DDATA SHEET
Product specification October 1997
DISCRETE SEMICONDUCTORS
BT150 series
Thyristors
logic level
1;3 Semiconductors Product specification
Thyristors BT150 series
logic level
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT
thyristors in a plastic envelope,
intended for use in general purpose BT150- 500R 600R 800R
switching and phase control VDRM, Repetitive peak off-state 500 600 800 V
applications. These devices are VRRM voltages
intended to be interfaced directly to IT(AV) Average on-state current 2.5 2.5 2.5 A
microcontrollers, logic integrated IT(RMS) RMS on-state current 4 4 4 A
circuits and other low power gate ITSM Non-repetitive peak on-state 35 35 35 A
trigger circuits. current
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 cathode
2 anode
3 gate
tab anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500R -600R -800R
VDRM, VRRM Repetitive peak off-state - 50016001800 V
voltages
IT(AV) Average on-state current half sine wave; Tmb ≤ 113 ˚C - 2.5 A
IT(RMS) RMS on-state current all conduction angles - 4 A
ITSM Non-repetitive peak half sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 10 ms - 35 A
t = 8.3 ms - 38 A
I2tI
2t for fusing t = 10 ms - 6.1 A2s
dIT/dt Repetitive rate of rise of ITM = 10 A; IG = 50 mA; - 50 A/μs
on-state current after dIG/dt = 50 mA/μs
triggering
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
VRGM Peak reverse gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C
TjOperating junction - 1252˚C
temperature
ak
g
123
tab
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
October 1997 1 Rev 1.300
1;3 Semiconductors Product specification
Thyristors BT150 series
logic level
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance - - 2.5 K/W
junction to mounting base
Rth j-a Thermal resistance in free air - 60 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IGT Gate trigger current VD = 12 V; IT = 0.1 A - 15 200 μA
ILLatching current VD = 12 V; IGT = 0.1 A - 0.17 10 mA
IHHolding current VD = 12 V; IGT = 0.1 A - 0.10 6 mA
VTOn-state voltage IT = 5 A - 1.23 1.8 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.4 1.5 V
VD = VDRM(max); IT = 0.1 A; Tj = 110 ˚C 0.1 0.2 - V
ID, IROff-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; - 50 - V/μs
off-state voltage exponential waveform; RGK = 100 Ω
tgt Gate controlled turn-on ITM = 10 A; VD = VDRM(max); IG = 5 mA; - 2 - μs
time dIG/dt = 0.2 A/μs
tqCircuit commutated VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 8 A; - 100 - μs
turn-off time VR = 10 V; dITM/dt = 10 A/μs;
dVD/dt = 2 V/μs; RGK = 1 kΩ
October 1997 2 Rev 1.300
1;3 Semiconductors Product specification
Thyristors BT150 series
logic level
Fig.1. Maximum on-state dissipation, P
tot
, versus
average on-state current, I
T(AV)
, where
a = form factor = I
T(RMS)
/ I
T(AV)
.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
10ms.
Fig.3. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
Fig.4. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤
113˚C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
0 0.5 1 1.5 2 2.5 3
0
1
2
3
4
5
6
a = 1.57
1.9
2.2
2.8
4
BT148
IF(AV) / A
Ptot / W Tmb(max) / C
125
122.5
120
117.5
115
112.5
110
conduction
angle
form
factor
degrees
30
60
90
120
180
4
2.8
2.2
1.9
1.57
a
1
1000
0
10
20
30
40
10 100
Number of half cycles at 50Hz
ITSM / A
TITSM
time
I
T
Tj initial = 25 C max
10
100
1000
BT148
ITSM / A
10us 100us 1ms 10ms
T / s
time
T
Tj initial = 25 C max
T
IITSM
dI /dt limit
T
0.01 0.1 1 10
0
2
4
6
8
10
12 BT150
surge duration / s
IT(RMS) / A
-50 0 50 100 150
0
1
2
3
4
5BT148
Tmb / C
IT(RMS) / A
113 C
-50 0 50 100 150
0.4
0.6
0.8
1
1.2
1.4
1.6 BT151
Tj / C
VGT(Tj)
VGT(25 C)
October 1997 3 Rev 1.300
1;3 Semiconductors Product specification
Thyristors BT150 series
logic level
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3BT148
Tj / C
IGT(Tj)
IGT(25 C)
0 0.5 1 1.5 2 2.5 3
0
2
4
6
8
10
12
typ
BT148
VT / V
IT / A
max
Tj = 125 C
Tj = 25 C
Vo = 1.26 V
Rs = 0.099 ohms
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3BT145
Tj / C
IL(Tj)
IL(25 C)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
0.01
0.1
1
10 BT148
tp / s
Zth j-mb (K/W)
tp
P
t
D
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3BT145
Tj / C
IH(Tj)
IH(25 C)
0 50 100 150
1
10
100
1000
Tj / C
dVD/dt (V/us)
RGK = 100 ohms
October 1997 4 Rev 1.300
1;3 Semiconductors Product specification
Thyristors BT150 series
logic level
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.13. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
123
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
October 1997 5 Rev 1.300
NXP Semiconductors
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