Rev.2.00 Sep 07, 2005 page 1 of 6
2SK2144
Silicon N Channel MOS FET REJ03G1001-0200
(Previous: ADE-208-13 49)
Rev.2.00
Sep 07,2005
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No Secondary Breakdown
• Suitable for sw i t c hi ng re gul ator, DC-DC convert e r
Outline
RENESAS Package code: PRSS0003AE-A
(Package name: TO-220C•FM)
D
G
S
1. Gate
2. Drain
3. Source
123
2SK2144
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 600 V
Gate to source voltage VGSS ±30 V
Drain current ID 3 A
Drain peak current ID(pulse)*1 6 A
Body to drain diode reverse drain current IDR 3 A
Channel dissipation Pch*2 25 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V(BR)DSS 600 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0
Zero gate voltage drain current IDSS — — 250 µA VDS = 500 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V
Static drain to Source on state
resistance RDS(on) — 3.8 5.0 Ω I
D = 1 A, VGS = 10 V*3
Forward transfer admittance |yfs| 1.2 2.0 — S ID = 1 A, VDS = 10 V*3
Input capacitance Ciss — 295 — pF
Output capacitance Coss — 70 — pF
Reverse transfer capacitance Crss — 12 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 8 — ns
Rise time tr — 25 — ns
Turn-off delay time td(off) — 65 — ns
Fall time tf — 30 — ns
ID = 1 A, VGS = 10 V,
RL = 30 Ω
Body to drain diode forward v oltage VDF — 0.9 — V IF = 2 A, VGS = 0
Body to drain diode reverse
recovery time trr — 220 — ns
IF = 2 A, VGS = 0,
diF / dt = 100 A / µs
Note: 3. Pulse Test
2SK2144
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Case Temperature T
C
(°C)
Channel Dissipation Pch (W)
Power vs. Temperature Derating
10
1
0.1
0.01
10 100 1,00
0
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
3
0.3
0.03
1 3 30 300
Ta = 25°C
100 µs
1 ms
DC Operation (T
C
= 25
°
C)
PW = 10 ms (1 Shot Pulse)
Operation in this area
is limited by R
DS (on)
10 µs
V
GS
= 3 V
5
20 50
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
4
1
10 30 40
Pulse Test
0
2
34.5 V
4 V
5 V
10 V
3.5 V
Drain Current I
D
(A)
5
410
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
4
1
268
25°C
0
2
3
V
DS
= 20 V
Pulse Test
75°C
T
C
= –25°C
20
820
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage V
DS (on)
(V)
16
4
412160
8
12
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
1 A
I
D
= 2 A
Pulse Test
0.5 A
50
0.2 5
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
20
1
0.1 0.5 20.05
5
10
Static Drain to Source on State
Resistance vs. Drain Current
2
0.5
1
15 V
V
GS
= 10 V
Pulse Test
30
20
10
50 100 150
0
2SK2144
Rev.2.00 Sep 07, 2005 page 4 of 6
10
40 160
Case Temperature TC (°C)
Static Drain to Source on State Resistance
RDS (on) (Ω)
8
2
0 80 120
0
4
6
Static Drain to Source on State
Resistance vs. Temperature
I
D
= 2 A
V
GS
= 10 V
Pulse Test
0.5 A
–40
1 A
5
0.2 5
Drain Current ID (A)
Forward Transfer Admittance yfs (S)
2
0.2
0.1 0.5 2
0.5
1
Forward Transfer Admittance
vs. Drain Current
Tc = –25°C
V
DS
= 20 V
Pulse Test
0.05
0.1
1
25°C
75°C
500
0.2 5
Reverse Drain Current IDR (A)
Reverse Recovery Time trr (ns)
200
20
0.1 0.5 2
5
50
100
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/µs, V
GS
= 0
Ta = 25°C Pulse Test
0.05
10
1
Crss
Coss
1,000
20 50
Drain to Source Voltage VDS (V)
Capacitance C (pF)
10
10 30 40
1
100
Typical Capacitance vs.
Drain to Source Voltage
0
Ciss
V
GS
= 0
f = 1 MHz
500
820
Gate Charge Qg (nc)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
400
100
412160
200
300
V
DS
100 V
20
16
4
0
8
12
V
DD
= 100 V
250 V
400 V
I
D
= 2 A
250 V
V
DD
= 400 V
V
GS
Gate to Source Voltage VGS (V)
500
0.2 5
Drain Current ID (A)
Switching Time t (ns)
200
20
0.1 0.5 2
5
50
100
0.05
10
1
Switching Characteristics
t
f
t
d (on)
t
r
V
GS
= 10 V, PW = 2 µs
duty 1%, V
DD
30 V
t
d (off)
=
..
<
=
2SK2144
Rev.2.00 Sep 07, 2005 page 5 of 6
5
0.8 2.0
Source to Drain Voltage VSD (V)
Reverse Drain Current IDR (A)
4
0.4 1.2 1.6
2
3
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
0
1
5, 10 V V
GS
= 0, –5 V
D = 1 T
C
= 25°C
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot Pulse
TPW
P
DM
D = T
PW
θch–c (t) = γ
S
(t) • θch–c
θch–c = 5.0°C/W, T
C
= 25°C
3
Pulse Width PW (s)
Normalized Transient Thermal Impedance γS (t)
1.0
0.1
0.3
10 µ
0.03
0.01
100 µ10 m 100 m 1 101 m
Normalized Transient Thermal Impedance vs. Pulse Width
Switching Time Test Circuit
Vin Monitor
Vin
10 V
50 Ω
D.U.T
Vout Monitor
R
L
V
DD
30 V
=
..
Waveforms
Vin
Vout
t
d (on)
10%
t
r
t
f
10%
90%
90%
10%
90%
t
d (off)
2SK2144
Rev.2.00 Sep 07, 2005 page 6 of 6
Package Dimensions
10.0 ± 0.3 3.2 ± 0.2
12.0 ± 0.3
2.7 ± 0.2
15.0 ± 0.3
13.6 ± 1.0
0.7 ± 0.1
2.5 ± 0.2
4.5 ± 0.3
2.542.54
1.0 ± 0.2
1.15 ± 0.2
φ
0.6 ± 0.1
4.1 ± 0.3
Package Name
PRSS0003AE-A TO-220CFM / TO-220CFMV
MASS[Typ.]
1.9g
RENESAS CodeJEITA Package Code
Unit: mm
Ordering Information
Part Name Quantity Shipping Container
2SK2144-E 600 pcs Box (Tube)
Note: F or some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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