Order this document by MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment. * Specified Performance @ 470 MHz, 12.5 Volts Output Power -- 70 Watts Power Gain -- 10 dB Efficiency -- 50% * Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Broadband-Full Power Across the Band: 135-175 MHz 400-470 MHz * Broadband Demonstration Amplifier Information Available Upon Request * Available in Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. 470 MHz, 70 W, 12.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 1366-03, STYLE 1 TO-272 SPLIT LEAD PLASTIC MRF1570T1 CASE 1366A-02, STYLE 1 TO-272 STRAIGHT LEAD PLASTIC MRF1570FT1 MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating VDSS 40 Vdc Gate-Source Voltage VGS 20 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 165 0.5 Watts W/C Storage Temperature Range Tstg - 65 to +150 C Operating Junction Temperature TJ 175 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M2 (Minimum) Charge Device Model C2 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.75 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MOTOROLA RF DEVICE DATA Motorola, Inc. 2002 MRF1570T1 MRF1570FT1 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IDSS -- -- 1 A Gate Threshold Voltage (VDS = 12.5 Vdc, ID = 0.8 mAdc) VGS(th) 1.0 -- 3 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2.0 Adc) VDS(on) -- -- 1 Vdc Input Capacitance (Includes Input Matching Capacitance) (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Ciss -- -- 500 pF Output Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Coss -- -- 250 pF Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Crss -- -- 35 pF 10 -- -- 50 -- -- OFF CHARACTERISTICS Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS RF CHARACTERISTICS (In Motorola Test Fixture) Common-Source Amplifier Power Gain (VDD = 12.5 Vdc, Pout = 70 W, IDQ = 800 mA) f = 470 MHz Drain Efficiency (VDD = 12.5 Vdc, Pout = 70 W, IDQ = 800 mA) f = 470 MHz Gps Load Mismatch (VDD = 15.6 Vdc, f = 470 MHz, 2 dB Input Overdrive, VSWR 20:1 at All Phase Angles) MRF1570T1 MRF1570FT1 2 dB % No Degradation in Output Power Before and After Test MOTOROLA RF DEVICE DATA B1, B2, B3, B4, B5, B6 C1, C32, C37, C43 C2, C20, C21 C3 C4, C5 C6, C7 C8, C9 C10, C15 C11, C16, C33, C39 C12, C17, C34, C40 C13, C18, C35, C41 C14, C19, C36, C42 C22, C23 C24, C25 C26, C27 C28, C29 C30, C31 C38, C44 L1, L2 Long Ferrite Beads, Fair Rite Products 270 pF, 100 mil Chip Capacitors 33 pF, 100 mil Chip Capacitors 18 pF, 100 mil Chip Capacitor 30 pF, 100 mil Chip Capacitors 180 pF, 100 mil Chip Capacitors 150 pF, 100 mil Chip Capacitors 300 pF, 100 mil Chip Capacitors 10 F, 50 V Electrolytic Capacitors 0.1 F, 100 mil Chip Capacitors 1000 pF, 100 mil Chip Capacitors 470 pF, 100 mil Chip Capacitors 110 pF, 100 mil Chip Capacitors 68 pF, 100 mil Chip Capacitors 120 pF, 100 mil Chip Capacitors 24 pF, 100 mil Chip Capacitors 27 pF, 100 mil Chip Capacitors 240 pF, 100 mil Chip Capacitors 17.5 nH, 6 Turn Inductors, Coilcraft L3, L4 L5, L6, L7, L8 L9, L10 N1, N2 R1, R2 R3, R4 Z1 Z2, Z3 Z4, Z5 Z6, Z7 Z8, Z9, Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z18, Z19 Z20, Z21 Z22 Board 5 nH, 2 Turn Inductors, Coilcraft 1 Turn, #18 AWG, 0.33 ID Inductors 3 Turn, #16 AWG, 0.165 ID Inductors Type N Flange Mounts 25.5 Chip Resistors (1206) 9.3 Chip Resistors (1206) 0.32 x 0.080 Microstrip 0.46 x 0.080 Microstrip 0.34 x 0.080 Microstrip 0.45 x 0.080 Microstrip 0.28 x 0.240 Microstrip 0.39 x 0.080 Microstrip 0.27 x 0.080 Microstrip 0.25 x 0.080 Microstrip 0.29 x 0.080 Microstrip 0.14 x 0.080 Microstrip 0.32 x 0.080 Microstrip 31 mil Glass Teflon Figure 1. 135 - 175 MHz Broadband Test Circuit Schematic MOTOROLA RF DEVICE DATA MRF1570T1 MRF1570FT1 3 MRF1570T1 Figure 2. 135 - 175 MHz Broadband Test Circuit Component Layout TYPICAL CHARACTERISTICS, 135 - 175 MHZ ! +# +&&+$.' ()* !++"#+$"%&' 0 0 , - ./ , - ./ 0 0 ! "# $"%&' ()*! "# $"%&' Figure 3. Output Power versus Input Power Figure 4. Input Return Loss versus Output Power MRF1570T1 MRF1570FT1 4 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS, 135 - 175 MHZ !+% +# # 3+$4' 12 !++"#+ % +$.' , - ./ , - ./ ()*! "# $"%&' Figure 5. Gain versus Output Power Figure 6. Drain Efficiency versus Output Power !+% +# # 3+$4' , - ./ , .6 , - ./ , .6 5! %& # $6%' 5! %& # $6%' Figure 7. Output Power versus Biasing Current Figure 8. Drain Efficiency versus Biasing Current !+% +# # 3+$4' ()* !++"#+$"%&' ()*! "# $"%&' ()* !++"#+$"%&' , .6 5 , 6% , .6 5 , 6% ! &3 % # $&' ! &3 % # $&' Figure 9. Output Power versus Supply Voltage Figure 10. Drain Efficiency versus Supply Voltage MOTOROLA RF DEVICE DATA MRF1570T1 MRF1570FT1 5 B1, B2, B3, B4, B5, B6 C1, C9, C15, C32 C2, C3 C4 C5, C6 C7, C8 C10, C16, C37, C42 C11, C17, C33, C38 C12, C18, C34, C39 C13, C19, C35, C40 C14, C20, C36, C41 C21, C22 C23, C24 C25, C26 C27, C28 C29, C30 C31 Long Ferrite Beads, Fair Rite Products 270 pF, 100 mil Chip Capacitors 7.5 pF, 100 mil Chip Capacitors 5.1 pF, 100 mil Chip Capacitor 180 pF, 100 mil Chip Capacitors 47 pF, 100 mil Chip Capacitors 120 pF, 100 mil Chip Capacitors 10 F, 50 V Electrolytic Capacitors 470 pF, 100 mil Chip Capacitors 1200 pF, 100 mil Chip Capacitors 0.1 F, 100 mil Chip Capacitors 33 pF, 100 mil Chip Capacitors 27 pF, 100 mil Chip Capacitors 15 pF, 100 mil Chip Capacitors 2.2 pF, 100 mil Chip Capacitors 6.2 pF, 100 mil Chip Capacitors 1.0 pF, 100 mil Chip Capacitor L1, L2, L3, L4 L5, L6 N1, N2 R1, R2 R3, R4 Z1 Z2 Z3, Z4 Z5, Z6 Z7, Z8 Z9, Z10 Z11, Z12 Z13, Z14 Z15, Z16 Z17, Z18 Z19 Board 1 Turn, #18 AWG, 0.085 ID Inductors 2 Turn, #16 AWG, 0.165 ID Inductors Type N Flange Mounts 25.5 Chip Resistors (1206) 10 Chip Resistors (1206) 0.240 x 0.080 Microstrip 0.185 x 0.080 Microstrip 1.500 x 0.080 Microstrip 0.150 x 0.240 Microstrip 0.140 x 0.240 Microstrip 0.140 x 0.240 Microstrip 0.150 x 0.240 Microstrip 0.270 x 0.080 Microstrip 0.680 x 0.080 Microstrip 0.320 x 0.080 Microstrip 0.380 x 0.080 Microstrip 31 mil Glass Teflon Figure 11. 400 - 470 MHz Broadband Test Circuit Schematic MRF1570T1 MRF1570FT1 6 MOTOROLA RF DEVICE DATA MRF1570T1 Figure 12. 400 - 470 MHz Broadband Test Circuit Component Layout TYPICAL CHARACTERISTICS, 400 - 470 MHZ ! +# +&&+$.' ()* !++"#+$"%&' , - ./ 0 0 0 , - ./ 0 ! "# $"%&' ()*! "# $"%&' Figure 13. Output Power versus Input Power Figure 14. Input Return Loss versus Output Power MOTOROLA RF DEVICE DATA MRF1570T1 MRF1570FT1 7 TYPICAL CHARACTERISTICS, 400 - 470 MHZ !+% +# # 3+$4' 12 !++"#+ % +$.' , - ./ ()*! "# $"%&' ()*! "# $"%&' Figure 15. Gain versus Output Power Figure 16. Drain Efficiency versus Output Power !+% +# # 3+$4' ()* !++"#+$"%&' , - ./ , .6 , - ./ , .6 5! %& # $6%' 5! %& # $6%' Figure 17. Output Power versus Biasing Current Figure 18. Drain Efficiency versus Biasing Current !+% +# # 3+$4' ()* !++"#+$"%&' , - ./ , .6 5 , 6% Figure 19. Output Power versus Supply Voltage , .6 5 , 6% ! &3 % # $&' MRF1570T1 MRF1570FT1 8 ! &3 % # $&' Figure 20. Drain Efficiency versus Supply Voltage MOTOROLA RF DEVICE DATA B1, B2, B3, B4, B5, B6 C1, C8, C14, C28 C2, C3 C4, C5 C6, C7 C9, C15, C33, C38 C10, C16, C29, C34 C11, C17, C30, C35 C12, C18, C31, C36 C13, C19, C32, C37 C20, C21 C22, C23 C24, C25, C26, C27 L1, L2 L3, L4 Long Ferrite Beads, Fair Rite Products 270 pF, 100 mil Chip Capacitors 10 pF, 100 mil Chip Capacitors 180 pF, 100 mil Chip Capacitors 47 pF, 100 mil Chip Capacitors 120 pF, 100 mil Chip Capacitors 10 F, 50 V Electrolytic Capacitors 470 pF, 100 mil Chip Capacitors 1200 pF, 100 mil Chip Capacitors 0.1 F, 100 mil Chip Capacitors 22 pF, 100 mil Chip Capacitors 20 pF, 100 mil Chip Capacitors 5.1 pF, 100 mil Chip Capacitors 1 Turn, #18 AWG, 0.115 ID Inductors 2 Turn, #16 AWG, 0.165 ID Inductors N1, N2 R1, R2 R3, R4 Z1 Z2, Z3 Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z18, Z19 Z20 Board Type N Flange Mounts 1.0 k Chip Resistors (1206) 10 Chip Resistors (1206) 0.40 x 0.080 Microstrip 0.26 x 0.080 Microstrip 1.35 x 0.080 Microstrip 0.17 x 0.240 Microstrip 0.12 x 0.240 Microstrip 0.14 x 0.240 Microstrip 0.15 x 0.240 Microstrip 0.18 x 0.172 Microstrip 1.23 x 0.080 Microstrip 0.12 x 0.080 Microstrip 0.40 x 0.080 Microstrip 31 mil Glass Teflon Figure 21. 450 - 520 MHz Broadband Test Circuit Schematic MOTOROLA RF DEVICE DATA MRF1570T1 MRF1570FT1 9 MRF1570T1 Figure 22. 450 - 520 MHz Broadband Test Circuit Component Layout TYPICAL CHARACTERISTICS, 450 - 520 MHZ ! +# +&&+$.' ()* !++"#+$"%&' 0 0 0 0 , - ./ , - ./ ! "# $"%&' Figure 23. Output Power versus Input Power MRF1570T1 MRF1570FT1 10 0 ()*! "# $"%&' Figure 24. Input Return Loss versus Output Power MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS, 450 - 520 MHZ !+% +# # 3+$4' 12 !++"#+ % +$.' , - ./ , - ./ ()*! "# $"%&' Figure 26. Drain Efficiency versus Output Power !+% +# # 3+$4' ()* !++"#+$"%&' ()*! "# $"%&' Figure 25. Gain versus Output Power , - ./ , .6 , - ./ , .6 5! %& # $6%' 5! %& # $6%' Figure 27. Output Power versus Biasing Current Figure 28. Drain Efficiency versus Biasing Current !+% +# # 3+$4' ()* !++"#+$"%&' , .6 5 , 6% , .6 5 , 6% ! &3 % # $&' ! &3 % # $&' Figure 29. Output Power versus Supply Voltage Figure 30. Drain Efficiency versus Supply Voltage MOTOROLA RF DEVICE DATA MRF1570T1 MRF1570FT1 11 8 7 , 7 , 7 , 7 , ( , 7 , 7 , ( , 7 , 8 7 , 7 , 7 , 8 7 , 7 , , - ! 5 , - %! ()* , " , - ! 5 , - %! ()* , " , - ! 5 , - %! ()* , " f MHz Zin ZOL* f MHz Zin ZOL* f MHz Zin ZOL* 135 2.8 +j0.05 0.65 +j0.42 400 0.92 -j0.71 1.05 -j1.10 450 0.94 -j1.12 0.61 -j1.14 155 3.9 +j0.34 1.01 +j0.63 440 1.12 -j1.11 0.83 -j1.45 470 1.03 -j1.17 0.62 -j1.12 175 2.4 -j0.47 0.71 +j0.37 470 0.82 -j0.79 0.59 -j1.43 500 0.95 -j1.71 0.75 -j1.03 520 0.62 -j1.74 0.77 -j0.97 Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Notes: Impedance Zin was measured with input terminated at 50 W. Impedance ZOL was measured with output terminated at 50 W. 1)* 9*/:; <*=(>? )*1)* 9*/:; <*=(>? <@/< .<> <2* Z in Z * OL Figure 31. Series Equivalent Input and Output Impedance MRF1570T1 MRF1570FT1 12 MOTOROLA RF DEVICE DATA APPLICATIONS INFORMATION DESIGN CONSIDERATIONS This device is a common-source, RF power, N-Channel enhancement mode, Lateral Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). Motorola Application Note AN211A, "FETs in Theory and Practice", is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF mobile power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. >9 ;. 9*< .2 22 , ;. ;2 (22 , ;. .2 >22 , ;. ;2 &()>/< DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate-source voltage and drain current. The MOTOROLA RF DEVICE DATA drain-source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 800 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. MRF1570T1 MRF1570FT1 13 MOUNTING The specified maximum thermal resistance of 0.75C/W assumes a majority of the 0.170 x 0.608 source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. Refer to Motorola Application Note AN4005/D, "Thermal Management and Mounting Method for the PLD-1.5 RF Power Surface Mount Package," and Engineering Bulletin EB209/D, "Mounting Method for RF Power Leadless Surface Mount Transistor" for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples MRF1570T1 MRF1570FT1 14 see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large-signal impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. See Motorola Application Note AN215A, "RF Small-Signal Design Using Two-Port Parameters" for a discussion of two port network theory and stability. MOTOROLA RF DEVICE DATA NOTES MOTOROLA RF DEVICE DATA MRF1570T1 MRF1570FT1 15 NOTES MRF1570T1 MRF1570FT1 16 MOTOROLA RF DEVICE DATA NOTES MOTOROLA RF DEVICE DATA MRF1570T1 MRF1570FT1 17 PACKAGE DIMENSIONS 2X 999 4X B E1 A E2 P % b2 999 5 1 6 2 CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC 8 (b1) 7 2X b3 D D1 D2 4X 7 e 3 4X 6 e1 4X 8 b1 999 4 5 E C SEATING PLANE D SEATING PLANE A1 q A2 DATUM PLANE H &3# A - & # $ ' % % & # $ ' & # $ ' %# %# & # $ ' c1 CASE 1366-03 ISSUE B TO-272 SPLIT LEAD PLASTIC MRF1570T1 MRF1570T1 MRF1570FT1 18 4 3 CCC % 2 1 VIEW Y-Y Y L NOTE 6 #&A - # & A - ## # & & % #% #& # %&# 3-! - % % # 00 & %# % #% % & # " # #% "## # #% #B& # %& 3 % # # % #- # & % # # & - %"%# & & - # &#- # & % # # &% % %# ## # % % % # 00- # & & C % C # %% & - %"%# %% & &% # - % #B #&& # C % C # & & % %B %#% - &&% ##&# & # #B&# %#% # #% & - A Y DRAIN ID DIM A A1 A2 D D1 D2 E E1 E2 L P b1 b2 b3 c1 e e1 q aaa bbb INCHES MIN MAX - - - - - - - - -+& -+& - - - - -+& - - - - - - - - - - - - -+& -+& +_ +_ - - MILLIMETERS MIN MAX - - - - - - - - -+& -+& - - - - -+& - - - - - - - - - - - - -+& -+& _ _ - - MOTOROLA RF DEVICE DATA 2X 999 E1 A B P % 999 3X 5 1 6 2 E2 b 8 3X e2 2X b2 999 4X D1 (b1) b3 7 D D2 4X e 4X 7 e1 3 6 4X 999 b1 4 8 5 b4 CCC % 4X CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC DRAIN ID NOTE 5 4 3 2 1 VIEW Y-Y E c1 A D SEATING PLANE F Y &3# A - A1 ZONE "J" Y & # $ ' % % & # $ ' & # $ ' %# %# & # $ ' 6 A2 #&A - # & A - ## # & & % #% #& # %&# 3-! - # & & DD % D#D # & - %"%# & & - # &#- # & & DD % D#D # &% % %# ## # % % % # 00- # & & DCD % DCD # %% & - %"%# %% & &% # - % #B #&& # DCD % DCD # & & % %B %#% - &&% ##&# & # #B&# %#% # #% & - # & % %#& " # DED 3- DIM A A1 A2 D D1 D2 E E1 E2 F P b b1 b2 b3 b4 c1 e e1 e2 aaa bbb INCHES MIN MAX - - - - - - - - -+& -+& - - - - -+& -+& - - - - - - - - - - - - - - -+& -+& -+& - - MILLIMETERS MIN MAX - - - - - - - - -+& -+& - - - - -+& -+& - - - - - - - - - - - - - - -+& -+& -+& - - CASE 1366A-02 ISSUE A TO-272 STRAIGHT LEAD PLASTIC MRF1570FT1 MOTOROLA RF DEVICE DATA MRF1570T1 MRF1570FT1 19 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and the Stylized M Logo are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Motorola and the Stylized M Logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu. Minato-ku, Tokyo 106-8573 Japan. 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852-26668334 Technical Information Center: 1-800-521-6274 HOME PAGE: http://www.motorola.com/semiconductors MRF1570T1 MRF1570FT1 20 MOTOROLA RF DEVICE DATA MRF1570T1/D