SMD ESD Protection Diode
Page 1
Comchip Technology CO., LTD.
CPDA10R3V3U-HF
RoHS Device
Features
- Working voltage: 3.3 V
- Low leakage current.
- Low capacitance: 0.5 pF typical (I/O to GND)
Mechanical data
- Case: DFN10P package, molded plastic.
- Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
- Mounting position: Any
Circuit Diagram
Package
GND
REV:B
QW-G7082
- IEC61000-4-2 (ESD)±15kV(Contact)
Pin 3 & 8
I/O
Pin 1
I/O
Pin 2
I/O
Pin 4 I/O
Pin 5
4
3
2
1
GND
5
7
8
9
10 6
I/O I/O I/O I/O
N/C N/C N/C N/C
Halogen Free
Company reserves the right to improve product design , functions and reliability without notice.
= Pin 1 indicator
0.100(2.55)
0.096(2.45)
0.041(1.05)
0.037(0.95)
PIN#1 DOTBYMARKING
0.041(0.55)
0.037(0.45)
0.002(0.05)
MAX.
0.010(0.255)
0.009(0.245)
0.016(0.40)
0.012(0.30)
0.001(0.03)
BSC.
0.018(0.45)
0.014(0.35)
0.023(0.59)
BSC.
0.039(0.99)
0.035(0.89)
0.020(0.50)
BSC.
0.020(0.50)
BSC.
0.079(2.00)
BSC.
DFN10P
Dimensions in inches and (millimeters)
Page 2
Comchip Technology CO., LTD.
SMD ESD Protection Diode
kV
A
W
5
55
ESD
IPP
PPP
°C
-55 to +150
-55 to +125
TJ
Operating temperature range
Peak pulse current ( tp = 8/20 us)
Peak pulse power ( tp = 8/20 us)
Parameter Symbol Value Unit
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
Storage temperature range TSTG
±15
°C
V
3.3
VRWM
Reverse stand-off voltage
Parameter Conditions Symbol Min Typ
Max
Unit
Leakage current
Clamping voltage
IPP = 1A, TP = 8/20us,
I/O Pin to GND VCV
uA
IPP = 5A, TP = 8/20us,
I/O Pin to GND VCV
Dynamic resistance I/O Pin to GND RDYN
REV:B
9
QW-G7082
0.46
VRWM = 3.3V IR0.5
IT = 1 mA VBR
Breakdown voltage 4 V
5.6
Electrical Characteristics (at TA=25°C unless otherwise noted)
Maximum Rating (at TA=25°C unless otherwise noted)
Company reserves the right to improve product design , functions and reliability without notice.
6.5
11
VF
Forward voltage V
1.2
IPP = 8A, TP = 100ns,
I/O Pin to GND VCL V
IPP = 16A, TP = 100ns,
I/O Pin to GND VCL V
13
9.3
Junction capacitance VR = 0V, f = 1MHZ
I/O Pin to GND CjpF
0.5 0.7
Clamping voltage
IF = 10 mA
RATING AND CHARACTERISTIC CURVES (CPDA10R3V3U-HF)
SMD ESD Protection Diode
Page 3
Comchip Technology CO., LTD.
REV:B
QW-G7082
Company reserves the right to improve product design , functions and reliability without notice.
Power Rating, (%)
Fig.4 - Power Rating Derating Curve
Ambient Temperature, ( °C )
20
40
60
80
100
Mounting on glass epoxy PCBs
Fig.3 - Clamping Voltage Vs.
Peak Pulse Current
Clamping Voltage, (V)
Peak Pulse Current, (A)
0
0 25 50 100
75 125
10
0
6
2
134
4
2
Capacitance Between Terminals, (pF)
Fig.5 - Typical Capacitance Between
Terminals Characteristics
0
0.6
1.0
0.8
0.2
0.4
0 3.0 3.3
2.72.1 2.4
1.81.2 1.5
0.90.60.3
Reverse Voltage, (V)
8
5
Time, (us)
0%
20%
40%
60%
80%
100%
0515 25 30
10 20
120%
Percentage of Ipp
e
-t
td= t Ipp/2
Ta=25°C
Peak Valur Ipp
Test Waveform
parameters
tf=8us
td=20us
Fig.1 - 8/20us Peak Pulse Current
Waveform ACC. IEC 61000-4-5
Forward Current, (mA)
100
0
10
1
0.4
Fig.2 - Forward Characteristics
Forward Voltage, (V)
0.6 0.8 1.0 1.2
T =50°CA
TA=25°C
T =12CA
TA=15C
T =75°CA
TLP Voltage, (V)
TLP Current, (A)
Fig.6 - TLP IV Curre
0 18 2016
12 14
106 8
4
2
12
Waveform
Parameters:
tr=8us
td=20us
QW-G7082 Page 4
REV:B
Company reserves the right to improve product design , functions and reliability without notice.
D1
D2
D
W1
T
C
Reel Taping Specification
o
120
Index hole
d
E
F
B W
P
P0
P1
A
B C dD D2D1
E F P P0P1T
SYMBOL
A
W W1
(mm)
(inch) 0.045 ± 0.002 0.104 ± 0.002
0.025 ± 0.002 7.008 ± 0.039 0.531 ± 0.008
SYMBOL
(mm)
(inch) 0.069 ± 0.004 0.138 ± 0.002
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.002
0.315 ± 0.012
1.14 ± 0.05
2.64 ± 0.05
4.00 ± 0.103.50 ± 0.051.75 ± 0.10
13.50 ± 0.200.64 ± 0.05
4.00 ± 0.10
2.00 ± 0.05 8.00 ± 0.30
178.00 ± 1.00
DFN10P
0.20 ± 0.05
0.008 ± 0.002
1.50 + 0.10
- 0
0.059 + 0.004
- 0
Comchip Technology CO., LTD.
SMD ESD Protection Diode
DFN10P
.xxxx
Trailer Device Leader
400mm (min)160mm (min)
.......
.......
....... ..............
....... ..............
End Start
Direction of Feed
60.00 ± 0.50
2.362 ± 0.020
12.00 + 0.50
- 0
0.472 + 0.020
- 0
Page 5
REV:B
Comchip Technology CO., LTD.
SMD ESD Protection Diode
Part Number
CPDA10R3V3U-HF
Marking Code
.E3V3
Marking Code
.E3V3
QW-G7082
Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice.
Suggested PAD Layout
SIZE
(inch)
0.091
(mm)
2.30
1.00
0.38
0.039
0.015
DFN10P
0.30 0.012
E0.30 0.012
A
B
C
D
F0.50 0.020
G0.24 0.009
Standard Packaging
Case Type Qty Per Reel
(Pcs)
3,000
DFN10P
Reel Size
(inch)
7
A
G
C
B
DEF