BT138-800E 4Q Triac 27 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated sensitive gate four quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in general purpose bidirectional switching and phase control applications. This sensitive gate "series E" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 1.2 Features and benefits * Direct triggering from low power drivers and logic ICs * High blocking voltage capability * Planar passivated for voltage ruggedness and reliability * Sensitive gate * Triggering in all four quadrants 1.3 Applications * General purpose motor control * General purpose switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDRM Conditions Min Typ Max Unit repetitive peak offstate voltage - - 800 V ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 C; state current tp = 20 ms; Fig. 4; Fig. 5 - - 95 A Tj junction temperature - - 125 C IT(RMS) RMS on-state current - - 12 A - 2.5 10 mA - 4 10 mA full sine wave; Tmb 99 C; Fig. 1; Fig. 2; Fig. 3 Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 C; Fig. 7 Scan or click this QR code to view the latest information for this product BT138-800E NXP Semiconductors 4Q Triac Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2- G-; - 5 10 mA - 11 25 mA - 150 - V/s Tj = 25 C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 C; Fig. 7 Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 125 C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb T2 mounting base; main terminal 2 mb Graphic symbol T2 T1 G sym051 1 2 3 TO-220AB (SOT78) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BT138-800E TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 BT138-800E/DG TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM repetitive peak off-state voltage BT138-800E Product data sheet Conditions All information provided in this document is subject to legal disclaimers. 27 July 2012 Min Max Unit - 800 V (c) NXP B.V. 2012. All rights reserved 2 / 12 BT138-800E NXP Semiconductors 4Q Triac Symbol Parameter Conditions Min Max Unit IT(RMS) RMS on-state current full sine wave; Tmb 99 C; Fig. 1; - 12 A - 95 A - 105 A Fig. 2; Fig. 3 ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 C; tp = 20 ms; Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 C; tp = 16.7 ms I t I t for fusing tp = 10 ms; sine-wave pulse - 45 A s dIT/dt rate of rise of on-state current IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/s; - 50 A/s - 50 A/s - 50 A/s - 10 A/s 2 2 2 T2+ G+ IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/s; T2+ GIT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/s; T2- GIT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/s; T2- G+ IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature -40 150 C Tj junction temperature - 125 C over any 20 ms period 003aaj938 15 IT(RMS) (A) 12 (A) 40 9 30 6 20 3 10 0 -50 Fig. 1. 99 C 0 50 100 Tmb (C) 0 150 RMS on-state current as a function of mounting base temperature; maximum values Fig. 2. BT138-800E Product data sheet 003aaj940 50 IT(RMS) 10-2 1 10 surge duration (s) f = 50 Hz; Tmb = 99 C RMS on-state current as a function of surge duration; maximum values All information provided in this document is subject to legal disclaimers. 27 July 2012 10-1 (c) NXP B.V. 2012. All rights reserved 3 / 12 BT138-800E NXP Semiconductors 4Q Triac 003aaj942 20 Ptot (W) 16 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 12 Tmb(max) (C) 101 = 180 120 95 90 107 60 30 8 113 4 119 0 0 3 6 9 12 125 15 IT(RMS) (A) = conduction angle Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values 003aaj944 100 ITSM (A) 80 60 40 ITSM IT t 20 1/f 0 Tj(init) = 25 C max 1 102 10 number of cycles (n) 103 f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT138-800E Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2012 (c) NXP B.V. 2012. All rights reserved 4 / 12 BT138-800E NXP Semiconductors 4Q Triac 003aaj945 103 ITSM IT ITSM (A) t tp Tj(init) = 25 C max 102 (1) (2) 10 10-5 10-4 10-3 10-2 10-1 tp (s) tp 20 ms (1) dIT/dt limit (2) T2- G+ quadrant limit Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base full cycle; Fig. 6 - - 1.5 K/W half cycle; Fig. 6 - - 2 K/W thermal resistance from junction to ambient in free air - 60 - K/W Rth(j-a) BT138-800E Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2012 (c) NXP B.V. 2012. All rights reserved 5 / 12 BT138-800E NXP Semiconductors 4Q Triac 003aaj343 10 Zth(j-mb) (K/W) 1 (1) 10-1 (2) PD 10-2 t tp 10-3 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) (1) Unidirectional (half cycle) (2) Bidirectional (full cycle) Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; - 2.5 10 mA - 4 10 mA - 5 10 mA - 11 25 mA - - 30 mA - - 40 mA - - 30 mA - - 40 mA Static characteristics IGT gate trigger current Tj = 25 C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 C; Fig. 7 IL latching current VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 C; Fig. 8 VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G+; Tj = 25 C; Fig. 8 IH holding current VD = 12 V; Tj = 25 C; Fig. 9 - - 30 mA VT on-state voltage IT = 15 A; Tj = 25 C; Fig. 10 - 1.4 1.65 V BT138-800E Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2012 (c) NXP B.V. 2012. All rights reserved 6 / 12 BT138-800E NXP Semiconductors 4Q Triac Symbol Parameter Conditions Min Typ Max Unit VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 C; - 0.7 1.5 V 0.25 0.4 - V VD = 800 V; Tj = 125 C - 0.1 0.5 mA VDM = 536 V; Tj = 125 C; (VDM = 67% - 150 - V/s - 2 - s Fig. 11 VD = 400 V; IT = 0.1 A; Tj = 125 C; Fig. 11 ID off-state current Dynamic characteristics dVD/dt rate of rise of off-state voltage of VDRM); exponential waveform; gate open circuit tgt gate-controlled turn-on ITM = 16 A; VD = 800 V; IG = 0.1 A; dIG/ time dt = 5 A/s 003aaj946 3 IGT IGT(25C) 003aaj947 3 IL IL(25C) (1) (2) 2 2 (3) (4) (1) (2) (3) 1 0 -50 1 (4) 0 50 100 Tj (C) 0 -50 150 (1) T2- G+ (2) T2- G(3) T2+ G(4) T2+ G+ Fig. 7. Fig. 8. 0 50 100 Tj (C) 150 Normalized latching current as a function of junction temperature Normalized gate trigger current as a function of junction temperature BT138-800E Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2012 (c) NXP B.V. 2012. All rights reserved 7 / 12 BT138-800E NXP Semiconductors 4Q Triac 003aaj948 3 003aaj949 40 IT (A) IH IH(25C) 30 2 20 1 (1) (2) (3) 10 0 -50 Fig. 9. 0 50 100 Tj (C) 0 150 0 0.5 1 1.5 2 2.5 VT (V) Vo = 1.175 V; Rs = 0.0316 Normalized holding current as a function of junction temperature (1) Tj = 125 C; typical values (2) Tj = 125 C; maximum values (3) Tj = 25 C; maximum values Fig. 10. On-state current as a function of on-state voltage 003aaj950 1.6 VGT VGT(25C) 1.2 0.8 0.4 -50 0 50 100 Tj (C) 150 Fig. 11. Normalized gate trigger voltage as a function of junction temperature BT138-800E Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2012 (c) NXP B.V. 2012. All rights reserved 8 / 12 BT138-800E NXP Semiconductors 4Q Triac 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3x) b2(2) (2x) 1 2 3 b(3x) e c e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION REFERENCES IEC SOT78 JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig. 12. TO-220AB (SOT78) BT138-800E Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2012 (c) NXP B.V. 2012. All rights reserved 9 / 12 BT138-800E NXP Semiconductors 4Q Triac In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 8. Legal information 8.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". 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BT138-800E Product data sheet Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 27 July 2012 (c) NXP B.V. 2012. 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Contents 1 1.1 1.2 1.3 1.4 Product profile ....................................................... 1 General description .............................................. 1 Features and benefits ...........................................1 Applications .......................................................... 1 Quick reference data ............................................ 1 2 Pinning information ............................................... 2 3 Ordering information ............................................. 2 4 Limiting values .......................................................2 5 Thermal characteristics .........................................5 6 Characteristics ....................................................... 6 7 Package outline ..................................................... 9 8 8.1 8.2 8.3 8.4 Legal information .................................................10 Data sheet status ............................................... 10 Definitions ...........................................................10 Disclaimers .........................................................10 Trademarks ........................................................ 11 (c) NXP B.V. 2012. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 27 July 2012 BT138-800E Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2012 (c) NXP B.V. 2012. All rights reserved 12 / 12