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IRHM7160IRHM7160
IRHM7160IRHM7160
IRHM7160 Pre-IrradiationPre-Irradiation
Pre-IrradiationPre-Irradiation
Pre-Irradiation
Note: Corresponding Spice and Saber models are available on the G&S Website.Note: Corresponding Spice and Saber models are available on the G&S Website.
Note: Corresponding Spice and Saber models are available on the G&S Website.Note: Corresponding Spice and Saber models are available on the G&S Website.
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and CharacteristicsSource-Drain Diode Ratings and Characteristics
Source-Drain Diode Ratings and CharacteristicsSource-Drain Diode Ratings and Characteristics
Source-Drain Diode Ratings and Characteristics
ParameterParameter
ParameterParameter
Parameter MinMin
MinMin
Min TypTyp
TypTyp
Typ MaxMax
MaxMax
Max UnitsUnits
UnitsUnits
Units Test ConditionsTest Conditions
Test ConditionsTest Conditions
Test Conditions
ISContinuous Source Current (Body Diode) 35*
ISM Pulse Source Current (Body Diode) ➀ 140
VSD Diode Forward Voltage 1.8 V Tj = 25°C, IS = 35A, VGS = 0V ➃
trr Reverse Recovery Time 520 nS Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge 6.1 µC VDD ≤ 50V ➃
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal ResistanceThermal Resistance
Thermal ResistanceThermal Resistance
Thermal Resistance
ParameterParameter
ParameterParameter
Parameter MinMin
MinMin
Min TypTyp
TypTyp
Typ MaxMax
MaxMax
Max UnitsUnits
UnitsUnits
Units Test ConditionsTest Conditions
Test ConditionsTest Conditions
Test Conditions
RthJC Junction-to-Case 0.50
RthJA Junction-to-Ambient 48 °C/W Typical socket mount
RthCS Case-to-Sink 0.21
Electrical CharacteristicsElectrical Characteristics
Electrical CharacteristicsElectrical Characteristics
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)@ Tj = 25°C (Unless Otherwise Specified)
@ Tj = 25°C (Unless Otherwise Specified)@ Tj = 25°C (Unless Otherwise Specified)
@ Tj = 25°C (Unless Otherwise Specified)
ParameterParameter
ParameterParameter
Parameter MinMin
MinMin
Min TypTyp
TypTyp
Typ MaxMax
MaxMax
Max UnitsUnits
UnitsUnits
Units Test ConditionsTest Conditions
Test ConditionsTest Conditions
Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 V VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown 0.107 V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State 0.045 ΩVGS = 12V, ID =35A
Resistance
VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 1.0mA
gfs Forward Transconductance 16 S ( )V
DS > 15V, IDS = 35A ➃
IDSS Zero Gate Voltage Drain Current 25 VDS= 80V ,VGS=0V
250 VDS = 80V,
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse -100 VGS = -20V
QgTotal Gate Charge 310 VGS =12V, ID =35A
Qgs Gate-to-Source Charge 53 nC VDS = 50V
Qgd Gate-to-Drain (Miller) Charge 110
td(on) Turn-On Delay Time 35 VDD = 50V, ID =35A
trRise Time 150 VGS =12V, RG = 2.35Ω
td(off) Turn-Off Delay Time 150
tfFall Time 130
LS + LDTotal Inductance 6.8 Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires
internally bonded from Source Pin to Drain Pad
Ciss Input Capacitance 5300 VGS = 0V, VDS = 25V
Coss Output Capacitance 1600 pF f = 1.0MHz
Crss Reverse Transfer Capacitance 350
nA
Ω
➃
nH
ns
µA
*Current limited by pin diameter