MJD200
MJD210
COMPLEMENTARY SILICON POWER TRANSISTORS
■STM PREFERRED SALESTYPES
■COMP LEM EN TARY PNP - NPN DEVICES
■SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX T4)
APPLICATIONS
■AUDIO AMPLIFIE RS
DESCRIPTION
The MJD200 is an Epitaxial-Base NPN transistor
designed for low voltage, low power, high gain,
audio amplifier applications .
Th e complementar y PNP type is MJD210.
INTERNAL SCHEMATI C DIAG RAM
June 1998
ABS O LUT E MAXIM UM RATI NG S
Symbol Parameter Value Unit
NPN MJD200
PNP MJD210
VCBO Collector-Base Voltage (IE = 0) 40 V
VCEO Collector-Emitter Voltage (IB = 0) 25 V
VEBO Emitter-Base Voltage (IC = 0) 8 V
ICCollector Current 5 A
ICM Collector Peak Current 10 A
Ptot Total Pow er Dissipation at Tcase ≤ 25 oC 12.5 W
Tstg Storage Temperature -65 to 150 oC
TjMax Operating Junction Temperature 150 oC
For PNP types volt ag e and current values are negative.
DPAK
TO-252
(Suff ix "T 4")
13
®
1/4
THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max 10
89.3
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specif ied)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VCEO(sus) Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 10 mA 25 V
ICBO Collector Cut-off
Current (IE = 0) VCB = 40 V
VCB = 40 V TJ = 125 oC0.1
0.1 µA
µA
IEBO Emitter Cut-off Current
(IC = 0) VBE = 8 V 0.1 µA
VCE(sat) Collector-Emitter
Saturation Voltage IC = 500 mA IB = 50 mA
IC = 2 A IB = 200 mA
IC = 5 A IB = 1 A
0.3
0.75
1.8
V
V
V
VBE(sat) Base-Emitter
Saturation Voltage IC = 5 A IB = 1 A 2.5 V
VBE(on) Base-Emitter On
Voltage IC = 2 A VCE = 1 V 1.6 V
fTTransition Frequency IC = 100 mA VCE = 10 V
f = 10 MHz 65 MHz
hFE∗DC Current Gain IC = 500 mA VCE = 1 V
IC = 2 A VCE = 1 V
IC = 5 A VCE = 2 V
70
45
10 180
∗ P ulsed: P ulse duration = 300 µs, d uty cy cle ≤ 2 %
For PNP type voltage and current values are negative.
MJD200 / MJD210
2/4
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039
==
D
L2
L4
1 3
==
B
E
==
B2
G
2
A
C2
C
H
A1
DETAIL "A"
A2
DETAIL "A"
TO-252 (DP AK ) ME CHA NI CAL DAT A
0068772-B
MJD200 / MJD210
3/4
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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. S pecification mentioned in this publication are
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are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1998 STMicroelect ronic s – Print ed in Italy – All Right s Reserve d
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MJD200 / MJD210
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