MSFC110
MSFC110 – Rev 0 www.microsemi.com
Oct, 2011 1/4
Module Type
◆Diode
Maximum Ratings
Symbol Item Conditions Values Units
ID Output Current(D.C.) Tc=85℃ 110 A
IFSM Surge forward current t=10mS Tvj =45℃ 2250 A
i2t Circuit Fusing Consideration 25000 A2s
Visol Isolation Breakdown Voltage(R.M.S) a.c.50HZ;r.m.s.;1min 3000 V
Tvj Operating Junction Temperature -40 to +125 ℃
Tstg Storage Temperature -40 to +125 ℃
Mt Mounting Torque To terminals(M5) 3±15% Nm
Ms To heatsink(M6) 5±15% Nm
Weight Module（Approximately） 100 g
Thermal Characteristics
Symbol Item Conditions Values Units
Rth(j-c) Thermal Impedance, max. Junction to Case 0.14 ℃/W
Rth(c-s) Thermal Impedance, max. Case to Heatsink 0.10 ℃/W
Electrical Characteristics
Thyristor/Diode Modules
VRRM / VDRM 800 to 1600V
IFAV / ITAV 110Amp
Features
y International standard package
y High Surge Capability
y Glass passivated chip
y Simple Mounting
y Heat transfer through aluminum oxide
DBCceramic isolated metal baseplate
y UL E243882 approved
TYPE VRRM/VDRM VRSM
MSFC110-08
MSFC110-12
MSFC110-16
800V
1200V
1600V
900V
1300V
1700V
Circuit
Applications
y Power Converters
y Lighting Control
y DC Motor Control and Drives
y Heat and temperature control
Values
Symbol Item Conditions Min. Typ. Max. Units
VFM Forward Voltage Drop, max. T=25℃ IF =300A 1.65 V
IRRM Repetitive Peak Reverse Current,
max.
Tvj =25℃ VRD=VRRM
Tvj =125℃ VRD=VRRM
≤0.5
≤6
mA
mA
MSFC110
MSFC110 – Rev 0 www.microsemi.com
Oct, 2011 2/4
◆Thyristor
Maximum Ratings
Thermal Characteristics
Symbol Item Conditions Values Units
Rth(j-c) Thermal Impedance, max. Junction to Case 0.28 ℃/W
Rth(c-s) Thermal Impedance, max. Case to Heatsink 0.20 ℃/W
Electrical Characteristics
Symbol Item Conditions Values Units
ITAV Average On-State Current Sine 180o;Tc=85℃ 110 A
ITSM Surge On-State Current TVJ =45℃ t=10ms, sine
TVJ =125℃ t=10ms, sine
2250
1900 A
i2t Circuit Fusing Consideration TVJ =45℃ t=10ms, sine
TVJ =125℃ t=10ms, sine
25000
18000 A2s
Visol Isolation Breakdown Voltage(R.M.S) a.c.50HZ;r.m.s.;1min 3000 V
Tvj Operating Junction Temperature -40 to +130 ℃
Tstg Storage Temperature -40 to +125 ℃
Mt Mounting Torque To terminals(M5) 3±15% Nm
Ms To heatsink(M6) 5±15% Nm
di/dt Critical Rate of Rise of On-State
Current
TVJ= TVJM , 2/3VDRM ,IG =500mA
Tr<0.5us,tp>6us 150 A/us
dv/dt Critical Rate of Rise of Off-State
Voltage, min. TJ=TVJM ,2/3VDRM linear voltage rise 1000 V/us
a Maximum allowable acceleration 50 m/s2
Values
Symbol Item Conditions Min. Typ. Max. Units
VTM Peak On-State Voltage, max. T=25℃ I
T =300A 1.65 V
IRRM/IDRM
Repetitive Peak Reverse Current,
max. / Repetitive Peak Off-State
Current, max.
TVJ=TVJM ,VR=VRRM ,VD=
VDRM 20 mA
VTO On state threshold voltage
For power-loss
calculations only
(TVJ =125℃)
0.9 V
rT Value of on-state
slope resistance. max TVJ =TVJM 2 mΩ
VGT Gate Trigger Voltage, max. TVJ =25℃ , VD =6V 3 V
IGT Gate Trigger Current, max. TVJ =25℃ , VD =6V 150 mA
VGD Non-triggering gate voltage, max. TVJ=125℃,VD =2/3VDRM 0.25 V
IGD Non-triggering gate current, max. TVJ =125℃, VD =2/3VDRM 6 mA
IL Latching current, max. TVJ =25℃ , RG = 33 Ω 300 600 mA
IH Holding current, max. TVJ =25℃ , VD =6V 150 250 mA
tgd Gate controlled delay time TVJ=25℃,
IG=1A, diG/dt=1A/us 1 us
tq Circuit commutated turn-off time TVJ =TVJM 100
us
MSFC110
MSFC110 – Rev 0 www.microsemi.com
Oct, 2011 3/4
Performance Curves
Fi
g
1. Power dissi
p
ation Fig2.Forward Current Derating Curve
0 ITAV 50 100 A 150
200
W
150
100
50
PTAV
0
rec.30
rec.60
rec.120 sin.180
DC
Fig3. Transient thermal impedance Fig4. Max Non-Repetitive Forward Surge
Current
Fig5. Forward Characteristics
0.001 t 0.01 0.1 1 10 S 100
0.50
℃/ W
0.25
0
Zth(j-C)
Zth(j-S)
10 100 ms 1000
50HZ
2500
A
1250
0
0 VTM 0.5 1.0 1.5 V 2.0
300
A
200
100
IT
0
max.
Typ.
DC
sin.180
rec.120
rec.60
rec.30
ITAVM
200
A
160
120
80
40
0
0 Tc 50 100 ℃130
25℃
- - -125℃
MSFC110
MSFC110 – Rev 0 www.microsemi.com
Oct, 2011 4/4
Package Outline Information
CASE: F1
Dimensions in mm
Fig6. Gate trigger Characteristics
1/2·MSFC110
VGD125℃
IGD125℃
IGT
VGT
20V;20Ω
PG(tp)
0.001 IG 0.01 0.1 1 10 A 100
100
V
10
1
VG
0.1
-40℃
25℃
125℃
Tvj
×
