8
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA30 V
Drain−to−Source Breakdown Voltage
(transient)
V(BR)DSSt VGS = 0 V, ID(aval) = 13.2 A,
Tcase = 25°C, ttransient = 100 ns
34 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
12 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 24 V
TJ = 25°C 1.0
mA
TJ = 125°C 10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.3 2.2 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ5.0 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 30 A 2.56 3.2
mW
VGS = 4.5 V ID = 30 A 3.4 4.0
Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 50 S
Gate Resistance RGTA = 25°C 1.0 W
CHARGES AND CAPACITANCES
Input Capacitance CISS
VGS = 0 V, f = 1 MHz, VDS = 15 V
2300
pF
Output Capacitance COSS 1097
Reverse Transfer Capacitance CRSS 46
Capacitance Ratio CRSS/CISS VGS = 0 V, VDS = 15 V, f = 1 MHz 0.02
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 15 V; ID = 30 A
15
nC
Threshold Gate Charge QG(TH) 3.3
Gate−to−Source Charge QGS 6.5
Gate−to−Drain Charge QGD 5.5
Gate Plateau Voltage VGP 3.1 V
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 32.5 nC
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time td(ON)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
12.6
ns
Rise Time tr33
Turn−Off Delay Time td(OFF) 21.4
Fall Time tf6.7
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
NTMFS4C35N
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionSymbol
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time td(ON)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
8.7
ns
Rise Time tr26
Turn−Off Delay Time td(OFF) 28
Fall Time tf4.4
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 10 A
TJ = 25°C 0.8 1.1
V
TJ = 125°C 0.62
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
41
ns
Charge Time ta21
Discharge Time tb20
Reverse Recovery Charge QRR 30 nC
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
3.02.52.01.51.00.50
0
20
40
60
80
100
120
140
4.03.53.02.52.01.51.0
0
150
Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
109876543
2.0
2.5
3.0
3.5
4.0
5.0
5.5
6.0
70605040302010
2.0
2.2
2.6
2.8
3.2
3.4
3.6
4.0
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
150
10
30
50
70
90
110
130
20
40
60
80
100
120
140
10
30
50
70
90
110
130
VDS = 3 V
3.4 V
TJ = 125°C
TJ = −55°C
TJ = 25°C
TJ = 25°C
3.2 V
3.0 V
2.8 V
2.6 V
2.4 V
VGS = 3.6 V
3.8 V − 10 V
4.5
TJ = 25°C
ID = 30 A
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
2.4
3.0
3.8 TJ = 25°C
VGS = 4.5 V
VGS = 10 V
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4
TYPICAL CHARACTERISTICS
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.6
0.7
0.9
1.0
1.2
1.3
1.5
1.7
30252015105
10
100
1000
10,000
100,000
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
302520151050
0
400
800
1200
1600
2000
2400
2800
3224201612840
0
2
4
6
8
10
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100101
1
10
100
1000
0.90.80.70.60.50.4
0
2
6
8
10
14
18
20
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
IDSS, LEAKAGE (nA)
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
IS, SOURCE CURRENT (A)
VGS = 10 V
ID = 30 A
150
0.8
1.1
1.4
1.6 VGS = 0 V
TJ = 125°C
TJ = 150°C
TJ = 85°C
TJ = 25°C
VGS = 0 V
Ciss
Coss
Crss
28
TJ = 25°C
VGS = 10 V
VDD = 15 V
ID = 30 A
QT
Qgs Qgd
VDD = 15 V
ID = 15 A
VGS = 10 V td(off)
td(on)
tf
tr
4
12
16
VGS = 0 V
TJ = 125°C
TJ = 25°C
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5
TYPICAL CHARACTERISTICS
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Stating Junction Temperature
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C)
1001010.10.01
0.01
0.1
1
10
100
1000
150125100755025
0
5
15
25
30
40
45
Figure 13. GFS vs. IDFigure 14. Avalanche Characteristics
ID (A) PULSE WIDTH (sec)
1501251007550250
0
20
40
60
80
100
120
140
1.E−08
1
10
100
Figure 15. Thermal Response
PULSE TIME (sec)
100.10.010.0010.00010.00001 10.000001
0.01
0.1
1
10
100
ID, DRAIN CURRENT (A)
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
GFS (S)
ID, DRAIN CURRENT (A)
R(t) (°C/W)
100 1000
Single Pulse
50% Duty Cycle
20%
10%
5%
2%
1%
10
20
35 ID = 29 A
VDS = 1.5 V
1.E−07 1.E−06 1.E−05 1.E−04 1.E−03
Single Pulse Response
0 V < VGS < 10 V
TA = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
10 ms
100 ms
1 ms
10 ms
dc
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6
PACKAGE DIMENSIONS
M3.00 3.40
q0 −−−
_
3.80
12
_
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
2
2
B
A
0.20 C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A0.90 1.00
A1 0.00 −−−
b0.33 0.41
c0.23 0.28
D5.15 BSC
D1 4.70 4.90
D2 3.80 4.00
E6.15 BSC
E1 5.70 5.90
E2 3.45 3.65
e1.27 BSC
G0.51 0.61
K1.20 1.35
L0.51 0.61
L1 0.05 0.17
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05 cL
DETAIL A
A1
e
3 X
c
4 X
C
SEATING
PLANE
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
0.20
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
M
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
0.475
4.530
1.530
4.560
0.495
3.200
1.330
0.965
2X
2X
3X 4X
4X
PIN 5
(EXPOSED PAD)
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NTMFS4C35N/D
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