DSEP40-03AS HiPerFRED VRRM = 300 V I FAV = 40 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP40-03AS Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 (D2Pak) Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Industry standard outline RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130320b DSEP40-03AS Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 300 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 300 V IR reverse current, drain current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case typ. VR = 300 V TVJ = 25C 5 A VR = 300 V TVJ = 150C 0.1 mA TVJ = 25C 1.46 V 1.85 V 1.20 V IF = forward voltage drop min. 40 A IF = 80 A IF = 40 A IF = 80 A TVJ = 150 C TC = 120C rectangular 1.63 V T VJ = 175 C 40 A TVJ = 175 C 0.72 V d = 0.5 for power loss calculation only 10.7 m 0.85 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = 150 V f = 1 MHz TVJ = 25C 50 pF I RM max. reverse recovery current TVJ = 25 C 3.5 A t rr reverse recovery time IF = IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved K/W 0.25 TC = 25C 30 A; VR = 200 V -di F /dt = 200 A/s 175 340 W A TVJ = 125C 7 A TVJ = 25 C 35 ns TVJ = 125C 55 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20130320b DSEP40-03AS Package Ratings TO-263 (D2Pak) Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 35 Unit A -55 150 C -55 175 C 1) Weight 2 FC 20 mounting force with clip g 60 N Product Marking XXXXXXXXX Part No. IXYS yyww z Logo Date Code Assembly Line 000000 Assembly Code Ordering Standard Part Number DSEP40-03AS Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEP40-03AS * on die level Delivery Mode Tape & Reel Code No. 501174 T VJ = 175C Fast Diode V 0 max threshold voltage 0.72 V R 0 max slope resistance * 7.5 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 800 Data according to IEC 60747and per semiconductor unless otherwise specified 20130320b DSEP40-03AS Outlines TO-263 (D2Pak) Dim. L1 c2 Supplier Option A1 H D E A D1 W 4 L L2 1 2 3 c 2x e 3x b2 10.92 (0.430) mm (Inches) 2x b E1 9.02 (0.355) W Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 1 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 4 Data according to IEC 60747and per semiconductor unless otherwise specified 20130320b DSEP40-03AS Fast Diode 0.5 60 16 14 50 IF = 60 A 30 A 15 A 0.4 40 TVJ = 150C 10 0.3 125C 30 8 [C] [A] [A] 0.2 6 20 25C TVJ = 125C VR = 200 V 0.1 0.4 0.8 1.2 [V] 1.6 TVJ = 125C VR = 200 V 4 10 0.0 IF = 60 A 30 A 15 A 12 2.0 0 100 200 300 400 [A/s] 2 500 0 Fig. 2 Typ. reverse recovery charge Qrr versus -diF /dt Fig. 1 Forward current IF versus forward voltage VF 1.4 80 1.2 70 1.0 60 100 200 300 400 [A/s] 500 Fig. 3 Typ. reverse recovery current IRR versus -diF /dt 800 TVJ = 125C VR = 200 V 16 TVJ = 125C VR = 200 V IF = 30 A tfr 700 14 12 600 0.8 [ns] 0.6 50 [ns] IF = 60 A 30 A 15 A 40 IRR 0.4 VFR 30 Qrr 0.2 500 10 400 8 300 6 200 4 100 2 [V] 20 0 40 80 120 160 0 [C] 100 200 300 400 [A/s] 500 0 14 200 300 400 [A/s] 500 Fig. 6 Typ. forward recovery voltage VFR Fig. 5 Typ. reverse recovery time trr versus -diF /dt Fig. 4 Dynamic parameters Qrr, IRR versus TVJ 100 & forward recovery time tfr vs. diF /dt 1 TVJ = 125C VR = 200 V 12 10 IF = 15 A 8 [J] 30 A 60 A [K/W] 6 Rthi [K/W] 0.139 0.176 0.305 0.23 4 2 0 100 200 300 400 [A/s] 500 0.1 0.00 1 Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 0.01 0.1 [s] 1 ti [s] 0.00028 0.0033 0.028 0.17 10 Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20130320b