Vishay Siliconix
DG201B, DG202B
Document Number: 70037
S11-0800-Rev. J, 25-Apr-11
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Improved Quad CMOS Analog Switches
FEATURES
± 22 V supply voltage rating
TTL and CMOS compatible logic
Low on-resistance - RDS(on): 45
Low leakage - ID(on): 20 pA
Single supply operation possible
Extended temperature range
Fast switching - tON: 120 ns
Low glitching - Q: 1 pC
Compliant to RoHS Directive 2002/95/EC
BENEFITS
Wide analog signal range
Simple logic interface
Higher accuracy
Minimum transients
Reduced power consumption
Superior to DG201A, DG202
Space savings (TSSOP)
APPLICATIONS
Industrial instrumentation
Test equipment
Communications systems
Disk drives
Computer peripherals
Portable instruments
Sample-and-hold circuits
DESCRIPTION
The DG201B, DG202B analog switches are highly improved
versions of the industry-standard DG201A, DG202. These
devices are fabricated in Vishay Siliconix’ proprietary silicon
gate CMOS process, resulting in lower on-resistance, lower
leakage, higher speed, and lower power consumption.
These quad single-pole single-throw switches are designed
for a wide variety of applications in telecommunications,
instrumentation, process control, computer peripherals, etc.
An improved charge injection compensation design
minimizes switching transients. The DG201B and DG202B
can handle up to ± 22 V input signals, and have an improved
continuous current rating of 30 mA. An epitaxial layer
prevents latchup.
All devices feature true bi-directional performance in the on
condition, and will block signals to the supply voltages in the
off condition.
The DG201B is a normally closed switch and the DG202B is
a normally open switch. (see Truth Table.)
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Logic “0” 0.8 V
Logic “1” 2.4 V
* Pb containing terminations are not RoHS compliant, exemptions may apply
IN1IN2
D1D2
S1S2
V- V+
GND NC
S4S3
D4D3
IN4IN3
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Top View
DG201B
Dual-In-Line, SOIC and TSSOP
TRUTH TABLE
Logic DG201B DG202B
0 ON OFF
1OFFON
Available
Pb-free
RoHS*
COMPLIANT
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Document Number: 70037
S11-0800-Rev. J, 25-Apr-11
Vishay Siliconix
DG201B, DG202B
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6.5 mW/°C above 75 °C.
d. Derate 7.6 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
f. Derate 10 mW/°C above 75 °C.
ORDERING INFORMATION
Temp. Range Package Part Number
- 55 °C to 125 °C 16-pin CerDIP DG201BAK
DG202BAK
- 40 °C to 85 °C
16-pin Plastic DIP
DG201BDJ
DG201BDJ-E3
DG202BDJ
DG202BDJ-E3
16-pin narrow SOIC
DG201BDY
DG201BDY-E3
DG201BDY-T1
DG201BDY-T1-E3
DG202BDY
DG202BDY-E3
DG202BDY-T1
DG202BDY-T1-E3
16-pin TSSOP
DG201BDQ
DG201BDQ-E3
DG201BDQ-T1
DG201BDQ-T1-E3
DG202BDQ
DG202BDQ-E3
DG202BDQ-T1
DG202BDQ-T1-E3
ABSOLUTE MAXIMUM RATINGS
Parameter Limit Unit
Voltages Referenced, V+ to V- 44
V
GND 25
Digital Inputsa, VS, VD
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
Current (Any terminal) 30 mA
Peak Current S or D (Pulsed at 1 ms, 10 % duty cycle max.) 100
Storage Temperature (AK, DK suffix) - 65 to 150 °C
(DJ, DY, DQ suffix) - 65 to 125
Power Dissipation (Package)b
16-pin plastic DIPc470
mW
16-pin narrow SOIC and TSSOPd640
16-pin CerDIPe900
LCC-20f750
Document Number: 70037
S11-0800-Rev. J, 25-Apr-11
www.vishay.com
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Vishay Siliconix
DG201B, DG202B
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SCHEMATIC DIAGRAM (typical channel)
Figure 1.
SPECIFICATIONSa
Parameter Symbol
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
VIN = 2.4 V, 0.8 VfTemp.b Typ.c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit Min.d Max.dMin.d Max.d
Analog Switch
Analog Signal RangeeVANALOG Full - 15 15 - 15 15 V
Drain-Source
On-Resistance RDS(on) VD = ± 10 V, IS = 1 mA
Room
Full
45 85
100
85
100
RDS(on) Match RDS(on Room 2
Source Off Leakage
Current IS(off) VS = ± 14 V, VD = ± 14 V Room
Full
± 0.01 - 0.5
- 20
0.5
20
- 0.5
- 5
0.5
5
nA
Drain Off Leakage
Current ID(off) VD = ± 14 V, VS = ± 14 V Room
Full
± 0.01 - 0.5
- 20
0.5
20
- 0.5
- 5
0.5
5
Drain On Leakage
Current ID(on) VS = VD = ± 14 V Room
Full
± 0.02 - 0.5
- 40
0.5
40
- 0.5
- 10
0.5
10
Digital Control
Input Voltage High VINH Full 2.4 2.4 V
Input Voltage Low VINL Full 0.8 0.8
Input Current IINH or IINL VINH or VINL Full - 11- 11µA
Input Capacitance CIN Room 5 pF
Dynamic Characteristics
Tu r n - O n T ime t ON VS = 2 V
see switching time test circuit
Room
Full
120 300 300
ns
Turn-Off Time tOFF
Room
Full
65 200 200
Charge Injection Q CL = 1000 pF, Vg = 0 V
Rg = 0 Room 1 pC
Source-Off Capacitance CS(off) VS = 0 V, f = 1 MHz Room 5
pFDrain-Off Capacitance CD(off) Room 5
Channel On Capacitance CD(on) VD = VS = 0 V, f = 1 MHz Room 16
Off Isolation OIRR CL = 15 pF, RL = 50
VS = 1 VRMS, f = 100 kHz
Room 90
dB
Channel-to-Channel
Crosstalk XTALK Room 95
Power Supply
Positive Supply Current I+
VIN = 0 or 5 V
Room
Full
50
100
50
100 µA
Negative Supply Current I- Room
Full
- 1
- 5
- 1
- 5
Power Supply Range for
Continuous Operation VOP Full ± 4.5 ± 22 ± 4.5 ± 22 V
D
X
S
X
V+
IN
X
V-
Level
Shift/
GND
V+
V-
5 V
Reg
Drive
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Document Number: 70037
S11-0800-Rev. J, 25-Apr-11
Vishay Siliconix
DG201B, DG202B
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (for Single Supply)a
Parameter Symbol
Test Conditions
Unless Specified
V+ = 12 V, V- = 0 V
VIN = 2.4 V, 0.8 VfTemp.b Typ.c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit Min.d Max.dMin.d Max.d
Analog Switch
Analog Signal RangeeVANALOG Full 0 12 0 12 V
Drain-Source
On-Resistance RDS(on) VD = 3 V, 8 V, I S = 1 mA Room
Full
90 160
200
160
200
Dynamic Characteristics
Tur n -On T i m e tON VS = 8 V
see switching time test circuit
Room 120 300 300 ns
Tur n -Of f T i m e tOFF Room 60 200 200
Charge Injection Q CL = 1 nF, Vgen = 6 V
Rgen = 0 Room 4 pC
Power Supply
Positive Supply Current I+
VIN = 0 or 5 V
Room
Full
50
100
50
100 µA
Negative Supply Current I- Room
Full
- 1
- 5
- 1
- 5
Power Supply Range for
Continuous Operation VOP Full + 4.5 + 25 + 4.5 + 25 V
Document Number: 70037
S11-0800-Rev. J, 25-Apr-11
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Vishay Siliconix
DG201B, DG202B
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
RDS(on) vs. VD and Power Supply Voltages
RDS(on) vs. VD and Single Power Supply Voltages
Leakage Currents vs. Analog Voltage
- 20 - 16 - 12 - 8 - 4 0 4 8 12 16 20
40
50
60
70
80
90
100
110
RDS(on) (Ω)
± 5 V
VD - Drain Voltage (V)
± 10 V
± 15 V
± 20 V
30
20
10
02468 1 0 1 2 1 4 16
0
25
50
75
100
125
150
175
200
225
RDS(on) (Ω)
V
D
- Drain Voltage (V)
V+ = 5 V
7 V
10 V
12 V
15 V
250
I
S( of f)
, I
D(of f)
I
D(on)
- 20 - 15 - 10 - 5 0 5 10 15 20
80
60
40
20
0
- 20
- 40
- 60
- 80
Temperature (°C)
IS, ID- Current (pA)
V+ = 22 V
V- = - 22 V
T
A
= 25 °C
RDS(on) vs. VD and Temperature
Input Switching Threshold vs. Supply Voltage
Leakage Currents vs. Temperature
0
10
20
30
40
50
- 15 - 10 - 5 0 5 10 15
R
DS(on)
(Ω)
V
D
- Drain Voltage (V)
125 °C
85 °C
25 °C
- 55 °C
V+ = 15 V
V- = - 15 V
60
70
80
90
100
0
0.5
1
1.5
2
2.5
V
TH (V)
4 6 8 1 0 1 21 4 1 61 8 20
V+ Positive Supply (V)
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Document Number: 70037
S11-0800-Rev. J, 25-Apr-11
Vishay Siliconix
DG201B, DG202B
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Switching Time vs. Single Supply Voltage
QS, QD - Charge Injection vs. Analog Voltage
0
2 4 6 8 1 01 2 1 41 6 1 820
100
200
300
400
500
V- = 0 V
t
on
t
of f
Switching T ime (ns)
V+ - Positive Supply (V)
- 15 - 10 - 5 0 5 10 15
30
20
10
0
- 10
- 20
- 30
V+ = 15 V
V- = - 15 V
V+ = 12 V
V- = 0 V
Q - Charge (pC)
V
ANALO G
- Analog Voltage (V)
Switching Time vs. Power Supply Voltage
Off Isolation vs. Frequency
0
100
200
300
400
ton
toff
Switching Time (ns)
0 ± 4 ± 8 ± 12 ± 16 ± 20
V+, V- Positive and Negative Supplies (V)
10K 100K 1M 10M
40
50
60
70
80
90
100
110
120
OIRR (dB)
V+ = 15 V
V- = - 15 V
R
L
= 50 Ω
f - Frequency (Hz)
Supply Current vs. Switching Frequency
1K 10K 100K 1M
4
3
2
1
0
I+ - Supply Current (mA)
f - Frequency (Hz)
Document Number: 70037
S11-0800-Rev. J, 25-Apr-11
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Vishay Siliconix
DG201B, DG202B
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEST CIRCUITS
Figure 2. Switching Time
50 %
0 V
3 V
t
OFF
t
ON
V
O
t
r
< 20 ns
t
f
< 20 ns
Logic
Input
Switch
Output
90 %
C
L
35 pF
R
L
1 kΩ
V
O
= V
S R
L
+ RDS(on)
R
L
V
S
= + 2 V V
O
V-
V+
IN
S D
3 V
- 15 V
GND
+ 15 V
Figure 3. Off Isolation
S
IN R
L
D
R
g
= 50 Ω
V
S
V
O
0 V, 2.4 V
Off Isolation = 20 log
V
S
V
O
V+
- 15 V
GND V- C
C
+ 15 V
Figure 4. Channel-to-Channel Crosstalk
IN
1
V
O
+ 15 V
- 15 V
GND
R
L
V+
V-
NC
X
TALK Isolation = 20 log
C
V
S
C
V
O
0 V, 2.4 V
50 Ω
V
S S
1
IN
2
S
2
R
g
= 50 Ω
D
1
D
2
C = RF bypass
0 V, 2.4 V
Figure 5. Charge Injection
CL
1000 pF
Vg
3 V
D
V+
V-
Rg
- 15 V
GND
IN
SVO
+ 15 V
VO
ΔVO
INXON ONOFF
ΔVO = measured voltage error due to charge injection
The charge injection in coulombs is Q = CL x Δ V O
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Document Number: 70037
S11-0800-Rev. J, 25-Apr-11
Vishay Siliconix
DG201B, DG202B
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
APPLICATIONS
Figure 6. Sample-and-Hold
LM101A
+ 15 V
- 15 V
30 pF
+ 15 V
- 15 V
V+
V- DG201B
50 pF
1000 pF
J202
J500
J507
+ 15 V
2N4400
- 15 V
V
IN
V
OUT
1 kΩ
200 Ω
5 MΩ
5.1 MΩ
Aquisition T ime = 25 µs
Aperature T ime = 1 µs
Sample to Hold Of fset = 5 mV
Droop Rate = 5 mV/s
Logic Input
Low = Sample
High = Hold
-
+
Figure 7. Active Low Pass Filter with Digitally Selected Break Frequency
TTL
Control
150 pF
1500 pF
+ 15 V
DG201B GND
30 pF
LM101A
+ 15 V
- 15 V
1 10 100 1K 10K 100K 1M
- 40
0
160
120
80
V oltage Gain - dB
f
C4
Select
f
C3
Select
f
C2
Select
f
C1
Select
R
1
= 10 kΩ
R
2
= 10 kΩ
R
3
= 1 MΩ
V
OUT
V
1
V-
C4
C3
C
2
C
1
A
L
(V oltage Gain Below Break Frequency) = = 100 (40 dB)
R
3
R
1
f
C
(Break Frequency) =
1
2πR
3
C
X
1
2πR
1
C
X
f
L
(Unity Gain Frequency) =
Max. Attenuation =
RDS(on)
10 kΩ
- 47 dB
0.015 µF
0.15 µF
- 15 V
-
+
40
f - Frequency (Hz)
f
L1 f
L2 f
L3 f
L4
f
C1 f
C2 f
C3 f
C4
Document Number: 70037
S11-0800-Rev. J, 25-Apr-11
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9
Vishay Siliconix
DG201B, DG202B
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
APPLICATIONS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70037.
Figure 8. A Precision Amplifier with Digitally Programable Input and Gains
Gain =
Gain 1 (x1)
Gain 2 (x10)
Gain 3 (x100)
Gain 4 (x1000)
+ 15
V
- 15 V
GND
DG419
30 pF
+ 15 V
+ 15 V
- 15 V DG202B
Logic High = Switch On
+
-
LM101A
R
F
+ R
G
R
G
V
IN1
V
IN2
CH
R
F1
18 k Ω
R
F1
9.9 k Ω
R
F1
100 k Ω
R
G3
100 Ω
R
G2
100 Ω
R
G1
2 k Ω
V +
V-
GND V-
+ 5 V
V
L
All Leads
0.101 mm
0.004 IN
E
HC
D
e B A1 LĬ
4312 8756
131416 15 91012 11
Package Information
Vishay Siliconix
Document Number: 71194
02-Jul-01 www.vishay.com
1
SOIC (NARROW): 16ĆLEAD
JEDEC Part Number: MS-012
MILLIMETERS INCHES
Dim Min Max Min Max
A1.35 1.75 0.053 0.069
A10.10 0.20 0.004 0.008
B0.38 0.51 0.015 0.020
C0.18 0.23 0.007 0.009
D9.80 10.00 0.385 0.393
E3.80 4.00 0.149 0.157
e1.27 BS C 0.050 BSC
H5.80 6.20 0.228 0.244
L0.50 0.93 0.020 0.037
Ĭ0_8_0_8_
ECN: S-03946—Rev. F, 09-Jul-01
DWG: 5300
E1E
Q1
A
L
A1
e1B
B1
S
CeA
D
15°
MAX
12345678
16 15 14 13 12 11 10 9
Package Information
Vishay Siliconix
Document Number: 71261
06-Jul-01 www.vishay.com
1
PDIP: 16ĆLEAD
MILLIMETERS INCHES
Dim Min Max Min Max
A3.81 5.08 0.150 0.200
A10.38 1.27 0.015 0.050
B0.38 0.51 0.015 0.020
B10.89 1.65 0.035 0.065
C0.20 0.30 0.008 0.012
D18.93 21.33 0.745 0.840
E7.62 8.26 0.300 0.325
E15.59 7.11 0.220 0.280
e12.29 2.79 0.090 0.110
eA7.37 7.87 0.290 0.310
L2.79 3.81 0.110 0.150
Q11.27 2.03 0.050 0.080
S0.38 1.52 .015 0.060
ECN: S-03946—Rev. D, 09-Jul-01
DWG: 5482
Vishay Siliconix
Package Information
Document Number: 74417
23-Oct-06
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1
Symbols
DIMENSIONS IN MILLIMETERS
Min Nom Max
A - 1.10 1.20
A1 0.05 0.10 0.15
A2 - 1.00 1.05
B 0.22 0.28 0.38
C - 0.127 -
D 4.90 5.00 5.10
E 6.10 6.40 6.70
E1 4.30 4.40 4.50
e-0.65-
L 0.50 0.60 0.70
L1 0.90 1.00 1.10
y--0.10
θ10°3°6°
ECN: S-61920-Rev. D, 23-Oct-06
DWG: 5624
TSSOP: 16-LEAD
PAD Pattern
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Revision: 02-Sep-11 1Document Number: 63550
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RECOMMENDED MINIMUM PAD FOR TSSOP-16
0.281
(7.15)
Recommended Minimum Pads
Dimensions in inches (mm)
0.171
(4.35)
0.055
(1.40)
0.012
(0.30)
0.026
(0.65)
0.014
(0.35)
0.193
(4.90)
Application Note 826
Vishay Siliconix
www.vishay.com Document Number: 72608
24 Revision: 21-Jan-08
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SO-16
RECOMMENDED MINIMUM PADS FOR SO-16
0.246
(6.248)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.152
(3.861)
0.047
(1.194)
0.028
(0.711)
0.050
(1.270)
0.022
(0.559)
0.372
(9.449)
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Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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