MOTOROLA SC {XSTRS/R FH 49 De Weae7254 oovq4ay b i 6367254 MOTOROLA SC XSTRS/R FD MOTOROLA = SEMICONDUCTOR SEE TECHNICAL DATA 89D 79434 OD : [ TH 23-H MRFS177 MRF5177A | The RF Line NPN SILICON RF POWER TRANSISTOR equipment. @ Performance @ 400 MHz, 28 Vdc Power Output = 30 W (Min) Gain = 6.0 dB (Min) @ lsothermal Design for Rugged Performance Tested at 30:1 VSWR through all phase angles ,. designed for VHF/UHF power amplifier applications. This device is optimized for rugged performance in 225-400 MHz communications 30 W, 400 MHz RF POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS CASE 1454-09 MRF5177A Rating Symbol Value Unit Coltector-Emitter Voltage VcEO 35 Vdc Collector-Base Voltage Vcso 60 Vde Emitter-Base Voltaga VEBO 4.0 Vde Collector Current Continuous Io 4.0 Ade Base Current iT} 1.0 Adc Total Device Dissipation @ Tc = 25C) (1) Pp 58 Watts Derate Above 25C - 0.33 wiec Storage Temperature Range Tstg ~65 to +200 % applies only when the device is operated as a Class C RF Amplifier. THERMAL CHARACTERISTICS (1) This davica is designed for RF Power Operation. The total davice dissipation rating Characteristic Symbot Max Unit Thermal Resistance, Junction to Case ReJc 3.0 cw STYLEZ T FIN 1, BASE f : Z EMITTER H 3 COLLECTOR CASE 215 MRFS177 a MOTOROLA RF DEVICE DATA 3-924 ean on ar oe Oe cay MOTOROLA SC {XSTRS/R Ft 89 DE feae7254 o079435 a i zoe wae 6367254 MOTOROLA SC (XSTRS/R F) 890 79435 DT-33-// MRF5177, MRF5177A ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) [ Characteristic [symbot [| Min Max Unit | OFF CHARACTERISTICS Coltector-Emitter Braakdown Voltage ViBR)ceo 35 - Vde (l = 50 mAde, Ig = O} Collector-Emitter Breakdown Voltage ViaRICES 60 _ Vdc (Ie = 50 mAdc, Vee = 0) Emitter-Base Breakdown Voltage ViBR)EBO 4.0 - Vde {le = 2.0 mAde, Ig = 0} Collector Cutoff Current IcBo - 2.0 mAdc (Vog = 30 Vde, Ig = 0) ON CHARACTERISTICS DC Currant Gain hre - {ig = 100 mAdc, VcE = 5.0 Vde) 10 100 {Io = 4.0 Ade, Vee = 5.0 Vde) 10 - DYNAMIC CHARACTERISTICS Output Capactiance Cob - 50 . pF (Vgg = 28 Vde, Ig = 0, f = 1.0 MHz) FUNCTIONAL TESTS (Figures 1 and 9) Common-Emitter Amplifier Power Gain Gpe 6.0 _ dB (Pour = 30 W, Vgc = 28 Vdc, f = 400 MHz) Collector Efficiency n 60 % (Pout = 30 W, Voc = 28 Vde, f = 400 MHz) Saturated Power Psat 36 - Watts (Pin = 11 W, Voc = 28 Ve, f = 400 MHz} Electrical Ruggedness VSWR = 30:1 through all phase angles in a 3 second time interval, (Pout = 30 W, Voc = 28 Vide, f = 400 MHz, Tc s 50C) After which, devices will meet Gp_ test limits. FIGURE 1 400 MHz TEST CIRCUIT {Typical Performance Data for 300-5600 MHz Operation) Tr a t cs A = RF OUTPUT r4) RF in Wweur o io ox 012,345 40-40 pF ARCO 422 ot equiva'ent C6,C7 = 100 pF ATE or equiva'ent C8 10,000 pF ATC ar equivetent C91 ORF, 35 Tantalum L1,L2 4 Turns, #20 AWG, 1/4 1D (3 Ferrite Bead, Ferroxcube 56 590-66/3B R1 2.7 ohms, 1/4 W, Carbon Board Matera. 1/16" Teflon Fikergiass a ay 1o2 conner, two-sded = Z1) 0.3" Width, x 2.77 Length 220 0.3" Width, x 2.7" Length FIGURE 2 200-300 MHz TEST CIRCUIT (Typical Performance Data} >Voc = C7 aR CB 4 AF = OUTPUT et ca a 03,02,03,C4 7.0-100 pF ARCO 423 or equivalent RF C566 100 pF Porcelain Chip Capacitor INPUT ZI 6 {ATC-100 or equivalent) 7 10,000 pF Porcelain Chip Capacitor (ATC-100 oF equivatent) CB tO pF, 35-V Tantalum Li,L2 7 Turns #20 AWG, 1/4" 1D Beads, Ferroxcube 56 $90 65/36 Al 2,7 chms, 1/2 W, Carbon Z1 03" Width x 3.39" Length 220 0.37 Wrdth x 4.53" Length Board Materat: 16" Glass Teflon 1oz Copper, 2 sided MOTOROLA RF DEVICE DATA 3-925 MOTOROLA SC {XSTRS/R FF 89 DE Besze7254 oovayas o 9 6367254 MOTOROLA SC (XSTRS/R FD 89D 79436 D=7-33-4) MRF5177, MRF5177A FIGURE 3 OUTPUT POWER varsus FREQUENCY FIGURE 4 OUTPUT POWER versus INPUT POWER 200 MH: 2 oie 300 MHz 400 MHz B B e = =< = = 500 MHz a e 2 5 E & = 2 Pin = 20W 5 < o 3 2 o 3 Voc = 28 Vde Voc = 28 Vde 1.0 30 50 , FREQUENCY (MHz) Fin, INPUT POWER (WATTS) FIGURE 5 OUTPUT POWER versus SUPPLY VOLTAGE FIGURE 6 OUTPUT POWER versus SUPPLY VOLTAGE 40 f= 400 =8.0W f= 200 MHz a a Pin= 30W E 6.0W E 30 = S 20W E 2 2 2 2 5 = o a a eZ 10 Voc SUPPLY VOLTAGE (VOLTS) Voc, SUPPLY VOLTAGE {VOLTS} FIGURE 7 RF POWER DERATING FIGURE 8 SERIES EQUIVALENT IMPEDANCE Voc = 28 Vde Pour = OW Pp. RF POWER DISSIPATION (WATTS) 2 g yee ~\ wet Lip rw Tc, GASE TEMPERATURE (C) 2p. = Conjugate of the optimum load impedance into which the device output operates aia given cutput power, voltage, and frequency. Caen ee eee MOTOROLA RF DEVICE DATA 3-926 e op geen