MC10XS4200BAFK - Freescale Semiconductor

Document Number: MC10XS4200

Rev. 6.0, 12/2013

Freescale Semiconductor

Advance Information

* This document contains certain information on a new product.

Specifications and information herein are subject to change without notice.

Dual

24 V,

10 mOhm High Side

Switch

The 10XS4200 device is part of a 24 V dual high side switch product

family with integrated control, and a high number of protective and

diagnostic functions. It has been designed for truck, bus, and industrial

applications. The low RDS(ON) channels (<10 m) can control different

load types; bulbs, solenoids, or DC motors. Control, device

configuration, and diagnostics are performed through a 16-bit serial

peripheral interface (SPI), allowing easy integration into existing

applications. This device is powered by SMARTMOS technology.

Both channels can be controlled individually by external or internal

clock signals, or by direct inputs. Using the internal clock allows fully

autonomous device operation. Programmable output voltage slew-

rates (individually programmable) helps improve electromagnetic

compatability (EMC) performance. To avoid shutting off the device

upon inrush current, while still being able to closely track the load

current, a dynamic overcurrent threshold profile is featured. Switching

current of each channel can be sensed with a programmable sensing

ratio. Whenever communication with the external microcontroller is

lost, the device enters a Fail-safe operation mode, but remains

operational, controllable, and protected.

Features

• Two fully protected 10 m (@ 25 °C) high side switches

•Up to 6.0 A steady state current per channel

• Separate bulb and DC motor latched overcurrent handling

• Individually programmable internal/external PWM clock signals

• Overcurrent, short-circuit, and overtemperature protection with

programmable autoretry functions

• Accurate temperature and current sensing

• OpenLoad detection (channel in OFF and ON state), also for LED

applications (7.0 mA typ.)

• Normal operating range: 8.0 - 36 V, extended range: 6.0 - 58 V

•3.3 V and 5.0 V compatible 16-bit SPI port for device control, 

configuration and diagnostics at rates up to 8.0 MHz

Figure 1. Simplified Application Diagram

FK SUFFIX (PB-FREE)

98ASA00428D

23 PIN PQFN (12 X12 mm)

10XS4200

HIGH SIDE SWITCH

MCU

CLOCK

FSB

SCLK

CSB

RSTB

IN0

IN1

CSNS GND

VDD VPWR

HS0

HS1

LOAD

I/O

SCLK

CSB

I/O

A/D

GND

LOAD

CONF0

CONF1

FSOB

I/O

A/D SYNC

I/O

10XS4200

PWR

Analog Integrated Circuit Device Data

2Freescale Semiconductor

10XS4200

ORDERABLE PARTS

Table 1. Simplified Orderable Part VariationsTable

Orderable Part Number Version Reverse Battery

voltage (V)

Negative clamp

voltage (V) Slew Rates Product ID Bit

Overcurrent

Profile

Configuration

MC10XS4200FK --28 -24

Standard 00

Hardware

MC10XS4200BFK (1) B (2)

-32 -32 Hardware +

Software

MC10XS4200BAFK (1) BA (2), (3) Accelerated 10

Notes:

1. Recommended for all new designs.

2. Version B and BA devices can support negative voltage battery and ground loss down to -32V, the overcurrent profile can be selected

by SPI, errata sheet MC24XS4ER is no more valid.

3. Version BA devices have faster slew rates to reduce switching losses.

Analog Integrated Circuit Device Data

Freescale Semiconductor 3

10XS4200

INTERNAL BLOCK DIAGRAM

Figure 2. Internal Block Diagram

GND

Overtemperature

Detect.

Control

Severe Short-circuit

Selectable Overcurrent

Internal

Regulator

Selectable Slew Rate

Gate Driver

Over/Undervoltage

Protections

HS0

VPWRVDD

CSB

SCLK

RSTB

CLOCK

FSB

IN0

HS1

HS0

HS1

IN1

Detection

Output

CSNS

IDWN

IUP

OpenLoad

Detect

Detection

Temperature

Feedback

VREG

Short-circuit to

Charge

VDD Failure

Detection

Calibratable

Oscillator * PWM

Module

Drain/Gate

Clamp

RDWN

Current Sense

Analog MUX

Overtemperature

Prewarning

Pump

POR

FSOB

CONF0

CONF1

IUP

VREG

IDWN

SYNC

IDWN

VPWR detec.

Logic

*blocks marked in grey have implemented

independently for each of both channels

Analog Integrated Circuit Device Data

4Freescale Semiconductor

10XS4200

TABLE OF CONTENTS

Orderable Parts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Internal Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Static Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Pin Assignment and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Functional Internal Block Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

Functional Device Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

Operation and Operating Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

Protection and Diagnostic Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

Logic Commands and SPI Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44

Typical Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52

Soldering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54

Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63

Analog Integrated Circuit Device Data

Freescale Semiconductor 5

10XS4200

PIN ASSIGNMENT

Figure 3. 10XS4200 Pin Assignments

The function of each pin is described in the section Functional Description

Table 2. 10XS4200 Pin Description

Number Pin Name Function Formal Name Definition

1CSNS Output Output Current/

Temperature

Monitoring

This pin either outputs a current proportional to the channel’s output current or

a voltage proportional to the temperature of the GND pin (pin 14). Selection

between current and temperature sensing, as well as setting the current

sensing sensitivity, are performed through the SPI interface. An external pull-

down resistor must be connected between CSNS and GND.

IN0

IN1

Input Direct Inputs The IN[0 : 1] input pins are used to directly control the switching state of both

switches and consequently the voltage on the HS0 : HS1 output pins. The pins

are connected to GND by internal pull-down resistors

4FSOB Output Fail-safe Output

(Active Low)

FSOB is asserted (active-low) upon entering Fail-safe mode (see Functional

Description) This open-drain output requires an external pull-up resistor to

VPWR

CONF0

CONF1

Input Configuration Input The CONF[0 : 1] input pins are used to select the appropriate overcurrent

detection profile (bulb /DC motor) for each of both channels. CONF requires a

pull-down resistor to GND.

7FSB Output Fault Status

(Active Low)

This open-drain output pin (external pull-up resistor to VDD is required) is set

when the device enters Fault mode (see Fault Mode)

8CLOCK Input PWM Clock The clock input gives the time-base when the device is operated in external

clock/internal PWM mode.

This pin has an internal pull-down current source.

9RSTB Input Reset This input pin is used to initialize the device’s configuration - and fault registers.

Reset puts the device in Sleep mode (low current consumption) provided it is

not stimulated by direct input signals.This pin is connected to GND by an

internal pull-down resistor.

10 CSB Input Chip Select

(Active Low)

This input pin is connected to the SPI chip-select output of an external micro-

controller. CSB is internally pulled up to VDD by a current source IUP.

Transparent Top View

2019

HS0HS1

CSNS

IN1

FSOB

CONF0

CONF1

FSB

RSTB

CSB

SCLK

VDD

GND

VPWR

CLOCK

IN0

SYNC

GND

VPWR

GND

VPWR

Analog Integrated Circuit Device Data

6Freescale Semiconductor

10XS4200

PIN ASSIGNMENT

11 SCLK Input Serial Clock This input pin is to be connected to an external SPI Clock signal. The SCLK

pin is internally connected to a pull-down current source IDWN

12 SI Input Serial Input This input pin receives the SPI input data from an external device (micro-

controller or another extreme switch device in case of daisy-chaining). The SI

pin is internally connected to a pull-down current source IDWN

13 VDD Power Digital Drain Voltage This is the positive supply pin of the SPI interface.

16 SO Output Serial Output This output pin transmits SPI data to an external device (external micro-

controller or the SI pin of the next SPI device in case of daisy-chaining). The

pin doesn’t require external pull-up or pull-down resistors, but a series resistor

is recommended to limit current consumption in case of GND disconnection

14, 17, 22 GND Ground Ground These pins, internally connected, are the ground pins for the logic and analog

circuitry. It is recommended to also connect these pins on the PCB.

15,18,21 VPWR Power Positive Power Supply These pins, internally connected, supply both the device’s power and control

circuitry (except the SPI port). The drain of both internal MOSFET switches is

connected to them. Pin 15 is the device’s primary thermal pad.

HS1

HS0

Output Power Switch Outputs Output pins of the switches, to be connected to the load.

23 SYNC Output Output Current

Monitoring

Synchronization

This output pin is asserted (logic low) when the Current Sense (CS) output

signal is within the specified accuracy range. Reading the SYNC pin allows the

external microprocessor to synchronize to the device when operating in

autonomous operating mode. SYNC is open-drain and requires a pull-up

resistor to VDD.

Table 2. 10XS4200 Pin Description (continued)

Number Pin Name Function Formal Name Definition

Analog Integrated Circuit Device Data

Freescale Semiconductor 7

10XS4200

ELECTRICAL CHARACTERISTICS

MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

MAXIMUM RATINGS

Table 3. Maximum Ratings

All voltages are relative to ground unless mentioned otherwise. Exceeding these ratings may cause permanent damage.

Parameter Symbol Maximum ratings Unit

ELECTRICAL RATINGS

VPWR Supply Voltage Range

Load Dump at 25 °C (500 ms)

Reverse Battery at 25 °C

10XS4200FK

10XS4200BFKand 10XS4200BAFK

Fast Negative Transient Pulses (ISO 7637-2 pulse #1, VPWR=14V & Ri=10)

VPWR

-28

-32

-60

VDD Supply Voltage Range VDD -0.3 to 5.5 V

Voltage on Input pins (4) (except IN[0:1]) and Output pins (5) (except HS[0:1]) VMAX,LOGIC(4) -0.3 to 5.5 V

Voltage on Fail-safe Output (FSOB) VFSO -0.3 to 58 V

Voltage on SO pin VSO -0.3 to VDD+0.3 V

Voltage (continuous, max. allowable) on IN[0:1] Inputs VIN,MAX 58 V

Voltage (continuous, max. allowable) on output pins (HS [0:1])

10XS4200FK

10XS4200BFK and 10XS4200BAFK

VHS[0:1]

-28 to 58

-32 to 58

Rated Continuous Output Current per channel(6) IHS[0:1] 6.0 A

Maximum allowable energy dissipation per channel and two parallel channels,

single-pulse method(7) ECL [0:1]_SING 128 mJ

Notes:

4. Concerned Input pins are: CONF[0:1], RSTB, SI, SCLK, Clock, and CSB.

5. Concerned Output pins are: CSNS, SYNC, and FSB.

6. Output current rating valid as long as maximum junction temperature is not exceeded. For computation of the maximum allowable output

current, the thermal resistance of the package & the underlying heatsink must be taken into account

7. Single pulse Energy dissipation, Single-pulse short-circuit method (LL = 0.5 mH, R = 48 mVPWR = 28 V, TJ = 150 C initial).

Analog Integrated Circuit Device Data

8Freescale Semiconductor

10XS4200

ELECTRICAL CHARACTERISTICS

MAXIMUM RATINGS

ELECTRICAL RATINGS (CONTINUED)

ESD Voltage(8)

Human Body Model (HBM) for HS[0:1], VPWR and GND

Human Body Model (HBM) for other pins

Charge Device Model (CDM)

Package Corner pins (1, 13, 19, 20)

All Other pins

VESD1

VESD2

VESD3

VESD4

± 8000

± 2000

± 750

± 500

THERMAL RATINGS

Operating Temperature

Ambient

Junction

- 40 to 125

- 40 to 150

C

Storage Temperature TSTG - 55 to 150 C

Thermal Resistance Junction to Case Bottom/ VPWR Flag Surface RJC 0.22 C/ W

Peak package reflow temperature during reflow(8),(10) TPPRT Note 10 C

Notes:

8. ESD testing is performed in accordance with the Human Body Model (HBM) (CZAP = 100 pF, RZAP = 1500 ), and the Charge Device

Model (CDM), Robotic (CZAP = 4.0 pF).

9. Pin soldering temperature limit is for 40 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may

cause malfunction or permanent damage to the device.

10. Freescale’s Package Reflow capability meets Pb-free requirements for JEDEC standard J-STD-020. For Peak Package Reflow

Temperature and Moisture Sensitivity Levels (MSL), Go to www.freescale.com, search by part number [e.g. remove prefixes/suffixes

and enter the core ID to view all orderable parts. (i.e. MC33xxxD enter 33xxx), and review parametrics.

Table 3. Maximum Ratings (continued)

All voltages are relative to ground unless mentioned otherwise. Exceeding these ratings may cause permanent damage.

Parameter Symbol Maximum ratings Unit

Analog Integrated Circuit Device Data

Freescale Semiconductor 9

10XS4200

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

Table 4. Static Electrical Characteristics

Unless specified otherwise: 8.0 V  VPWR  36 V, 3.0 V  VDD  5.5 V, - 40 C  TA  125 C, GND = 0 V. Typical values are

average values evaluated under nominal conditions TA = 25 °C, VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.

parameter Symbol Min Typ Max Unit

SUPPLY ELECTRICAL CHARACTERISTICS

Supply Voltage Range:

Full Specification compliant

Extended Mode(11)

VPWR

8.0

6.0

–

VPWR Supply Current, device in wake-up mode, channel On, OpenLoad

outputs in ON-state, HS[0 : 1] open, IN[0:1] > VIH

10XS4200FK and 10XS4200BFK

10XS4200BAFK

IPWR(ON)

–

6.5

8.0

8.5

VPWR Supply Current, device in wake-up mode (Standby), channel Off

OpenLoad in OFF-state Detection Disabled, HS[0 : 1] shorted to ground

with VDD = 5.5 V and RSTB > VWAKE

IPWR(SBY)

–6.5 8.0

Sleep State Supply Current

VPWR = 24 V, RSTB = IN[0:1] < VWAKE, HS[0 : 1] connected to ground

TA = 25 °C

TA = 125 °C

IPWR(SLEEP)

–

3.0

–

10.0

60.0

A

VDD Supply Voltage VDD(ON) 3.0 –5.5 V

VDD Supply Current at VDD = 5.5 V

No SPI Communication

8.0 MHz SPI Communication(12)

IDD(ON)

–

5.0

2.2

–

VDD Sleep State Current at VDD = 5.5 V with or without VPWR IDD(SLEEP) – – 5.0 A

Overvoltage Shutdown Threshold VPWR(OV) 39 42 45.5 V

Overvoltage Shutdown Hysteresis VPWR(OVHYS) 0.2 0.8 1.5 V

Undervoltage Shutdown Threshold(13) VPWR(UV) 5.0 –6.0 V

VPWR Power-On-Reset (POR) Voltage Threshold(13) VPWR(POR) 2.2 2.6 4.0 V

VDD Power-On-Reset (POR) Voltage Threshold(13) VDD(POR) 1.5 2.0 2.5 V

VDD Supply Failure Voltage Threshold (assumed VPWR > VPWR(UV))VDD(FAIL) 2.2 2.5 2.8 V

Notes

11. In extended mode, several device functions (channel control, RDS(ON) and overtemperature protection) are guaranteed, but compliance

with the specified values in this document is not. Below 6.0 V, the device is only protected from overheating (thermal shutdown). Above

VPWR(OV), the channels can only be turned ON when the overvoltage detection function has been disabled.

12. Typical value guaranteed per design.

13. When the device recovers from undervoltage and returns to normal mode (6.0 V < VPWR < 58 V) before the end of the auto-retry period

(see Auto-retry), the device performs normally. When VPWR drops below VPWR(UV), undervoltage is detected see Undervoltage Fault

(Latchable Fault) and EMC Performances.

Analog Integrated Circuit Device Data

10 Freescale Semiconductor

10XS4200

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS OF THE OUTPUT STAGE (HS0 AND HS1)

ON-Resistance, Drain-to-Source (IHS = 3.0 A, TJ = 25 °C)

CSNS_ratio = 0

VPWR = 8.0 V

VPWR = 28 V

VPWR = 36 V

RDS(ON)25

–

m

ON-Resistance, Drain-to-Source (IHS = 3.0 A,TJ = 150 °C)

CSNS_ratio = 0

VPWR = 8.0 V

VPWR = 28 V

VPWR = 36 V

RDS(ON)150

–

m

ON-Resistance, Drain-to-Source difference from one channel to the other

in parallel mode (IHS = 1.0 A,TJ = 150 °C) CSNS_ratio = X

RDS(ON)150

-0.8 –+0.8 m

ON-Resistance, Source-Drain (IHS = -3.0 A, TJ = 150 °C, 

VPWR = -24 V)

RSD(ON)150 – – 18 m

Max. detectable wiring length (2.5 mm²) for severe short-circuit detection

10XS4200FK and 10XS4200BFK

High slew rate selected

Medium slew rate selected:

Low slew rate selected:

10XS4200BAFK

High slew rate selected

Medium slew rate selected:

Low slew rate selected:

LSHORT

100

160

280

135

250

140

300

600

130

240

430

Overcurrent Detection thresholds with CSNS_ratio bit = 0 (CSR0) I_OCH1_0

I_OCH2_0

I_OCM1_0

I_OCM2_0

I_OCL1_0

I_OCL2_0

I_OCL3_0

9.0

6.0

3.0

10.8

7.2

3.6

19.5

12.6

8.4

4.2

Overcurrent Detection thresholds with CSNS_ratio bit = 1(CSR1) I_OCH1_1

I_OCH2_1

I_OCM1_1

I_OCM2_1

I_OCL1_1

I_OCL2_1

I_OCL3_1

18.3

11.7

7.2

4.4

3.0

2.0

0.96

14.0

8.7

5.3

3.6

2.4

1.2

26.5

16.3

10.1

6.2

4.2

2.8

1.44

Table 4. Static Electrical Characteristics (continued)

Unless specified otherwise: 8.0 V  VPWR  36 V, 3.0 V  VDD  5.5 V, - 40 C  TA  125 C, GND = 0 V. Typical values are

average values evaluated under nominal conditions TA = 25 °C, VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.

parameter Symbol Min Typ Max Unit

Analog Integrated Circuit Device Data

Freescale Semiconductor 11

10XS4200

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS OF THE OUTPUT STAGE (HS0 AND HS1) (CONTINUED)

Output pin leakage Current in sleep state (positive value = outgoing)

10XS4200FK

VHS,OFF = 0 V (VHS,OFF = output voltage in OFF state)

VHS,OFF = VPWR, device in sleep state (VPWR = 24 V)

10XS4200BFK and 10XS4200BAFK

VHS,OFF = 0 V (VHS,OFF = output voltage in OFF state)

VHS,OFF = VPWR, device in sleep state (VPWR = 24 V)

VHS,OFF = VPWR, device in sleep state (VPWR = 36 V)

IOUT_LEAK

–

-40.0

–

-120

-1400

–

+16

+5.0

+16

+5.0

µA

Output biasing current in off-state (positive value = outgoing)

10XS4200BFK

with OL_OFF disabled (worst case for VPWR = 36 V, VHS,OFF = 34 V)

Fast slew rate selected

Medium slew rate selected

Slow slew rate selected

10XS4200BAFK

with OL_OFF disabled (worst case for VPWR = 36 V, VHS,OFF = 34 V)

Fast slew rate selected

Medium slew rate selected

Slow slew rate selected

With OL_OFF disabled and ECU ground disconnected (VPWR = 32 V) for

10XS4200B and 10XS4200BA

IOUT_OFF

-620

-440

-330

-770

-520

-390

-495

-360

-280

-620

-420

-315

–

-380

-280

-230

-460

-310

-240

1000

µA

Switch Turn-on threshold for Supply overvoltage (VPWR -GND) VD_GND(CLAMP) 58 –66 V

Switch turn-on threshold for Drain-Source overvoltage (measured at

IOUT = 500 mA

VDS(CLAMP) 58 –66 V

Current Sensing Ratio (14)

CSNS_ratio bit = 0 (high current mode)

CSNS_ratio bit = 1 (low current mode)

CSR0

CSR1

–

1/3000

1/1000

–

Minimum measurable load current with compensated error (16) I_LOAD_MIN – – 100 mA

CSNS leakage current in OFF state (CSNSx_en = 0, CSNS_ratio bit_x = 0)ICSR_LEAK -4.0 –+4.0 µA

Systematic offset error (see Current Sense Errors)

10XS4200FK

10XS4200BFK and 10XS4200BAFK

I_LOAD_ERR_SYS

–

-10

–

Random offset error I_LOAD_ERR_RAND -150 –150 mA

Notes:

14. Current Sense Ratio CSRx = ICSNS / IHS[x]

15. ESRx_ERR=(ICSNS_MEAS / ICSNS_MODEL) -1, with ICSNS_MODEL = (I(HS[x])+ I_LOAD_ERR_SYS) * CSRx , (I_LOAD_ERR_SYS defined above, see

section Current Sense Error Model). With this model, load current becomes: I(HS[x]) = ICSNS / CSRx - I_LOAD_ERR_SYS

16. See note (15), but with ICSNS_MEAS obtained after compensation of I_LOAD_ERR_RAND (see Activation and Use of Offset Compensation).

Further accuracy improvements can be obtained by performing a 1 or 2 point calibration.

Table 4. Static Electrical Characteristics (continued)

Unless specified otherwise: 8.0 V  VPWR  36 V, 3.0 V  VDD  5.5 V, - 40 C  TA  125 C, GND = 0 V. Typical values are

average values evaluated under nominal conditions TA = 25 °C, VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.

parameter Symbol Min Typ Max Unit

Analog Integrated Circuit Device Data

12 Freescale Semiconductor

10XS4200

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS OF THE OUTPUT STAGE (HS0 AND HS1) (CONTINUED)

ESR0 Output Current Sensing Error (%, uncompensated(17) at output

current level (Sense ratio CSR0 selected):

TJ=-40 C

6.0 A

3.0 A

1.5 A

0.75 A

TJ=125C

6.0 A

3.0 A

1.5 A

0.75 A

TJ=25 to 125C

6.0 A

3.0 A

1.5 A

0.75 A

ESR0_ERR

-13

-12

-17

-31

-10

-9.0

-12

-19

-10

-9.0

-12

-22

–

9.0

ESR0 Output Current Sensing Error (% after offset compensation(18) at

output current level (Sense ratio CSR0 selected):

TJ=-40 C

6.0 A

3.0 A

1.5 A

0.75 A

TJ=125C

6.0 A

3.0 A

1.5 A

0.75 A

TJ=25 to 125C

6.0 A

3.0 A

1.5 A

0.75 A

ESR0_ERR(Comp)

-10

-9.0

-8.0

-9.0

-8.0

-9.0

–

9.0

8.0

9.0

8.0

9.0

Notes:

17. ESRx_ERR=(ICSNS_MEAS / ICSNS_MODEL) -1, with ICSNS_MODEL = (I(HS[x])+ I_LOAD_ERR_SYS) * CSRx , (I_LOAD_ERR_SYS defined above, see

section Current Sense Error Model). With this model, load current becomes: I(HS[x]) = ICSNS / CSRx - I_LOAD_ERR_SYS

18. See note (17), but with ICSNS_MEAS obtained after compensation of I_LOAD_ERR_RAND (see Activation and Use of Offset Compensation).

Further accuracy improvements can be obtained by performing a 1 or 2 point calibration.

Table 4. Static Electrical Characteristics (continued)

Unless specified otherwise: 8.0 V  VPWR  36 V, 3.0 V  VDD  5.5 V, - 40 C  TA  125 C, GND = 0 V. Typical values are

average values evaluated under nominal conditions TA = 25 °C, VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.

parameter Symbol Min Typ Max Unit

Analog Integrated Circuit Device Data

Freescale Semiconductor 13

10XS4200

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS OF THE OUTPUT STAGE (HS0 AND HS1) (CONTINUED)

ESR1 Output Current Sensing Error (%, uncompensated (19) at output

current level (Sense ratio CSR1 selected):

TJ=-40 C

1.5 A

TJ=125C

1.5 A

TJ=25 to 125C

1.5 A

ESR1_ERR

-15

-12

–

ESR1 Output Current Sensing Error (% (level) after offset

compensation(20) at output current level (Sense ratio CSR1 selected):

TJ=-40 C

1.5 A

0.5 A

0.25 A

0.15 A

TJ=125C

1.5 A

0.5 A

0.25 A

0.15 A

TJ=25 to 125C

1.5 A

0.5 A

0.25 A

0.15 A

ESR1_ERR(Comp)

-10

-11

-18

-29

-8.0

-10

-12

-16

-8.0

-10

-13

-21

–

8.0

ESR0 Output Current Sensing Error in parallel mode (%,

uncompensated(19)) at outputs Current level (Sense ratio CSR0 selected):

TJ=-40 C

6.0 A

3.0 A

TJ=125C

6.0 A

3.0 A

TJ=25 to 125C

6.0 A

3.0 A

ESR0_ERR_PAR

-10

-11

-8.0

–

8.0

Current Sense Clamping Voltage (condition: R(CSNS) > 10 kOhm) VCL(CSNS) 5.5 –7.5 V

Notes:

19. ESRx_ERR=(ICSNS_MEAS / ICSNS_MODEL) -1, with ICSNS_MODEL = (I(HS[x])+ I_LOAD_ERR_SYS) * CSRx , (I_LOAD_ERR_SYS defined above, see

section Current Sense Error Model). With this model, load current becomes: I(HS[x]) = ICSNS / CSRx - I_LOAD_ERR_SYS

20. See note (19), but with ICSNS_MEAS obtained after compensation of I_LOAD_ERR_RAND (see Activation and Use of Offset Compensation).

Further accuracy improvements can be obtained by performing a 1 or 2 point calibration.

Table 4. Static Electrical Characteristics (continued)

Unless specified otherwise: 8.0 V  VPWR  36 V, 3.0 V  VDD  5.5 V, - 40 C  TA  125 C, GND = 0 V. Typical values are

average values evaluated under nominal conditions TA = 25 °C, VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.

parameter Symbol Min Typ Max Unit

Analog Integrated Circuit Device Data

14 Freescale Semiconductor

10XS4200

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS OF THE OUTPUT STAGE (HS0 AND HS1) (CONTINUED)

OpenLoad detection Current threshold in OFF state (21) IOLD(OFF) 30 –100 A

OpenLoad Fault Detection Voltage Threshold (21) VOLD(THRES) 4.0 –5.5 V

OpenLoad detection Current threshold in ON state (see OpenLoad

Detection In On State (OL_ON)):

CSNS_ratio bit = 0

10XS4200FK

10XS4200BFK and 10XS4200BAFK

CSNS_ratio bit = 1 (fast slew rate SR[1:0] = 10 mandatory for this

function)

IOLD(ON)

120

5.0

300

7.0

600

Time period of the periodically activated OpenLoad in ON state detection

for CSNS_ratio bit = 1

tOLLED 105 150 195 ms

Output Shorted-to-VPWR Detection Voltage Threshold (channel in OFF

state)

VOSD(THRES) VPWR-1.2 VPWR-0.8 VPWR-0.4 V

Switch turn-on threshold for Negative Output Voltages (protects against

negative transients) - (measured at IOUT = 100 mA, Channel in OFF state)

10XS4200FK

10XS4200BFK and 10XS4200BAFK

VCL

-35

-38

–

-24

-32

Switch turn-on threshold for Negative Output Voltages difference from

one channel to the other in parallel mode - (measured at IOUT = 100 mA,

Channel in OFF state)

VCL

-2.0 –+2.0 V

Switching State (On/Off) discrimination thresholds VHS_TH 0.45*VPWR 0.5*VPWR 0.55*VPWR V

Shutdown temperature (Power MOSFET junction; 6.0 V < VPWR < 58 V) TSD 160 175 190 C

ELECTRICAL CHARACTERISTICS OF THE CONTROL INTERFACE PINS

Logic Input Voltage, High(22) VIH 2.0 –5.5 V

Logic Input Voltage, Low(22) VIL -0.3 –0.8 V

Wake-up Threshold Voltage (IN[0:1] and RSTB)(23) VWAKE 1.0 –2.2 V

Internal Pull-down Current Source (on inputs: CLOCK, SCLK and SI)(24) IDWN 5.0 –20 A

Internal Pull-up Current Source (input CSB)(25) IUP_CSB 5.0 –20 A

Internal Pull-up Current Source (input CONF[0:1])(26) IUP_CONF 25 –100 A

Capacitance of SO, FSB and FSOB pins in Tri-state CSO – – 20 pF

Internal Pull-down Resistance (RSTB and IN[0:1]) RDWN 125 250 500 k

Input Capacitance(27) CIN –4.0 12 pF

Notes:

21. Minimum required value of OpenLoad impedance for detection of OpenLoad in OFF-state: 200 k.(VOLD(THRES) = VHS @ IOLD(OFF))

22. High and low voltage ranges apply to SI, CSB, SCLK, RSTB, IN[0:1] and CLOCK input signals. The IN[0:1] signals may be derived from

VPWR and can tolerate voltages up to 58 V.

23. Voltage above which the device wakes up

24. Pull-down current-value for VSI > 0.8 V and VSCLK > 0.8 V and VCLOCK > 0.8 V.

25. Pull-up current-value for VCSB < 2.0 V. CSB has an internal pull-up current source connected to VDD.

26. Pins CONF[0:1] are connected to an internal current source, connected itself to an internal voltage regulator (VREG ~ 3.0 V).

27. Input capacitance of SI, CSB, SCLK, RSTB, IN[0:1], CONF[0:1], and CLOCK pins. This parameter is guaranteed by the manufacturing

process but is not tested in production.

Table 4. Static Electrical Characteristics (continued)

Unless specified otherwise: 8.0 V  VPWR  36 V, 3.0 V  VDD  5.5 V, - 40 C  TA  125 C, GND = 0 V. Typical values are

average values evaluated under nominal conditions TA = 25 °C, VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.

parameter Symbol Min Typ Max Unit

Analog Integrated Circuit Device Data

15 Freescale Semiconductor

10XS4200

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS OF THE CONTROL INTERFACE PINS (CONTINUED)

SO High-state Output Voltage

(IOH = 1.0 mA)

VSOH

VDD-0.4 – –

SYNC, SO, FSOB and FSB Low-state Output Voltage

(IOL = -1.0 mA)

VSOL

– – 0.4

SYNC, SO, CSNS, FSOB and FSB Tri-state Leakage Current:

(0.0 V < V(SO) < VDD, or V(FS) or V(SYNC) = 5.5 V, or V(FSO) = 36 V

or V(CSNS) = 0 V

ISO(LEAK)

- 2.0 0.0 2.0

A

CONF[0:1] Required values of the External Pull-down Resistor

- Lighting applications

- DC motor applications

RCONF

1.0

–

Infinite

k

Table 4. Static Electrical Characteristics (continued)

Unless specified otherwise: 8.0 V  VPWR  36 V, 3.0 V  VDD  5.5 V, - 40 C  TA  125 C, GND = 0 V. Typical values are

average values evaluated under nominal conditions TA = 25 °C, VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.

parameter Symbol Min Typ Max Unit

Analog Integrated Circuit Device Data

16 Freescale Semiconductor

10XS4200

ELECTRICAL CHARACTERISTICS

DYNAMIC ELECTRICAL CHARACTERISTICS

Table 5. Dynamic Electrical Characteristics

Unless specified otherwise: 8.0 V  VPWR  36 V, 3.0 V  VDD  5.5 V, - 40 C  TA  125 C, GND = 0 V. Typical values are

average values evaluated under nominal conditions TA = 25 °C,VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.

Parameter Symbol Min Typ Max Unit

OUTPUT VOLTAGE SWITCHING CHARACTERISTICS

Rising and Falling edges medium slew rate (SR[1:0] = 00)(28)

10XS4200FK and 10XS4200BFK

VPWR = 16 V

VPWR = 28 V

VPWR = 36 V

10XS4200BAFK

VPWR = 16 V

VPWR = 28 V

VPWR = 36 V

SRR_00

SRF_00

0.164

0.28

0.34

0.25

0.45

0.5

–

0.65

0.79

0.90

1.1

1.4

1.5

V/s

Rising and Falling edges low slew rate (SR[1:0] = 01)(28)

10XS4200FK and 10XS4200BFK

VPWR = 16 V

VPWR = 28 V

VPWR = 36 V

10XS4200BAFK

VPWR = 16 V

VPWR = 28 V

VPWR = 36 V

SRR_01

SRF_01

0.081

0.14

0.17

0.125

0.225

0.25

–

0.32

0.395

0.45

0.55

0.7

0.75

V/s

Rising and Falling edges high slew rate / SR[1:0] = 10)(28)

10XS4200FK and 10XS4200BFK

VPWR = 16 V

VPWR = 28 V

VPWR = 36 V

10XS4200BAFK

VPWR = 16 V

VPWR = 28 V

VPWR = 36 V

SRR_10

SRF_10

0.29

0.55

0.68

0.5

0.9

1.0

–

1.30

1.58

1.80

2.2

2.8

3.0

V/s

Rising/Falling edge slew rate matching (SRR /SRF)

16 V < VPWR < 36 V

SR

0.75 1.0 1.2

Edge slew rate difference from one channel to the other in parallel mode(28)

16 V < VPWR < 36 V

SR[1:0] = 00

SR[1:0] = 01

10XS4200FK and 10XS4200BFK

SR[1:0] = 10

10XS4200BAFK

SR[1:0] = 10

SR

-0.1

-0.06

-0.14

-0.2

0.0

+0.1

+0.06

+0.14

0.2

V/s

Analog Integrated Circuit Device Data

Freescale Semiconductor 17

10XS4200

ELECTRICAL CHARACTERISTICS

DYNAMIC ELECTRICAL CHARACTERISTICS

SWITCHING CHARACTERISTICS (CONTINUED)

Output Turn-ON and Turn-OFF Delays (medium slew rate: SR[1:0] = 00)

16 V < VPWR < 36 V(29)

10XS4200FK and 10XS4200BFK

10XS4200BAFK

DLY_00

–

128

120

s

Output Turn-ON and Turn-OFF Delays (medium slew rate / SR[1:0] = 01)

16 V < VPWR < 36 V(29)

10XS4200FK and 10XS4200BFK

10XS4200BAFK

DLY_01

–

245

240

s

Output Turn-ON and Turn-OFF Delays (medium slew rate / SR[1:0] = 16)

16 V < VPWR < 36 V(29)

10XS4200FK and 10XS4200BFK

10XS4200BAFK

DLY_10

–

s

Turn-ON and Turn-OFF Delay time matching (t

DLY(ON) - t

DLY(OFF))

PWM = 400 Hz, 16 V < VPWR < 36 V, duty cycle on IN[x] = 50 %, SR[1:0] = 00

t

RF_00

-25 0.0 25

s

Turn-ON and Turn-OFF Delay time matching (t

DLY(ON) - t

DLY(OFF))

PWM = 200 Hz, 16 V < VPWR < 36 V, duty cycle on IN[x] = 50 %, SR[1:0] = 01

10XS4200FK and 10XS4200BAFK

10XS4200BFK

t

RF_01

-50

-90

0.0

s

Turn-ON and Turn-OFF Delay time matching (t

DLY(ON) - t

DLY(OFF))

PWM = 1.0 kHz, 16 V < VPWR < 36 V, duty cycle on IN[x] = 50 %, SR[1:0] = 10

t

RF_10

-13 0.0 13

s

Notes

28. Rising and Falling edge slew rates specified for a 20 to 80% voltage variation on a 10 resistive load (see Figure 4).

29. Turn-on delay time measured as delay between a rising edge of the channel control signal (IN[0 : 1] = 1 or CSB) and the associated rising

edge of the output voltage up to: VHS[0 : 1] = VPWR / 2 (where RL = 5.0). Turn-OFF delay time is measured as time between a falling

edge of the channel control signal (IN[0 : 1] = 0 or CSB pin) and the associated falling edge of the output voltage up to the instant at which:

VHS[0 : 1] = VPWR / 2 (RL = 5.0 )

Table 5. Dynamic Electrical Characteristics (continued)

Unless specified otherwise: 8.0 V  VPWR  36 V, 3.0 V  VDD  5.5 V, - 40 C  TA  125 C, GND = 0 V. Typical values are

average values evaluated under nominal conditions TA = 25 °C,VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.

Parameter Symbol Min Typ Max Unit

Analog Integrated Circuit Device Data

18 Freescale Semiconductor

10XS4200

ELECTRICAL CHARACTERISTICS

DYNAMIC ELECTRICAL CHARACTERISTICS

SWITCHING CHARACTERISTICS (CONTINUED)

Delay time difference from one channel to the other in parallel mode(30)

16 V < VPWR < 36 V

SR[1:0] = 00

10XS4200FK

10XS4200BFK and 10XS4200BAFK

SR[1:0] = 01

10XS4200FK

10XS4200BFK and 10XS4200BAFK

SR[1:0] = 10

10XS4200FK

10XS4200BFK and 10XS4200BAFK

t(DLY)

-21

-25

-40

-50

-11

-12

0.0

s

Fault Detection Delay Time(31) tFAULT –5.0 8.0 s

Output Shutdown Delay Time(32) tDETECT –7.0 12 s

Current sense output settling Time for SR[1:0] = 00 (medium slew rate) (33)

10XS4200FK and 10XS4200BFK

16 V < VPWR < 36 V

10XS4200BAFK

16 V < VPWR < 36 V

CSNSVAL_00

0.0

–

210

200

s

Current sense output settling Time for SR[1:0] = 01(low slew rate) (33)

10XS4200FK and 10XS4200BFK

16 V < VPWR < 36 V

10XS4200BAFK

16 V < VPWR < 36 V

CSNSVAL_01

0.0

–

310

300

s

Current sense output settling Time for SR[1:0] = 10 (high slew rate) (33)

10XS4200FK and 10XS4200BFK

16 V < VPWR < 36 V

10XS4200BAFK

16 V < VPWR < 36 V

CSNSVAL_10

0.0

–

175

165

s

SYNC output signal delay for SR[1:0] = 00 (medium SR) (33)

10XS4200FK

10XS4200BFK

10XS4200BAFK

SYNCVAL_00

–

150

160

130

s

Notes:

30. Rising and Falling edge slew rates specified for a 20 to 80% voltage variation on a 10 resistive load (see Figure 4).

31. Time required to detect and report the fault to the FSB pin.

32. Time required to switch off the channel after detection of overtemperature (OT), overcurrent (OC), SC or UV error (time measured

between start of the negative edge on the FSB pin and the falling edge on the output voltage until V(HS[0:1)) = 50% of VPWR

33. Settling time ( = t

CSNSVAL_xx), SYNC output signal delay ( = t

SYNCVAL_xx) and Read-out delay ( = t

SYNREAD_xx) are defined for a stepped

load current (100 mA< I(LOAD)<IOCLX A FOR CSNS_RATIO_S = 1, AND 300 mA< I(LOAD)<IOCLX A_0 FOR CSNS_RATIO_S = 0). (see

Figure 9 and Output Current Monitoring (CSNS))

Table 5. Dynamic Electrical Characteristics (continued)

Unless specified otherwise: 8.0 V  VPWR  36 V, 3.0 V  VDD  5.5 V, - 40 C  TA  125 C, GND = 0 V. Typical values are

average values evaluated under nominal conditions TA = 25 °C,VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.

Parameter Symbol Min Typ Max Unit

Analog Integrated Circuit Device Data

Freescale Semiconductor 19

10XS4200

ELECTRICAL CHARACTERISTICS

DYNAMIC ELECTRICAL CHARACTERISTICS

SYNC output signal delay for SR[1:0] = 01 (low SR) (34)

10XS4200FK

10XS4200BFK

10XS4200BAFK

SYNCVAL_01

–

290

320

250

s

SYNC output signal delay for SR[1:0] = 10 (high SR) (34)

10XS4200FK

10XS4200BFK

10XS4200BAFK

SYNCVAL_10

–

s

Recommended sync_to_read delay SR[1:0] = 00 (medium slew rate) (34)

10XS4200FK and 10XS4200BFK

10XS4200BAFK

SYNREAD_00

–

200

150

µs

Recommended sync_to_read delay SR[1:0] = 01 (low slew rate) (34)

10XS4200FK and 10XS4200BFK

10XS4200BAFK

SYNREAD_01

–

200

150

µs

Recommended sync_to_read delay SR[1:0] = 10 (high slew rate) (34)

10XS4200FK and 10XS4200BFK

10XS4200BAFK

SYNREAD_10

–

200

150

µs

Upper overcurrent threshold duration tOCH1

tOCH2

6.0

12.0

8.6

17.2

11.2

22.4

Medium overcurrent threshold duration (CONF = 0; Lighting Profile) tOCM1_L

tOCM2_L

137

178

Medium overcurrent threshold duration (CONF = 1; DC motor Profile) tOCM1_M

tOCM2_M

245

137

350

178

455

FREQUENCY & PWM DUTY CYCLE RANGES (35)(protections fully operational, see Protective Functions)

Switching Frequency range - Direct Inputs fCONTROL 0.0 –1000 Hz

Switching Frequency range - External clock with internal PWM (recommended) fPWM_EXT 20 –1000 Hz

Switching Frequency range - Internal clock with internal PWM (recommended) fPWM_INT 60 –1000 Hz

Duty Cycle range RCONTROL 0.0 –100 %

Notes:

34. Settling time ( = t

CSNSVAL_xx), SYNC output signal delay ( = t

SYNCVAL_xx) and Read-out delay ( = t

SYNREAD_xx) are defined for a stepped

load current (100 mA< I(LOAD)<IOCLX A FOR CSNS_RATIO_S = 1, AND 300 mA< I(LOAD)<IOCLX A_0 FOR CSNS_RATIO_S = 0). (see

Figure 9 and Output Current Monitoring (CSNS))

35. In Direct Input mode, the lower frequency limit is 0 Hz with RSTB=5.0 V and 4.0 Hz with RSTB=0 V. Duty-cycle applies to instants at which

VHS = 50% VPWR. For low duty cycle values, the effective value also depends on the value of the selected slew rate.

Table 5. Dynamic Electrical Characteristics (continued)

Unless specified otherwise: 8.0 V  VPWR  36 V, 3.0 V  VDD  5.5 V, - 40 C  TA  125 C, GND = 0 V. Typical values are

average values evaluated under nominal conditions TA = 25 °C,VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.

Parameter Symbol Min Typ Max Unit

Analog Integrated Circuit Device Data

20 Freescale Semiconductor

10XS4200

ELECTRICAL CHARACTERISTICS

DYNAMIC ELECTRICAL CHARACTERISTICS

AVAILABILITY DIAGNOSTIC FUNCTIONS OVER DUTY-CYCLE AND SWITCHING FREQUENCY

(protection & diagnostics both fully operational, see Diagnostic Features for the exact boundary values)

Available Duty Cycle Range, fPWM = 1.0 kHz high slew rate (36)

OL_OFF

OL_ON

RPWM_1K_H

0.0

–

100

Available Duty Cycle Range, fPWM = 400 Hz, medium slew rate mode(36)

OL_OFF

OL_ON

RPWM_400_M

0.0

–

100

Available Duty Cycle Range, fPWM = 400 Hz, high slew rate mode (36)

OL_OFF

OL_ON

RPWM_400_H

0.0

–

100

Available Duty Cycle Range, fPWM = 200 Hz, low slew rate mode(36)

OL_OFF

OL_ON

RPWM_200_L

0.0

–

100

Available Duty Cycle Range, fPWM = 200 Hz, medium slew rate mode(36)

OL_OFF

OL_ON

RPWM_200_M

0.0

–

100

Available Duty Cycle Range, fPWM = 100 Hz in low slew rate mode(36)

OL_OFF

OL_ON

RPWM_100_L

0.0

8.0

0.0

–

100

Deviation of the internal clock PWM frequency after Calibration(37) AFPWM(CAL) -10 –+10 %

Default output frequency when using an uncalibrated oscillator fPWM(0) 280 400 520 Hz

Minimal required Low Time during Calibration of the Internal Clock through CSB t

CSB(MIN) 1.0 1.5 2.0 s

Maximal allowed Low Time during Calibration of the Internal Clock through CSB t

CSB(MAX) 70 100 130 s

Recommended external Clock Frequency Range (external clock/PWM Module) fCLOCK 15 –512 kHz

Upper detection threshold for external Clock frequency monitoring f

CLOCK(MAX) 512 730 930 kHz

Lower detection threshold for external Clock frequency monitoring f

CLOCK(MIN) 5.0 7.0 10 kHz

Notes:

36. The device can be operated outside the specified duty cycle and frequency ranges (basic protective functions OC, SC, UV, OV, and OT

remain active), but the availability of the diagnostic functions OL_ON, OL_OFF, and OS is affected. OL_OFF duty-cycle range is

guaranteed by design characterization.

37. Values guaranteed from 60 Hz to 1.0 kHz (recommended switching frequency range).

38. Only when the WD_dis bit set to logic [0] (default). Watchdog timeout defined from the rising edge on RST to rising edge HS[0,1]

39. Values were obtained after lab characterization

Table 5. Dynamic Electrical Characteristics (continued)

Unless specified otherwise: 8.0 V  VPWR  36 V, 3.0 V  VDD  5.5 V, - 40 C  TA  125 C, GND = 0 V. Typical values are

average values evaluated under nominal conditions TA = 25 °C,VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.

Parameter Symbol Min Typ Max Unit

Analog Integrated Circuit Device Data

Freescale Semiconductor 21

10XS4200

ELECTRICAL CHARACTERISTICS

DYNAMIC ELECTRICAL CHARACTERISTICS

TIMING: SPI PORT, IN[0]/ IN[1] SIGNALS & AUTORETRY

Required Low time allowing delatching or triggering sleep mode (direct inputs) tIN 175 250 325 ms

Watchdog Timeout for entering Fail-safe Mode due to loss of SPI contact(40) t

WDTO 217 310 400 ms

Auto-Retry Repetition Period (when activated):

Auto_period bits = 00

Auto_period bits = 01

Auto_period bits = 10

Auto_period bits = 11

tAUTO_00

tAUTO_01

tAUTO_10

tAUTO_11

105

52.5

26.2

13.1

150

37.5

17.7

195

97.5

47.8

24.4

GND PIN TEMPERATURE SENSING FUNCTION

Thermal Prewarning Detection Threshold(41) TOTWAR 110 125 140 °C

Temperature Sensing output voltage @ TA = 25 °C (470  < RCSNS < 10 k TFEED 918 1078 1238 mV

Gain Temperature Sensing output @ TA = 25 °C (470  < RCSNS < 10 k(41) DTFEED 10.7 11.1 11.5 mV/°C

Temperature Sensing Error, range [-40 °C, 150 °C], default(41) TFEED_ERROR -15 –+15 °C

Temperature Sensing Error, [-40 °C, 150 °C] after 1 point calibration @ 25 °C(41) TFEED_ERROR

_CAL

-5.0 –+5.0 °C

Notes:

40. Only when the WD_dis bit set to logic [0] (default). Watchdog timeout defined from the rising edge on RST to rising edge HS[0,1]

41. Values were obtained after lab characterization

Table 5. Dynamic Electrical Characteristics (continued)

Unless specified otherwise: 8.0 V  VPWR  36 V, 3.0 V  VDD  5.5 V, - 40 C  TA  125 C, GND = 0 V. Typical values are

average values evaluated under nominal conditions TA = 25 °C,VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.

Parameter Symbol Min Typ Max Unit