2N2906 - 2N2906A PN2906 - PN2906A Vp | Yo PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES | CASE TO-18 CASE TO-92A THR 2N2906, 2N2906A, PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS id FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPENT SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2221, 2N2221A, PN2221, PN2221A RESPECTIVELY. THE 2N2906, 2N2906A ARE PACKED IN TO-18. CBE EBC THR PN2906, PN2906A ARE PACKED IN TO-92A. 2N2906 PN2906 2N2906A PN2906A ABSOLUTE MAXIMIM RATINGS 2N2906 2N2906A PN2906 PN2906A Collector-Base Voltage " =Vego 60V 6ov GOV 60V Collector-Emitter Voltage -VCEO 40V 60V 40V 60V Emitter-Base Voltage ~VEBO 5v 5V 5V 5V Collector Current -I 0.64 0.6A 0.6A 0.64 . Total Power Dissipation (Te< 25C) Prot 1.8W 1.8W 1.2W 1.2W | ~ (Ta $25C) - g00mW = 400mW = 500mW 500m, Junction Temperature Tj 200C 200 )3=150C 150C Storage Temperature Range Tate ~65 to 200C = =55 to 150C ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted) 2n2906 2n7 908 |! PARAMETER SYMBOL | PN2906 | PN2906A |UNIT|) TEST CONDITIONS | MIN MAX | MIN MAX 2} | Collector-Base Breakdown Voltage |-=BVcro | 60 60 V |-Ic+0.0lmA IE-O = | | Collector-Emitter Breakdown Voltagel -LVopo | 40 60 Vj -Ic=10mA Ip=0- | : Emitter-Base Breakdown Voltage -BVpR9 5 5 V |-Ig=0.0lmA Ic=0 | Collector Cutoff Current -IcRo 20 10 | nA | -Vop=50V Ip=0 20 10 | pA | -Vop=50V. Tg=0 Tj=150C Collector Cutoff Current -Icry 50 50 | nA |-Vop=30V -Vep=0.5V _|Rase Cutoff Current -Ipy, 50 50 | nA | -Vog=30V -VEB=0.5V a ~|Collector-Emitter Saturation -VCE(sat)* +4 0.4 | Vo | -Iq=150mA -Ip=15mA Voltase 1.6 1.6 | V_ |-Ic=500mA ~Ip=50mA 38 HUNG TO ROAD, KWUN TONG, HONG KONG. TELEX -43510 MICRO ELECTRONICS LTD. ivinvtote'r'o sonia cious aooness wmcrornone, FAX: 3410321 ' - -~ = Continued - - = 2nz906 | 2n2906A | | PARAMETER SYMBOL PN2906 | PN2906A |unrr} TEST. CONDITIONS ~~ MIN MAX | MIN MAX Base-Emitter Saturation Voltage VBE(sat)* 1.3 1.3 |v -Ic=150mA -Ip=lL5mA 2.6 2.6 Vv -I=500mA ~Ip=50mA D.C. Current Gain Ere # 20 40 -Ic=0.1mA -Vog=10V 25 . 40 -Ic=lmA -Vog=10V 35 40 | -Ig=10mA -VcER=10V 40 120 | 40 12 Ig=150mA -VcE=10V 20 40 =Ig=500mA -Vop=10V Current Gain-Bandwidth Product fm 200 200 MHz ~Ic=50mA -Vop=20V Collector-Base Capacitance Cob 8 8 | pF -Vop210V Ip=0 f=100kHz Emitter-Base Capacitance Cib 30 30 | pF -Vep=2V Ic=0 f=] 00kHz Turn-On Time ton 45 | nS | -Igel50mA -Ipl=15mA *Ve9"30V : A Turn-Off Time torf 100 | nS ~I=150mA -Ip)=Ip2=1 5mAl Voo=6V, Delay Time ta 10 10 | ns -Ig=150mA -Ipl=15mA ~Veo=30V Rise Time tr 40 40 [nS | =-Ige150mA -Ipi=15mA - =Veg=30V Storage Time ts 80 680 [nS ~Ig=150mA -Ip]*Ip2=15mA Vec=6V . Fall Time te 30 30 | ns -Ipe150mA -Ipl=Ip2=15mA __ ~Vog=6V * Pulse Test s Pulse Width=0.3mS, Duty Cycle=1% oe fo. co fb: