A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 OCNONE
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
V(BR)DSS ID = 50 mA VGS = 0 V 65 V
IDSS VDS = 28 V VGS = 0 V 2.5 mA
IGSS VDS = 0 V VGS = 20 V 1.0 µ
µµ
µA
VGS(th) ID =100 mA VDS = 10 V 1.0 3.0 6.0 V
VDS(on) ID = 5.0 A VGS = 10 V 1.5 V
gfs ID = 2.5 A VDS = 10 V 2.0 3.0 mhos
Ciss
Coss
Crss
VDS = 28 V VGS = 0 V f = 1.0 MHz 180
200
20 pF
Gps
η
ηη
η
ψ
ψψ
ψVDD = 28 V IDQ = 2 X 100 mA POUT = 200 W
f = 225 MHz
12
55
10:1
14
65
---
dB
%
---
RF POWER FIELD-EFFECT TRANSISTOR
MRF175GV
DESCRIPTION:
The ASI MRF175GV is a N-Channel
Enhancement-Mode Push Pull
MOSFET, Designed for FM, and TV
Solid State T r ansmitter Applications up
to 500 MHz.
MAXIMUM RATINGS
ID26 A
VDSS 65 V
PDISS 400 W @ TC = 25 OC
TJ-65 OC to +200 OC
TSTG -65 OC to +150 OC
θ
θθ
θJC 0.44 OC/W
PACKAGE STYLE
1 = DRAIN 2 = DRAIN(2) 3 = GATE(1)
4 = GATE(2) 5 = SO URCE (1&2) -CASE
