MJD200 MJD210 (R) COMPLEMENTARY SILICON POWER TRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX T4) APPLICATIONS AUDIO AMPLIFIERS 3 1 DESCRIPTION The MJD200 is an Epitaxial-Base NPN transistor designed for low voltage, low power, high gain, audio amplifier applications. The complementary PNP type is MJD210. DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Power Dissipation at T case 25 o C Storage Temperature Max Operating Junction Temperature Value MJD200 MJD210 40 25 8 5 10 12.5 -65 to 150 150 Unit V V V A A W o C o C For PNP types voltage and current values are negative. June 1998 1/4 MJD200 / MJD210 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 10 89.3 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Collector-Emitter Sustaining Voltage (I B = 0) I C = 10 mA I CBO Collector Cut-off Current (I E = 0) V CB = 40 V V CB = 40 V I EBO Emitter Cut-off Current (I C = 0) V BE = 8 V V CE(sat) Collector-Emitter Saturation Voltage I C = 500 mA IC = 2 A IC = 5 A I B = 50 mA I B = 200 mA IB = 1 A V BE(sat) Base-Emitter Saturation Voltage IC = 5 A V BE(on) Base-Emitter On Voltage VCEO(sus) fT h FE Typ. Max. 25 Unit V 0.1 0.1 A A 0.1 A 0.3 0.75 1.8 V V V IB = 1 A 2.5 V IC = 2 A V CE = 1 V 1.6 V Transition Frequency I C = 100 mA f = 10 MHz V CE = 10 V 65 DC Current Gain I C = 500 mA IC = 2 A IC = 5 A V CE = 1 V V CE = 1 V V CE = 2 V 70 45 10 Pulsed: Pulse duration = 300 s, duty cycle 2 % For PNP type voltage and current values are negative. 2/4 Min. T J = 125 o C MHz 180 MJD200 / MJD210 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 L4 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL "A" L2 D = 1 = G 2 = = = = E B2 3 B DETAIL "A" L4 0068772-B 3/4 MJD200 / MJD210 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 4/4