IRHMS597160 - International Rectifier

Absolute Maximum Ratings

Parameter Units

ID @ VGS = -12V, TC=25°C Continuous Drain Current -45

ID @ VGS = -12V, TC=100°C Continuous Drain Current -28.5

IDM Pulsed Drain Current À-180

PD @ TC = 25°C Max. Power Dissipation 208 W

Linear Derating Factor 1.67 W/°C

VGS Gate-to-Source Voltage ±20 V

EAS Single Pulse Avalanche Energy Á480 mJ

IAR Avalanche Current À-45 A

EAR Repetitive Avalanche Energy À20.8 mJ

dv/dt Peak Diode Recovery dv/dt Â-6.0 V/ns

TJOperating Junction -55 to 150

TSTG Storage Temperature Range

Lead Temperature 300 (0.063in./1.6mm from case for 10s)

Weight 9.3 (Typical) g

Pre-Irradiation

International Rectifier’s R5TM technology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm2)).The combination

of low RDS(on) and low gate charge reduces the power

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of

paralleling and temperature stability of electrical

parameters.

°C

A

RADIATION HARDENED

JANSR2N7550T1

POWER MOSFET 100V, P-CHANNEL

THRU-HOLE (Low-Ohmic TO-254AA) REF: MIL-PRF-19500/713

12/13/07

www.irf.com 1

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on) ID QPL Part Number

IRHMS597160 100K Rads (Si) 0.05Ω -45A JANSR2N7550T1

IRHMS593160 300K Rads (Si) 0.05Ω -45A JANSF2N7550T1

For footnotes refer to the last page

Features:

nSingle Event Effect (SEE) Hardened

nIdentical Pre- and Post-Electrical Test Conditions

nRepetitive Avalanche Ratings

nDynamic dv/dt Ratings

nSimple Drive Requirements

nEase of Paralleling

nHermetically Sealed

nElectically Isolated

nCeramic Eyelets

nLight Weight

nHigh Electrical Conductive Package

Low-Ohmic

TO-254AA



55



IRHMS597160

PD-94283E

IRHMS597160, JANSR2N7550T1 Pre-Irradiation

2www.irf.com

For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units Test Conditions

ISContinuous Source Current (Body Diode) — — -45

ISM Pulse Source Current (Body Diode) À— — -180

VSD Diode Forward Voltage — — -5.0 Tj = 25°C, IS = -45A, VGS = 0V Ã

trr Reverse Recovery Time — — 200 ns Tj = 25°C, IF =-45A, di/dt ≤ -100A/µs

QRR Reverse Recovery Charge — — 1.6 µCV

DD ≤ -50V Ã

ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test Conditions

BVDSS Drain-to-Source Breakdown Voltage -100 — — VGS = 0V, ID = -1.0mA

∆BVDSS/∆TJTemperature Coefficient of Breakdown — -0.13 — Reference to 25°C, ID = -1.0mA

Voltage

RDS(on) Static Drain-to-Source On-State — — 0.05 VGS = -12V, ID = -28.5A

Resistance

VGS(th) Gate Threshold Voltage -2.0 — -4.0 VDS = VGS, ID = -1.0mA

gfs Forward Transconductance 24 — — VDS > -15V, IDS = -28.5A Ã

IDSS Zero Gate Voltage Drain Current — — -10 VDS= -80V ,VGS=0V

— — -25 VDS = -80V,

VGS = 0V, TJ = 125°C

IGSS Gate-to-Source Leakage Forward — — -100 VGS = -20V

IGSS Gate-to-Source Leakage Reverse — — 100 VGS = 20V

QgTotal Gate Charge — — 170 VGS =-12V, ID = -45A

Qgs Gate-to-Source Charge — — 65 VDS = -50V

Qgd Gate-to-Drain (‘Miller’) Charge — — 30

td(on) Turn-On Delay Time — — 35 VDD = -50V, ID = -45A

trRise Time — — 100 VGS =-12V, RG = 1.2Ω

td(off) Turn-Off Delay Time — — 100

tfFall Time — — 100

LS + LDTotal Inductance — 6.8 —

Ciss Input Capacitance — 6110 — VGS = 0V, VDS = -25V

Coss Output Capacitance — 1574 — f = 1.0MHz

Crss Reverse Transfer Capacitance — 115 —

Ã

nH

Note: Corresponding Spice and Saber models are available on International Rectifier Website.

Thermal Resistance

Parameter Min Typ Max Units Test Conditions

RthJC Junction-to-Case — — 0.6

RthCS Case-to-Sink — 0.21 — °C/W

RthJA Junction-to-Ambient — — 48 Typical socket mount

Measured from Drain lead (6mm /0.25in.

from package) to Source lead (6mm /0.25in.

from package) with Source wires internally

bonded from Source Pin to Drain Pad

V/°C

V

Ω

V

S

V

µA

nA

nC

ns

pF

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Pre-Irradiation IRHMS597160, JANSR2N7550T1

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-

ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Radiation Characteristics

Fig a. Single Event Effect, Safe Operating Area

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Table 2. Single Event Effect Safe Operating Area

Ion LET Energy Range VDS (V)

(MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=17.5V

Br 37.9 252.6 33.1 -100 -100 -100 -100 -100

I 59.7 314 30.5 -100 -100 -100 -100 -75

Au 82.3 350 28.4 -100 -100 -100 -30 —

-100

-25

—

@VGS=20V

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ

Parameter 100K Rads(Si)1 300KRads(Si)2

Units

Test Conditions

Min Max Min Max

BVDSS Drain-to-Source Breakdown Voltage -100 — -100 — V VGS = 0V, ID = -1.0mA

VGS(th) Gate Threshold Voltage -2.0 -4.0 -2.0 -5.0 VGS = VDS, ID = -1.0mA

IGSS Gate-to-Source Leakage Forward — -100 — -100 nA VGS =-20V

IGSS Gate-to-Source Leakage Reverse — 100 — 100 VGS = 20 V

IDSS Zero Gate Voltage Drain Current — -10 — -10 µA VDS = -80V, VGS =0V

RDS(on) Static Drain-to-Source Ã — 0.05 — 0.05 Ω VGS = -12V, ID =-28.5A

On-State Resistance (TO-3)

VSD Diode Forward Voltage Ã — -5.0 — -5.0 V VGS = 0V, IS = -45A

1. Part number IRHMS597160 (JANSR2N7550T1)

2. Part number IRHMS593160 (JANSF2N7550T1)

-120

-100

-80

-60

-40

-20

0

0 5 10 15 20

VGS

VDS

Br

I

Au

IRHMS597160, JANSR2N7550T1 Pre-Irradiation

4www.irf.com

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

15

1

10

100

1000

0.1 1 10 100

20µs PULSE WIDTH

T = 25 C

J°

TOP

BOTTOM

VGS

-15V

-12V

-10V

-9.0V

-8.0V

-7.0V

-6.0V

-5.0V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

DS

D

-5.0V

1

10

100

1000

0.1 1 10 100

20µs PULSE WIDTH

T = 150 C

J°

TOP

BOTTOM

VGS

-15V

-12V

-10V

-9.0V

-8.0V

-7.0V

-6.0V

-5.0V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

DS

D

-5.0V

10

100

1000

5.0 5.5 6.0 6.5 7.0

V = -50V

20µs PULSE WIDTH

DS

-V , Gate-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

GS

D

T = 25 C

J°

T = 150 C

J°

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°

V =

I =

GS

D

-12V

-45A

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Pre-Irradiation IRHMS597160, JANSR2N7550T1

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

1 10 100

0

2000

4000

6000

8000

10000

-V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

DS

V

C

=

0V,

C

f = 1MHz

+ C

C SHORTED

GS

iss gs gd , ds

rss gd

oss ds gd

Ciss

Coss

Crss

040 80 120 160 200 240

0

4

8

12

16

20

Q , Total Gate Charge (nC)

-V , Gate-to-Source Voltage (V)

G

GS

FOR TEST CIRCUIT

SEE FIGURE

I =

D

13

-45A

V =-20V

DS

V =-50V

DS

V =-80V

DS

0.1

1

10

100

1000

0.0 1.5 3.0 4.5 6.0

-V ,Source-to-Drain Voltage (V)

-I , Reverse Drain Current (A)

SD

V = 0 V

GS

T = 25 C

J°

T = 150 C

J°

1 10 100 1000

-VDS , Drain-to-Source Voltage (V)

1

10

100

1000

-ID, Drain-to-Source Current (A)

Tc = 25°C

Tj = 150°C

Single Pulse

1ms

10ms

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100µs

IRHMS597160, JANSR2N7550T1 Pre-Irradiation

6www.irf.com

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10a. Switching Time Test Circuit

VDS

VGS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

RD

VGS

VDD

RG

D.U.T.

+

-

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

25 50 75 100 125 150

TC , Case Temperature (°C)

0

10

20

30

40

50

-ID, Drain Current (A)

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

1

Thermal Response ( Z thJC )

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

P

t

DM

1

2

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Pre-Irradiation IRHMS597160, JANSR2N7550T1

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

QG

QGS QGD

VG

Charge

-12 V

D.U.T. VDS

ID

IG

-3mA

VGS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

-12V

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

V

DS

V

DD

DRIVER

A

15V

-20V

tp

V

(

BR

)

DSS

I

AS

VGS

VDD

+

-

25 50 75 100 125 150

0

200

400

600

800

1000

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

J

AS

°

ID

TOP

BOTTOM

-20A

-28.5A

-45A

IRHMS597160, JANSR2N7550T1 Pre-Irradiation

8www.irf.com

Ã Pulse width ≤ 300µs; Duty Cycle ≤ 2%

Ä Total Dose Irradiation with VGS Bias.

-12 volt VGS applied and VDS = 0 during

irradiation per MIL-STD-750, method 1019, condition A.

Å Total Dose Irradiation with VDS Bias.

-80 volt VDS applied and VGS = 0 during

irradiation per MlL-STD-750, method 1019, condition A.

À Repetitive Rating; Pulse width limited by

maximum junction temperature.

Á VDD = -50V, starting TJ = 25°C, L=0.48mH

Peak IL = -45A, VGS = -12V

Â ISD ≤ -45A, di/dt ≤ -365A/µs,

VDD ≤ -100V, TJ ≤ 150°C

Footnotes:

Case Outline and Dimensions — Low-Omic TO-254AA

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 12/2007

3.81 [.150]

0.12 [.005]

1.27 [.050]

1.02 [.040]

6.60 [.260]

6.32 [.249]

C14.48 [.570]

12.95 [.510]

3X

0.36 [.014] B A

1.14 [.045]

0.89 [.035]

2X

3.81 [.150]

20.32 [.800]

20.07 [.790]

13.84 [.545]

13.59 [.535]

3.78 [.149]

3.53 [.139]

17.40 [.685]

16.89 [.665]

A

123

13.84 [.545]

13.59 [.535]

0.84 [.033]

MAX.

B

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

4. CONFORMS TO JEDEC OUTLINE TO-254AA.

3. CONTROLLING DIMENSION: INCH.

NOT E S :

PIN ASSIGNMENTS

1 = DRAIN

2 = SOURCE

3 = GATE

CAUTION

BERYLLIA WARNING PER MIL-PRF-19500

Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them

which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that

will produce fumes containing beryllium.