D A T E N A M E
APPROVED
DWG.NO.
SPECIFICATION
Device Name :
Type Name :
Spec. No. :
H 0 4 - 0 0 4 - 0 7 b
7MBR15UF060
MS6M00814
1/16
Power Integrated Module
Fuji Electric Device Technology Co.,Ltd.
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any w ay wh atsoever fo r the use of any t h ird part y n o r used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
MS6M00814
DRAWN
CHECKED
CHECKED
K. Komatsu
O . Ikawa
K. Yamada
Y . S e k i
D e c . - 1 0 - ' 0 4
D e c . - 1 0 - ' 0 4
保守廃止予定機種
Not recommend for new design.
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DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00814
2/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
D a t e C l a s s i -
f i c a t i o n I n d . C o n t e n t Applied
date D r a w n C h e c k e d C h e c k e d A p p r o ve d
Enactment I s s u e d
date
Revised Records
H 0 4 - 0 0 4 - 0 6 b
D e c . - 1 0 - ' 0 4
O . Ikawa
K. Yamada
Y . S e k i
保守廃止予定機種
Not recommend for new design.
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DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00814
3/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
7MBR15UF060 Specification
2. Equivalent circuit
1. Outline Drawing ( Unit : mm )
Module only designed for mounting on PCB with 1.7±
0.3mm thickness
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Not recommend for new design.
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DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00814
4/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
3. Pin positions with tolerance ( Unit : mm )
4. Drilling layout for PCB
P l e a s e refer to m o u n t i n g instructions ( Techni cal R e p . No. :MT5F14628a) w h e n you mount this p r o d u c t .
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Not recommend for new design.
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DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00814
5/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
5 . Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified)
I t e m s Symbols C o n d i t i o n s Maximum
R a t i n g s U n i t s
C o l l e c t o r - E m i t t e r vo l t a g e VCES 600 V
Gat e-Emi t t er volt age VG E S ±20 V
I c C o n t i n u o u s T c = 6 0 1 5
T c = 2 5 oC 1 8
C o l l e c t o r c u r r e n t I c p 1 m s T c = 6 0 3 0
T c = 2 5 oC 3 6
- I c C o n t i n u o u s T c = 6 0 1 5 A
C o l l e c t o r P o w e r D i s s i p a t i o n Pc 1 device 6 3 W
C o l l e c t o r - E m i t t e r vo l t a g e VCES 600 V
Gat e-Emi t t er volt age VG E S ±20 V
I c C o n t i n u o u s T c = 8 0 1 0
T c = 2 5 oC 1 4
C o l l e c t o r c u r r e n t I c p 1 m s T c = 8 0 2 0
T c = 2 5 oC 2 8
C o l l e c t o r P o w e r D i s s i p a t i o n Pc 1 device 5 6 W
Average Output Current I o 5 0 Hz / 6 0 H z
sine wave 2 0 A
Surge Current (Non-Repetitive) I FS M T j = 1 5 0 oC , 1 0 m s 210 A
I 2t (Non-Repet it ive) I 2t h a l f s i n e w a ve 2 2 1 A2s
J u n c t i o n t e m p e r a t u r e T j 150 oC
Storage temperature T s t g - 4 0 ~ + 1 2 5 oC
I s o l a t i o n b e t w e e n t e r m i n a l a n d b a s e p l a t e (*1) Viso AC : 1min. 2 5 0 0 V
v o l t a g e b e t w e e n t h e r m i s t o r a n d o t h e r s (*2) 2 5 0 0 V
Mounting Screw Torque M4 1 . 3 1 . 7 N . m
(* 1) Al l t erm i na l s s h oul d be c onnec ted t oget her when is ol at i on t es t will be done.
(* 2) Termi nal T1 and T2 s houl d be con nec t ed t oget her. A nd anot her t erminal s
should be connected together and shorted to baseplate.
A
A
A
A
InverterConverter Brake
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Not recommend for new design.
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DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00814
6/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
6 . Electrical characteristics ( at Tj= 25
oC unless otherwise specified) C h a r a c t e r i s t i c s
I t e m s Symbols Condi t i o ns min. typ. Max. Units
Z e r o g a t e v o l t a g e
C o l l e c t o r c u r r e n t I CES V
G E = 0 V, VCE
=
6 0 0 V - - 1 . 0 m A
Gate-Emitter leakage current I G E S V
CE = 0 V, VGE
=
±20 V - - 200 n A
Gate-Emitter
threshold voltage VG E ( t h ) V
CE = 20 V, Ic = 8 mA 4 . 5 6.0 7. 5 V
V
CE(sat) T j = 2 5 - 2.10 2 . 6 0
C o l l e c t o r - E m i t t e r (Terminal) V
G E = 15 V Tj=125- 2.50 3 . 0 0
saturation voltage V
CE(sat) I c = 15 A Tj=25- 2.00 2 . 5 0
(Chip) T j = 1 2 5 - 2.40 2 . 9 0
I n p u t c a p a c i t a n c e C i e s V
G E = 0 V, VCE
=
10 V - 9 0 0 -
f = 1 MHz
T u r n - o n t i m e ton Vcc= 300 V - 0.43 1 . 2 0
tr I c = 15 A - 0.18 0 . 6 0
tr(i) V
G E = ±15 V - 0.03 - s
T u r n - o f f t i m e toff RG = 270 - 0.40 1 . 0 0
tf - 0.05 0 . 3 5
Forward on voltage VF T j = 2 5 - 1.85 2 . 5 0
(Terminal) T j = 1 2 5 - 1.95 2 . 6 0
VF T j = 2 5 - 1.75 2 . 4 0
(Chip) T j = 1 2 5 - 1.85 2 . 5 0
R e v e r s e r e c o v e r y t i m e trr I F = 15 A - - 300 ns
Z e r o g a t e v o l t a g e
C o l l e c t o r c u r r e n t I CES V
G E = 0 V, VCE
=
6 0 0 V - - 1 . 0 m A
Gate-Emitter leakage current I G E S V
CE = 0 V, VGE
=
±20 V - - 200 n A
Gate-Emitter
threshold voltage VG E ( t h ) V
CE = 20 V, Ic = 4 mA 4 . 5 6.0 7. 5 V
C o l l e c t o r - E m i t t e r V
CE(sat) T j = 2 5 - 2.45 3 . 0 0
(Terminal) V
G E = 15 V Tj=125- 2.95 3 . 4 5
V
CE(sat) I c = 10 A Tj=25- 2.40 2 . 9 5
saturation voltage (Chip) T j = 1 2 5 - 2.90 3 . 4 0
I n p u t c a p a c i t a n c e C i e s V
G E = 0 V, VCE
=
10 V - 6 0 0 -
f = 1 MHz
T u r n - o n t i m e ton Vcc= 300 V - 0.60 1 . 2 0
tr I c = 10 A - 0.30 0 . 6 0 s
T u r n - o f f t i m e toff V
G E = ±15 V - 0.45 1 . 0 0
tf R G = 510 - 0.05 0 . 3 5
R e v e r s e r e c o v e r y t i m e trr I F = 10 A - - 350 ns
R e v e r s e c u r r e n t I RRM V
R = 600 V - - 1 . 0 0 m A
Forward on voltage V
F M chip - 1.1 -
terminal - 1.2 1 . 5
R e v e r s e c u r r e n t I RRM V
R = 800 V - - 1 . 0 m A
R e s i s t a n c e R T = 25oC 4 7 5 0 5 00 0 5 25 0
T =100oC - 4 9 5 -
B value B T = 25/50oC 3 3 0 5 3 37 5 3450 K
p F
V
Ω
I F = 15A
I F = 2 0 A
V
p F
V
V
Inverter
ConverterThermistor Brake
保守廃止予定機種
Not recommend for new design.
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DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00814
7/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
U. K.
□□□□□
7MBR15UF060
Lot.N o .
15A 600V
SerialN o .
8. Indication on module
1 1 . D e f i n i t i o n s o f s w i t c h i n g t i m e
L
Vcc
Ic
V
CE
R
G
V
GE
V
GE
VCE
Ic
0V
0A
0V
10%
90%
10% 10%
90%
90%
0V
Ic
VCE
on
t
r
t
r(i)
t
off
t
f
t
rr
I
rr
t
9 . A p p l i c a b l e c a t e g o r y
T h i s s p e c i f i c a t i o n i s a p p l i e d t o P o w e r I n t e g r a t e d M o d u l e n a m e d 7 M B R 1 5 U F 0 6 0 .
1 0 . S t o r a g e a n d t r a n s p o r t a t i o n n o t e s
T h e m o d u l e s h o u l d b e s t o r e d a t a s t a n d a r d t e m p e r a t u r e o f 5 t o 3 5 oC and
h um i d i t y o f 4 5 t o 75 % .
Store modules in a place with few temperature changes in order to avoid
condensation on the module surface.
Avoid exposure to corrosive gases and dust.
Avoid excessive external force on the module.
Store modules with unprocessed terminals.
D o n o t d r o p o r o t h e r w i s e s h o c k t h e m o d u l e s w h e n t r a n s p o r t i n g .
12. Packing and Labeling
D i s p l a y o n t h e p a c k i n g b o x
Lo go of pr o du c t i o n
T y p e n a m e
Lo t . N o .
Products quantitiy in a packing box
7. Thermal resistance characteristics C h a r a c t e r i s t i c s
I t e m s Symbols C o n d i t i o n s min. typ. Max . Units
I n v e r t e r I G B T - - 1.99
T h e r m a l r e s i s t a n c e I n v e r t e r F W D - - 2.04
( 1 d e vi c e ) R th(j-c) Brake IGBT - - 2.25 oC / W
Brake diode - - 2.04
C o n v e r t e r D i o d e - - 1.56
Co n t a c t Th e rm a l re s i s t a n c e R th(c-f) w i t h T h e r m a l C o m p o u n d (*) - 0.50 - oC / W
* This is the value which is defined mounting on the additional cooling fin with thermal compound.
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Not recommend for new design.
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DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00814
8/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
Rel i abi lity Test Items
Test
cate-
go r ie s Test items Test methods and conditions
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
N u m b e r
of sample
A c c e p t -
anc e
num b e r
1 Terminal Strength Pull force : 10N T e s t M e t h o d 4 0 1 5 ( 0 : 1 )
(Pull test) Test time : 10±1 sec. Method
2 Mounting Strength Screw torque : 1.3 ~ 1.7 N
m (M4) T e s t M e t h o d 4 0 2 5 ( 0 : 1 )
Test time : 11 sec. method
3 Vibration Range of frequency : 0.1 ~ 500Hz T e s t M e t h o d 4 0 3 5 ( 0 : 1 )
Sweeping time : 15 min. Reference 1
A c c e l e r a t i o n :
100m/s
2 Condition code B
Sweeping direction : Each X,Y,Z axis
Test time : 3 hr. (1hr./direction)
4 Shock M a x i m u m a c c e l e r a t i o n :
9800m/s
2 T e s t M e t h o d 4 0 4 5 ( 0 : 1 )
Pulse width : 0.5msec. Condition c ode D
Direction : Each X,Y,Z axis
Test time : 3 times/direction
1 High Temperature Storage temp. : 125±5 T e s t M e t h o d 2 0 1 5 ( 0 : 1 )
Storage Test duration : 1000hr.
2 Low Temperature Storage temp. : -45 T e s t M e t h o d 2 0 2 5 ( 0 : 1 )
Storage Test duration : 1000hr.
3 Temperature Storage temp. : 82 T e s t M e t h o d 1 0 3 5 ( 0 : 1 )
H u m i d i t y Relative humidity : 85±5% T e s t c o d e C
Storage Test duration : 1000hr.
4 Temperature T e s t M e t h o d 1 0 5 5 ( 0 : 1 )
Cycle Test temp. : Lo w t em p. -4 0±5
H i g h t e m p . 1 2 5 ±5
RT 5 ~ 35
Dwell time : High ~ RT ~ Low ~ RT
1hr. 0.5hr. 1hr. 0.5hr.
N u m b e r o f c y c l e s : 100 cycles
5 Thermal Shock +0 T e s t M e t h o d 3 0 7 5 ( 0 : 1 )
Test temp. : H i g h t e m p . 1 0 0
-5
method
+ 5 Condition c ode A
Low temp. 0
-0
U s e d l i q u i d : W a t e r w i t h i c e a n d b o i l i n g w a t e r
Dipping time : 5 min. par each temp.
Transfer time : 10 sec.
N u m b e r o f c y c l e s : 10 cycles
Mechanical TestsEnvironment Tests
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Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00814
9/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
Failure Criteria
Item Characteristic Symbol Failure criteria Unit Note
Lower limit Upper limit
Electrical Leakage current ICES - USL×2 mA
characteristic ±IGES - USL×2 A
Gate threshold voltage VGE(th) LS0.8 US1.2 mA
Saturation voltage VCE(sat) - USL×1.2 V
Forward voltage VF - US1.2 V
Thermal IGBT VGE - USL×1.2 mV
resistance or VCE
FWD VF - US1.2 mV
Isolation voltage Viso Broken insulation -
Visual Visual inspection
inspection Peeling - The visual sample -
Plating
and the others LSL : Lower specified limit.
USL : Upper specified limit.
Note : EEEaaaccchhh pppaaarrraaammmeeettteeerrr mmmeeeaaasssuuurrreeemmmeeennnttt rrreeeaaaddd---ooouuutttsss ssshhhaaallllll bbbeee mmmaaadddeee aaafffttteeerrr ssstttaaabbbiiillliiizzziiinnnggg ttthhheee cccooommmpppooonnneeennntttsss
aaattt rrroooooommm aaammmbbbiiieeennnttt fffooorrr 222 hhhooouuurrrsss mmmiiinnniiimmmuuummm,,, 222444 hhhooouuurrrsss mmmaaaxxxiiimmmuuummm aaafffttteeerrr rrreeemmmooovvvaaalll fffrrrooommm ttthhheee ttteeessstttsss...
AAAnnnddd iiinnn cccaaassseee ooofff ttthhheee wwweeettttttiiinnnggg ttteeessstttsss,,, fffooorrr eeexxxaaammmpppllleee,,, mmmoooiiissstttuuurrreee rrreeesssiiissstttaaannnccceee ttteeessstttsss,,, eeeaaaccchhh cccooommmpppooonnneeennnttt
ssshhhaaallllll bbbeee mmmaaadddeee wwwiiipppeee ooorrr dddrrryyy cccooommmpppllleeettteeelllyyy bbbeeefffooorrreee ttthhheee mmmeeeaaasssuuurrreeemmmeeennnttt...
Reliability Test Items
Test
cate-
g o r i e s Test items Test methods and conditions
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
N u m b e r
of sample
A c c e p t -
an c e
n u m b e r
1 High temperature T e s t M e t h o d 1 0 1 5 ( 0 : 1 )
Reverse Bias Test temp. : Ta = 125±5
(Tj
15 0 )
Bias Voltage : VC = 0.8×VCES
Bias Meth od : Applied DC voltage to C-E
V G E = 0 V
Test duration : 1000hr.
2 High temperature T e s t M e t h o d 1 0 1 5 ( 0 : 1 )
Bias (for gate) Test temp. : Ta = 125±5
(Tj
15 0 )
Bias Voltage : VC = VGE = +20V or -20V
Bias Meth od : Applied DC voltage to G-E
V C E = 0 V
Test duration : 1000hr.
3 Intermitted ON time : 2 sec. T e s t M e t h o d 1 0 6 5 P<1%
Operating Life OFF time : 18 sec.
(Power cycle) Test temp. : Tj=100±5 deg
( for IGBT ) Tj
150 , Ta=25±5
N u m b e r o f c y c l e s : 8500 cycles
Endurance Tests
保守廃止予定機種
Not recommend for new design.
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DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00814
10/16
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
R e l ia b i l i t y T e s t R e s u l t s
T e s t
cate-
g o r i e s Test items
Reference
n o r m s
EIAJ ED-4701
(Aug.-2001 edition)
N u m b e r
of tes t
sample
N u m b e r
o f f a i l u r e
sample
1 Terminal Strength T e s t M e t h o d 4 0 1 5 0
(Pull test) Method
2 Mounting Strength T e s t M e t h o d 4 0 2 5 0
method
3 Vibration T e s t M e t h o d 4 0 3 5 0
C o n d i t i o n c o d e B
4 Shock T e s t M e t h o d 4 0 4 5 0
C o n d i t i o n c o d e B
1 High Temperature Storage T e s t M e t h o d 2 0 1 5 0
2 Low Temperature Storage T e s t M e t h o d 2 0 2 5 0
3 Temperature Humidity T e s t M e t h o d 1 0 3 5 0
Storage T e s t c o d e C
4 Temperature Cycle T e s t M e t h o d 1 0 5 5 0
5 Thermal Shock T e s t M e t h o d 3 0 7 5 0
met hod
C o n d i t i o n c o d e A
1 High temperature Reverse Bias T e s t M e t h o d 1 0 1 5 0
2 High temperature Bias T e s t M e t h o d 1 0 1 5 0
( for gate )
3 Intermitted Operating Life T e s t M e t h o d 1 0 6 5 0
(Power cycling)
( for IGBT )
Mechanical Tests
EnvironmentTests
Endurance Tests
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00814
11/16
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
0
10
20
30
40
012345
[ Inverter ]
Coll e ctor c ur r en t vs. C oll ec t or-E m itter volt ag e
T j = 2 5 oC (typ.) / chip
C o l le c t o r c u r r e n t : I c [ A ]
Collector - Emitter voltage : VCE [ V ]
9 V
1 1 V
1 3 V1 5 VV G E = 2 0 V
0
10
20
30
40
0 1 2 3 4 5
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125oC (typ.) / chip
C o l le c t o r c u r r e n t : I c [ A ]
Collector - Emitter voltage : VCE [ V ]
9V
1 1 V
1 3 V
15V
VGE=20V
0
10
20
30
40
012345
[ Inverter ]
Coll e ctor c ur r en t vs. C oll ec t or-E m itter volt ag e
VG E =1 5V ( t y p. ) / ch i p
C o l le c t or c u rr e n t : I c [ A ]
Collector - Emitter voltage : VCE [ V ]
T j = 2 5 oCT j = 1 2 5 o C
0
2
4
6
8
10
810 12 1 4 16 1 8 2 0 22
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
T j = 2 5 oC (typ.) / chip
Collector - Emitter voltage : VCE [ V ]
Gate - Emitte r vol tage : VGE [ V ]
7.5A
1 5 A
Ic=30A
1 0 0
1000
0 5 10 1 5 20 2 5 3 0 35
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
V G E = 0 V , f = 1 M H z , T j = 2 5 oC
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
Cies
Cres
Coes
0
100
200
300
400
500
0
5
10
15
20
25
010 20 3 0 40 50 60 70
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=3 00V, Ic= 8A, Tj= 25 oC
Collector - Emitter voltage : VCE [ V ]
Gate-Emittervoltage : VGE [V]
Gat e c h a r g e : Q g [ n C ]
保守廃止予定機種
Not recommend for new design.
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