Feb.1999
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING Dimension in mm
MITSUBISHI GATE TURN-OFF THYRISTORS
FG2000JV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
FG2000JV-90DA
A
A
A
kA
A2s
A/µs
V
V
A
A
W
kW
W
W
°C
°C
kN
g
ITQRM
IT(RMS)
IT(AV)
ITSM
I2t
diT/dt
VFGM
VRGM
IFGM
IRGM
PFGM
PRGM
PFG(AV)
PRG(AV)
Tj
Tstg—
—
2000
940
600
13
7 × 105
500
10
17
50
700
250
23.8
50
150
–40 ~ +125
–40 ~ +150
18 ~ 24
760
VRRM
VRSM
VR(DC)
VDRM
VDSM
VD(DC)
V
V
V
V
V
V
90DA
17
17
17
4500
4500
3600
+ : VGK = –2V
AUXILIARY CATHODE
CONNECTOR (RED)
356 ± 8
GATE (WHITE)
φ 3.5 ± 0.2 DEPTH 2.2 ± 0.2
CATHODE
0.4 min0.4 min
TYPE NAME
ANODE
φ 63 ± 0.5
φ 63 ± 0.5
φ 93 max
26 ± 0.5
φ 3.5 ± 0.2 DEPTH 2.2 ± 0.2
¡ITQRM
Repetitive controllable on-state current .............
2000A
¡IT(AV) Average on-state current...................... 600A
¡VDRM Repetitive peak off state voltage ........ 4500V
¡Anode short type
MAXIMUM RATINGS
Voltage class
Symbol
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
+
Non-repetitive peak off-state voltage
+
DC off-state voltage+
Parameter Unit
UnitRatingsSymbol Parameter Conditions
Repetitive controllable on-state current
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
Current-squared, time integration
Critical rate of rise of on-state current
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate reverse current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate po wer dissipation
Average reverse gate power dissipation
Junction temperature
Storage temperature
Mounting force required
Weight
V
D
= 2250V, V
DM
= 3375V, T
j
= 125°C, C
S
= 4.0µF, L
S
= 0.3µH
f = 60Hz, sine wave θ = 180°, Tf = 91°C
One half cycle at 60Hz
One cycle at 60Hz
VD = 2250V, IGM = 30A, Tj = 125°C
Recommended value 20
Standard value
Feb.1999
Tj = 125°C, ITM = 2000A, Instantaneous measurment
Tj = 125°C, VRRM Applied
Tj = 125 °C, VDRM Applied, VGK = –2V
Tj = 125°C, VRG = 17V
Tj = 125°C, VD = 2250V, VGK = –2V
Tj = 125°C, ITM = 2000A, IGM = 30A, VD = 2250V
Junction to fin
DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C
MITSUBISHI GATE TURN-OFF THYRISTORS
FG2000JV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
V
mA
mA
mA
V/µs
µs
A
V
A
°C/W
VTM
IRRM
IDRM
IRG
dv/dt
tgt
IGQM
VGT
IGT
Rth(j-f)
tgq
T
j
= 125°C, I
TM
= 2000A, V
D
= 2250V, V
DM
= 3375V,
d
iGQ
/d
t
= –30A/
µ
s,
VRG = 17V, CS = 4.0µF, LS = 0.3µH——30µs
—
—
—
—
—
—
570
—
—
—
—
—
—
—
1000
—
—
—
—
—
10
0
23 5710
1
8
4
23445710
2
12
16
20
6
2
10
14
18
0
01234567
10
4
7
5
3
2
10
3
7
5
3
2
10
2
7
5
3
2
10
1
Tj = 125°C
10
0
2310
–1
5710
0
23 5710
1
23 5710
2
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
–1
VFGM = 10V
VGT = 1.5V
PFG(AV) = 50W
IFGM = 50A
Tj = 25°C
PFGM = 250W
IGT = 2.5A
0.025
02310
–3
5710
–2
2310
0
5710
1
23 5710
–1
23 5710
0
0.010
0.015
0.020
0.005
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
MAXIMUM ON-STATE CHARACTERISTIC
SURGE ON-STATE CURRENT (kA)
CONDUCTION TIME
(CYCLES AT 60Hz)
RATED SURGE ON-STATE CURRENT
THERMAL IMPEDANCE (°C/W)
TIME (s)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE CHARACTERISTICS
3.5
100
100
100
—
10
—
1.5
2.5
0.017
PERFORMANCE CURVES
On-state voltage
Repetitive peak reverse current
Repetitiv e peak off-state current
Reverse gate current
Critical rate of r ise of off-state voltage
Tur n-on time
Peak gate turn-off current
Gate trigger voltage
Gate trigger current
Thermal resistance
ELECTRICAL CHARACTERISTICS
Symbol Parameter Test conditions Limits
Min Typ Unit
Max
Tur n-off time
Feb.1999
MITSUBISHI GATE TURN-OFF THYRISTORS
FG2000JV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
0
400
800
1200
1600
2000
200
600
1000
1400
1800
0 600100 200 300 400 500
120° 180°
60°
90°
θ
360°
0
200
600
400
1000
800
1200
1400
1600
1800
2200
2000
2400
0 200 400 600 800 1000
DC
270°
θ = 30°
120°
180°
60°90°
360°
θ
60
70
80
90
100
110
120
130
140
0 200 400 600 800 1000
θ = 30° 60° 90°120° DC
270°
360°
θ
180°
0
2
4
6
8
10
12
14
16
0 10203040 6050
t
gt
t
d
I
T
= 2000A
V
D
= 2250V
d
iT
/d
t
= 500A/µs
d
iG
/d
t
= 10A/µs
T
j
= 125°C
60
70
80
90
100
110
120
130
140
0 100 200 300 400 500 600
θ
360°
θ = 30° 60° 90° 180°120°
8
6
5
3
1
0160–40 0 40 80 120
2
4
7
V
D
= 24V
R
L
= 0.1Ω
I
GT
V
GT
θ = 30°
DC METHOD
ON-STATE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(SINGLE-PHASE HALF WAVE)
FIN TEMPERATURE (°C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
FIN TEMPERATURE (°C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
GATE TRIGGER CURRENT (A), GATE TRIGGER VOLTAGE (V)
JUNCTION TEMPERATURE (°C)
GATE TRIGGER CURRENT, GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
(MAXIMUM)
TURN ON TIME t
gt
, TURN ON DELAY TIME t
d
(µs)
TURN ON GATE CURRENT (A)
TURN ON TIME, TURN ON DELAY TIME
VS. TURN ON GATE CURRENT
(TYPICAL)
ON-STATE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(RECTANGULAR WAVE)
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
Feb.1999
MITSUBISHI GATE TURN-OFF THYRISTORS
FG2000JV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
700
600
500
400
300
200 25000500 1000 1500 2000
V
D
= 2250V
V
DM
= 3375V
d
iGQ
/d
t
= –30A/µs
V
RG
= 17V
C
S
= 4.0µF
L
S
= 0.3µH
T
j
= 125°C
50
40
30
20
10
010 20 30 40 6050
t
gq
t
s
V
D
= 2250V
V
DM
= 3375V
I
T
= 2000A
V
RG
= 17V
C
S
= 4.0µF
L
S
= 0.3µH
T
j
= 125°C
800
700
600
500
400
300 6010 20 30 40 50
V
D
= 2250V
V
DM
= 3375V
I
T
= 2000A
V
RG
= 17V
C
S
= 4.0µF
L
S
= 0.3µH
T
j
= 125°C
30
25
20
15
10
525000 500 1000 1500 2000
t
gq
t
s
V
D
= 2250V
V
DM
= 3375V
d
iGQ
/d
t
= –30A/µs
V
RG
= 17V
C
S
= 4.0µF
L
S
= 0.3µH
T
j
= 125°C
0
0.8
1.6
2.4
0.4
1.2
2.0
0 800 24002000400 1200 1600
V
D
= 2250V
I
GM
= 30A
d
iG
/d
t
= 10A/µs
C
S
= 4.0µF
R
S
= 5Ω
T
j
= 125°C
d
iT
/d
t
= 300A/µs
200A/µs
100A/µs
0
2.0
4.0
6.0
1.0
3.0
5.0
0 800 24002000400 1200 1600
6µF
4µF
C
S
= 2µF
V
D
= 2250V
V
DM
= 3375V
d
iGQ
/d
t
= –30A/µs
V
RG
= 17V
L
S
= 0.3µH
T
j
= 125°C
RATE OF RISE OF TURN OFF GATE CURRENT (A/µs)
TURN OFF GATE CURRENT (A)
RATE OF RISE OF TURN OFF GATE CURRENT (A/µs)
TURN OFF GATE CURRENT VS.
RATE OF RISE OF GATE CURRENT
(TYPICAL)
SWITCHING ENERGY Eon (J/P)
TURN ON CURRENT (A)
TURN ON SWITCHING ENERGY
(MAXIMUM)
TURN OFF GATE CURRENT (A)
TURN OFF CURRENT (A)
TURN OFF GATE CURRENT
VS. TURN OFF CURRENT
(TYPICAL)
SWITCHING ENERGY Eoff (J/P)
TURN OFF CURRENT (A)
TURN OFF SWITCHING ENERGY
(MAXIMUM)
TURN OFF TIME t
gq,
TURN OFF STORAGE TIME t
s
(µs)
TURN OFF CURRENT (A)
TURN OFF TIME, TURN OFF STORAGE TIME
VS. TURN OFF CURRENT
(TYPICAL)
TURN OFF TIME t
gq
, TURN OFF STORAGE TIME t
s
(µs)
TURN OFF TIME, TURN OFF STORAGE TIME
VS. RATE OF RISE OF TURN OFF GATE CURRENT
(TYPICAL)