7 peer amnesseemmnere a a eee : 964 142 SAMSUNG SEMICONDUCTOR INC sss 98D_-05114 DI3I-y , cee AG pe Mi raeyiye goosiLY 7 I hoe ~~ ALCHANNEL IRF330/331/332/333 POWER MOSFETS FEATURES ! i e Low Rpsjon) ; 10-3 Improved inductive ruggedness Fast switching times ; } Rugged polysilicon gate cell structure e Low input capacitance i e Extended safe operating area ; e Improved high temperature reliabllity | e TO-3 package (Standard) ! i PRODUCT SUMMARY ' J Part Number Vos Rosion) Ip D ' IRF330 400V 1.02 5.5A IRF331 , 350V 1.09 5.5A IRF332 400V 1.562 4.5A G : Ss IRF333 350V . 1.62 4.5A MAXIMUM RATINGS Characteristic Symbol IRF330 {AF331 IRF332 IRF333 Unit Drain-Source Voltage (1) Voss 400 350 400 350 Vde Drain-Gate Voltage (Ras=1.OMM) (1) Vocr 400 350 400 350 Vdce t Gate-Source Voltage Ves +20 Vde Continuous Drain Current Tc=25C le 5.5 .5 4.5 4.5 Adc Continuous Drain Current Tc=100C Ip 3.5 3.5 3.0 3.0 Adc Drain CurrentPulsed (3) Ipm 22 22 18 18 Adc Gate CurrentPulsed lon 41.5 Adc \ Total Power Dissipation @ Tc=25C Pp 75 Watts Derate above 25C 0.6 Wie Operating and Storage _ Junction Temperature Range Ty, Tstg 55 to 150 Cc Maximum Lead Temp. for Soldering . . Purposes, 1/8 from case for 5 seconds Th 300 c Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300pus, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature be SAMSUNG SEMICONDUCTOR 113 da a po ag * 7964142 SAMS ING SEMTe CANDHATOAR DE, P9by Le oogsi15 4 vee me N-CHANNEL ve ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise specified) Characteristic Symbol} Type |Min| Typ] Max [Units Test Conditions 290490] | | v [aseov Drain-Source Breakdown BVpss Vottage IRF331 . IRF333 350, } Vo |ip= 250A Gate Threshold Voltage | Vasun | ALL 12.0] | 4.0 | Vo |Vps=Ves, lo=250pA Gate-Source Leakage Forward| fess ALL | { | 100] nA |Ves=20V Gate-Source Leakage Reverse| !ess ALL | | |-100] nA |Vas=-20V Zero Gate Voltage loss ALL L477 250 | yA |Vps=Max. Rating, Vas=OV Drain Current | | 1000] pA |Vps=Max. RatingX0.8, Vas=OV, To= 125C . IRF330 , On-State Drain-Source inF33i|| | 7 A : Ibjon) Vps>Ipion)<Rosion) max.. Ves= 10V Current (2) IRF332 A inF333|*5| | so Esso] _ loo] 10 | 0 Static Drain-Source On-State Rosien) . Ves=10V, Ip=3.0A Resistance (2) IRF332 IRE3331 ~~ 1.0] 1.6 Q Forward Transconductance (2}| gts ALL (3.0/4.4) 8 | Vos>Ipion)*Rosion) max.. lp=3.0A Input Capacitance Cies ALL | |730/] 900 | pF Output Capacitance Coss ALL | |100] 300 | pF |Ves=O0V, Vos=25V, f=1.0MHz Reverse Transfer Capacitance} Crss ALL | | 50] 80 pF Turn-On Delay Time tajon) | ALL | | | 30 | ns Rise Time t | ALL | ~| | 36 | ne {o0=0.5BVoss, lo=3.0A, Zo=15 0 (MOSFET switching times are essentially Turn-Off Delay Time taom | ALL | | | 55 | MS lindependent of operating temperature.) Fall Time tt ALL ||J| 35 ns Total Gate Charge : (Gate-Source Plus Gate-Drain}| Co | ALL | | 18| 30 | RC lvas=toV, In=7.0A, Vos=0.8 Max. Rating Gate charge is essentially independent of /4o] ( Gate-Source Charge gs ALL nc operating temperature. ) Gate-Drain (Miller) Charge Qga ALL |/]14) nc THERMAL RESISTANCE Junction-to-Case . Rinc | ALL | | | 1.67 | Kw Case-to-Sink Rines ALL {| |0.1| | K/W |Mounting surface flat, smooth, and greased Junction-to-Ambient Riva | ALL | | | 30 | K/W [Free Air Operation Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300ys, Duty Cycle<2% - (3) Repetitive rating: Pulse width limited by max. junction temperature 98D 05115 OT-Ba-lt GEE samsunc SEMICONDUCTOR i114 i 7! UNG SEMICONDUCTOR INC 980 05116 D-=F-B4-1 W > NCHANNEL * 98 DER e4n42 goose o IRF330/331/332/333 POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic Symbol] Type |Min|Typ| Max /Units Test Conditions IRF8301_ | _|e5 | 4 Continuous Source Current Is IRF331 , Body Diode): . (Body Diode) IRF332) | 4.5 | A {Modified MOSFET symbol 0 IRF333 . . showing the integral G : IRF330] of 22 A. |feverse P-N junction rectifier Ss Pulse Source Current lem IRF331 (Body Diode) (3) |IRF332] _) | 4g | a (RF333 , IRFS31 |]] 16 | V [Tc=25C, Is=5.5A, Ves=OV Diode Forward Voltage (2) Vsp IRF332 . iars3a| | | 1-8 | V |To=25C, is=4.5A, Ves=OV Reverse Recovery Time tre ALL | |600; | ns |Ty=150C, tp=5.5A, dip/dt=100A/ys Notes: (1) Ty=25C to 150C (2) (3) Repetitive rating: Pulse width limited by max. junction temperature Pulse test: Pulse width<300ps, Duty Cyciex2% 300 i wu s = 5 & 3 Zz z 4 . 0 7100 160 260 250 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) v . Typical Output Characteristics : < & e 5 z = a s Vos, ORAIN-TO-SOURCE VOLTAGE {VOLTS} Typical Saturation Characteristics fp, DRAIN CURRENT (AMPERES) Jp, DRAIN CURRENT (AMPERES) Te ~55C 1 2 4 5 6 7 Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) Typical Transfer Characteristics 330.2 20 60 10 20 50 100 200 00 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Maximum Safe Operating Area ce SAMSUNG SEMICONDUCTOR 115 ee j } ae pte q 4 ao Zctlinsc, NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT) ao: > gts, TRANSCONDUCTANCE (SIEMENS) \ nN 1.25 2 > = o > uu o a a + (NORMALIZED) BVoss, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE 2 a ~ a . __ 7964142 | a SAMSUNG. SEMICONDUCTOR INC. DE BM ?db4uL4e2 O005117? 2 IRF330/331/332/333 oO 5 10-7 2 2 5 107 2 Effactt Maximum E jant Thermal lon, REVERSE DRAIN CURRENT (AMPERES) 2 4 10 Ip, ORAIN CURRENT (AMPERES) Typical Transcounductance Vs. Drain Current Rpsjon), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 0 40 1 160 Ty, JUNCTION TEMPERATURE (C) Breakdown Voltage Vs. Temperature 5 11, SQUARE WAVE PULSE OURATION (SECONDS) Tr: a functi 98D 05117. DT-BA-I | AK CHANNEL - POWER MOSFETS wi _| 1. Duly Fector B=! _ Per Und Base*Rryc 1.67 Deg CW TarTe=Pou Zruc (l) 5 10 2 5 1 2 5 iD to-Case Vs. Pulse Duration Vsp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Typical SourceDrain Diode Forward Voltage ~40 40 80 120 160 Ty, JUNCTION TEMPERATURE (?C) Normalized On-Resistance Vs. Temperature ce SAM SUNG SEMICONDUCTOR | 1_984142 SAMSUNG SEMICONDUCTOR, ING. 98D 05118 oT BAA 298 DEP raesaye ooosizea 4 T- N-CHANNEL ~ IRF330/331/332/333 POWER MOSFETS _ ~. C, CAPACITANCE (pF) Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) 40 50 40 Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Typical Capacitance Vs. Drain to Source Voltage Typical Gate Charge Vs. Gate-To-Source Voltage a = xz 9 8 2 rs & x & & a = g < z Ee @ 3 s & oO B z S$ = e a Zz Rost 6 4 2 Ops DURATION INITIAL Tj=25C: = 5 {HEATING EFFECT OF 2 2 PULSE IS MiNCMAL} 2 a cz Q 5 10 1 20 25 400 125 . To. ORAIN CURRENT (AMPERES) . ile, CASE TEMPERATURE (C) u Typical On-Resistance Vs. Drain Current Maximum Drain Current Vs. Case Temperature Pp, POWER DISSIPATION (WATTS) Tc, CASE TEMPERATURE (C) Power Vs. Temperature Derating Curve om Rag SAMSUNG SEMICONDUCTOR . as