Datasheet
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
ZDX130N50
Nch 500V 13A Power MOSFET
lOutline
VDSS
500V
TO-220FM
RDS(on) (Max.)
0.52W
ID
-13A
PD
40W
lFeatures
lInner circuit
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Type
Bulk
lApplication
-
Switching Power Supply
-
500
Drain - Source voltage
VDSS
500
V
-
ZDX130N50
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
Pulsed drain current
ID,pulse
*2
39
A
Tc = 25°C
Continuous drain current
ID
*1
A
13
Gate - Source voltage
VGSS
30
V
PD
40
W
Power dissipation (Tc = 25°C)
Junction temperature
Tj
150
°C
Range of storage temperature
Tstg
-55 to +150
°C
(1)
(3)
(2)
*1 BODY DIODE
(1) Gate
(2) Drain
(3) Source
1/11
2012.08 - Rev.B
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
ZDX130N50
Thermal resistance, junction - ambient
RDS(on)
*3
lElectrical characteristics(Ta = 25°C)
Parameter
Zero gate voltage drain current
IDSS
Drain - Source breakdown
voltage
V(BR)DSS
V
100
Symbol
Conditions
Unit
Min.
Typ.
3.125
°C/W
mA
lThermal resistance
Parameter
Symbol
Unit
Min.
Typ.
Max.
RthJA
-
-
Max.
500
-
VGS = 0V, ID = 1mA
VDS = 500V, VGS = 0V
-
-
-
0.4
-
-
0.52
W
VGS = 10V, ID = 6.5A
Static drain - source
on - state resistance
100
nA
V
Gate threshold voltage
VGS (th)
VDS = 10V, ID = 1mA
2.5
-
4.5
Gate - Source leakage current
IGSS
VGS = 30V, VDS = 0V
2/11
2012.08 - Rev.B
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
ZDX130N50
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 Pulsed
Gate - Source charge
Qgs
*3
Total gate charge
Qg
*3
VDD ⋍ 250V
Unit
Min.
Typ.
Max.
Qgd
*3
-
12.5
-
nC
-
40
-
-
60
-
pF
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
-
Reverse transfer capacitance
Crss
f = 1MHz
Input capacitance
Ciss
VGS = 0V
-
2180
-
Output capacitance
Coss
VDS = 25V
-
200
-
Turn - off delay time
td(off)
*3
RL = 50W
-
43
-
Unit
Min.
Typ.
Max.
Turn - on delay time
td(on)
*3
VDD ⋍ 250V, VGS = 10V
-
30
-
ns
Rise time
tr
*3
ID = 5A
-
25
-
lGate Charge characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Fall time
tf
*3
RG = 10W
-
15
-
S
Gate plateau voltage
V(plateau)
VDD ⋍ 250V, ID = 5A
-
5.5
-
V
ID = 5A
VGS = 10V
-
11.5
-
Gate - Drain charge
Transconductance
gfs
*3
VDS = 10V, ID = 6A
2.0
8.5
3/11
2012.08 - Rev.B
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
ZDX130N50
A
Max.
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Symbol
Conditions
Unit
Min.
Typ.
13
Inverse diode continuous,
forward current
IS *1
-
Forward voltage
VSD
*3
Inverse diode direct current,
pulsed
ISM *2
-
Tc = 25°C
-
39
A
VGS = 0V, IS = 13A
-
-
1.7
V
-
4/11
2012.08 - Rev.B
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
ZDX130N50
lElectrical characteristic curves
0
20
40
60
80
100
120
025 50 75 100 125 150 175
0.01
0.1
1
10
100
0.1 1 10 100 1000 10000
Ta=25ºC
Single Pulse
PW = 100us
PW = 1ms
PW = 10ms
Operation in this
area is limited
by RDS(on)
0.001
0.01
0.1
1
10
0.0001 0.01 1 100
Rth(ch
-c)=3.125ºC/W
Rth(ch-c)(t)=r(t)×Rth(ch-c)
top D=1
D=0.5
D=0.1
D=0.05
D=0.01
bottom Signle
Ta=25ºC
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area
Power Dissipation : PD/PD max. [%]
Drain Current : ID [A]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Normalized Transient Thermal Resistance : r(t)
Pulse Width : PW
[s]
Junction Temperature : Tj [°C] Drain - Source Voltage : VDS [V]
5/11
2012.08 - Rev.B
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
ZDX130N50
lElectrical characteristic curves
0.001
0.01
0.1
1
10
100
012345678
Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
VDS= 10V
400
450
500
550
600
650
700
750
800
-50 0 50 100 150
VGS = 0V
ID = 1mA
0
0.5
1
1.5
2
2.5
3
0 0.2 0.4 0.6 0.8 1
Ta=25ºC
Pulsed
VGS=10.0V
VGS=5.0V
VGS=6.0V
0
1
2
3
4
5
6
7
8
9
10
11
12
13
0 2 4 6 8 10
VGS=5.0V
VGS=10.0V
VGS=6.0V
Ta=25ºC
Pulsed
Fig.4 Typical Output Characteristics(I)
Drain Current : ID [A]
Drain - Source Voltage : VDS [V]
Fig.5 Typical Output Characteristics(II)
Drain Current : ID [A]
Drain - Source Voltage : VDS [V]
Fig.6 Breakdown Voltage
vs. Channel Temperature
Drain - Source Breakdown Voltage : V(BR)DSS [V]
Junction Temperature : Tj [°C]
Fig.7 Typical Transfer Characteristics
Gate - Source Voltage : VGS [V]
Drain Current : ID [A]
6/11
2012.08 - Rev.B
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
ZDX130N50
lElectrical characteristic curves
0.0
1.0
2.0
3.0
4.0
5.0
-50 -25 0 25 50 75 100 125 150
VDS = 10V
ID = 1mA
0.01
0.1
1
10
100
0.01 0.1 1 10 100
Ta= -25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
VDS= 10V
0
0.5
1
1.5
2
2.5
3
0 2 4 6 8 10
Ta=25ºC
ID = 13A
ID = 6.5A
Fig.8 Gate Threshold Voltage
vs. Channel Temperature
Gate Threshold Voltage : VGS(th) [V]
Junction Temperature : Tj [°C]
Fig.9 Transconductance vs. Drain Current
Transconductance : gfs [S]
Drain Current : ID [A]
Fig.10 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Gate - Source Voltage : VGS [V]
7/11
2012.08 - Rev.B
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
ZDX130N50
lElectrical characteristic curves
0
1
10
100
0.01 0.1 1 10 100
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
VGS= 10V
0
1
2
3
4
5
-50 0 50 100 150
VGS = 10V
ID = 13A
Junction Temperature : Tj [ºC]
Fig.12 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Fig.11 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Drain Current : ID [A]
8/11
2012.08 - Rev.B
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
ZDX130N50
lElectrical characteristic curves
Inverse Diode Forward Current : IS [A]
1
10
100
1000
10000
100000
0.01 0.1 1 10 100 1000
Coss
Crss
Ciss
Ta=25ºC
f=1MHz
VGS=0V
1
10
100
1000
10000
0.1 1 10 100
tr
tf
td(on)
td(off)
Ta=25ºC
VDD= 250V
VGS= 10V
RG=10W
0
5
10
010 20 30 40 50
Ta = 25ºC
VDD = 250V
ID = 13A
RG = 10W
0.01
0.1
1
10
0.0 0.5 1.0 1.5
VGS=0V
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
Fig.13 Typical Capacitance
vs. Drain - Source Voltage
Capacitance : C [pF]
Drain - Source Voltage : VDS [V]
Fig.15 Dynamic Input Characteristics
Gate - Source Voltage : VGS [V]
Total Gate Charge : Qg [nC]
Fig.14 Switching Characteristics
Switching Time : t [ns]
Drain Current : ID [A]
Fig.16 Inverse Diode Forward Current
vs. Source - Drain Voltage
Source - Drain Voltage : VSD [V]
9/11
2012.08 - Rev.B
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
ZDX130N50
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2　Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
10/11
2012.08 - Rev.B
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
ZDX130N50
lDimensions (Unit : mm)
Dimension in mm/inches
TO-220FM
MIN MAX MIN MAX
A 16.60 17.60 0.654 0.693
A1 1.80 2.20 0.071 0.087
A2 14.80 15.40 0.583 0.606
A4 6.80 7.20 0.268 0.283
b 0.70 0.85 0.028 0.033
b1 1.10 1.50 0.043 0.059
c 0.70 0.85 0.028 0.033
D 9.90 10.30 0.39 0.406
E 4.40 4.80 0.173 0.189
e
E1 2.70 3.00 0.106 0.118
F 2.80 3.20 0.11 0.126
L 11.50 12.50 0.453 0.492
p 3.00 3.40 0.118 0.134
Q 2.10 3.10 0.083 0.122
x - 0.381 - 0.015
2.54
0.10
DIM
MILIMETERS
INCHES
D
b1
E1
E
e
b
c
F
A2A1
AL
x A
A4
φp
Q
A
11/11
2012.08 - Rev.B
R1120A
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Notice
ROHM Customer Support System
http://www.rohm.com/contact/
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specied herein is subject to change for improvement without notice.
The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specied in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, ofce-automation equipment, commu-
nication devices, electronic appliances and amusement devices).
The Products specied in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, re or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, re control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-
controller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specied herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.