2N7002A
Document number: DS31360 Rev. 14 - 2
1 of 6
www.diodes.com
November 2020
© Diodes Incorporated
2N7002A
NEW PROD UCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
RDS(ON) Max
60V
6Ω @ VGS = 5V
Description and Applications
This MOSFET has been designed to minimize the on-state
resistance (RDS(ON)) yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Motor Control
Power Management Functions
Features and Benefits
N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate, 1.2kV HBM, 1kV CDM
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change
control (i.e.: parts qualified to AEC-Q100/101/200, PPAP
capable, and manufactured in IATF 16949 certified
facilities), please refer to the related automotive grade (Q-
suffix) part. A listing can be found at
https://www.diodes.com/products/automotive/automotive-
products/.
This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability.
https://www.diodes.com/quality/product-definitions/
An Automotive-Compliant Part is Available Under
Separate Datasheet (2N7002AQ)
Mechanical Data
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
2N7002A-7
SOT23
3,000/Tape & Reel
2N7002A-13
SOT23
10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
SOT23
Top View
Equivalent Circuit
Top View
Pin-Out
D
GS
ESD PROTECTED TO 1.2kV
Source
Gate
Protection
Diode
Gate
Drain
e3
2N7002A
Document number: DS31360 Rev. 14 - 2
2 of 6
www.diodes.com
November 2020
© Diodes Incorporated
2N7002A
NEW PROD UCT
Marking Information
Date Code Key
Year
2008
…
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
Code
V
…
H
I
J
K
L
M
N
O
P
R
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
TA = +25°C
TA = +85°C
TA = +100°C
ID
180
130
115
mA
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
TA = +25°C
TA = +85°C
TA = +100°C
ID
220
160
140
mA
Maximum Continuous Body Diode Forward Current (Note 6)
IS
220
mA
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
IDM
800
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation
(Note 5)
PD
370
mW
(Note 6)
540
Thermal Resistance, Junction to Ambient
(Note 5)
RθJA
348
°C/W
(Note 6)
241
Thermal Resistance, Junction to Case
(Note 6)
RθJC
91
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
MN1 = Product Type Marking Code
YM = Date Code Marking
Y or = Year (ex: H = 2020)
M or M = Month (ex: 9 = September)
Y
MN1
YM
2N7002A
Document number: DS31360 Rev. 14 - 2
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November 2020
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2N7002A
NEW PROD UCT
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
60
70
V
VGS = 0V, ID = 10µA
Zero Gate Voltage Drain Current @ TC = +25°C
@ TC = +125°C
IDSS
1.0
500
µA
VDS = 60V, VGS = 0V
Gate-Body Leakage
IGSS
±10
µA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
1.2
2.0
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance @ TJ = +25°C
@ TJ = +125°C
RDS(ON)
3.5
3.0
6
5
VGS = 5.0V, ID = 0.115A
VGS = 10V, ID = 0.115A
Forward Transconductance
gFS
80
mS
VDS = 10V, ID = 0.115A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
23
pF
VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance
Coss
3.4
pF
Reverse Transfer Capacitance
Crss
1.4
pF
Gate Resistance
RG

260
400
VDS = 0V, VGS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 8)
Turn-On Delay Time
tD(ON)
10
ns
VDD = 30V, ID = 0.115A, RL = 150,
VGEN = 10V, RGEN = 25
Turn-Off Delay Time
tD(OFF)
33
ns
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
0
0.1
0.2
0.3
0.4
0.5
0.6
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
0.01
0.1
1
1
2
3
4
5
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V = 5V
Pulsed
DS
ID, DRAIN CURRENT (A)
2N7002A
Document number: DS31360 Rev. 14 - 2
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November 2020
© Diodes Incorporated
2N7002A
NEW PROD UCT
Fig. 3 On-Resistance vs. Drain Current & Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R, STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
1
2
3
4
5
6
7
8
9
0 0.1 0.2 0.3 0.4 0.5 0.6
V = 5V
GS
V = 10V
GS
0
0.5
1.0
1.5
2.0
2.5
Fig. 6 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C , CAPACITANCE (pF)
T
1
10
100
0 5 10 15 20 25 30 35 40
Ciss
Coss
Crss
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
-50
-25
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
A
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
1.0
I = 250µA
D
VGS(TH), GATE THRESHOLD VOLTAGE (V)
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage
V , SOURCE-DRAIN VOLTAGE (V)
SD
0.0001
0.001
0.01
0.1
1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
IS, SOURCE CURRENT (A)
2N7002A
Document number: DS31360 Rev. 14 - 2
5 of 6
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November 2020
© Diodes Incorporated
2N7002A
NEW PROD UCT
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
J
K1 K
L1
GAUGE PLANE
0.25
H
L
M
All 7°
A
CB
D
G
F
a
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.890
1.00
0.975
K1
0.903
1.10
1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085
0.150
0.110
a
0°
8°
--
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
X
Y
Y1 C
X1
Dimensions
Value (in mm)
C
2.0
X
0.8
X1
1.35
Y
0.9
Y1
2.9
2N7002A
Document number: DS31360 Rev. 14 - 2
6 of 6
www.diodes.com
November 2020
© Diodes Incorporated
2N7002A
NEW PROD UCT
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