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LCAS Asymmetrical Discrete Device
These DO-214AA SIDACtor® devices are intended for LCAS (Line Circuit Access Switch)
applications that require asymmetrical protection in discrete (individual) packages. They
enable the protected equipment to meet various regulatory requirements including
GR 1089, ITU K.20, K.21, K.45, IEG 60950, UL 60950, and TIA-968-A (formerly known as
FCC Part 68).
* “L” in part number indicates RoHS compliance. For non-RoHS compliant device, delete “L” from part number.
For individual “SA”, “SB”, and “SC” surge ratings, see table below.
General Notes:
• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.
• IPP is a repetitive surge rating and is guaranteed for the life of the product.
• Listed SIDACtor® devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
• VDRM is measured at IDRM.
• VS is measured at 100 V/µs.
• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.
* Current waveform in µs
** Voltage waveform in µs
Electrical Parameters
Part
Number *
VDRM
Volts
VS
Volts
VT
Volts
IDRM
µAmps
IS
mAmps
IT
Amps
IH
mAmps
P1200S_L 100 130 4 5 800 2.2 120
P2000S_L 180 220 4 5 800 2.2 120
P2500S_L 230 290 4 5 800 2.2 120
Surge Ratings in Amps
Series
IPP
ITSM
50 / 60 Hz di/dt
0.2x310 *
0.5x700 **
2x10 *
2x10 **
8x20 *
1.2x50 **
10x160 *
10x160 **
10x560 *
10x560 **
5x320 *
9x720 **
10x360 *
10x360 **
10x1000 *
10x1000 **
5x310 *
10x700 **
Amps Amps Amps Amps Amps Amps Amps Amps Amps Amps Amps/µs
A 20 150 150 90 50 75 75 45 75 20 500
B25 250 250 150 100 100 125 80 100 30 500
C 50 500 400 200 150 200 175 100 200 50 500
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LCAS Asymmetrical Discrete Device
Telecom Design Guide • © 2006 Littelfuse 3 - 61 www.littelfuse.com
SIDACtor Devices
Note: Off-state capacitance (CO) is measured at 1 MHz with a 2 V bias.
Thermal Considerations
Package Symbol Parameter Value Unit
DO-214AA TJOperating Junction Temperature Range -40 to +150 °C
TSStorage Temperature Range -65 to +150 °C
RθJA Thermal Resistance: Junction to Ambient 90 °C/W
Capacitance Values
Part Number
pF
MIN MAX
P1200SAL 30 45
P1200SBL 30 65
P1200SCL 45 110
P2000SAL 25 35
P2000SBL 25 95
P2000SCL 35 95
P2500SAL 20 35
P2500SBL 20 35
P2500SCL 30 85
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LCAS Asymmetrical Discrete Device
I
H
I
T
I
S
I
DRM
V
DRM
V
T
+
V
-V
+I
-I
V
S
V-I Characteristics
50
100
0
t
r
t
d
0
Peak
Value
Half Value
t – Time (µs)
I
PP
– Peak Pulse Current – %I
PP
t
r
= rise time to peak value
t
d
= decay time to half value
Waveform = t
r
x t
d
tr x td Pulse Waveform
-8
-40 -20 0 20 40 60 80 100 120 140 160
-6
-4
0
2
4
6
8
10
12
14
Junction Temperature (T
J
) – ˚C
Percent of V
S
Change – %
25 ˚C
Normalized VS Change versus Junction Temperature
0.4
-40 -20 0 20 40 60 80 100 120 140 160
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Case Temperature (TC) – ˚C
Ratio of
IH
IH (TC = 25 ˚C)
25 ˚C
Normalized DC Holding Current versus Case Temperature
