© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 0 1Publication Order Number:
NTS10120EMFS/D
NTS10120EMFS,
NRVTS10120EMFS
Very Low Leakage
Trench-based Schottky
Rectifier
Features
•Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
•Fast Switching with Exceptional Temperature Stability
•Low Power Loss and Lower Operating Temperature
•Higher Efficiency for Achieving Regulatory Compliance
•Low Thermal Resistance
•High Surge Capability
•NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These are Pb−Free and Halide−Free Devices
Typical Applications
•Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
•High Frequency and DC−DC Converters
•Freewheeling and OR−ing Diodes
•Reverse Battery Protection
•LED Lighting
•Instrumentation
Mechanical Characteristics:
•Case: Epoxy, Molded
•Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
•Lead Finish: 100% Matte Sn (Tin)
•Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
•Device Meets MSL 1 Requirements
TRENCH SCHOTTKY
RECTIFIERS
10 AMPERES
120 VOLTS
http://onsemi.com
1,2,3 5,6
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
TE1012 = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
MARKING
DIAGRAM
TE1012
AYWWZZ
A
A
A
Not Used
C
C
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device Package Shipping†
ORDERING INFORMATION
NTS10120EMFST1G SO−8 FL
(Pb−Free) 1500 /
Tape & Ree
l
NTS10120EMFST3G SO−8 FL
(Pb−Free) 5000 /
Tape & Ree
l
NRVTS10120EMFST1G SO−8 FL
(Pb−Free) 1500 /
Tape & Ree
l
NRVTS10120EMFST3G SO−8 FL
(Pb−Free) 5000 /
Tape & Ree
l
NTS10120EMFS, NRVTS10120EMFS
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR120
V
Average Rectified Forward Current
(Rated VR, TC = 165°C) IF(AV) 10 A
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 163°C) IFRM 20 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 200 A
Storage Temperature Range Tstg −65 to +175 °C
Operating Junction Temperature TJ−55 to +175 °C
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) EAS 100 mJ
ESD Rating (Human Body Model) 3B
ESD Rating (Machine Model) M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
THERMAL CHARACTERISTICS
Characteristic Symbol Typ Max Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) RθJC 1.8 − °C/W
ELECTRICAL CHARACTERISTICS
Rating Symbol Typ Max Unit
Instantaneous Forward Voltage (Note 1)
(IF = 5 A, TJ = 25°C)
(IF = 10 A, TJ = 25°C)
(IF = 5 A, TJ = 125°C)
(IF = 10 A, TJ = 125°C)
VF0.6
0.735
0.515
0.588
−
0.82
−
0.63
V
Instantaneous Reverse Current (Note 1)
(VR = 90 V, TJ = 25°C)
(Rated dc Voltage, TJ = 25°C)
(VR = 90 V, TJ = 125°C)
(Rated dc Voltage, TJ = 125°C)
IR1.0
3.75
2.0
3.1
−
30
−
20
mA
mA
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%.
NTS10120EMFS, NRVTS10120EMFS
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics Figure 2. Maximum Instantaneous Forward
Characteristics
VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)
0.90.70.40.30.20.10
0.1
1
10
100
0.70.50.40.30.20.10
0.1
1
10
100
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)
1009070504030100
1.E−07 1008070605020100
1.E−07
Figure 5. Typical Junction Capacitance Figure 6. Current Derating
VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C)
1001010.1
10
100
1000
10,000
140130120 170110
0
5
10
15
20
25
iF, INSTANTANEOUS FORWARD
CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
IR, INSTANTANEOUS REVERSE CURRENT (A)C, JUNCTION CAPACITANCE (pF)
IF(AV), AVERAGE FORWARD CURRENT (A)
0.5 0.6 0.8 0.6 0.90.8
20 60 80 110 120
1.E−05
1.E−04
1.E−03
1.E−02
1.E−01
1.E+00
IR, INSTANTANEOUS REVERSE CURRENT (A)
30 40 90 120110
1.E−04
1.E−03
1.E−02
1.E−01
1.E+00
TA = 125°C
TA = 150°C
TA = −55°C
TA = 25°C
TA = 125°C
TA = 150°C
TA = −55°C
TA = 25°C
TA = 125°C
TA = 150°C
TA = 25°C
TA = 125°C
TA = 150°C
TA = 25°C
TJ = 25°C
Square Wave
DC
RqJC = 1.8°C/W
TA = 175°C
TA = 175°C
TA = 175°C
1.E−06
TA = 175°C
1.E−05
1.E−06
150 160
1.0 1.1 1.2 1.3 1.0 1.1 1.2 1.3
NTS10120EMFS, NRVTS10120EMFS
http://onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Forward Power Dissipation
IF(AV), AVERAGE FORWARD CURRENT (A)
12106820
0
8
12
24
30
Figure 8. Typical Thermal Characteristics
PULSE TIME (sec)
0.01 0.1 1000.0001 100.00001 0.0010.000001
0.01
0.1
1
10
100
Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case
PULSE TIME (sec)
0.010.001 0.10.0001 10.00001 100.000001
0.01
0.1
1
10
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
R(t) (°C/W)R(t) (°C/W)
414
4
16
1 1000
100 1000
Square Wave
DC
IPK/IAV = 20 IPK/IAV = 10
IPK/IAV = 5
TJ = 175°C
50% Duty Cycle
Single Pulse
20%
10%
5%
2%
1% Assumes 25°C ambient and soldered to
a 600 mm2 − oz copper pad on PCB
50% Duty Cycle
Single Pulse
20%
10%
5%
2%
1%
20
2
10
14
26
6
18
22
28
NTS10120EMFS, NRVTS10120EMFS
http://onsemi.com
5
PACKAGE DIMENSIONS
M3.00 3.40
q0 −−−
_
3.80
12
_
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
2
2
B
A
0.20 C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A0.90 1.00
A1 0.00 −−−
b0.33 0.41
c0.23 0.28
D5.15 BSC
D1 4.70 4.90
D2 3.80 4.00
E6.15 BSC
E1 5.70 5.90
E2 3.45 3.65
e1.27 BSC
G0.51 0.61
K1.20 1.35
L0.51 0.61
L1 0.05 0.17
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 BC
0.05 cL
DETAIL A
A1
e
3 X
c
4 X
C
SEATING
PLANE
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
0.20
M
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
0.475
4.530
1.530
4.560
0.495
3.200
1.330
0.965
2X
2X
3X 4X
4X
PIN 5
(EXPOSED PAD)
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the r ight t o m ake c hanges wit hout f urt her n ot ice t o a ny p roduct s h erein. SCILLC makes n o w arranty, r epresentation o r g uarant ee r egar ding the suit ability o f i t s p r oducts f or a ny
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation s pecial, c onsequential o r i ncidental d amages. “Typical” p arameters w hich m ay b e p rovided i n S CILLC d ata s heets and/or specifications c an a nd d o v ary i n d if ferent a pplicat ions
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under i ts p at ent rights nor the rights o f ot hers. SCILLC products are not d esigned, i nt ended, o r authorized for use as components in s yst ems intended for
surgical implant i nto t he b ody, or o ther a pplications intended t o s upport o r s ustain l ife, or f or a ny o ther a pplication i n w hich t he f ailure o f t he S CILLC p roduct c ould c reate a s ituat ion w here
personal injury or death may occur. Should Buyer purchase or use S CI LLC p roduct s for any such unintended o r u naut horized application, Buyer shall indemnify a nd h o ld S CILLC and
its o f ficers, e mployees, s ubsidiaries, a ff iliates, and distributors h armless a gainst a ll c laims, c osts, d amages, a nd e xpenses, a nd r easonable a ttorney f ees a rising o ut o f, d irectly o r indirectly ,
any claim of personal injury or death associated with such unintended or unauthorized use, even if s u ch c laim a lleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
NTS10120EMFS/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loc
al
Sales Representative
