JANSF2N7432 - International Rectifier

Absolute Maximum RatingsAbsolute Maximum Ratings

Absolute Maximum Ratings

ParameterParameter

Parameter UnitsUnits

UnitsUnits

Units

ID @ VGS = 12V, TC = 25°C Continuous Drain Current 35*

ID @ VGS = 12V, TC = 100°C Continuous Drain Current 35*

IDM Pulsed Drain Current ➀201

PD @ TC = 25°C Max. Power Dissipation 250 W

Linear Derating Factor 2.0 W/°C

VGS Gate-to-Source Voltage ±20 V

EAS Single Pulse Avalanche Energy ➁500 mJ

IAR Avalanche Current ➀35 A

EAR Repetitive Avalanche Energy ➀25 mJ

dv/dt Peak Diode Recovery dv/dt ➂7.3 V/ns

TJOperating Junction -55 to 150

TSTG Storage Temperature Range

Lead Temperature 300 ( 0.063 in.(1.6mm) from case for 10s)

Weight 9.3 (Typical ) g

Pre-IrradiationPre-Irradiation

Pre-Irradiation

International Rectifiers RADHard HEXFET®

technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for both Total Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

oC

A

RADIATION HARDENEDRADIATION HARDENED

RADIATION HARDENED

POWER MOSFETPOWER MOSFET

POWER MOSFET

THRU-HOLE THRU-HOLE

THRU-HOLE (T0-254AA)(T0-254AA)

(T0-254AA)(T0-254AA)

(T0-254AA)

8/14/01

www.irf.com 1

Product SummaryProduct Summary

Product Summary

Part Number Radiation LevelPart Number Radiation Level

Part Number Radiation Level R R

R R

R

DS(on)DS(on)

DS(on) I I

I I

ID D

D D

D QPL Part NumberQPL Part Number

QPL Part NumberQPL Part Number

QPL Part Number

IRHM7160 100K Rads (Si) 0.045Ω35*A JANSR2N7432

IRHM3160 300K Rads (Si) 0.045Ω35*A JANSF2N7432

IRHM4160 600K Rads (Si) 0.045Ω35*A JANSG2N7432

IRHM8160 1000K Rads (Si) 0.045Ω35*A JANSH2N7432

*Current limited by pin diameter

For footnotes refer to the last page

TO-254AATO-254AA

TO-254AA

Features:Features:

Features:

!Single Event Effect (SEE) Hardened

!Low RDS(on)

!Low Total Gate Charge

!Proton Tolerant

!Simple Drive Requirements

!Ease of Paralleling

!Hermetically Sealed

!Ceramic Package

!Light Weight

PD - 91331C

IRHM7160IRHM7160

IRHM7160

JANSR2N7432 JANSR2N7432

JANSR2N7432

100V, N-CHANNEL100V, N-CHANNEL

100V, N-CHANNEL

REF: MIL-PRF-19500/663REF: MIL-PRF-19500/663

REF: MIL-PRF-19500/663

RAD HardRAD Hard

RAD Hard



HEXFETHEXFET

HEXFET

®

TECHNOLOGYTECHNOLOGY

TECHNOLOGY

2www.irf.com

IRHM7160IRHM7160

IRHM7160 Pre-IrradiationPre-Irradiation

Pre-IrradiationPre-Irradiation

Pre-Irradiation

Note: Corresponding Spice and Saber models are available on the G&S Website.Note: Corresponding Spice and Saber models are available on the G&S Website.

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

Source-Drain Diode Ratings and CharacteristicsSource-Drain Diode Ratings and Characteristics

Source-Drain Diode Ratings and Characteristics

ParameterParameter

Parameter MinMin

MinMin

Min TypTyp

TypTyp

Typ MaxMax

MaxMax

Max UnitsUnits

UnitsUnits

Units Test ConditionsTest Conditions

Test ConditionsTest Conditions

Test Conditions

ISContinuous Source Current (Body Diode)   35*

ISM Pulse Source Current (Body Diode) ➀  140

VSD Diode Forward Voltage   1.8 V Tj = 25°C, IS = 35A, VGS = 0V ➃

trr Reverse Recovery Time   520 nS Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs

QRR Reverse Recovery Charge   6.1 µC VDD ≤ 50V ➃

ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Thermal ResistanceThermal Resistance

Thermal Resistance

ParameterParameter

Parameter MinMin

MinMin

Min TypTyp

TypTyp

Typ MaxMax

MaxMax

Max UnitsUnits

UnitsUnits

Units Test ConditionsTest Conditions

Test ConditionsTest Conditions

Test Conditions

RthJC Junction-to-Case   0.50

RthJA Junction-to-Ambient   48 °C/W Typical socket mount

RthCS Case-to-Sink  0.21 

Electrical CharacteristicsElectrical Characteristics

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)@ Tj = 25°C (Unless Otherwise Specified)

@ Tj = 25°C (Unless Otherwise Specified)@ Tj = 25°C (Unless Otherwise Specified)

@ Tj = 25°C (Unless Otherwise Specified)

ParameterParameter

Parameter MinMin

MinMin

Min TypTyp

TypTyp

Typ MaxMax

MaxMax

Max UnitsUnits

UnitsUnits

Units Test ConditionsTest Conditions

Test ConditionsTest Conditions

Test Conditions

BVDSS Drain-to-Source Breakdown Voltage 100   V VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJTemperature Coefficient of Breakdown  0.107  V/°C Reference to 25°C, ID = 1.0mA

Voltage

RDS(on) Static Drain-to-Source On-State   0.045 ΩVGS = 12V, ID =35A

Resistance

VGS(th) Gate Threshold Voltage 2.0  4.0 V VDS = VGS, ID = 1.0mA

gfs Forward Transconductance 16   S ( )V

DS > 15V, IDS = 35A ➃

IDSS Zero Gate Voltage Drain Current   25 VDS= 80V ,VGS=0V

  250 VDS = 80V,

VGS = 0V, TJ = 125°C

IGSS Gate-to-Source Leakage Forward   100 VGS = 20V

IGSS Gate-to-Source Leakage Reverse   -100 VGS = -20V

QgTotal Gate Charge   310 VGS =12V, ID =35A

Qgs Gate-to-Source Charge   53 nC VDS = 50V

Qgd Gate-to-Drain (Miller) Charge   110

td(on) Turn-On Delay Time   35 VDD = 50V, ID =35A

trRise Time   150 VGS =12V, RG = 2.35Ω

td(off) Turn-Off Delay Time   150

tfFall Time   130

LS + LDTotal Inductance  6.8  Measured from Drain lead (6mm /0.25in.

from package) to Source lead (6mm /0.25in.

from package) with Source wires

internally bonded from Source Pin to Drain Pad

Ciss Input Capacitance  5300  VGS = 0V, VDS = 25V

Coss Output Capacitance  1600  pF f = 1.0MHz

Crss Reverse Transfer Capacitance  350 

nA

Ω

➃

nH

ns

µA

*Current limited by pin diameter

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Pre-IrradiationPre-Irradiation

Pre-Irradiation IRHM7160IRHM7160

IRHM7160IRHM7160

IRHM7160

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅

ParameterParameter

Parameter 100 K Rads(Si) 300 - 1000K Rads (Si)

U U

Unitsnits

nitsnits

nits

Test Conditions Test Conditions

Test Conditions

Min Min

Min Max Max

Max Max

Max Min Max Min Max

Min Max Min Max

Min Max

BVDSS Drain-to-Source Breakdown Voltage 100  100  V VGS = 0V, ID = 1.0mA

V/5JD Gate Threshold Voltage 2.0 4.0 1.25 4.5 VGS = VDS, ID = 1.0mA

IGSS Gate-to-Source Leakage Forward  100  100 nA VGS = 20V

IGSS Gate-to-Source Leakage Reverse  -100  -100 VGS = -20 V

IDSS Zero Gate Voltage Drain Current  25  25 µA VDS=80V, VGS =0V

RDS(on) Static Drain-to-Source"➃  0.045  0.062 Ω VGS = 12V, ID =35A

On-State Resistance (TO-3)

RDS(on) Static Drain-to-Source"➃  0.045  0.062 Ω VGS = 12V, ID =35A

On-State Resistance (TO-254AA)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Radiation CharacteristicsRadiation Characteristics

Radiation Characteristics

1. Part numbers IRHM7160 (JANSR2N7432)

2. Part number IRHM3160, IRHM4160 and IRH8160 (JANSF2N7432, JANSG2N7432 and JANSH2N7432)

Fig a.Fig a.

Fig a. Single Event Effect, Safe Operating Area

VSD Diode Forward Voltage"➃  1.8  1.8 V VGS = 0V, IS = 35A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Table 2. Single Event Effect Safe Operating AreaTable 2. Single Event Effect Safe Operating Area

Table 2. Single Event Effect Safe Operating Area

IonIon

Ion LETLET

LETLET

LET Energy Range Energy Range

Energy Range Energy Range

Energy Range VV

VV

VDS(V)DS(V)

DS(V)DS(V)

DS(V)

MeV/(mg/cm )) (MeV) µm)

@ @

@VV

VV

VGSGS

GSGS

GS=0V @=0V @

=0V @=0V @

=0V @VV

VV

VGSGS

GSGS

GS=-5V@=-5V@

=-5V@=-5V@

=-5V@VV

VV

VGSGS

GSGS

GS=-10V@=-10V@

=-10V@=-10V@

=-10V@VV

VV

VGSGS

GSGS

GS=-15V@=-15V@

=-15V@=-15V@

=-15V@VV

VV

VGSGS

GSGS

GS=-20V=-20V

=-20V=-20V

=-20V

Cu 28 285 43 100 100 100 80 60

Br 36.8 305 39 100 90 70 50 

0

20

40

60

80

100

120

0 -5 -10 -15 -20 -25

VGS

VDS

Cu

Br

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IRHM7160IRHM7160

IRHM7160 Pre-IrradiationPre-Irradiation

Pre-IrradiationPre-Irradiation

Pre-Irradiation

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

1

10

100

1000

1 10 100

20µs PULSE WIDTH

T = 25 C

J°

TOP

BOTTOM

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

5.0V

10

100

1000

1 10 100

20µs PULSE WIDTH

T = 150 C

J°

TOP

BOTTOM

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

5.0V

1

10

100

1000

5 6 7 8 9 10 11 12

V = 50V

20µs PULSE WIDTH

DS

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

GS

D

T = 25 C

J°

T = 150 C

J°

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°

V =

I =

GS

D

12V

50A

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Pre-IrradiationPre-Irradiation

Pre-Irradiation IRHM7160IRHM7160

IRHM7160IRHM7160

IRHM7160

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

1 10 100

0

2000

4000

6000

8000

10000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

DS

V

C

=

0V,

C

f = 1MHz

+ C

C SHORTED

GS

iss gs gd , ds

rss gd

oss ds gd

Ciss

Coss

Crss

0 40 80 120 160 200 240 280

0

4

8

12

16

20

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

G

GS

FOR TEST CIRCUIT

SEE FIGURE

I =

D

13

35A

V = 20V

DS

V = 50V

DS

V = 80V

DS

1

10

100

1000

0.4 0.8 1.2 1.6 2.0 2.4

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

V = 0 V

GS

T = 25 C

J°

T = 150 C

J°

1

10

100

1000

1 10 100 1000

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

T

= 150 C

= 25 C

°

J

C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)I , Drain Current (A)

DS

D

100us

1ms

10ms

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IRHM7160IRHM7160

IRHM7160 Pre-IrradiationPre-Irradiation

Pre-IrradiationPre-Irradiation

Pre-Irradiation

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%

V

GS t

d(on)

t

r

t

d(off)

t

f

Fig 10b. Switching Time Waveforms

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

RD

VGS

RG

D.U.T.

+

-

VDD

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

VGS

25 50 75 100 125 150

0

10

20

30

40

50

60

T , Case Temperature ( C)

I , Drain Current (A)

°

C

D

LIMITED BY PACKAGE

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

P

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

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Pre-IrradiationPre-Irradiation

Pre-Irradiation IRHM7160IRHM7160

IRHM7160IRHM7160

IRHM7160

Q

G

Q

GS

Q

GD

V

G

Charge

D.U.T. V

DS

I

D

I

G

3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

12 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp

V

(BR)DSS

I

AS

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

VDS

+

-V

DD

DRIVER

A

15V

20V

V/5

25 50 75 100 125 150

0

200

400

600

800

1000

1200

1400

Starting T , Junction Temperature( C)

E , Single Pulse Avalanche Energy (mJ)

J

AS

°

ID

TOP

BOTTOM

9.8A

14A

22A

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IRHM7160IRHM7160

IRHM7160 Pre-IrradiationPre-Irradiation

Pre-IrradiationPre-Irradiation

Pre-Irradiation

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

➄ Total Dose Irradiation with VTotal Dose Irradiation with V

Total Dose Irradiation with VTotal Dose Irradiation with V

Total Dose Irradiation with VGSGS

GSGS

GS Bias. Bias.

Bias. Bias.

Bias.

12 volt VGS applied and VDS = 0 during

irradiation per MIL-STD-750, method 1019, condition A.

➅ Total Dose Irradiation with VTotal Dose Irradiation with V

Total Dose Irradiation with VTotal Dose Irradiation with V

Total Dose Irradiation with VDSDS

DSDS

DS Bias. Bias.

Bias. Bias.

Bias.

80 volt VDS applied and VGS = 0 during

irradiation per MlL-STD-750, method 1019, condition A.

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

➁ VDD = 25V, starting TJ = 25°C, L=0.82mH

Peak IL = 35A, VGS =12V

➂ ISD ≤ 35A, di/dt ≤ 100A/µs,

VDD ≤ 100V, TJ ≤ 150°C

Foot Notes: Foot Notes:

Foot Notes:

IR WORLD HEADQUARTERS:IR WORLD HEADQUARTERS:

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information..

..

.

Data and specifications subject to change without notice. 08/01

Case Outline and Dimensions  TO-254AACase Outline and Dimensions  TO-254AA

Case Outline and Dimensions  TO-254AA

3.78 ( .149 )

3.53 ( .139 )

-A-

13.84 ( .545 )

13.59 ( .535 ) 6.60 ( .260 )

6.32 ( .249 )

20.32 ( .800 )

20.07 ( .790 ) 13.84 ( .545 )

13.59 ( .535 )

-C-

1.14 ( .045 )

0.89 ( .035 ) 3.81 ( .150 )

1.27 ( .050 )

1.02 ( .040 )

-B-

.12 ( .005 )

3X

2X

3.81 ( .150 )

1 2 3

17.40 ( .685 )

16.89 ( .665 )

31.40 ( 1.235 )

30.39 ( 1.199 )

.50 ( .020 ) M C A M B

.25 ( .010 ) M C

LEGEND

1 - COL

L

2 - EMI

T

3 - GAT

E

IRHM57163SEDIRHM57163SED

IRHM57163SED

IRHM57163SEUIRHM57163SEU

IRHM57163SEU

LEGEND

1- DRAIN

2- SOURCE

3- GATE

BERYLLIA WARNING PER MIL-PRF-19500 BERYLLIA WARNING PER MIL-PRF-19500

BERYLLIA WARNING PER MIL-PRF-19500

Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them

which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids

that will produce fumes containing beryllium.

CAUTION CAUTION

CAUTION