TN2404K/TN2404KL/BS107KL New Product Vishay Siliconix N-Channel 240-V (D-S) MOSFET PRODUCT SUMMARY Part Number VDS Min (V) TN2404K 240 TN2404KL/BS107KL rDS(on) (W) VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2.0 0.2 4 @ VGS = 10 V 0.8 to 2.0 0.3 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. D Telephone Mute Switches, Ringer Circuits D Power Supply, Converters D Motor Control Low On-Resistance: 4 W Secondary Breakdown Free: 260 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Voltage No High-Temperature "Run-Away" TO-236 (SOT-23) G TO-226AA (TO-92) 1 3 S S 1 G TO-92-18RM (TO-18 Lead Form) Device Marking Front View D 1 2 "S" TN 2404KL xxyy G 2 "S" BS 107KL xxyy 3 "S" = Siliconix Logo xxyy = Date Code S 3 "S" = Siliconix Logo xxyy = Date Code D 2 D Top View Device Marking Front View TN2404K Marking Code: K1ywl K1 = Part Number Code for TN2404K y = Year Code w = Week Code l = Lot Traceability Top View Top View TN2404KL BS107KL ORDERING INFORMATION TN2404K-T1 TN2404KL-TA With Tape p and Reel Folding g Option p BS107KL-TA TN2404KL-TR1 BS107KL-TR1 Spool Option ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol TN2404K TN2404KL/BS107KL Drain-Source Voltage VDS 240 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) TA= 25_C TA= 70_C Pulsed Drain Currenta Power Dissipation ID IDM TA= 25_C TA= 70_C Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range PD RthJA TJ, Tstg V 0.2 0.3 0.16 0.25 0.8 1.4 0.36 0.8 0.23 0.51 350b 156 -55 to 150 Unit A W _C/W _C Notes a. Pulse width limited by maximum junction temperature. b. Surface mounted on an FR4 board. Document Number: 72225 S-31621--Rev. A , 11-Aug-03 www.vishay.com 1 TN2404K/TN2404KL/BS107KL New Product Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Symbol Test Conditions Min Typa V(BR)DSS VGS = 0 V, ID = 100 mA 240 257 VGS(th) VDS = VGS, ID = 250 mA 0.8 1.65 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V Zero Gate Voltage Drain Current IDSS On State Drain Currentb On-State ID(on) D( ) Parameter Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage "100 VDS = 192 V, VGS = 0 V Drain-Source On-Resistanceb Forward Transconductanceb Diode Forward Voltage 2.0 nA 1 10 TJ = 55_C VDS = 10 V, VGS =10 V 0.8 VDS = 10 V, VGS = 4.5 V 0.5 mA A VGS = 10 V, ID = 0.3 A 2.2 4 VGS = 4.5 V, ID = 0.2 A 2.3 4 VGS = 2.5 V, ID = 0.1 A 2.4 6 gfs VDS = 10 V, ID = 0.3 A 1.6 VSD IS = 0.3 A, VGS = 0 V 0.8 1.2 4.87 8 rDS(on) ( ) V W S V Dynamica Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.53 td(on) 5 10 12 20 35 60 16 25 Turn On Time Turn-On turn-Off Time tr td(off) tr VDS = 192 V, VGS = 10 V, ID = 0.5 A VDD = 60 V, RL = 200 W ID ] 0.3 A, VGEN = 10 V, RG = 25 W 0.56 nC nS Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. www.vishay.com 2 Document Number: 72225 S-31621--Rev. A , 11-Aug-03 TN2404K/TN2404KL/BS107KL New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 1.4 1.8 VGS = 10 thru 3 V I D - Drain Current (A) I D - Drain Current (A) 1.2 2.5 V 0.9 0.6 0.3 25_C 1.0 125_C 0.8 0.6 0.4 0.2 2V 0.0 0.0 0 1 2 3 4 5 0 1 3 4 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 6 300 250 3 C - Capacitance (pF) 4 VGS = 4.5 V VGS = 10 V 2 1 200 Ciss 150 100 50 0 0.0 Crss Coss 0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 ID - Drain Current (A) 20 30 40 50 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature Gate Charge 10 2.2 VDS = 192 V ID = 0.5 A VGS = 10 V ID = 0.3 A 2.0 r DS(on) - On-Resistance ( W) (Normalized) V GS - Gate-to-Source Voltage (V) 2 VDS - Drain-to-Source Voltage (V) 5 r DS(on) - On-Resistance ( W ) TC = -55_C 1.2 1.5 8 6 4 2 1.8 1.6 1.4 VGS = 4.5 V ID = 0.2 A 1.2 1.0 0.8 0.6 0 0 1 2 3 Qg - Total Gate Charge (nC) Document Number: 72225 S-31621--Rev. A , 11-Aug-03 4 5 0.4 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 TN2404K/TN2404KL/BS107KL New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 8 10 ID = 100 mA r DS(on) - On-Resistance ( W ) I S - Source Current (A) 7 1 TJ = -55_C 0.1 TJ = 25_C 0.01 6 ID = 50 mA 5 4 3 2 ID = 10 mA TJ = 150_C 1 0 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.3 0.2 ID = 250 mA V GS(th) Variance (V) 0.1 -0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -50 -25 0 25 50 75 100 125 150 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-236, TN2404K Only) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA =350_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 - 4 www.vishay.com 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72225 S-31621--Rev. A , 11-Aug-03 TN2404K/TN2404KL/BS107KL New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, TN2404KL and TO-92-18RM, BS107KL Only) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 156_C/W 0.02 0.01 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 0.1 1 10 100 1K 10 K t1 - Square Wave Pulse Duration (sec) Document Number: 72225 S-31621--Rev. A , 11-Aug-03 www.vishay.com 5