©2004 Fairchild Semiconductor Corporation BAS16HT1G, Rev. A
BAS16HT1G
Small Signal Diode
Absolute Maximum Ratings *
T
A
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Charac t eris tics
Electrical Characteristics
T
A
=25°C unless otherwise noted
Symbol Parameter Value Units
V
RRM
Maximum Repetitive Reverse Voltage 85 V
I
F(AV)
Average Rectified Forward Current 200 mA
I
FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second 600 mA
T
STG
Storage Temperature Range -65 to +150 °C
T
J
Operating Junction Temperature -55 to +150 °C
Symbol Parameter Value Units
P
D
Power Dissipation 200 mW
R
θJA
Thermal Resistance, Junction to Ambient 600 °C/W
Symbol Parameter Test Conditions Min. Max. Units
V
R
Breakdown Voltage I
R
= 5.0µA85V
V
F
Forward Voltage I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
715
855
1.0
1.25
mV
mV
V
V
I
R
Reverse Leakage V
R
= 75V
V
R
= 25V, T
A
= 150°C
V
R
= 75V, T
A
= 150°C
1.0
30
50
µA
µA
µA
C
T
Total Capacita nce V
R
= 0, f = 1.0MHz 2.0 pF
t
rr
Reverse Recovery Time I
F
= I
R
= 10mA, I
RR
= 1.0mA,
R
L
= 100Ω6.0 ns
BAS16HT1G
Connection Diagram
2
1
1
2
A1
SOD-323
©2004 Fairchild Semiconductor Corporation BAS16HT1G, Rev. A
BAS16HT1G
Typical Characteristics
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100µAFigure 2. Reverse Current vs Reverse Voltage
IR - 10 to 100V
Figure 3. Forward Voltage vs Forward Current
VF - 1.0 to 100µAFigure 4. Forward Voltage vs Forward Current
VF - 0.1 to 10mA
Figure 5. Forward Voltage vs Forward Current
VF - 10 - 800mA Figure 6. Total Capacitance
1 2 3 5 10 20 30 50 100
110
120
130
140
150
Reverse Current, I
R
[uA]
R
Ta= 2 5°C
Reverse Voltage, VR [v]
Ta = 25°C
GENERAL RUL E: The Reverse Current of a diode will app roximately
double for every ten (10) Degree C increase in Temperature
10 20 30 50 70 100
0
50
100
150
200
250
300
Reverse Voltage, V
R
[v]
Reverse Current, I
R
[nA]
225 1 2 3 5 10 20 30 50 100
250
300
350
400
450
Forward Current, I
F
[uA]
Forward Voltage, V
F
[mV]
F
F
485 Ta= 25°C
0.1 0.2 0.3 0.5 1 2 3 5 10
450
500
550
600
650
700
Forward Current, IF [mA]
Forward Voltage, V
F
[mV]
F
725 Ta= 25°C
10 20 30 50 100 200 300 500
0.6
0.8
1
1.2
1.4
Forward Current, I
F
[mA]
Forward Voltage, V
F
[V]
F
1.5 Ta= 25°C
02468101214
1
1.1
1.2
1.3
R everse Voltage [V]
Total Capacitance, C
T
[pF]
Ta= 25
°
C
15
©2004 Fairchild Semiconductor Corporation BAS16HT1G, Rev. A
BAS16HT1G
Typical Characteristics
(Continued)
Figure 7. Reverse Recovery Time vs Reverse Current
TRR - IR 10mA vs 60mA Figure 8. Average Rectified Current (I
F(AV)
) vs
Ambient Temperature (T
A
)
Figure 9. Power Derating Curve
I RR (Revers e Rec overy Curre nt ) = 1. 0 mA - Rloop = 1 00 O hms
10 20 30 40 50 60
1
1.5
2
2.5
3
3.5
4
Reverse Current [mA]
Reverse Recovery Time, t
rr
[ns]
Ta = 25°C
050100150
0
100
200
300
400
500
I - FORWARD CURRENT S TEADY STATE - mA
o
D
R
A
Io - AVERAGE RECTIFIED CURRENT - mA
050100150
0
100
200
300
400
I
F(AV)
- AVERAGE RECTIFIED CURRENT - mA
Current [mA]
Ambient Temperature, T
A
[ C]
o
0 50 100 150 200
0
100
200
300
400
500
SOD-323 Pkg
SOT-23 Pkg
DO-35 Pkg
Pow er Dis sipation, P
D
[mW]
Avera ge Temper atur e, I
o
[
o
C]
©2004 Fairchild Semiconductor Corporation BAS16HT1G, Rev. A
BAS16HT1G
Package Dimension
SOD-323
Dimensions in Millimeters
Rev. I11
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