11640-822 - ON Semiconductor L.L.C.

American Microsystems, Inc. reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. 2.28.02

FS6205

FS6205FS6205

FS6205

VCXO Clock Gener ator IC

VCXO Clock Gener ator ICVCXO Clock Gener ator IC

VCXO Clock Gener ator IC

ISO9001

ISO9001ISO9001

ISO9001

1.0 Features

• On-chip tunable voltage-controlled crystal oscillator

circuitry (VCXO) allows precise system frequency

tuning (pull range typically 300ppm)

• Uses inexpensive fundamental-mode crystals

• Integrated phase-locked loops (PLL) multiply VCXO

frequency to the higher system frequencies needed

• 3.3V supply voltage available (contact factory for 5

volt ver s io ns )

• Small circuit board footprint (8-pin 0.150″ SOIC)

• Custom frequency selections available - contact your

local AMI Sales Representative for more information

Figure 1: Pin Configuration

1 8

XIN

VDD

XTUNE

VSS

CLK

XOUT

FS6205

8-pin (0.150″) SOIC

2.0 Description

The FS6205 is a monolithic CMOS clock generator IC

designed to m inim ize cost a nd com ponen t count in digi tal

video/audio systems.

An on-chip voltage-controlled crystal oscillator (VCXO)

permits the reference frequency (or output frequency) to

be tuned to match other frequencies present in the sys-

tem.

Phase- lock ed loops are use d to ge nerat e precis e output /

reference frequency ratios. See Table 1 for information

on the frequency ratios programmed into each version of

the FS6205.

Table 1: Version Information

DEVICE VDD

(nom) FREF

(MHz) FS MS CLK

(MHz)

00 27.000

(REF * 2)

13.500 0174.175824175…

(REF * 500 / 91)

10 27.027

(REF * 2)

FS6205-01 3.3

13.5135 1174.580835443…

(REF * 436 / 79)

NOTE: Contact AMI for custom versions

Figure 2: Block Diagram

VCXO

FS6205

CLK

PLL A

XOUT

XIN

XTUNE

MUX

PLL B

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Clock Generator IC

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Table 2: Pin Descriptions

Key: AI = Analog Input; AO = Analog Output; DI = Digital Input; DIU = Input with Internal Pull-Up; DID = Input with Internal Pull-Down; DIO = Digital Input/Output; DI-3 = Three-Level Digital Input,

DO = Digital Output; P = Power/Ground; # = Active Low pin

PIN TYPE NAME DESCRIPTION

1 AI XIN VCXO Crystal Feedback

2 P VDD Power Supply (+3.3V nominal)

3 AI XTUNE VCXO Tune

4 P VSS Ground

5 DO CLK Clock Output

6DI

UFS Frequency Select Input (changes P LL Frequencies)

7DI

UMS Multiplexer Select Input (chooses PLL A or PLL B)

8 A O XOUT VCXO Crystal Drive

3.0 Functional Bl ock Descripti on

3.1 Phase-Locked Loops (PLL)

The on-chip PLLs are a standard frequency- and phase-

lock ed loop archi tec tur e. The PLL multiplies the refer enc e

oscillator to the desired frequency by a ratio of integers.

The frequency multiplication is exactly that specified by

the integer ratios .

3.2 Voltage-Controlled Crystal

Oscillator (VCXO)

The VCXO provides a tunable, low-jitter frequency refer-

ence for the rest of the FS6205 system components.

Loading capacitance for the crystal is internal to the

FS6205. No external components (other than the crystal

resonator itself) are required for operation of the VCXO.

Continuous fine-tuning of the VCXO frequency is accom-

plished by varying the voltage on the XTUNE pin. The

total change (from one extreme to the other) in effective

loading capacitance is 12pF nominal (i.e from 35pF to

13pF).

“Pulling” of the crystal oscillation frequency, is accom-

plished by altering the effective load capacitance pre-

sented to the crystal by the oscillator circuit. The actual

amount that c hanging th e load capac itance alt ers the os-

cillator fr equenc y will be d ependent o n the char acteristic s

of the crystal as well as the oscillator circuit itself.

Specifically, the m otional capacitance of the cr ystal (usu-

ally referr ed to by cr ystal m anufactur ers as C1), the st atic

capacitance of the crystal (C0), and the load capacitance

(CL) of the oscillator determine the “warping” or “pulling”

capability of the crystal in the oscillator circuit.

A simple formula to obtain the pulling capability of a

crystal oscillator is:

()

()()

CCCC CCC

ppmf LL

1020

121

210

)( +×+× ×−×

=∆

where CL1 and CL2 are the two extremes of the applied

load capacitance.

EXAMPLE: A crystal with the following parameters is

used. With C1 = 0.02 pF, C0 = 5 pF, CL1 = 13 pF, and CL2 =

35pF, the tuning range between extreme settings of

XTUNE voltage is:

()

()()

ppm

f306

1353552 106

1335020 ≈

+×+× ×−×

=∆ .

-250

-200

-150

-100

-50

100

150

200

250

00.511.522.533.5

V(XTUNE) - v olts

Deviation - ppm

Figure 3 - Typical VCXO Characteristic

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VCXO Clock Gener ator IC

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4.0 Electrical Specifications

Table 3: Absolute Maximum Ratings

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These conditions represent a stress rating only, and functional operation of the device at

these or any other conditions above the operational limits noted in this specification is not implied. Exposure to maximum rating conditions for extended conditions may affect device performance,

functionality, and reliability.

PARAMETER SYMBOL MIN. MAX. UNITS

Supply Voltage (VSS = ground) VDD VSS-0.5 7 V

Input Voltage, dc VIVSS-0.5 VDD+0.5 V

Output Voltage, dc VOVSS-0.5 VDD+0.5 V

Input Clamp Current, dc (V I < 0 or VI > VDD)I

IK -50 50 mA

Output Clamp Current, dc (VI < 0 or VI > VDD)I

OK -50 50 mA

Storage Temperature Range (non-condensing) TS-65 150 °C

Ambient Temperature Range, Under Bias TA-55 125 °C

Junction Temperature TJ125 °C

Lead Temperature (soldering, 10s) 260 °C

Input Static Disc harge Voltage Protection (MIL-STD 883E, Method 3015.7) 2 kV

CAUTION: ELECTROSTATIC SENSITIVE DEVICE

Permanent damage res ulting in a loss of functi onality or performance may occur if this devic e is subjected to a high-energy elec-

trostatic discharge.

Table 4: Operating Conditions

PARAMETER SYMBOL CONDITIONS/DESCRIPTION MIN. TYP. MAX. UNITS

Supply Voltage (3.3 volt system) VDD 3.0 3.3 3.6 V

Ambient Operating Temperature Range TA070°C

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Table 5: DC Electrical Specifications

Unless otherwise stated, VDD = 3.3V ± 10%, no load on any output, and ambient temperature range TA = 0°C to 70°C. Parameters denoted with an asterisk ( * ) represent nominal characterization

data and are not production tested to any specific limits. Where given, MIN and MAX characterization data are ± 3σ from typical. Negative currents indicate current flows out of the device.

PARAMETER SYMBOL CONDITIONS/DESCRIPTION MIN. TYP. MAX. UNITS

Overall

Supply Current, Dynamic, with Loaded

Outputs IDD fXTAL = 13.5MHz; CL = 10pF, VDD = 3.3V 12 mA

Clock Outputs (CLKx)

High-Level Output Sourc e Current * IOH VO = 2.0V -40 mA

Low-Level Output Sink Current * IOL VO = 0.4V 17 mA

zOH VO = 0.5VDD; out put driving hi gh 25

Output Impedance * zOL VO = 0.5VDD; out put driving l ow 25 Ω

Short Circuit S ource Current * IOSH VO = 0V; shorted for 30s, max. -55 mA

Short Circuit S i nk Current * IOSL VO = 3.3V; shorted for 30s, max. 55 mA

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Table 6: AC Timing Specifications

Unless otherwise stated, VDD = 3.3V ± 10%, no load on any output, and ambient temperature range TA = 0°C to 70°C. Parameters denoted with an asterisk ( * ) represent nominal characterization

data and are not production tested to any specific limits. Where given, MIN and MAX characterization data are ± 3σ from typical.

PARAMETER SYMBOL CONDITIONS/DESCRIPTION MIN. TYP. MAX. UNITS

Overall

Synthesis Error (unless otherwise noted in Frequency Table) 0 ppm

Crystal Oscillator

Center Frequency Tuning Volt-

age VCENTER For c rystal with specified CL(xtal) 1.4 V

Center Frequency Crys tal

Loading Capacit ance CL(xtal)

As seen by a crystal connected to XIN and XOUT

(@VXTUNE=VCENTER). Cryst al loadi ng capacitance at

nominal center frequency should be specified for this

value.

20 pF

Crystal Dri ve Level RXTAL=20Ω;200 uW

Clock Output (CLK)

Duty Cycle * Ratio of high pulse width (as measured from rising edge to next falling

edge at VDD/2) to one clock period 45 55 %

Jitter, Period (peak-peak) * tj(∆P) From rising edge to next rising edge at VDD/2 150 ps

Jitter, Long Term (σy(τ)) * tj(LT) From 0-500µs at VDD/2 compared to ideal clock

source (CLK =27MHz or 27.027MHz) 65 ps

Jitter, Long Term (σy(τ)) * tj(LT) From 0-500µs at VDD/2 compared to ideal clock

source (CLK = 74.175MHz or 74.58MHz) 200 ps

Rise Time * trVDD = 3.3V; VO = 0.3V to 3.0V; CL = 10pF 1.2 ns

Fall Time * tfVDD = 3.3V; VO = 3.0V to 0.3V; CL = 10pF 1.2 ns

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5.0 Package Information

Table 7: 8-pin SOIC (0.150") Package Dimensions

DIMENSIONS

INCHES MILLIMETERS

MIN. MAX. MIN. MAX.

A 0.061 0.068 1.55 1.73

A1 0.004 0.0098 0.102 0.249

A2 0.055 0.061 1.40 1.55

B 0.013 0.019 0.33 0.49

C 0.0075 0.0098 0.191 0.249

D 0.189 0.196 4.80 4.98

E 0.150 0.157 3.81 3.99

e 0.050 BSC 1.27 BSC

H 0.230 0.244 5.84 6.20

h 0.010 0.016 0.25 0.41

L 0.016 0.035 0.41 0.89

Θ0°8°0°8°

SEATING

PLANE

1ALL RADII:

0.005" TO 0.01"

BASE

PLANE

AMERICAN MICROSYSTEMS, INC.

7° typ.h x 45°

Table 8: 8-pin SOIC (0.150") Package Characteristics

PARAMETER SYMBOL CONDITIONS/DESCRIPTION TYP. UNITS

Thermal Impedance, Junction to Free-Air

8-pin 0.150” SOIC ΘJA Air flow = 0 m/s 110 °C/W

Corner lead 2.0

Lead Inductanc e, Self L11 Center lead 1.6 nH

Lead Inductanc e, Mutual L12 Any lead to any adjacent l ead 0.4 nH

Lead Capacitance, Bulk C11 Any lead to VSS 0.27 pF

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6.0 Ordering Information

ORDERING CODE DEVICE NUM BER PACKAGE TYPE OPERATING

TEMPERATURE RANGE SHIPPING

CONFIGURATION

11640-822 FS6205-01 8-pin (0.150”) S OIC

(Small Outl i ne Package) 0°C to 70°C (Commercial) Tape and Reel

11640-832 FS6205-01 8-pin (0.150”) S OIC

(Small Outl i ne Package) 0°C to 70°C (Commercial) Tubes

Devices sold by AMI are covered by the warranty and patent indemnification provisions appearing in its Terms of Sale only. AMI

makes no warranty, express, statutory implied or by description, regarding the information set forth herein or regarding the freedom

of the described devices from patent infringement. AMI makes no warranty of merchantability or fitness for any purposes. AMI re-

serves the right to discontinue production and change specifications and prices at any time and without notice. AMI’s products are

intended for use in commercial applications. Applications requiring extended temperature range, unusual environmental require-

ments, or high reliability applications, such as military, medical life-support or life-sustaining equipment, are specifically not recom-

mended without additional processing by AMI for such applications.

American Microsystems, Inc., 2300 Buckskin Rd., Pocatello, ID 83201, (208) 233-4690, FAX (208) 234-6796,

WWW Address: http://www.amis.com E-mail: tgp@amis.com