QPA9119 1/2 W High Linearity Amplifier Applications Repeaters / DAS Mobile Infrastructure Defense Communications General Purpose Wireless 16-Pin 3 x 3 mm Leadless QFN Package Product Features Functional Block Diagram 400-4200 MHz +27.2 dBm P1dB +44 dBm Output IP3 17 dB Gain at 2140 MHz +5 V Single Supply, 130 mA ICQ Internal RF overdrive protection Internal DC overvoltage protection On chip ESD protection 3x3 mm QFN Package Pin 1 Reference Mark NC NC I Ref NC NC 16 15 14 13 12 NC 1 Bias RF In 2 11 RF Out RF In 3 10 RF Out NC 4 9 NC 5 6 7 8 NC NC NC NC Backside Paddle - RF/DC GND Top View General Description Pin Configuration The QPA9119 is a high linearity driver amplifier in a lowcost, RoHS compliant, surface mount package. This InGaP/GaAs HBT delivers high performance across a broad range of frequencies with +44 dBm OIP3 and +27.2 dBm P1dB while only consuming 130 mA quiescent current. All devices are 100% RF and DC tested. The QPA9119 incorporates on-chip features that differentiate it from other products in the market. The amplifier integrates an on-chip DC over-voltage and RF over-drive protection. This protects the amplifier from electrical DC voltage surges and high input RF input power levels that may occur in a system. On-chip ESD protection allows the amplifier to have a very robust Class 1C HBM ESD rating. The QPA9119 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, and high efficiency are required. The device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G / 4G base stations. Advanced Data Sheet: Rev. D 08-20-15 (c) 2015 TriQuint Semiconductor, Inc Pin No. Label 1, 4, 5, 6, 7, 8, 9, 12, 13, 14, 16 2, 3 10, 11 15 Backside Paddle No Connection RF In RF Out I Ref GND Ordering Information Part No. Description QPA9119 QPA9119-PCB900 QPA9119-PCB2140 0.5 W High Linearity Amplifier 869-960 MHz Evaluation Board 2.11-2.17 GHz Evaluation Board Standard T/R size = 2,500 pieces on a 7" reel - 1 of 12 - Disclaimer: Subject to change without notice www.Qorvo.com / www.qorvo.com QPA9119 1/2 W High Linearity Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Parameter Min Typ Device Voltage (VCC) TCASE Tj for >106 hours MTTF +4.75 -40 +5 Rating Storage Temperature -65 to +150 C RF Input Power, CW, 50 , T=25 C +27 dBm Device Voltage (VCC) +8 V Dissipated Power (PDISS) 1.7 W Operation of this device outside the parameter ranges given above may cause permanent damage. Max Units +5.25 +105 +175 V C C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: VCC = VPD = +5.0 V, Temp = +25 C, 50 system. Parameter Operational Frequency Range Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 LTE Channel Power(1) Noise Figure Reference Bias current Quiescent Current, ICQ Total Current Thermal Resistance, jc Notes: 1. Conditions Min Typ 400 Pout = +13 dBm/tone, f = 1 MHz -50 dBc ACLR See Note 1 Pin 15 Pins 10, 11 Max Units 4200 MHz MHz dB dB dB dBm dBm dBm dB mA mA mA C/W 2140 17.1 14 11 +27.2 +43.8 +18.1 4.8 7 130 137 50.3 Junction to case ACLR test set-up: LTE, 20 MHz E-UTRA, +20 MHz offset, PAR = 9.5 dB at 0.01% Probability Advanced Data Sheet: Rev. D 08-20-15 (c) 2015 TriQuint Semiconductor, Inc - 2 of 12 - Disclaimer: Subject to change without notice www.Qorvo.com / www.qorvo.com QPA9119 1/2 W High Linearity Amplifier S-Parameters Test Conditions: VCC=+5 V, ICQ=135 mA (typ.), Temp.=+25 C, unmatched 50 Ohm system, reference plane at device leads Freq (GHz) 0.05 0.10 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.20 2.40 2.60 2.80 3.00 3.20 3.40 3.60 3.80 4.00 4.20 4.40 4.60 4.80 5.00 5.20 5.40 5.60 5.80 6.00 S11 (dB) -6.62 -6.11 -7.34 -0.95 -0.67 -0.81 -0.92 -1.00 -1.06 -1.10 -1.12 -1.13 -1.13 -1.13 -1.12 -1.09 -1.05 -1.03 -1.00 -0.95 -0.91 -0.89 -0.86 -0.82 -0.79 -0.77 -0.76 -0.75 -0.74 -0.74 -0.75 -0.76 S11 (ang) -174.41 -174.19 -152.53 -162.11 -177.80 174.16 168.52 163.75 159.42 155.28 151.20 147.13 142.97 138.79 134.61 130.44 126.28 122.34 118.66 115.17 111.69 109.84 107.48 105.44 103.60 102.20 100.98 100.03 99.00 98.11 97.20 96.42 Advanced Data Sheet: Rev. D 08-20-15 (c) 2015 TriQuint Semiconductor, Inc S21 (dB) 27.28 23.31 17.32 20.48 19.46 17.80 16.25 14.88 13.67 12.59 11.59 10.68 9.83 9.03 8.25 7.50 6.77 6.07 5.38 4.72 4.09 3.55 2.95 2.38 1.84 1.34 0.87 0.44 0.04 -0.33 -0.67 -0.99 S21 (ang) 124.83 125.16 131.27 144.17 120.55 105.64 94.63 85.61 77.74 70.57 63.86 57.49 51.35 45.42 39.65 34.07 28.70 23.53 18.51 13.69 9.01 4.09 -0.05 -3.91 -7.62 -11.12 -14.54 -17.85 -21.17 -24.43 -27.76 -31.12 - 3 of 12 - S12 (dB) -24.82 -36.26 -40.20 -33.75 -32.49 -32.11 -31.86 -31.62 -31.39 -31.16 -30.95 -30.74 -30.56 -30.40 -30.26 -30.15 -30.06 -30.00 -29.95 -29.93 -29.91 -29.84 -29.86 -29.88 -29.91 -29.93 -29.95 -29.97 -29.98 -29.98 -29.96 -29.92 S12 (ang) 87.65 0.46 9.27 33.77 22.94 18.72 16.69 15.38 14.42 13.48 12.50 11.44 10.16 8.87 7.52 5.99 4.49 3.00 1.37 -0.17 -1.72 -3.69 -5.00 -6.15 -7.26 -8.27 -9.25 -10.10 -11.00 -11.73 -12.52 -13.30 S22 (dB) -4.37 -2.80 -2.05 -4.17 -4.88 -4.89 -4.81 -4.73 -4.66 -4.57 -4.48 -4.38 -4.26 -4.15 -4.03 -3.89 -3.75 -3.63 -3.52 -3.38 -3.25 -3.09 -2.99 -2.88 -2.76 -2.68 -2.61 -2.54 -2.47 -2.41 -2.36 -2.32 S22 (ang) -172.48 -159.87 -177.15 166.09 167.74 167.06 164.86 162.09 158.97 155.65 152.21 148.80 145.35 142.00 138.91 136.04 133.19 130.49 128.09 125.84 123.58 118.66 116.78 115.15 113.43 111.71 110.10 108.53 106.94 105.20 103.39 101.42 Disclaimer: Subject to change without notice www.Qorvo.com / www.qorvo.com QPA9119 1/2 W High Linearity Amplifier 869 - 960 MHz Evaluation Board (QPA9119-PCB900) J3 Vcc J5 Vpd J5 C8 J3 R2 C4 R2 J4 GND C4 0 J4 R1 DNI C2 L1 R4 U1 L2 C6 C5 C7 C8 RF Input C7 10 pF R4 C5 2.7 0402 C3 100 pF L1 33 nH DNI J1 1 uF R1 380 C3 15 2,3 C8 J2 Q1 10,11 1,4,5,6,7,8,9, 12,13,14,16 L2 2.2 nH C6 100 pF RF Output 2.7 pF 5.6 pF Notes: 1. See Evaluation Board PCB Information for material and stack up. 2. The recommended component values are dependent upon the frequency of operation. 3. All components are of 0603 size unless stated on the schematic. 4. Critical component placement locations: Distance from U1 (left edge) to R4 (right edge): 25 mils (1.2 deg. at 920 MHz) Distance from U1 (left edge) to C5 (right edge): 360 mils (17 deg. at 920 MHz) Distance from U1 (right edge) to L2 (left edge): 120 mils (5.7 deg. at 920 MHz) Distance from U1 (right edge) to C6 (left edge): 347 mils (16.5 deg. at 920 MHz) Bill of Material QPA9119-PCB900 Reference Des. Value Description Manuf. n/a U1 R2 R4 R1 L2 L1 C7 C6 C2, C8 C4 C5 n/a n/a 0 2.7 380 2.2 nH 33 nH 10 pF 2.7 pF 100 pF 1.0 uF 5.6 pF Printed Circuit Board QPA9119 Amplifier, QFN pkg. Resistor, Chip, 0603 Resistor, Chip, 0402, 1%, 1/16W Resistor, Chip, 0603, 1%, 1/16W Inductor, 0603, +/-0.3 nH Inductor, 0805, 5%, Coilcraft CS Series Cap., Chip, 0603, 5%, 50V. NPO/COG Cap., Chip, 0603, +/-0.1pF. 200V. NPO/COG NPO/COG Cap., Chip, 0603, 5%, 50V, NPO/COG Cap., Chip, 0603, 10%, 10V, X5R Cap., Chip, 0603, +/-0.1pF. 200V. NPO/COG Qorvo Qorvo various various various Toko Coilcraft various various various various various Part Number QPA9119 LL1608-FSL2N2S 0805CS-330XJLB Typical Performance QPA9119-PCB900 Test conditions unless otherwise noted: VCC = VPD = +5V, ICQ = 130 mA , IREF = 7 mA , Temp.=+25 C Parameter Frequency Gain Input Return Loss Output Return Loss Output P1dB OIP3 LTE Channel Power(1) Noise Figure Conditions Pout= +21 dBm/tone, f=1 MHz -50 dBc ACLR Units Typical Value 869 21.1 10 13 +28.0 +43.5 +18.3 6.8 920 21.2 13 12 +28.2 +43.8 +18.7 6.7 960 21.1 17 11 +28.3 +43.5 +18.7 6.7 MHz dB dB dB dBm dBm dBm dB Notes: 1. ACLR Test set-up: LTE, 20 MHz E-UTRA, +20 MHz offset, PAR = 9.5 dB at 0.01% Probability Advanced Data Sheet: Rev. D 08-20-15 (c) 2015 TriQuint Semiconductor, Inc - 4 of 12 - Disclaimer: Subject to change without notice www.Qorvo.com / www.qorvo.com QPA9119 1/2 W High Linearity Amplifier Performance Plots QPA9119-PCB900 Test conditions unless otherwise noted: VCC = VPD = +5V, ICQ = 130 mA , IREF = 7 mA , Temp.=+25 C Gain vs. Frequency 25 Input Return Loss vs. Frequency 0 Output Return Loss vs. Frequency 0 +105C +25C 23 -40C -5 -5 19 +25C |S22| (dB) |S11| (dB) Gain (dB) +105C 21 -40C -10 -15 +105C +25C -40C -10 -15 17 -20 15 860 880 900 920 940 -20 860 960 880 900 OIP3 vs Pout/tone 55 920 940 960 860 880 900 Frequency (MHz) Frequency (MHz) OIP3 vs Pout/tone 55 920 940 960 Frequency (MHz) P1dB vs Frequency 30 Temp.=+25C F = 920 MHz 50 45 40 29 +105C +25C -40C 45 P1dB (dBm) OIP3 (dBm) OIP3 (dBm) 50 40 28 27 +105C +25C -40C 35 35 869 MHz 26 920 MHz 960 MHz 30 30 12 14 16 18 20 22 24 25 10 12 14 16 Pout/tone (dBm) ACLR vs Pout -40 W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW 22 24 870 880 890 900 910 920 930 940 950 960 950 960 28 30 Frequency (MHz) P1dB vs Frequency 30 W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW F = 920 MHz -45 F = 920 MHz 29 +105C ACLR (dBm) ACLR (dBm) 20 ACLR vs Pout -40 Temp.=+25C -45 18 Pout/tone (dBm) -50 -55 P1dB (dBm) 10 +25C -50 -40C -55 28 27 +105C +25C -40C -60 26 -60 869 MHz 920 MHz 960 MHz -65 25 -65 10 12 14 16 18 20 8 10 12 14 Pout (dBm) Signal : LTE 20MHz, PAR = 9.5dB Channel BW E-UTRA, IBW = 18.02MHz 870 20 880 890 ACLR (dBc) -50 -55 910 920 930 350 F = 920 MHz +105C +25C 300 -40C -50 -55 250 200 150 +105C +25C 100 -60 -40C -60 869 MHz 940 Icc vs. Pout 400 Signal : LTE 20MHz, PAR = 9.5dB Channel BW E-UTRA, IBW = 18.02MHz F = 920 MHz -45 900 Frequency (MHz) ACLR vs Pout -40 Temp.=+25C -45 ACLR (dBc) 18 Pout (dBm) ACLR vs Pout -40 16 Icc, Total (mA) 8 50 920 MHz 960 MHz -65 0 -65 8 10 12 14 16 18 Pout (dBm) Advanced Data Sheet: Rev. D 08-20-15 (c) 2015 TriQuint Semiconductor, Inc 20 8 10 12 14 Pout (dBm) - 5 of 12 - 16 18 20 12 14 16 18 20 22 24 26 Pout (dBm) Disclaimer: Subject to change without notice www.Qorvo.com / www.qorvo.com QPA9119 1/2 W High Linearity Amplifier 2110 - 2140 MHz Evaluation Board (QPA9119-PCB2140) J3 Vcc J5 Vpd J5 C8 J3 R2 J4 R4 U1 C6 C7 C5 R3 C2 C8 RF Input C7 1.5 pF Notes: 1. See Evaluation Board PCB Information for material and stack up. 2. The recommended component values are dependent upon the frequency of operation. 3. All components are of 0603 size unless stated on the schematic. 4. Critical component placement locations: Distance from U1 (left edge) to R4 (right edge): 32 mils (3.6 deg. at 2140 MHz) Distance from U1 (left edge) to C5 (right edge): 70 mils (7.8 deg. at 2140 MHz) Distance from U1 (left edge) to C7 (right edge): 152 mils (16.8 deg. at 2140 MHz) Distance from U1 (right edge) to C8 (left edge): 380 mils (42.0 deg. at 2140 MHz) Distance from U1 (right edge) to C6 (left edge): 305 mils (33.7 deg. at 2140 MHz) 15 R4 C5 2,3 1.5 0402 C3 100 pF L1 18 nH C8 DNI J1 1 uF R1 380 L1 R1 0 DNI C4 C3 C4 R2 J2 Q1 10,11 1,4,5,6,7,8,9, 12,13,14,16 1.8 pF C6 RF Output 3.3 pF 0.8 pF J4 GND Bill of Material QPA9119-PCB2140 Reference Des. Value Description Manuf. n/a U1 R2 R4 R1 C3 L1 C7 C6 C8 C4 C5 n/a n/a 0 1.5 380 100 pF 18 nH 1.5 pF 0.8 pF 3.3 pF 1.0 uF 1.8 pF Printed Circuit Board QPA9119 Amplifier, QFN pkg. Resistor, Chip, 0603 Resistor, Chip, 0402, 1%, 1/16W Resistor, Chip, 0603, 1%, 1/16W Cap., Chip, 0603, 5%, 50V, NPO/COG Inductor, 0805, 5%, Coilcraft CS Series Cap., Chip, 0603, +/-0.1pF. 200V. NPO/COG 5%, 50V. NPO/COG Cap., Chip, 0603, +/-0.1pF. 200V. NPO/COG NPO/COG Cap., Chip, 0603, +/-0.1pF. 200V. NPO/COG Cap., Chip, 0603, 10%, 10V, X5R Cap., Chip, 0603, +/-0.1pF. 200V. NPO/COG Qorvo Qorvo various various various various Coilcraft various various various various various Part Number QPA9119 0805CS-180XJLB Typical Performance QPA9119-PCB2140 Test conditions unless otherwise noted: VCC = VPD = +5V, ICQ = 130 mA , IREF = 7 mA , Temp.=+25 C Parameter Frequency Gain Input Return Loss Output Return Loss Output P1dB OIP3 LTE Channel Power(1) Noise Figure Conditions Pout= +13 dBm/tone, f=1 MHz -50 dBc ACLR Units Typical Value 2110 17.1 13 12 +27.4 +43.5 +18.2 4.8 2140 17.1 14 11 +27.2 +43.8 +18.1 4.8 2170 17.0 14 11 +27.1 +43.6 +18.4 4.8 MHz dB dB dB dBm dBm dBm dB Notes: 1. ACLR Test set-up: LTE, 1-CH E-UTRA, +20 MHz offset, PAR = 9.5 dB at 0.01% Probability Advanced Data Sheet: Rev. D 08-20-15 (c) 2015 TriQuint Semiconductor, Inc - 6 of 12 - Disclaimer: Subject to change without notice www.Qorvo.com / www.qorvo.com QPA9119 1/2 W High Linearity Amplifier Performance Plots QPA9119-PCB2140 Test conditions unless otherwise noted: VCC = VPD = +5V, ICQ = 130 mA , IREF = 7 mA , Temp.=+25 C Gain vs. Frequency 19 Input Return Loss vs. Frequency 0 Output Return Loss vs. Frequency 0 +105C +25C -40C 18 -5 -5 +105C +25C -40C 16 +25C |S22| (dB) |S11| (dB) Gain (dB) +105C 17 -40C -10 -15 -10 -15 15 14 2110 2120 2130 2140 2150 2160 -20 2110 2170 2120 2130 OIP3 vs Pout/tone 50 2140 2150 2160 -20 2110 2170 2120 2130 Frequency (MHz) Frequency (MHz) OIP3 vs Pout/tone 50 2140 2150 2160 2170 2160 2170 Frequency (MHz) P1dB vs Frequency 30 Temp.=+25C 29 40 35 30 P1dB (dBm) 45 OIP3 (dBm) OIP3 (dBm) 45 40 +105C +25C 35 -40C -40C 28 27 26 30 2110 MHz +105C +25C F = 2140 MHz 2140 MHz 2170 MHz 25 16 19 22 10 13 16 ACLR vs Pout -40 22 ACLR (dBc) -55 -60 2110 MHz 2140 MHz 2170 MHz 12 14 16 18 -40C -55 20 +105C 18 +25C 16 -40C 12 -65 20 10 8 10 12 14 16 18 20 -5 -3 -1 1 3 Pout (dBm) ACLR vs Pout Signal : LTE 20MHz, PAR = 9.5dB Channel BW E-UTRA, IBW = 18.02MHz 22 14 Pout (dBm) -40 F = 2140 MHz 24 -60 -65 2150 Pout vs. Pin 26 +25C -50 2140 28 +105C -50 10 2130 30 W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW F = 2140 MHz -45 W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW 8 2120 Frequency (MHz) ACLR vs Pout -40 Temp.=+25C -45 19 Pout/tone (dBm) Pout (dBm) 13 Pout/tone (dBm) ACLR (dBc) 25 2110 25 10 ACLR vs Pout -40 Temp.=+25C -45 7 9 11 13 15 28 30 Icc vs. Pout 400 Signal : LTE 20MHz, PAR = 9.5dB Channel BW E-UTRA, IBW = 18.02MHz F = 2140 MHz -45 5 Pin (dBm) 350 F = 2140 MHz -50 -55 Icc, Total (mA) ACLR (dBc) ACLR (dBc) 300 +105C +25C -50 -40C -55 250 200 150 +105C 100 -60 +25C -60 2110 MHz -40C 50 2140 MHz 2170 MHz -65 0 -65 8 10 12 14 16 18 Pout (dBm) Advanced Data Sheet: Rev. D 08-20-15 (c) 2015 TriQuint Semiconductor, Inc 20 8 10 12 14 Pout (dBm) - 7 of 12 - 16 18 20 12 14 16 18 20 22 24 26 Pout (dBm) Disclaimer: Subject to change without notice www.Qorvo.com / www.qorvo.com QPA9119 1/2 W High Linearity Amplifier 2300 - 2700 MHz Reference Design J3 Vcc J5 Vpd J5 C8 J3 R2 C4 R2 C4 J4 0 R1 DNI C2 C3 R3 C7 R4 U1 22 pF C6 J1 C5 L1 C3 1 uF R1 380 C8 J2 L1 18 nH DNI J1 RF Input C7 1.2 pF 15 R4 C5 2,3 2.2 0402 1.2 pF C8 J2 Q1 10,11 1,4,5,6,7,8,9, 12,13,14,16 C6 RF Output 39 pF 0.8 pF J4 GND Notes: 1. All components are of 0603 size unless stated on the schematic. 2. The recommended component values are dependent upon the frequency of operation. 3. Critical component placement locations: Distance between U1 (left edge) to R4 (right edge): 15 mil Distance between U1 (left edge) to C5 (right edge): 80 mil Distance between U1 (left edge) to C7 (right edge): 130 mil Distance between U1 (right edge) to C6 (left edge): 130 mil Bill of Material 2300 - 2700 MHz Reference Design Reference Des. Value Description Manuf. n/a n/a Printed Circuit Board Qorvo U1 n/a 0.5 W High Linearity Amplifier Qorvo R1 380 Res., Chip, 0603, +/-1%, 1/10W various R2, R3 0 Res., Chip, 0603 various C5, C7 1.2 pF CAP, 0603, +/-0.1pF. 200V. NPO/COG various C6 0.8 pF various C8 39 pF CAP, 0603, +/-0.1pF. 200V. NPO/COG Cap., Chip, 0603, +/-5%. 50V NPO/COG C3 22 pF Cap., Chip, 0603, +/-5%. 50V NPO/COG various R4 2.2 Res., Chip, 0603, +/-1%, 1/10W various C4 1.0 uF CAP, 0603, 10%, X5R , 10V various L1 18 nH Inductor, 0805, 5%, Coilcraft CS series Coilcraft Advanced Data Sheet: Rev. D 08-20-15 (c) 2015 TriQuint Semiconductor, Inc - 8 of 12 - Part Number QPA9119 various 0805CS-180XJLB Disclaimer: Subject to change without notice www.Qorvo.com / www.qorvo.com QPA9119 1/2 W High Linearity Amplifier Typical Performance 2300 - 2700 MHz Reference Design Test Conditions: VCC = VPD = +5V, ICQ = 130 mA , IREF = 7 mA , Temp.=+25 C Parameter Conditions Typical Value Units Frequency 2300 2400 2500 2600 2700 MHz Gain 14.1 14.3 14.3 14.1 13.7 dB Input Return Loss 7.6 10 13 13 11 dB Output Return Loss 9.1 8.8 8.6 8.3 8.2 dB +27.3 +27.6 +27.6 +27.3 +27.1 dBm +46.1 +44.5 +44.1 +44.5 +44.9 dBm Output P1dB Pout= +15 dBm/tone, f= 1 MHz Output IP3 Quiescent Collector Current, ICQ 130 mA Performance Plots 2300 - 2700 MHz Reference Design Test Conditions: VCC = VPD = +5V, ICQ = 130 mA , IREF = 7 mA , Temp.=+25 C 16 Gain vs. Frequency Input Return Loss vs. Frequency 0 Temp.=+25C Output Return Loss vs. Frequency 0 Temp.=+25C Temp.=+25C 15 |S22| (dB) -5 |S11| (dB) Gain (dB) -5 14 13 -10 -10 12 11 2300 2400 2500 2600 -15 2300 2700 2400 Frequency (MHz) 2500 2600 -15 2300 2700 2400 Frequency (MHz) OIP3 vs. Pout/tone 50 2500 2600 2700 Frequency (MHz) P1dB vs. Frequency 29 TQP7M9102 Temp.=+25C Temp.=+25C 45 P1dB (dBm) OIP3 (dBm) 28 F = 2.3 GHz 40 27 26 F = 2.4 GHz F = 2.5 GHz 25 F = 2.6 GHz F = 2.7 GHz 24 35 9 10 11 12 13 14 15 16 17 18 19 2.3 Advanced Data Sheet: Rev. D 08-20-15 (c) 2015 TriQuint Semiconductor, Inc 2.4 2.5 2.6 2.7 Frequency (GHz) Pout/Tone (dBm) - 9 of 12 - Disclaimer: Subject to change without notice www.Qorvo.com / www.qorvo.com QPA9119 1/2 W High Linearity Amplifier Pin Configuration and Description Pin 1 Reference Mark NC NC I Ref NC NC 16 15 14 13 12 NC 1 Bias RF In 2 11 RF Out RF In 3 10 RF Out NC 4 9 NC 5 6 7 8 NC NC NC NC Backside Paddle - RF/DC GND Top View Pin No. Label 1, 4, 5, 6, 7, 8, 9, 12, 13, 14, 16 NC 2, 3 RF IN 10, 11 15 RF OUT / VCC I REF Backside Paddle GND Description No electrical connection. Land pads should be provided for PCB mounting integrity. RF input. External DC Block required. Requires conjugate match for optimal performance. RF output. External DC Block and bias voltage required. Requires matching. Sets the bias current for the amp. Also can be used to power down device. RF/DC ground. Use recommended via pattern to minimize inductance and thermal resistance. See PCB Mounting Pattern for suggested footprint. Evaluation Board PCB Information PC Board Layout PCB Material (stackup): 1 oz. Cu top layer 0.014 inch Nelco N-4000-13, r=3.7 1 oz. Cu MIDDLE layer 1 Core Nelco N-4000-13 1 oz. Cu middle layer 2 0.014 inch Nelco N-4000-13 1 oz. Cu bottom layer Finished board thickness is 0.062.006 50 ohm line dimensions: width = .029", spacing = .029". The pad pattern shown has been developed and tested for optimized assembly at Qorvo Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from supplier to supplier, careful process development is recommended. Advanced Data Sheet: Rev. D 08-20-15 (c) 2015 TriQuint Semiconductor, Inc - 10 of 12 - Disclaimer: Subject to change without notice www.Qorvo.com / www.qorvo.com QPA9119 1/2 W High Linearity Amplifier Package Marking and Dimensions Marking: Part number - 9119 Date - YYWW Lot code - AaXXXX 9119 YYWW AaXXXX Notes: 1. All dimensions are in millimeters. Angles are in degrees. 2. The terminal #1 identifier and terminal numbering conform to JESD 95-1 SPP-012. 3. Contact plating: NiPdAu PCB Mounting Pattern 1.50 Pin 1 Locator Package Outline 0.31 7X 3 0.32 0.09 16X 0.52 0.64 1.50 16X 0.32 0.50 Pitch 16X 0.55 COMPONENT SIDE NOTES: 1. All dimensions are in millimeters. Angles are in degrees. 2. Use 1 oz. copper minimum for top and bottom layer metal. 3. Vias are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation. We recommend a 0.35mm (#80/.0135") diameter bit for drilling via holes and a final plated thru diameter of 0.25 mm (0.10"). 4. Ensure good package backside paddle solder attach for reliable operation and best electrical performance. Advanced Data Sheet: Rev. D 08-20-15 (c) 2015 TriQuint Semiconductor, Inc - 11 of 12 - Disclaimer: Subject to change without notice www.Qorvo.com / www.qorvo.com QPA9119 1/2 W High Linearity Amplifier Product Compliance Information ESD Sensitivity Ratings Solderability Compatible with both lead-free (260 C max. reflow temperature) and tin/lead (245 C max. reflow temperature) soldering processes. Caution! ESD-Sensitive Device Contact plating: NiPdAu ESD Class: Volt. Range: Test: Standard: Class 1C >1000V to <2000V Human Body Model (HBM) ESAD/JEDEC Standard JS-001-2012 ESD Class: Volt. Range: Test: Standard: Class C3 1000 V Charged Device Model (CDM) JEDEC Standard JESD22-C101F RoHs Compliance This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). MSL Rating MSL Rating: Level 1 Test: 260C convection reflow Standard: JEDEC Standard IPC/JEDEC J-STD-020 This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Web: www.triquint.com Email: customer.support@qorvo.com Tel: 1-844-890-8163 For information about the merger of RFMD and Qorvo as Qorvo: Web: www.qorvo.com Important Notice The information contained herein is believed to be reliable. Qorvo makes no warranties regarding the information contained herein. Qorvo assumes no responsibility or liability whatsoever for any of the information contained herein. Qorvo assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Advanced Data Sheet: Rev. D 08-20-15 (c) 2015 TriQuint Semiconductor, Inc - 12 of 12 - Disclaimer: Subject to change without notice www.Qorvo.com / www.qorvo.com DAT.QPA9119 Rev. D QPA9119 Product Data Sheet Page 1 of 1 Revision History Rev. Date ECN# (Hillsboro Only) WEBMASTER POSTING INSTRUCTIONS TO PUBLIC WEBSITE Description of Change Email* Info Full Link 1st page Data Only only Sheet Answer YES in one column only OR NO** all 3 columns A 05-08-15 92909 Initial Release (S. Paniccia) No No No B 05-12-15 92970 Added application circuit (S. Paniccia) No No No C 08-12-15 95204 Added reference designs, plots, thermal, ESD info (S. Paniccia) No No Yes D 08-20-15 95446 Added de-embedded data (S. Paniccia) No No Yes CONTROLLED DISTRIBUTION: 03 (Hillsboro Only) Printed copy of this document is considered an uncontrolled copy; unless control copy designator is identified. Qorvo, Inc. - Confidential & Proprietary Information Template: FOR-QPA9119 Rev B