SIM75D12SV1 Preliminary "HALF-BRIDGE" IGBT MODULE VCES = 1200V Ic = 75A VCE(ON) typ. = 2.6V Features Applications Smarted NPT Technology Design AC & DC Motor controls 10s Short circuit capability VVVF inverters Low turn-off losses Optimized for high frequency inverter @ Ic = 75A Type Welding machines Short tail current for over 18KHZ Positive VCE(on) High frequency SMPS temperature coefficient Package : V1 UPS, Robotics Absolute Maximum Ratings @ Tc = 25 (per leg) Symbol Parameter VCES Collector-to-Emitter Voltage VGES Gate emitter voltage IC ICM IF VGE = 0V, Condition Ratings Unit IC = 500A 1200 V 20 V Continuous Collector Current TC = 80 75 A Pulsed collector current TC = 80 150 A Diode Continuous Forward Current TC = 80 75 A IFM Diode Maximum Forward Current 150 A TSC Short Circuit Withstand Time 10 s Viso Isolation Voltage test 2500 V Tj Junction Temperature -40 ~ 150 Tstg Storage Temperature -40 ~ 125 Weight of Module 190 g Power Terminal Screw : M5 3.5 Nm Terminal connection Screw : M5 3.5 Nm Weight Mounting Torque AC 1 minute Electrical Characteristics @ Tj = 25 (unless otherwise specified) Symbol Parameters Min Typ Max V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 - - VCE(ON) Collector-to-Emitter Saturation Voltage - 2.6 2.8 VGE(th) Gate Threshold Voltage - 5.0 6.0 ICES Zero Gate Voltage Collector Current - - 500 IGES Gate-to-Emitter Leakage Current - - VFM Diode Forward Voltage Drop - 2.1 -1- Unit Test conditions VGE = 0V, IC = 500A V IC = 75A, VGE = 15V VCE = VGE, IC = 500A A VGE = 0V, VCE = 1200V 100 nA VCE = 0V, VGE = 20V 2.4 V IC = 75A SIM75D12SV1 Preliminary Switching Characteristic @ Tj = 25 (unless otherwise specified) Symbol Parameters Min Typ Max Unit Cies Input capacitance - 4100 - Coss Output capacitance - 395 - Cres Reverse transfer capacitance - 160 - td(on) Turn-on delay time - 72 - Rise time - 32 - Turn-off delay time - 366 - tf Fall time - 46 - Irr Diode Peak Reverse Recovery current - 55 - A trr Diode Reverse Recovery time - 180 - ns tr td(off) Test conditions pF VCC = 30V, VGE = 0V Tj = 125, VCC = 600V IC = 75A, ns VGE = 15V RG = 4.7 Tj = 125, VCC = 600V IF = 75A, VGE = 15V RG = 4.7, di/dt=1200A/us Thermal Characteristic Values Symbol Parameters Min Typ Max RJC Junction-to-Case (IGBT Part, Per 1/2 Module) - - 0.26 RJC Junction-to-Case (Diode Part, Per 1/2 Module) - - 0.54 RCS Case-to-Heat Sink (Conductive grease applied) - 0.05 - -2- Unit /W Preliminary Fig 1. Maximum DC Collector Current SIM75D12SV1 Fig 2. Power Dissipation vs. Case vs. Case Temperature Temperature Fig 3. Typ. IGBT Output Characteristics Fig 4. Typ. IGBT Output Characteristics TJ = 25; tp = 80s TJ = 125; tp = 80s -3- Preliminary Fig 5. Typ. Diode Forward Characteristics SIM75D12SV1 Fig 6. Typ. Transfer Characteristics tp = 80s VCE = 50V; tp = 10s Fig 7. Typical VCE vs. VGE Fig 8. Typical VCE vs. VGE TJ = 25 TJ = 125 -4- Preliminary Fig 9. Typ. Capacitance vs. VCE SIM75D12SV1 Fig 10. Typical Gate Charge vs. VGE VGE = 0V; f = 1Mhz ICE = 60A; L = 600H Fig 11. Typ. Switching Time vs. IC Fig 12. Typ. Switching Time vs. RG TJ = 125; L = 200H; VCE = 600V TJ = 125; L = 200H; VCE = 600V RG = 4.7; VGE = 15V ICE = 75A; VGE = 15V -5- Preliminary SIM75D12SV1 Fig 13. Normalized Transient Thermal Impedance, Juncion-to-Case (IGBT) Fig 14. Normalized Transient Thermal Impedance, Juncion-to-Case (DIODE) -6- Preliminary SIM75D12SV1 Package Outline (dimensions in mm) JUNE 2008 Headquarter: #602, B/D, 402 BLD, BLK4, Techno-park, Wonmi-Gu, Bucheon-City, S.KOREA Tel)+82-32-234-4781, Fax)+82-32-234-4789 Sales & Marketing Marketing: clzhang@semiwell.com Sales: sales@semiwell.com WEB-site: WWW. Semiwell.com -7-