
DWG.NO.
MS6M00814
6/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
6 . Electrical characteristics ( at Tj= 25
oC unless otherwise specified) C h a r a c t e r i s t i c s
I t e m s Symbols Condi t i o ns min. typ. Max. Units
Z e r o g a t e v o l t a g e
C o l l e c t o r c u r r e n t I CES V
G E = 0 V, VCE
6 0 0 V - - 1 . 0 m A
Gate-Emitter leakage current I G E S V
CE = 0 V, VGE
±20 V - - 200 n A
Gate-Emitter
threshold voltage VG E ( t h ) V
CE = 20 V, Ic = 8 mA 4 . 5 6.0 7. 5 V
V
CE(sat) T j = 2 5 ℃- 2.10 2 . 6 0
C o l l e c t o r - E m i t t e r (Terminal) V
G E = 15 V Tj=125℃- 2.50 3 . 0 0
saturation voltage V
CE(sat) I c = 15 A Tj=25℃- 2.00 2 . 5 0
(Chip) T j = 1 2 5 ℃- 2.40 2 . 9 0
I n p u t c a p a c i t a n c e C i e s V
G E = 0 V, VCE
10 V - 9 0 0 -
f = 1 MHz
T u r n - o n t i m e ton Vcc= 300 V - 0.43 1 . 2 0
tr I c = 15 A - 0.18 0 . 6 0
tr(i) V
G E = ±15 V - 0.03 - s
T u r n - o f f t i m e toff RG = 270 - 0.40 1 . 0 0
tf - 0.05 0 . 3 5
Forward on voltage VF T j = 2 5 ℃- 1.85 2 . 5 0
(Terminal) T j = 1 2 5 ℃- 1.95 2 . 6 0
VF T j = 2 5 ℃- 1.75 2 . 4 0
(Chip) T j = 1 2 5 ℃- 1.85 2 . 5 0
R e v e r s e r e c o v e r y t i m e trr I F = 15 A - - 300 ns
Z e r o g a t e v o l t a g e
C o l l e c t o r c u r r e n t I CES V
G E = 0 V, VCE
6 0 0 V - - 1 . 0 m A
Gate-Emitter leakage current I G E S V
CE = 0 V, VGE
±20 V - - 200 n A
Gate-Emitter
threshold voltage VG E ( t h ) V
CE = 20 V, Ic = 4 mA 4 . 5 6.0 7. 5 V
C o l l e c t o r - E m i t t e r V
CE(sat) T j = 2 5 ℃- 2.45 3 . 0 0
(Terminal) V
G E = 15 V Tj=125℃- 2.95 3 . 4 5
V
CE(sat) I c = 10 A Tj=25℃- 2.40 2 . 9 5
saturation voltage (Chip) T j = 1 2 5 ℃- 2.90 3 . 4 0
I n p u t c a p a c i t a n c e C i e s V
G E = 0 V, VCE
10 V - 6 0 0 -
f = 1 MHz
T u r n - o n t i m e ton Vcc= 300 V - 0.60 1 . 2 0
tr I c = 10 A - 0.30 0 . 6 0 s
T u r n - o f f t i m e toff V
G E = ±15 V - 0.45 1 . 0 0
tf R G = 510 - 0.05 0 . 3 5
R e v e r s e r e c o v e r y t i m e trr I F = 10 A - - 350 ns
R e v e r s e c u r r e n t I RRM V
R = 600 V - - 1 . 0 0 m A
Forward on voltage V
F M chip - 1.1 -
terminal - 1.2 1 . 5
R e v e r s e c u r r e n t I RRM V
R = 800 V - - 1 . 0 m A
R e s i s t a n c e R T = 25oC 4 7 5 0 5 00 0 5 25 0
T =100oC - 4 9 5 -
B value B T = 25/50oC 3 3 0 5 3 37 5 3450 K
p F
V
Ω
I F = 15A
I F = 2 0 A
V
p F
V
V
Inverter
ConverterThermistor Brake
保守廃止予定機種
Not recommend for new design.
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