SBM3200 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERMITEa3 UNDER DEVELOPMENT SPECIFICATIONS SUBJECT TO CHANGE ADVANCE INFORMATION Features * * * * * Guard Ring Die Construction for Transient Protection Very Low Leakage Current High Junction Temperature Capability For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material: UL Flammability Classification Rating 94V-0 E A G P 3 D K C C L PIN 1 PIN 3, BOTTOMSIDE HEAT SINK PIN 2 Note: Dim Min Max A 4.03 4.09 B 6.40 6.61 C .864 .914 1.83 NOM D M Case: POWERMITEa3 Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Moisture sensitivity: Level 1 per J-STD-020A Polarity: See Diagram Marking: Type Number Weight: 0.072 grams (approx.) Maximum Ratings H 2 Mechanical Data * * * * J B 1 * * POWERMITEa3 Pins 1 & 2 must be electrically connected at the printed circuit board. E 1.10 G .173 1.14 .203 H 5.01 5.17 J 4.37 4.43 K .173 .203 L .71 .77 M .36 .46 P 1.73 1.83 All Dimensions in mm @ TA = 25C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbol Value Unit VRRM VRWM VR 200 V VR(RMS) 141 V IO 3 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) IFSM 100 A Typical Thermal Resistance Junction to Soldering Point RqJS 2.5 C/W Tj, TSTG -65 to +175 C Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TC = 165C Operating and Storage Temperature Range Electrical Characteristics @ TA = 25C unless otherwise specified Symbol Min Typ Max Unit V(BR)R 200 3/4 3/4 V IR = 5.0mA Forward Voltage (Note 1) VF 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 0.78 0.65 0.85 0.71 V IF = 3A, TS = 25C IF = 3A, TS = 125C IF = 6A, TS = 25C IF = 6A, TS = 125C Reverse Leakage Current (Note 1) IR 3/4 3/4 3/4 3/4 5.0 4.5 mA mA Characteristic Reverse Breakdown Voltage (Note 1) Notes: Test Condition TS = 25C, VR = 200V TS = 125C, VR = 200V 1. Short duration test pulse used to minimize self-heating effect. 01/08/04 10:00AM 1 of 2 www.diodes.com SBM3200 a Diodes Incorporated ADVANCE INFORMATION Ordering Information Notes: (Note 2) Device Packaging Shipping SBM3200-13 POWERMITEa3 5000/Tape & Reel 2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information SBM3200 YYWWK SBM3200 = Product type marking code = Manufacturers' code marking YYWW = Date code marking YY = Last digit of year ex: 02 for 2002 WW = Week code 01 to 52 K = Factory Designator UNDER DEVELOPMENT SPECIFICATIONS SUBJECT TO CHANGE POWERMITE is a registered trademark of Microsemi Corporation. 01/08/04 10:00AM 2 of 2 www.diodes.com SBM3200