BT138-800E,127 - NXP Semiconductors

BT138-800E

4Q Triac

27 July 2012 Product data sheet

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1. Product profile

1.1 General description

Planar passivated sensitive gate four quadrant triac in a SOT78 (TO-220AB) plastic

package intended for use in general purpose bidirectional switching and phase control

applications. This sensitive gate "series E" triac is intended to be interfaced directly to

microcontrollers, logic integrated circuits and other low power gate trigger circuits.

1.2 Features and benefits

•Direct triggering from low power drivers and logic ICs

•High blocking voltage capability

•Planar passivated for voltage ruggedness and reliability

•Sensitive gate

•Triggering in all four quadrants

1.3 Applications

•General purpose motor control

•General purpose switching

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDRM repetitive peak off-

state voltage

- - 800 V

ITSM non-repetitive peak on-

state current

full sine wave; Tj(init) = 25 °C;

tp = 20 ms; Fig. 4; Fig. 5

- - 95 A

Tjjunction temperature - - 125 °C

IT(RMS) RMS on-state current full sine wave; Tmb ≤ 99 °C; Fig. 1;

Fig. 2; Fig. 3

- - 12 A

Static characteristics

VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 7

- 2.5 10 mAIGT gate trigger current

VD = 12 V; IT = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 7

- 4 10 mA

NXP Semiconductors BT138-800E

4Q Triac

Product data sheet 27 July 2012 2 / 12

Symbol Parameter Conditions Min Typ Max Unit

VD = 12 V; IT = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 7

- 5 10 mA

VD = 12 V; IT = 0.1 A; T2- G+;

Tj = 25 °C; Fig. 7

- 11 25 mA

Dynamic characteristics

dVD/dt rate of rise of off-state

voltage

VDM = 536 V; Tj = 125 °C; (VDM = 67%

of VDRM); exponential waveform; gate

open circuit

- 150 - V/µs

2. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 T1 main terminal 1

2 T2 main terminal 2

3 G gate

mb T2 mounting base; main

terminal 2

1 2

TO-220AB (SOT78)

sym051

3. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

BT138-800E TO-220AB plastic single-ended package; heatsink mounted; 1 mounting

hole; 3-lead TO-220AB

SOT78

BT138-800E/DG TO-220AB plastic single-ended package; heatsink mounted; 1 mounting

hole; 3-lead TO-220AB

SOT78

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDRM repetitive peak off-state voltage - 800 V

NXP Semiconductors BT138-800E

4Q Triac

Product data sheet 27 July 2012 3 / 12

Symbol Parameter Conditions Min Max Unit

IT(RMS) RMS on-state current full sine wave; Tmb ≤ 99 °C; Fig. 1;

Fig. 2; Fig. 3

- 12 A

full sine wave; Tj(init) = 25 °C;

tp = 20 ms; Fig. 4; Fig. 5

- 95 AITSM non-repetitive peak on-state

current

full sine wave; Tj(init) = 25 °C;

tp = 16.7 ms

- 105 A

I2t I2t for fusing tp = 10 ms; sine-wave pulse - 45 A2s

IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;

T2+ G+

- 50 A/µs

IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;

T2+ G-

- 50 A/µs

IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;

T2- G-

- 50 A/µs

dIT/dt rate of rise of on-state current

IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;

T2- G+

- 10 A/µs

IGM peak gate current - 2 A

PGM peak gate power - 5 W

PG(AV) average gate power over any 20 ms period - 0.5 W

Tstg storage temperature -40 150 °C

Tjjunction temperature - 125 °C

Tmb (°C)

-50 1501000 50

003aaj938

IT(RMS)

(A)

99 °C

Fig. 1. RMS on-state current as a function of mounting

base temperature; maximum values

surge duration (s)

10-2 10110-1

003aaj940

IT(RMS)

(A)

f = 50 Hz; Tmb = 99 °C

Fig. 2. RMS on-state current as a function of surge

duration; maximum values

NXP Semiconductors BT138-800E

4Q Triac

Product data sheet 27 July 2012 4 / 12

003aaj942

Ptot

(W)

IT(RMS) (A)

0 15126 93

conduction

angle

(degrees)

form

factor

120

180

2.8

2.2

1.9

1.57

Tmb(max)

(°C)

120

α = 180°

125

119

113

107

101

α = conduction angle

Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values

003aaj944

100

1 10 102103

number of cycles (n)

ITSM

(A)

ITSM

Tj(init)

C max

1/f

f = 50 Hz

Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum

values

NXP Semiconductors BT138-800E

4Q Triac

Product data sheet 27 July 2012 5 / 12

003aaj945

102

103

10-5 10-4 10-3 10-2 10-1

tp (s)

ITSM

(A)

TSM

j(init)

= 25 °C max

(1)

(2)

tp ≤ 20 ms

(1) dIT/dt limit

(2) T2- G+ quadrant limit

Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

full cycle; Fig. 6 - - 1.5 K/WRth(j-mb) thermal resistance

from junction to

mounting base half cycle; Fig. 6 - - 2 K/W

Rth(j-a) thermal resistance

from junction to

ambient

in free air - 60 - K/W

NXP Semiconductors BT138-800E

4Q Triac

Product data sheet 27 July 2012 6 / 12

003aaj343

10-1

10-2

Zth(j-mb)

(K/W)

10-3

tp (s)

10-5 1 1010-1

10-2

10-4 10-3

(1)

(2)

(1) Unidirectional (half cycle)

(2) Bidirectional (full cycle)

Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 7

- 2.5 10 mA

VD = 12 V; IT = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 7

- 4 10 mA

VD = 12 V; IT = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 7

- 5 10 mA

IGT gate trigger current

VD = 12 V; IT = 0.1 A; T2- G+;

Tj = 25 °C; Fig. 7

- 11 25 mA

VD = 12 V; IG = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 8

- - 30 mA

VD = 12 V; IG = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 8

- - 40 mA

VD = 12 V; IG = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 8

- - 30 mA

ILlatching current

VD = 12 V; IG = 0.1 A; T2- G+;

Tj = 25 °C; Fig. 8

- - 40 mA

IHholding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 30 mA

VTon-state voltage IT = 15 A; Tj = 25 °C; Fig. 10 - 1.4 1.65 V

NXP Semiconductors BT138-800E

4Q Triac

Product data sheet 27 July 2012 7 / 12

Symbol Parameter Conditions Min Typ Max Unit

VD = 12 V; IT = 0.1 A; Tj = 25 °C;

Fig. 11

- 0.7 1.5 VVGT gate trigger voltage

VD = 400 V; IT = 0.1 A; Tj = 125 °C;

Fig. 11

0.25 0.4 - V

IDoff-state current VD = 800 V; Tj = 125 °C - 0.1 0.5 mA

Dynamic characteristics

dVD/dt rate of rise of off-state

voltage

VDM = 536 V; Tj = 125 °C; (VDM = 67%

of VDRM); exponential waveform; gate

open circuit

- 150 - V/µs

tgt gate-controlled turn-on

time

ITM = 16 A; VD = 800 V; IG = 0.1 A; dIG/

dt = 5 A/µs

- 2 - µs

Tj (°C)

-50 1501000 50

003aaj946

IGT

IGT(25°C) (1)

(2)

(3)

(4)

(1)

(2)

(3)

(4)

(1) T2- G+

(2) T2- G-

(3) T2+ G-

(4) T2+ G+

Fig. 7. Normalized gate trigger current as a function of

junction temperature

Tj (°C)

-50 1501000 50

003aaj947

IL(25°C)

Fig. 8. Normalized latching current as a function of

junction temperature

NXP Semiconductors BT138-800E

4Q Triac

Product data sheet 27 July 2012 8 / 12

Tj (°C)

-50 1501000 50

003aaj948

IH(25°C)

Fig. 9. Normalized holding current as a function of

junction temperature

0 1 2

VT(V)

(A)

(

)

(

)

0.5 1.5 2.5

003aaj949

(

)

Vo = 1.175 V; Rs = 0.0316 Ω

(1) Tj = 125 °C; typical values

(2) Tj = 125 °C; maximum values

(3) Tj = 25 °C; maximum values

Fig. 10. On-state current as a function of on-state

voltage

Tj (°C)

-50 1501000 50

003aaj950

0.8

1.2

1.6

0.4

VGT

VGT(25°C)

Fig. 11. Normalized gate trigger voltage as a function of junction temperature

NXP Semiconductors BT138-800E

4Q Triac

Product data sheet 27 July 2012 9 / 12

7. Package outline

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT78 SC-46

3-lead TO-220AB

SOT78

08-04-23

08-06-13

Notes

1. Lead shoulder designs may vary.

2. Dimension includes excess dambar.

UNIT A

mm 4.7

4.1

1.40

1.25

0.9

0.6

0.7

0.4

16.0

15.2

6.6

5.9

10.3

9.7

15.0

12.8

3.30

2.79

3.8

3.5

DIMENSIONS (mm are the original dimensions)

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

0 5 10 mm

scale

b b1(2)

1.6

1.0

c D

1.3

1.0

b2(2) D1E e

2.54

L L1(1) L2(1)

max.

3.0

p q

3.0

2.7

2.6

2.2

1 2 3

L1(1)

b1(2)

(3×)

b2(2)

(2×)

e e

b(3×)

L2(1)

mounting

base

Fig. 12. TO-220AB (SOT78)

NXP Semiconductors BT138-800E

4Q Triac

Product data sheet 27 July 2012 10 / 12

8. Legal information

8.1 Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nxp.com.

8.2 Definitions

Preview — The document is a preview version only. The document is still

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NXP Semiconductors does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

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Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

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Applications — Applications that are described herein for any of these

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representation or warranty that such applications will be suitable for the

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Customers are responsible for the design and operation of their

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

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Characteristics sections of this document is not warranted. Constant or

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NXP Semiconductors BT138-800E

4Q Triac

Product data sheet 27 July 2012 11 / 12

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8.4 Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,

ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,

QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

NXP Semiconductors BT138-800E

4Q Triac

Product data sheet 27 July 2012 12 / 12

9. Contents

1 Product profile ....................................................... 1

1.1 General description .............................................. 1

1.2 Features and benefits ...........................................1

1.3 Applications .......................................................... 1

1.4 Quick reference data ............................................ 1

2 Pinning information ............................................... 2

3 Ordering information ............................................. 2

4 Limiting values .......................................................2

5 Thermal characteristics .........................................5

6 Characteristics .......................................................6

7 Package outline ..................................................... 9

8 Legal information .................................................10

8.1 Data sheet status ............................................... 10

8.2 Definitions ...........................................................10

8.3 Disclaimers .........................................................10

8.4 Trademarks ........................................................ 11

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 27 July 2012