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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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AMPLIFIERS - LINEAR & POWER - SMT
HMC451LP3 / 451LP3E
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 18 GHz
v00.0808
General Description
Features
Functional Diagram
The HMC451LP3(E) is an efficient GaAs PHEMT
MMIC Medium Power Amplier housed in a leadless
RoHS compliant SMT package. Operating between
5 and 18 GHz, the amplier provides 18 dB of gain,
+21 dBm of saturated power and 18% PAE from a
single +5V supply. This 50 Ohm matched amplier
does not require any external components and the
RF I/O’s are DC blocked, making it an ideal linear
gain block or LO driver for HMC mixers. The
HMC451LP3(E) eliminates the need for wire bonding,
and allows the use of surface mount manufacturing
techniques.
Gain: 18 dB
Saturated Power: +21 dBm @ 18% PAE
Output IP3: +28 dBm
Single Supply: +5V @ 120 mA
50 Ohm Matched Input/Output
16 Lead 3x3mm SMT Package: 9mm
Electrical Specications, TA = +25° C, Vdd1 = Vdd2 = +5V
Typical Applications
The HMC451LP3(E) is ideal for:
• Microwave Radio & VSAT
• Military & Space
• Test Equipment & Sensors
• Fiber Optics
• LO Driver for HMC Mixers
Parameter Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 5 - 16 16 - 18 GHz
Gain 15 18 12.5 16 dB
Gain Variation Over Temperature 0.02 0.03 0.02 0.03 dB/ °C
Input Return Loss 13 13 dB
Output Return Loss 12 8 dB
Output Power for 1 dB
Compression (P1dB) 16.5 19.5 16 19 dBm
Saturated Output Power (Psat) 21 20 dBm
Output Third Order Intercept (IP3) 28 25 dBm
Noise Figure 7 7 dB
Supply Current (Idd) 120 150 120 150 mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
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Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
P1dB vs. Temperature Psat vs. Temperature
HMC451LP3 / 451LP3E
v00.0808
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 18 GHz
-25
-15
-5
5
15
25
4 6 8 10 12 14 16 18 20
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
4 6 8 10 12 14 16 18 20
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
4
8
12
16
20
24
28
4 6 8 10 12 14 16 18 20
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
24
28
4 6 8 10 12 14 16 18 20
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
4 6 8 10 12 14 16 18 20
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
4
8
12
16
20
24
4 6 8 10 12 14 16 18 20
+25C
+85C
-40C
GAIN (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9
9 - 3
AMPLIFIERS - LINEAR & POWER - SMT
Power Compression @ 10 GHz
Output IP3 vs. Temperature Noise Figure vs. Temperature
Gain, P1dB & PSAT
vs. Supply Voltage @ 11 GHz Reverse Isolation vs. Temperature
Power Compression @ 17 GHz
HMC451LP3 / 451LP3E
v00.0808
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 18 GHz
0
4
8
12
16
20
24
-18 -14 -10 -6 -2 2 6
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
4
8
12
16
20
24
-18 -14 -10 -6 -2 2 6
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
20
22
24
26
28
30
32
4 6 8 10 12 14 16 18 20
+25C
+85C
-40C
IP3 (dBm)
FREQUENCY (GHz)
2
4
6
8
10
12
4 6 8 10 12 14 16 18 20
+25C
+85C
-40C
NOISE FIGURE (dB)
FREQUENCY (GHz)
16
17
18
19
20
21
22
4.5 5 5.5
Gain
P1dB
Psat
GAIN (dB), P1dB (dBm), Psat (dBm)
Vdd (V)
-60
-50
-40
-30
-20
-10
0
4 6 8 10 12 14 16 18 20
+25C
+85C
-40C
ISOLATION (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
9
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Absolute Maximum Ratings
Drain Bias Voltage (Vdd1 = Vdd2) +5.5V
RF Input Power (RFIN)(Vdd = +5Vdc) +10 dBm
Channel Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 12.8 mW/°C above 85 °C) 0.83 W
Thermal Resistance
(channel to ground paddle) 78 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
Vdd1 = Vdd2 (V) Idd1 + Idd2 (mA)
+4.5 120
+5.0 122
+5.5 124
Note: Amplier will operate over full voltage range shown above
Typical Supply Current vs. Vdd1 = Vdd2
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC451LP3 / 451LP3E
v00.0808
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 18 GHz
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC451LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] 451
XXXX
HMC451LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 451
XXXX
[1] Max peak reow temperature of 235 °C
[2] Max peak reow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9
9 - 5
AMPLIFIERS - LINEAR & POWER - SMT
Pin Descriptions
Pin Number Function Description Interface Schematic
1, 2, 4 - 9, 11,
12, 14, 16 N/C This pin may be connected to RF/DC ground.
Performance will not be affected.
3 RFIN This pin is AC coupled
and matched to 50 Ohms.
10 RFOUT This pin is AC coupled
and matched to 50 Ohms.
13 Vdd2 Power Supply Voltage for the amplier. External bypass
capacitors of 100 pF, 1,000 pF and 2.2 µF are required.
15 Vdd1 Power Supply Voltage for the amplier. External bypass
capacitors of 100 pF, 1,000 pF and 2.2 µF are required.
GND Package bottom must be connected to RF/DC ground.
Component Value
C1, C2 100 pF
C3, C4 1,000 pF
C5, C6 2.2 µF
Application Circuit
HMC451LP3 / 451LP3E
v00.0808
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 18 GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
9
9 - 6
Evaluation PCB
The circuit board used in the application should
use RF circuit design techniques. Signal lines
should have 50 Ohm impedance while the package
ground leads and exposed paddle should be con-
nected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
List of Materials for Evaluation PCB 120202 [1]
Item Description
J1 - J2 PCB Mount SMA Connector
J3 - J5 DC Pin
C1, C2 100 pF Capacitor, 0402 Pkg.
C3, C4 1000 pF Capacitor, 0603 Pkg.
C5, C6 2.2 µF Capacitor, Tantalum
U1 HMC451LP3(E) Amplier
PCB [2] 120201 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Arlon 25FR
HMC451LP3 / 451LP3E
v00.0808
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 18 GHz
