145 Adams Avenue
Hauppauge, NY
1
1788 USA
T
el:
(631) 435-1
1
10
Fax:
(631) 435-1824
www
.centralsemi.com
PRINCIP
AL
DEVICE TYPES
1N5807 thru 1N581
1
UES1301 thru UES1306
UES1401 thru UES1403
CUDD8-02 Series
GEOMETR
Y
PROCESS DET
AILS
BACKSIDE CA
THODE
R2 (19-September 2003)
Process
GLASS P
ASSIV
A
TED MESA
Die Size
98 x 98 MILS
Die Thickness
12.2 MILS
Anode Bonding Pad
Area
82.5 x 82.5 MILS
T
op Side Metalization
Au - 5,000Å
Back
Side Metalization
Au - 2,000Å
GROSS DIE PER 4 INCH W
AFER
1,170
Central
Semiconductor Corp.
TM
PR
OCESS
CPD18
Ultra Fast R
ectifier
8
Amp Glass Passivated Rectifier Chip
Central
Semiconductor Corp.
TM
PR
OCESS
CPD18
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY
1
1788 USA
T
el:
(631) 435-1
1
10
Fax:
(631) 435-1824
www
.centralsemi.com
R2 (19-September 2003)
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0
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