BD433/5/7
BD434/6/8
COMPLEMENTARY SILICON POWER TRANSISTORS
■SGS -THO MS ON PRE F ERRE D SALES T YP E S
■COMP LEM EN TARY PNP - NPN DEVICES
DESCRIPTION
The BD433, BD435, and BD437 are silicon
epitaxial-base NPN power transistors in Jedec
SOT-32 plastic package, intented for use in
medium power linear and switching applications.
The BD433 is especially suitable for use in
car-radio output stages.
The complementary PNP types are BD434,
BD436, and BD438 respectiv ely.
INTERNAL SCHEMATIC DIAG RAM
June 1997
A BSO LUT E MAX IMU M RATIN GS
Symbol Parameter Value Unit
NPN BD433 BD435 BD437
PNP BD434 BD436 BD438
VCBO Collector-Base Voltage (IE = 0) 22 32 45 V
VCES Collector-Emitter Voltage (VBE = 0) 22 32 45 V
VCEO Collector-Emitter Voltage (IB = 0) 22 32 45 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
ICCollector Current 4 A
ICM Collector Peak Current (t ≤ 10 ms) 7 A
IBBase Current 1 A
Ptot Total Dissipation at Tc ≤ 25 oC36W
T
stg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
For PNP types voltage and current values are negative.
321
SOT-32
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max 3.5
100
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specif ied)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0) for BD433/434 VCB = 22 V
for BD435/436 VCB = 32 V
for BD437/438 VCB = 45 V
100
100
100
µA
µA
µA
ICES Collector Cut-off
Current (VBE = 0) for BD433/434 VCE = 22 V
for BD435/436 VCE = 32 V
for BD437/438 VCE = 45 V
100
100
100
µA
µA
µA
IEBO Emitter Cut-off Current
(IC = 0) VEB = 5 V 1 mA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA for BD433/434
for BD435/436
for BD437/438
22
32
45
V
V
V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 2 A IB = 0.2 A
for BD433/434
for BD435/436
for BD437/438
0.2
0.2
0.2
0.5
0.5
0.6
V
V
V
VBE∗Base-Emitter Voltage I C = 10 mA VCE = 5 V
IC = 2 A VCE = 1 V
for BD433/434
for BD435/436
for BD437/438
0.58
1.1
1.1
1.2
V
V
V
V
hFE∗DC Current Gain IC = 10 mA VCE = 5 V
for BD433/434
for BD435/436
for BD437/438
IC = 500 mA VCE = 1 V
IC = 2 A VCE = 1 V
for BD433/434
for BD435/436
for BD437/438
40
40
30
85
50
50
40
130
130
130
140
hFE1/hFE2∗Matched Pair IC = 500 mA V CE = 1 V 1.4
fTTransition frequency IC = 250 mA VCE = 1 V 3 MHz
∗ P ulsed: P ulse duration = 300 µs, duty cycle 1.5 %
BD433/434/435/436/437/438
2/4
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.445
b 0.7 0.9 0.028 0.035
b1 0.49 0.75 0.019 0.030
C 2.4 2.7 0.040 0.106
c1 1.0 1.3 0.039 0.050
D 15.4 16.0 0.606 0.629
e2.2 0.087
e3 4.15 4.65 0.163 0.183
F3.8 0.150
G 3 3.2 0.118 0.126
H2.540.100
H2 2.15 0.084
H2
0016114
SOT-32 (TO-126) MECHANICAL DATA
BD433/434/435/436/437/438
3/4
Information furnished is believed to be accurate and reliable. However, SG S-THOMSON Microelectronics assumes no responsability for the
conse quences of us e of such information n or for any infringement of patents or othe r rights of third part ies which may results from its use. No
license is granted by implicat ion or ot h erwise under any patent or patent rights of SGS-THOMSON Micro electronics . Specificati ons mentioned
in this publicat ion are subject to change without noti ce. This publicat ion sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Right s Reserved
SGS-THOMSO N Microelectronics GROUP OF COMPANIES
Australia - Braz il - Canada - China - France - Germany - Hong Ko ng - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
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. . .
BD433/434/435/436/437/438
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