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SIM75D12SV1
Preliminary
Features
▪ Smarted NPT Technology Design
▪ 10µs Short circuit capability
▪ Low turn-off losses
▪ Short tail current for over 18KHZ
▪ Positive VCE(on)
temperature coefficient
Applications
▪ AC & DC Motor controls
▪ VVVF inverters
▪ Optimized for high frequency inverter
Type Welding machines
▪ High frequency SMPS
▪ UPS, Robotics Package : V1
“HALF-BRIDGE” IGBT MODULE
Absolute Maximum Ratings @ Tc = 25℃ (per leg)
Symbol Parameter Condition Ratings Unit
VCES Collector-to-Emitter Voltage VGE = 0V, IC = 500µA 1200 V
VGES Gate emitter voltage ± 20 V
IC Continuous Collector Current TC = 80℃ 75 A
ICM Pulsed collector current TC = 80℃ 150 A
IF Diode Continuous Forward Current TC = 80℃ 75 A
IFM Diode Maximum Forward Current 150 A
TSC Short Circuit Withstand Time 10 µs
Viso Isolation Voltage test AC 1 minute 2500 V
Tj Junction Temperature -40 ~ 150 ℃
Tstg Storage Temperature -40 ~ 125 ℃
Weight Weight of Module 190 g
Mounting
Torque
Power Terminal Screw : M5 3.5 Nm
Terminal connection Screw : M5 3.5 Nm
Electrical Characteristics @ Tj = 25℃ (unless otherwise specified)
Symbol Parameters Min Typ Max Unit Test conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 - -
V
VGE = 0V, IC = 500µA
VCE(ON) Collector-to-Emitter Saturation Voltage - 2.6 2.8 IC = 75A, VGE = 15V
VGE(th) Gate Threshold Voltage - 5.0 6.0 VCE = VGE, IC = 500µA
ICES Zero Gate Voltage Collector Current - - 500 µA VGE = 0V, VCE = 1200V
IGES Gate-to-Emitter Leakage Current - - ± 100 nA VCE = 0V, VGE = ± 20V
VFM Diode Forward Voltage Drop - 2.1 2.4 V IC = 75A
VCES = 1200V
Ic = 75A
VCE(ON) typ. = 2.6V
@ Ic = 75A
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SIM75D12SV1
Preliminary
Switching Characteristic @ Tj = 25℃ (unless otherwise specified)
Symbol Parameters Min Typ Max Unit Test conditions
Cies Input capacitance - 4100 -
pF VCC = 30V, VGE = 0V
Coss Output capacitance - 395 -
Cres Reverse transfer capacitance - 160 -
td(on) Turn-on delay time - 72 -
ns
Tj = 125℃, VCC = 600V
IC = 75A, VGE = 15V
RG = 4.7Ω
tr Rise time - 32 -
td(off) Turn-off delay time - 366 -
tf Fall time - 46 -
Irr Diode Peak Reverse Recovery current - 55 - A Tj = 125℃, VCC = 600V
IF = 75A, VGE = 15V
RG = 4.7Ω, di/dt=1200A/us
trr Diode Reverse Recovery time - 180 - ns
Thermal Characteristic Values
Symbol Parameters Min Typ Max Unit
RΘJC Junction-to-Case (IGBT Part, Per 1/2 Module) - - 0.26
℃/W
RΘJC Junction-to-Case (Diode Part, Per 1/2 Module) - - 0.54
RΘCS Case-to-Heat Sink (Conductive grease applied) - 0.05 -
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SIM75D12SV1
Preliminary
Fig 1. Maximum DC Collector Current
vs. Case Temperature
Fig 2. Power Dissipation vs. Case
Temperature
Fig 3. Typ. IGBT Output Characteristics
T
J = 25℃; tp = 80µs
Fig 4. Typ. IGBT Output Characteristics
T
J = 125℃; tp = 80µs
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SIM75D12SV1
Preliminary
Fig 5. Typ. Diode Forward Characteristics
tp = 80µs
Fig 6. Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
Fig 7. Typical VCE vs. VGE
T
J = 25℃
Fig 8. Typical VCE vs. VGE
T
J = 125℃
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SIM75D12SV1
Preliminary
Fig 9. Typ. Capacitance vs. VCE
VGE = 0V; f = 1Mhz
Fig 10. Typical Gate Charge vs. VGE
ICE = 60A; L = 600µH
Fig 11. Typ. Switching Time vs. IC
TJ = 125℃; L = 200µH; VCE = 600V
RG = 4.7Ω; VGE = 15V
Fig 12. Typ. Switching Time vs. RG
TJ = 125℃; L = 200µH; VCE = 600V
ICE = 75A; VGE = 15V
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SIM75D12SV1
Preliminary
Fig 13. Normalized Transient Thermal Impedance, Juncion-to-Case (IGBT)
Fig 14. Normalized Transient Thermal Impedance, Juncion-to-Case (DIODE)
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SIM75D12SV1
Preliminary
Headquarter:
#602, B/D, 402 BLD, BLK4, Techno-park, Wonmi-Gu,
Bucheon-City, S.KOREA
Tel)+82-32-234-4781, Fax)+82-32-234-4789
JUNE 2008
Package Outline (dimensions in mm)
Sales & Marketing
Marketing: clzhang@semiwell.com
Sales: sales@semiwell.com
WEB-site: WWW. Semiwell.com