TN2404K/TN2404KL/BS107KL
Vishay Siliconix
New Product
Document Number: 72225
S-31621—Rev. A , 11-Aug-03 www.vishay.com
1
N-Channel 240-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number VDS Min (V) rDS(on) (W)VGS(th) (V) ID (A)
TN2404K
240
4 @ VGS = 10 V 0.8 to 2.0 0.2
TN2404KL/BS107KL
240
4 @ VGS = 10 V 0.8 to 2.0 0.3
FEATURES BENEFITS APPLICATIONS
DLow On-Resistance: 4 W
DSecondary Breakdown Free: 260 V
DLow Power/Voltage Driven
DLow Input and Output Leakage
DExcellent Thermal Stability
DLow Offset Voltage
DFull-Voltage Operation
DEasily Driven Without Buffer
DLow Error Voltage
DNo High-Temperature
“Run-Away”
DHigh-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays,
Transistors, etc.
DTelephone Mute Switches, Ringer Circuits
DPower Supply, Converters
DMotor Control
TO-226AA
(TO-92)
Top View
S
D
G
1
2
3
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
TN2404KL
Device Marking
Front View
“S” TN
2404KL
xxyy
“S” = Siliconix Logo
xxyy = Date Code
Marking Code: K1ywl
K1 = Part Number Code for TN2404K
y = Year Code
w = Week Code
l = Lot Traceability
TN2404K
TO-92-18RM
(TO-18 Lead Form)
Top View
D
S
G
1
2
3
BS107KL
Device Marking
Front View
“S” BS
107KL
xxyy
“S” = Siliconix Logo
xxyy = Date Code
ORDERING INFORMATION
TN2404K-T1
TN2404KL-TA With Tape and Reel Folding Option
BS107KL-TA
pgp
TN2404KL-TR1
Spool Option
BS107KL-TR1 Spool Option
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol TN2404K TN2404KL/BS107KL Unit
Drain-Source Voltage VDS 240
V
Gate-Source Voltage VGS "20
V
Continuous Drain Current (TJ = 150
_
C)
TA= 25_C
ID
0.2 0.3
Continuous Drain Current (TJ = 150_C) TA= 70_CID0.16 0.25 A
Pulsed Drain CurrentaIDM 0.8 1.4
Power Dissipation
TA= 25_C
PD
0.36 0.8
W
Power Dissipation TA= 70_CPD0.23 0.51 W
Thermal Resistance, Junction-to-Ambient RthJA 350b156 _C/W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface mounted on an FR4 board.
TN2404K/TN2404KL/BS107KL
Vishay Siliconix New Product
www.vishay.com
2Document Number: 72225
S-31621—Rev. A , 11-Aug-03
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min TypaMax Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 mA240 257
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA0.8 1.65 2.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 192 V, VGS = 0 V 1
mA
Zero Gate Voltage Drain Current IDSS TJ = 55_C10 mA
On State Drain Currentb
ID( )
VDS = 10 V, VGS =10 V 0.8
A
On-State Drain Current
b
ID(on) VDS = 10 V, VGS = 4.5 V 0.5 A
VGS = 10 V, ID = 0.3 A 2.2 4
Drain-Source On-ResistancebrDS(on) VGS = 4.5 V, ID = 0.2 A 2.3 4 W
()
VGS = 2.5 V, ID = 0.1 A 2.4 6
Forward Transconductancebgfs VDS = 10 V, ID = 0.3 A 1.6 S
Diode Forward Voltage VSD IS = 0.3 A, VGS = 0 V 0.8 1.2 V
Dynamica
Total Gate Charge Qg4.87 8
Gate-Source Charge Qgs VDS = 192 V, VGS = 10 V, ID = 0.5 A 0.56 nC
Gate-Drain Charge Qgd 1.53
T urn On Time
td(on) 5 10
T urn-On Time trVDD = 60 V, RL = 200 W12 20
nS
turn
-
Off Time
td(off)
,
ID ] 0.3 A, VGEN = 10 V, RG = 25 W35 60 n
S
t
urn-
Off Ti
me tr16 25
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
TN2404K/TN2404KL/BS107KL
Vishay Siliconix
New Product
Document Number: 72225
S-31621—Rev. A , 11-Aug-03 www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
50
100
150
200
250
300
0 1020304050
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0123456
0.0
0.3
0.6
0.9
1.2
1.5
1.8
012345
VGS = 10 thru 3 V TC = -55_C
125_C
25_C
Output Characteristics Transfer Characteristics
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)ID
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)ID
2 V
2.5 V
- On-Resistance (rDS(on) W)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150
0
2
4
6
8
10
012345
0
1
2
3
4
5
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VDS - Drain-to-Source Voltage (V)
Crss Coss
Ciss
VDS = 192 V
ID = 0.5 A
ID - Drain Current (A)
VGS = 4.5 V
ID = 0.2 A
VGS = 10 V
Gate Charge
On-Resistance vs. Drain Current
- Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
C - Capacitance (pF)
VGS
Capacitance
On-Resistance vs. Junction Temperature
TJ - Junction Temperature (_C)
(Normalized)
- On-Resistance (rDS(on) W)
VGS = 10 V
ID = 0.3 A
VGS = 4.5 V
TN2404K/TN2404KL/BS107KL
Vishay Siliconix New Product
www.vishay.com
4Document Number: 72225
S-31621—Rev. A , 11-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0
1
2
3
4
5
6
7
8
0246810
TJ = 150_C
10
0.001
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
- On-Resistance (rDS(on) W)
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
- Source Current (A)IS
TJ = 25_C
-0.5
-0.4
-0.3
-0.2
-0.1
-0.0
0.1
0.2
0.3
-50 -25 0 25 50 75 100 125 150
ID = 250 mA
Threshold Voltage
Variance (V)VGS(th)
TJ - Temperature (_C)
1
0.1
0.01
TJ = -55_C
ID = 50 mA
ID = 100 mA
10-3 10-2 1 10 60010-1
10-4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-236, TN2404K Only)
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = RthJA =350_C/W
3. TJM - TA = PDMZthJA(t)
t1
t2
t1t2
Notes:
4. Surface Mounted
PDM
ID = 10 mA
TN2404K/TN2404KL/BS107KL
Vishay Siliconix
New Product
Document Number: 72225
S-31621—Rev. A , 11-Aug-03 www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10 K
1
0.01
0.1
0.1 1 10010 1 K
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient
(TO-226AA, TN2404KL and TO-92-18RM, BS107KL Only)
Normalized Effective Transient
Thermal Impedance
t1 - Square Wave Pulse Duration (sec)
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 156_C/W
3. TJM - TA = PDMZthJA(t)
t1
t2
t1
Notes:
PDM
t2