PD-94283E RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) IRHMS597160 JANSR2N7550T1 100V, P-CHANNEL REF: MIL-PRF-19500/713 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHMS597160 100K Rads (Si) 0.05 IRHMS593160 300K Rads (Si) 0.05 ID -45A -45A QPL Part Number JANSR2N7550T1 JANSF2N7550T1 Low-Ohmic TO-254AA International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n n Single Event Effect (SEE) Hardened Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electically Isolated Ceramic Eyelets Light Weight High Electrical Conductive Package Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = -12V, TC=25C ID @ VGS = -12V, TC=100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight Units -45 -28.5 -180 208 1.67 20 480 -45 20.8 -6.0 -55 to 150 A W W/C V mJ A mJ V/ns C 300 (0.063in./1.6mm from case for 10s) 9.3 (Typical) g For footnotes refer to the last page www.irf.com 1 12/13/07 IRHMS597160, JANSR2N7550T1 Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) BVDSS Parameter Min Drain-to-Source Breakdown Voltage -100 BVDSS /T J Temperature Coefficient of Breakdown -- Voltage RDS(on) Static Drain-to-Source On-State -- Resistance VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 24 IDSS Zero Gate Voltage Drain Current -- -- Typ Max Units Test Conditions -- -- V -0.13 -- V/C -- 0.05 VGS = -12V, ID = -28.5A A -- -- -- -- -4.0 -- -10 -25 V S VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -28.5A A VDS= -80V ,VGS=0V VDS = -80V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS =-12V, ID = -45A VDS = -50V IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -100 100 170 65 30 35 100 100 100 -- Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 6110 1574 115 -- -- -- A nA nC VDD = -50V, ID = -45A VGS =-12V, RG = 1.2 ns nH pF VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time -- -- -- -- -- -- -- -- -- -- -45 -180 -5.0 200 1.6 Test Conditions A V ns C Tj = 25C, IS = -45A, VGS = 0V A Tj = 25C, IF =-45A, di/dt -100A/s VDD -50V A Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max Units -- -- -- -- 0.21 -- 0.6 -- 48 Test Conditions C/W Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHMS597160, JANSR2N7550T1 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) VSD 100K Rads(Si)1 Min Max 300KRads(Si)2 Min Max -100 -2.0 -- -- -- -- -- -4.0 -100 100 -10 0.05 -100 -2.0 -- -- -- -- -- -5.0 -- Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) Diode Forward Voltage A Units -- -5.0 -100 100 -10 0.05 A -5.0 V Test Conditions VGS = 0V, ID = -1.0mA VGS = VDS , ID = -1.0mA VGS =-20V VGS = 20 V VDS = -80V, VGS =0V VGS = -12V, ID =-28.5A V nA VGS = 0V, IS = -45A 1. Part number IRHMS597160 (JANSR2N7550T1) 2. Part number IRHMS593160 (JANSF2N7550T1) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Energy (MeV) 252.6 314 350 VDS Br I Au LET (MeV/(mg/cm2)) 37.9 59.7 82.3 VDS (V) Range (m) @VGS=0V @VGS=5V @VGS=10V @V GS=15V @VGS=17.5V @VGS=20V 33.1 -100 -100 -100 -100 -100 -100 30.5 -100 -100 -100 -100 -75 -25 28.4 -100 -100 -100 -30 -- -- -120 -100 -80 -60 -40 -20 0 Br I Au 0 5 10 15 20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHMS597160, JANSR2N7550T1 1000 Pre-Irradiation 1000 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 100 100 -5.0V 10 20s PULSE WIDTH TJ = 25 C 1 0.1 1 10 -5.0V 10 100 TJ = 25 C TJ = 150 C V DS = 15 -50V 20s PULSE WIDTH 6.0 6.5 7.0 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 10 100 Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 1000 5.5 1 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 20s PULSE WIDTH TJ = 150 C 1 0.1 -VDS , Drain-to-Source Voltage (V) 10 5.0 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP TOP 2.5 ID = -45A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 8000 Ciss 6000 Coss 4000 2000 20 -VGS , Gate-to-Source Voltage (V) 10000 IRHMS597160, JANSR2N7550T1 1 12 8 4 0 10 VDS =-80V VDS =-50V VDS =-20V 16 Crss 0 ID = -45A 100 FOR TEST CIRCUIT SEE FIGURE 13 0 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 80 120 160 200 240 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 -I D, Drain-to-Source Current (A) -ISD , Reverse Drain Current (A) 40 QG, Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) 100 TJ = 150 C 100 TJ = 25 C 10 1 V GS = 0 V 0.1 0.0 1.5 3.0 4.5 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com OPERATION IN THIS AREA LIMITED BY R DS(on) 6.0 100s 10 1 1ms Tc = 25C Tj = 150C Single Pulse 1 10ms 10 100 1000 -V DS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHMS597160, JANSR2N7550T1 Pre-Irradiation 50 V GS 40 -I D, Drain Current (A) RD V DS D.U.T. RG - + 30 V DD V GS Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 td(on) tr t d(off) tf VGS 10% 0 25 50 75 100 125 150 T C , Case Temperature (C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 P DM t1 SINGLE PULSE ( THERMAL RESPONSE ) t2 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHMS597160, JANSR2N7550T1 L 1000 - D.U.T RG VGS -20V + IAS tp VVDD DD DRIVER A 0.01 15V Fig 12a. Unclamped Inductive Test Circuit I AS EAS , Single Pulse Avalanche Energy (mJ) VDS ID -20A -28.5A BOTTOM -45A TOP 800 600 400 200 0 25 50 75 100 125 Starting TJ , Junction Temperature ( C) 150 Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG -12 V QGS 50K -12V 12V .2F .3F QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHMS597160, JANSR2N7550T1 Pre-Irradiation Footnotes: A Pulse width 300s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias. A Repetitive Rating; Pulse width limited by maximum junction temperature. A VDD = -50V, starting TJ = 25C, L=0.48mH Peak IL = -45A, VGS = -12V A ISD -45A, di/dt -365A/s, VDD -100V, TJ 150C -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions -- Low-Omic TO-254AA 0.12 [.005] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 6.60 [.260] 6.32 [.249] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 C 2 2X B 3 14.48 [.570] 12.95 [.510] 3X 3.81 [.150] 13.84 [.545] 13.59 [.535] 1.27 [.050] 1.02 [.040] 0.84 [.033] MAX. 1.14 [.045] 0.89 [.035] 0.36 [.014] 3.81 [.150] B A NOT ES: 1. 2. 3. 4. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. CONTROLLING DIMENSION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA. PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/2007 8 www.irf.com