145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PRINCIPAL DEVICE TYPES
1N5807 thru 1N5811
UES1301 thru UES1306
UES1401 thru UES1403
CUDD8-02 Series
GEOMETRY
PROCESS DETAILS
BACKSIDE CATHODE
R2 (19-September 2003)
Process GLASS PASSIVATED MESA
Die Size 98 x 98 MILS
Die Thickness 12.2 MILS
Anode Bonding Pad Area 82.5 x 82.5 MILS
Top Side Metalization Au - 5,000Å
Back Side Metalization Au - 2,000Å
GROSS DIE PER 4 INCH WAFER
1,170
Central
Semiconductor Corp.
TM
PROCESS CPD18
Ultra Fast Rectifier
8 Amp Glass Passivated Rectifier Chip
Central
Semiconductor Corp.
TM PROCESS CPD18
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com R2 (19-September 2003)
0.001
0 200 400 600 800
