DSEP40-03AS
Low Loss and Soft Recovery
High Performance Fast Recovery Diode
Single Diode
HiPerFRED
4
1
3
Part number
DSEP40-03AS
Backside: cathode
FAV
rr
tns35
RRM
40
300
=
V= V
I= A
Features / Ad vantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
TO-263 (D2Pak)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20130320bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSEP40-03AS
n
s
3.5
A
T
VJ
=°C
reverse recovery time
A
7
35
55
n
s
I
RM
max. reverse recovery current
I
F
=A;30
25
T=125°C
VJ
-di
F
=A/µs200/dtt
rr
V
R
=V200
T
VJ
=°C25
T=125°C
VJ
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
1.46
R0.85 K/
W
R
min.
40
V
RSM
V
5T = 25°C
VJ
T = °C
VJ
m
A
0.1V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
120
P
tot
175
W
T = 25°C
C
RK/
W
40
300
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
1.85
T = 25°C
VJ
150
V
F0
V
0.72T = °C
VJ
175
r
F
10.7 m
Ω
V
1.20T = °C
VJ
I = A
F
V
40
1.63
I = A
F
80
I = A
F
80
threshold voltage
slope resistance for power loss calculation only
µ
150
V
RRM
V
300
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
50
j
unction capacitance V = V150 T = 25°Cf = 1 MHz
RVJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
175
340
A
300
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Fast Diode
300
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20130320bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSEP40-03AS
Ratings
Product M
a
r
k
i
n
g
Date Code
Part No.
Logo
Assembly Code
XXXXXXXXX
IXYS
yywwz
000000
Assembly Line
Package
T
VJ
°C
T
stg
°C150
storage temperature -55
Weight g2
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
F
C
N60
mount ing for ce w i th cli p 20
I
RMS
RMS current 35 A
per terminal
175-55
TO-263
(
D2Pak
)
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
1
)
DSEP40-03AS 501174Tape & Reel 800DSEP40-03ASStandard
threshold voltage V0.72
mΩ
V
0 max
R
0 max
slope resistance * 7.5
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Fast
Diode
175°C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130320bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSEP40-03AS
W
c2
A
A1
c
L
E
2x e
L1
D
321
3.81
(0.150)
1.78
(0.07)
2.54 (0.100)
3.05
(0.120)
10.92
(0.430)
9.02
(0.355)
mm (Inches)
Recommended min. foot print
3x b2
E1
2x b
H
D1
Supplier
Option
L2
4
minmaxminmax
A 4.06 4.83 0.160 0.190
A1
A2
b 0.51 0.99 0.020 0.039
b2 1.14 1.40 0.045 0.055
c 0.40 0.74 0.016 0.029
c2 1.14 1.40 0.045 0.055
D 8.38 9.40 0.330 0.370
D1 8.00 8.89 0.315 0.350
D2
E 9.65 10.41 0.380 0.410
E1 6.22 8.50 0.245 0.335
e
e1
H 14.61 15.88 0.575 0.625
L 1.78 2.79 0.070 0.110
L1 1.02 1.68 0.040 0.066
Wtyp.
0.02 0.040 typ.
0.0008 0.002
Dim. Millimeter Inches
typ. 0.10 typ. 0.004
2.41 0.095
0.098
4.28 0.169
All dimensions conform with
and/or within JEDEC standard.
2,54 BSC 0,100 BSC
2.5
4
1
3
Outlines TO-263 (D2Pak)
IXYS reserves the right to change limits, conditions and dimensions. 20130320bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSEP40-03AS
0.0 0.4 0.8 1.2 1.6 2.0
10
20
30
40
50
60
100 300 5000 200 400
20
30
40
50
60
70
80
0.001 0.01 0.1 1 10
0.1
1
0 40 80 120 160
0.2
0.4
0.6
0.8
1.0
1.2
1.4
[°C] [A/µs]
[s]
0 100 200 300 400 500
100
200
300
400
500
600
700
800
2
4
6
8
10
12
14
16
0 100 200 300 400 500
2
4
6
8
10
12
14
16
0 100 200 300 400 500
0.1
0.2
0.3
0.4
0.5
[µC]
[V] [A/µs]
[K/W]
I
F
=60 A
30 A
15 A
I
F
= 60 A
30 A
15 A
I
RR
Q
rr
I
F
= 60 A
30 A
15 A
V
FR
t
fr
125°C
T
VJ
=125°C
V
R
= 200 V
T
VJ
=125°C
V
R
= 200 V
I
F
=30A
T
VJ
=125°C
V
R
= 200 V
T
VJ
= 150°C
T
VJ
= 125°C
V
R
=200 V
Fig. 1 Forward current I
F
versus
forward voltage V
F
Fig. 2 Typ. reverse recovery charge
Q
rr
versus -di
F
/dt
Fig. 3 Typ. reverse recovery current
I
RR
versus -di
F
/dt
Fig. 4 Dynamic parameters
Q
rr
,I
RR
versus T
VJ
Fig. 5 Typ. reverse recovery time
t
rr
versus -di
F
/dt
Fig. 6 Typ. forward recovery voltage V
FR
& forward recovery time t
fr
vs. di
F
/
dt
Fig. 8 Transient thermal impedance junction to case
25°C
[A]
[A/µs]
[A]
[ns]
[A/µs]
[ns] [V]
0 100 200 300 400 500
2
4
6
8
10
12
14
[µJ]
[A/µs]
Fig. 7 Typ. recovery energy
E
rec
versus -di
F
/dt
T
VJ
=125°C
V
R
= 200 V
R
thi
[K/W]
0.139
0.176
0.305
0.23
t
i
[s]
0.00028
0.0033
0.028
0.17
I
F
=15 A
30 A
60 A
Fast Diode
IXYS reserves the right to change limits, conditions and dimensions. 20130320bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved