MSC040SMA120J - MICROSEMI - Datasheet.Live

050-7738 MSC040SMA120J Datasheet Revision B 1

MSC040SMA120J Silicon Carbide N-Channel Power MOSFET Datasheet

1 Product Overview

This section shows the product overview for the MSC040SMA120J device.

1.1 Features

The following are key features of the MSC040SMA120J device:

Low capacitances and low gate charge

Fast switching speed due to low internal gate resistance (ESR)

Stable operation at high junction temperature, T = 175 °CJ(max)

Fast and reliable body diode

Superior avalanche ruggedness

RoHS compliant

Isolated voltage to 2500 V

1.2 Benefits

The following are benefits of the MSC040SMA120J device:

High efficiency to enable lighter, more compact system

Simple to drive and easy to parallel

Improved thermal capabilities and lower switching losses

Eliminates the need for external freewheeling diode

Lower system cost of ownership

1.3 Applications

The MSC040SMA120J device is designed for the following applications:

PV inverter, converter, and industrial motor drives

Smart grid transmission and distribution

Induction heating and welding

H/EV powertrain and EV charger

Power supply and distribution

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2 Device Specifications

This section shows the specifications for the MSC040SMA120J device.

2.1 Absolute Maximum Ratings

The following table shows the absolute maximum ratings for the MSC040SMA120J device.

Table 1 • Absolute Maximum Ratings

Symbol Parameter Ratings Unit

VDSS Drain source voltage 1200 V

IDContinuous drain current at T = 25 °CC53 A

Continuous drain current at T = 100 °CC37

IDM Pulsed drain current 1105

VGS Gate-source voltage 25 to –10 V

PDTotal power dissipation at T = 25 °CC208 W

Linear derating factor 1.19 W/°C

Note:

Repetitive rating: pulse width and case temperature limited by maximum junction temperature.

The following table shows the thermal and mechanical characteristics for the MSC040SMA120J device.

Table 2 • Thermal and Mechanical Characteristics

Symbol Characteristic Min Typ Max Unit

RθJC Junction-to-case thermal resistance 0.48 0.72 °C/W

TJOperating junction temperature –55 175 °C

TSTG Storage temperature –55 150

VIsolation RMS voltage (50-60 Hz sinusoidal waveform from terminals to

mounting base for 1 minute).

2500 V

Mounting torque, M4 screw 10 lbf-in

1.1 N-m

Wt Package weight 1.03 oz

29.2 g

2.2 Electrical Performance

The following table shows the static characteristics for the MSC040SMA120J device. T = 25 °C unless J

otherwise specified.

Table 3 • Static Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V(BR)DSS Drain-source breakdown

voltage

V = 0 V, I = 100 µAGS D 1200 V

RDS(on) Drain-source on resistance 1V = 20 V, I = 40 AGS D 40 50 mΩ

VGS(th) Gate-source threshold voltage V = V I = 1 mAGS DS, D 1.8 2.8 V

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Symbol Characteristic Test Conditions Min Typ Max Unit

ΔV /ΔTGS(th) J Threshold voltage coefficient

(see Figure 11)

V = V I = 1 mAGS DS, D –4.5 mV/°C

IDSS Zero gate voltage drain

current

V = 1200 V, V = 0 VDS GS 100 µA

V = 1200 V, T = 125 °C,DS J

V = 0 VGS

500

IGSS Gate-source leakage current V = 20 V/–10 VGS ±100 nA

Note:

Pulse test: pulse width < 380 µs, duty cycle < 2%.

The following table shows the dynamic characteristics for the MSC040SMA120J device. T = 25 °C unless J

otherwise specified.

Table 4 • Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Ciss Input capacitance V = 0 V, V = 1000 V, V = 25 mV,GS DD AC

ƒ = 1 MHz

1990 pF

Crss Reverse transfer

capacitance

Coss Output capacitance 156

QgTotal gate charge V = –5 V/20 V, V = 800 V, I = 40 AGS DD D 137 nC

Qgs Gate-source charge 29

Qgd Gate-drain charge 31

td(on) Turn-on delay time V = 800 V, V = 0 V/20 V, I = 40 A,DD GS D

R = 5.3 Ω , Freewheeling diode = G (ext) 1

MSC015SDA120B

10 ns

trCurrent rise time 10

td(off) Turn-off delay time 55

tfCurrent fall time 25

Eon2 Turn-on switching energy 2 930 µJ

Eoff Turn-off switching energy 585

td(on) Turn-on delay time V = 800 V, V = 0 V/20 V, I = 40 A,DD GS D

R = 5.3 Ω , T = 150 °C,G (ext) 1C

Freewheeling diode = MSC015SDA120B

10 ns

trCurrent rise time 10

td(off) Turn-off delay time 74

tfCurrent fall time 37

Eon2 Turn-on switching energy 2 890 µJ

Eoff Turn-off switching energy 855

ESR Equivalent series

resistance

f = 1 MHz, 25 mV, drain short 1.2 Ω

SCWT Short circuit withstand

time

V = 960 V, V = 20 V, T = 25 °CDS GS C 3 µs

EAS Avalanche energy, single

pulse

V = 150 V, V = 20 V, I = 40 A,DS GS D

T = 25 °C, I = 2.5mHC L

2000 mJ

Notes:

R is total gate resistance excluding internal gate driver impedance.G

E includes energy of MSC015SDA120B freewheeling diode.on2

The following table shows the body diode characteristics for the MSC040SMA120J device. T = 25 °C J

unless otherwise specified.

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Table 5 • Body Diode Characteristics

Symbol Parameter Test Conditions Min Typ Max Unit

VSD Diode forward voltage I = 40 A, V = 0 VSD GS 3.9 V

I = 40 A, V = –5 VSD GS 4.1 V

trr Reverse recovery time I = 40 A, V = –5 V,SD GS

V = 800 V, dl/dt = –1000 A/µsDD

100 ns

Qrr Reverse recovery charge 550 nC

IRRM Reverse recovery current 12.5 A

2.3 Typical Performance Curves

This section shows the typical performance curves for the MSC040SMA120J device.

Figure 1 • Drain Current vs. Drain-to-Source Voltage Figure 2 • Drain Current vs. Drain-to-Source Voltage

Figure 3 • Drain Current vs. Drain-to-Source Voltage Figure 4 • Drain Current vs. Drain-to-Source Voltage

Figure 5 • RDS(on) vs. Junction Temperature Figure 6 • Gate Charge Characteristics

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Figure 5 • RDS(on) vs. Junction Temperature Figure 6 • Gate Charge Characteristics

Figure 7 • Capacitance vs. Drain-to-Source Voltage Figure 8 • IDM vs. Gate-to-Source Voltage

Figure 9 • IDM vs. VDS Third Quadrant Conduction Figure 10 • IDM vs. VDS Third Quadrant Conduction

Figure 11 • VGS(th) vs. Junction Temperature Figure 12 • Forward Safe Operating Area

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Figure 11 • VGS(th) vs. Junction Temperature Figure 12 • Forward Safe Operating Area

Figure 13 • Maximum Transient Thermal Impedance

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3 Package Specification

This section shows the package specification for the MSC040SMA120J device.

3.1 Package Outline Drawing

This section shows the SOT-227 package drawing for the MSC040SMA120J device. The dimensions in the

figure below are in millimeters and (inches).

Figure 14 • Package Outline Drawing

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050-7738 | April 2019 | Preliminary