2N7002A N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary BVDSS RDS(ON) Max 60V 6 @ VGS = 5V Features and Benefits ID Max TA = +25C 220mA Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Motor Control Power Management Functions N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected Gate, 1.2kV HBM, 1kV CDM Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Qsuffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/. This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/ An Automotive-Compliant Part is Available Under Separate Datasheet (2N7002AQ) Mechanical Data Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.008 grams (Approximate) Drain SOT23 D Gate S G ESD PROTECTED TO 1.2kV Gate Protection Diode Top View Source Equivalent Circuit Top View Pin-Out Ordering Information (Note 4) Part Number 2N7002A-7 2N7002A-13 Notes: Case SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 2N7002A Document number: DS31360 Rev. 14 - 2 1 of 6 www.diodes.com November 2020 (c) Diodes Incorporated 2N7002A Marking Information NEW PRODUCT MN1 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: H = 2020) M or M = Month (ex: 9 = September) YM MN1 Date Code Key Year Code 2008 V ... ... 2020 H 2021 I 2022 J 2023 K 2024 L 2025 M 2026 N 2027 O 2028 P 2029 R Month Code Jan 1 Feb 2 Mar 3 Apr 4 May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit VDSS 60 V Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V Steady State TA = +25C TA = +85C TA = +100C Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25C TA = +85C TA = +100C Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) VGSS 20 V ID 180 130 115 mA ID 220 160 140 mA IS 220 mA IDM 800 mA Value Unit Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Total Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol (Note 5) (Note 6) (Note 5) (Note 6) (Note 6) Operating and Storage Temperature Range Notes: PD RJA 370 540 348 241 RJC 91 TJ, TSTG -55 to +150 mW C/W C 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1" x 1" FR-4 PCB with high coverage 2oz. Copper, single sided. 2N7002A Document number: DS31360 Rev. 14 - 2 2 of 6 www.diodes.com November 2020 (c) Diodes Incorporated 2N7002A Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Min Typ Max Unit BVDSS 60 Test Condition 70 V VGS = 0V, ID = 10A A VDS = 60V, VGS = 0V IDSS 1.0 500 IGSS 10 A VGS = 20V, VDS = 0V VGS(TH) 1.2 2.0 V VDS = VGS, ID = 250A @ TJ = +25C RDS(ON) @ TJ = +125C 3.5 3.0 6 5 gFS 80 mS Input Capacitance Ciss 23 pF Output Capacitance Coss 3.4 pF Reverse Transfer Capacitance Crss 1.4 pF Gate Resistance RG 260 400 VDS = 0V, VGS = 0V, f = 1.0MHz Turn-On Delay Time tD(ON) 10 ns Turn-Off Delay Time tD(OFF) 33 ns VDD = 30V, ID = 0.115A, RL = 150, VGEN = 10V, RGEN = 25 Zero Gate Voltage Drain Current @ TC = +25C @ TC = +125C Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VGS = 5.0V, ID = 0.115A VGS = 10V, ID = 0.115A VDS = 10V, ID = 0.115A DYNAMIC CHARACTERISTICS (Note 8) VDS = 25V, VGS = 0V, f = 1.0MHz SWITCHING CHARACTERISTICS (Note 8) Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 0.6 1 V DS = 5V Pulsed 0.5 0.4 0.3 0.2 )A ( T N E R R U 0.1 C N IA R D ,D I ID, DRAIN CURRENT (A) NEW PRODUCT Symbol 0.1 TA = 150C TA = 85C TA = 25C T A = -55C 0 2N7002A Document number: DS31360 Rev. 14 - 2 0.01 1 3 of 6 www.diodes.com 2 3 4 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 5 November 2020 (c) Diodes Incorporated 2N7002A 2.5 9 R DS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () 2.0 7 6 1.5 5 1.0 VGS = 5V 4 3 VGS = 10V 0.5 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 On-Resistance vs. Drain Current & Gate Voltage 100 1.9 1.8 ID = 250A CT, CAPACITANCE (pF) VGS(TH), GATE THRESHOLD VOLTAGE (V) 2.0 1.7 1.6 1.5 1.4 1.3 Ciss 10 Coss 1.2 1.1 1 1.0 -50 -25 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (C) Fig. 5 Gate Threshold Variation vs. Ambient Temperature Crss 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Total Capacitance 40 1 IS, SOURCE CURRENT (A) NEW PRODUCT 8 0.1 TA = 150C TA = 125C 0.01 TA = 85C 0.001 TA = 25C TA = -55C 0.0001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VSD , SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage 2N7002A Document number: DS31360 Rev. 14 - 2 4 of 6 www.diodes.com November 2020 (c) Diodes Incorporated 2N7002A Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. NEW PRODUCT SOT23 All 7 H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D G F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0 8 -All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X 2N7002A Document number: DS31360 Rev. 14 - 2 Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 5 of 6 www.diodes.com November 2020 (c) Diodes Incorporated 2N7002A IMPORTANT NOTICE NEW PRODUCT 1. 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Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. Copyright (c) 2020 Diodes Incorporated www.diodes.com 2N7002A Document number: DS31360 Rev. 14 - 2 6 of 6 www.diodes.com November 2020 (c) Diodes Incorporated