NEC's SUPER LOW
NOISE HJ FET NE3210S01
DESCRIPTION
NEC's NE3210S01 is a pseudomorphic Hetero-Junction FET
that uses the junction between Si-doped AIGaAs and undoped
InGaAs to create very high mobility electrons. The device
features mushroom shaped TiAl gates for decreased gate
resistance and improved power handling. Its excellent low
noise figure and high associated gain make it suitable for DBS
and commercial systems. The NE 3210S01 is housed in a low
cost plastic package which is available in tape and reel.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
FEATURES
•SUPER LOW NOISE FIGURE:
0.35 dB TYP at f = 12 GHz
•HIGH ASSOCIATED GAIN:
13.5 dB TYP at f = 12 GHz
•GATE LENGTH: LG ≤ 0.20 µm
•GATE WIDTH: WG = 160 µm
PART NUMBER NE3210S01
PACKAGE OUTLINE S01
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
GAAssociated Gain1, VDS = 2 V, ID = 10 mA, f = 12 GHz dB 12 13.5
NF Noise Figure1, VDS = 2 V, ID = 10 mA, f = 12 GHz dB 0.35 0.45
gmTransconductance, VDS = 2 V, ID = 10 mA mS 40 55
IDSS Saturated Drain Current, VDS = 2 V, VGS = 0 V mA 15 40 70
VPGate to Source Cutoff Voltage, VDS = 2 V, ID = 100 µAV-0.2 -0.7 -2.0
IGSO Gate to Source Leakage Current, VGS = -3 V uA 0.5 10
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PACKAGE OUTLINE SO1
1. Source
2. Drain
3. Source
4. Gate
OUTLINE DIMENSION (Units in mm)
2.0 ± 0.2
0.65 TYP
2.0 ± 0.2
4
2
3
1
0.5
TYP
2.0±0.2
1.9 ± 0.2
0.125 ± 0.05
1.6
0.4 MAX
4.0 ± 0.2
1.5 MAX
K
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening tuned for the "generic" type but not each specimen.
California Eastern Laboratories
PART NUMBER SUPPLY FORM MARKING
NE3210S01-T1 Tape & Reel 1000 pcs/reel
NE3210S01-T1B Tape & Reel 4000 pcs/reel
ORDERING INFORMATION
RECOMMENDED
OPERATING CONDITIONS (TA = 25°C)
PART NUMBER NE3210S01
SYMBOLS PARAMETERS UNITS MIN TYP MAX
VDS Drain to Source Voltage V 2 3
IDS Drain Current mA 10 15
PIN Input Power dBm 0
SYMBOLS PARAMETERS UNITS RATINGS
VDS Drain to Source Voltage V 4.0
VGS Gate to Source Voltage V -3.0
IDS Drain Current mA IDSS
IGS Gate Current µA100
PTTotal Power Dissipation mW 165
TCH Channel Temperature °C125
TSTG Storage Temperature °C -65 to +125
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
NE3210S01
FREQ. NFMIN GAΓΓ
ΓΓ
ΓOPT
(GHz) (dB) (dB) MAG ANG Rn/50
VDS = 2 V, ID = 10 mA
2.0 0.25 21.2 0.94 12 0.38
4.0 0.26 19.5 0.80 26 0.33
6.0 0.28 18.2 0.66 44 0.26
8.0 0.30 16.2 0.50 68 0.18
10.0 0.32 14.7 0.38 97 0.11
12.0 0.34 13.5 0.29 133 0.09
14.0 0.42 12.9 0.27 177 0.08
16.0 0.56 12.3 0.33 -129 0.11
18.0 0.72 11.9 0.39 -82 0.23
TYPICAL NOISE PARAMETERS (TA = 25°C)
TYPICAL MOUNT PAD LAYOUT (Units in mm)
2.4 mm TYP
2.4 mm TYP
NE3210S01
Drain Current, I
D
(mA)
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Drain Current, I
D
(mA)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
Gate to Source Voltage, VGS (V)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Drain to Source Voltage, VDS (V)
60
50
40
30
20
10
0
100
85
70
45
30
15
0
0.2-1.20 -1.0 -0.8 -0.6 -0.4 -0.2 0
60
50
40
30
20
10
04.03.53.02.52.01.51.00.5
V
GS
= 0.00 V
0.18 V
0.27 V
0.36 V
0.45 V
0.54 V
0.63 V
0.90 V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Total Power Dissipation, (P
T
) mW
Maximum Stable Gain, MSG (dB)
Maximum Available Gain, MAG (dB)
Forward Insertion Gain, |S
21S
|
2
(dB)
250
200
150
100
50
050100 150 200 250
V
DS
= 2 V
I
D
= 10 mA
12
16
20
24
8
41246810142030
MAG.
MSG.
|S
21S
|
2
Ambient Temperature, TA (°C) Frequency, f (GHz)
Frequency, f (GHz)
Noise Figure, NF
(dB)
Associated Gain, G
A
(dB)
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
V
DS
= 2 V
I
D
= 10 mA
G
A
NF
1.0
0.5
01246810142030
24
20
16
12
8
4
Drain Current, ID (mA)
Noise Figure, NF (dB)
NOISE FIGURE and ASSOCIATED
GAIN vs. DRAIN CURRENT
Associated Gain, G
A
(dB)
V
DS
= 2 V
f = 12 GHz G
A
NF
1.5
2.0
1.0
0.5
0102030
14
15
13
12
11
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
NE3210S01
j50
j25
j10
0
-j10
-j25
-j50
-j100
10 25 50 100
j100
0
S
11
26.5 GHz
S
11
0.1 GHz
S
22
0.1 GHz
S
22
26.5 GHz
120˚ 90˚ 60˚
30˚
150˚
180˚
-150˚
-120˚ -90˚ -60˚
-30˚
0˚
S12
0.1 GHz
S12
26.5 GHz
S21
0.1 GHz
S21
26.5 GHz
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
FREQUENCY S11 S21 S12 S22 K MAG1
GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB)
0.10 1.001 -1.14 3.405 178.54 0.001 82.96 0.732 -0.85 -0.03 34.20
0.20 1.000 -2.12 3.393 177.73 0.003 88.10 0.731 -1.97 0.00 30.64
0.30 1.000 -3.08 3.393 176.83 0.004 88.76 0.732 -3.04 -0.03 28.99
0.40 0.999 -4.18 3.396 175.50 0.006 86.87 0.732 -3.93 0.04 27.65
0.50 0.997 -4.94 3.345 173.68 0.007 85.87 0.735 -4.73 0.08 26.76
0.70 0.995 -6.83 3.347 171.18 0.010 84.12 0.735 -6.68 0.11 25.30
1.00 0.992 -10.11 3.350 167.44 0.014 81.51 0.732 -9.24 0.12 23.77
1.50 0.987 -15.20 3.346 161.27 0.021 77.55 0.726 -13.91 0.15 22.03
2.00 0.978 -20.81 3.362 154.97 0.028 73.36 0.718 -18.29 0.19 20.82
2.50 0.968 -26.46 3.373 148.74 0.035 69.02 0.709 -22.77 0.23 19.89
3.00 0.954 -32.09 3.388 142.45 0.041 64.57 0.698 -27.41 0.27 19.15
3.50 0.938 -37.61 3.386 136.09 0.047 59.71 0.685 -32.00 0.33 18.54
4.00 0.920 -43.04 3.381 129.89 0.053 54.85 0.670 -36.40 0.39 18.06
5.00 0.879 -53.83 3.378 117.91 0.062 45.72 0.638 -44.54 0.50 17.34
6.00 0.835 -64.32 3.428 106.08 0.070 38.30 0.604 -52.54 0.60 16.93
7.00 0.778 -77.53 3.525 92.97 0.081 29.68 0.553 -62.26 0.68 16.40
8.00 0.680 -92.29 3.539 78.21 0.086 17.34 0.469 -73.32 0.89 16.15
9.00 0.589 -109.87 3.527 63.32 0.091 7.85 0.398 -86.69 1.03 14.86
10.00 0.505 -127.92 3.432 49.90 0.089 0.93 0.335 -97.84 1.22 13.05
11.00 0.481 -149.57 3.490 35.80 0.096 -2.08 0.302 -114.77 1.14 13.32
12.00 0.461 -175.91 3.442 19.40 0.104 -10.23 0.250 -139.98 1.11 13.13
13.00 0.453 155.80 3.273 3.28 0.107 -18.84 0.210 -173.02 1.16 12.40
14.00 0.468 129.34 3.017 -12.03 0.104 -26.21 0.214 151.67 1.27 11.50
15.00 0.521 109.11 2.774 -25.92 0.102 -31.03 0.256 126.40 1.30 11.09
16.00 0.587 92.69 2.545 -39.53 0.098 -35.03 0.309 109.03 1.30 10.89
17.00 0.658 79.53 2.325 -53.80 0.098 -38.38 0.389 95.15 1.18 11.16
18.00 0.720 68.06 2.045 -67.87 0.096 -43.64 0.476 82.56 1.10 11.42
19.00 0.762 58.38 1.773 -79.76 0.093 -47.93 0.553 74.44 1.03 11.69
20.00 0.793 51.94 1.537 -89.63 0.089 -50.59 0.603 67.90 1.02 11.62
21.00 0.819 48.37 1.366 -97.66 0.089 -52.07 0.640 62.36 0.94 11.85
22.00 0.849 43.44 1.238 -106.37 0.090 -56.92 0.685 57.59 0.77 11.36
23.00 0.866 38.86 1.124 -116.19 0.089 -63.10 0.721 52.26 0.65 11.02
24.00 0.863 34.84 1.009 -124.88 0.087 -67.53 0.748 48.09 0.63 10.67
25.00 0.868 29.14 0.949 -132.34 0.084 -71.30 0.751 46.97 0.60 10.54
26.00 0.865 28.40 0.918 -138.91 0.086 -71.66 0.736 40.30 0.66 10.26
26.50 0.859 28.76 0.895 -143.63 0.084 -74.09 0.744 34.46 0.69 10.25
NE3210S01
VD = 2 V, ID = 5 mA
Coordinates in Ohms
Frequency in GHz
VD = 2 V, ID = 5 mA
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Note:
1. Gain Calculation:
MAG = |S
21
|
|S
12
|K - 1
).
2
(
K ± ∆ = S
11
S
22
- S
21
S
12
When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S
21
|
|S
12
|, K = 1 + | ∆ | - |S
11
| - |S
22
|
222
2 |S
12
S
21
|
,
NE3210S01
j50
j25
j10
0
-j10
-j25
-j50
-j100
10 25 50 100
j100
0
S
11
26.5 GHz
S
11
0.1 GHz
S
22
0.1 GHz
S
22
26.5 GHz
120˚ 90˚ 60˚
30˚
150˚
180˚
-150˚
-120˚ -90˚ -60˚
-30˚
0˚
S12
0.1 GHz
S12
26.5 GHz
S21
0.1 GHz
S21
26.5 GHz
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
FREQUENCY S11 S21 S12 S22 K MAG1
GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB)
0.10 1.000 -1.27 4.899 178.46 0.001 88.31 0.654 -0.82 -0.03 36.47
0.20 1.000 -2.34 4.887 177.42 0.003 87.85 0.653 -2.00 -0.01 32.67
0.30 1.000 -3.43 4.884 176.29 0.004 88.67 0.653 -3.07 -0.01 31.02
0.40 0.999 -4.65 4.886 174.90 0.005 86.60 0.654 -3.96 0.04 29.78
0.50 0.996 -5.48 4.814 172.98 0.006 85.34 0.658 -4.64 0.10 28.83
0.70 0.993 -7.58 4.812 170.21 0.009 84.29 0.657 -6.56 0.13 27.34
1.00 0.989 -11.19 4.806 166.08 0.013 81.96 0.654 -9.07 0.16 25.79
1.50 0.980 -16.80 4.787 159.23 0.019 78.12 0.647 -13.65 0.19 24.05
2.00 0.967 -22.91 4.785 152.33 0.025 74.21 0.638 -17.91 0.25 22.83
2.50 0.951 -29.06 4.770 145.49 0.031 70.41 0.628 -22.27 0.30 21.88
3.00 0.931 -35.15 4.754 138.61 0.037 65.91 0.614 -26.72 0.36 21.12
3.50 0.908 -41.09 4.713 131.78 0.042 61.37 0.599 -31.08 0.43 20.49
4.00 0.882 -46.86 4.663 125.12 0.047 56.77 0.583 -35.15 0.50 19.99
5.00 0.825 -58.15 4.565 112.41 0.055 48.65 0.549 -42.36 0.64 19.22
6.00 0.766 -68.97 4.529 100.03 0.061 42.30 0.515 -49.21 0.75 18.73
7.00 0.694 -82.82 4.537 86.54 0.070 34.76 0.463 -57.82 0.84 18.10
8.00 0.582 -97.90 4.418 71.98 0.074 24.44 0.380 -66.37 1.06 16.21
9.00 0.488 -116.40 4.301 57.78 0.079 16.93 0.314 -77.56 1.18 14.77
10.00 0.407 -135.11 4.109 45.24 0.080 12.32 0.261 -85.89 1.33 13.66
11.00 0.394 -158.15 4.111 31.91 0.091 9.33 0.230 -102.84 1.21 13.79
12.00 0.391 173.89 3.994 16.52 0.102 1.30 0.173 -129.97 1.15 13.56
13.00 0.406 144.90 3.761 1.58 0.108 -7.33 0.132 -172.68 1.16 12.97
14.00 0.441 119.35 3.455 -12.50 0.109 -14.99 0.151 140.72 1.21 12.22
15.00 0.507 101.09 3.183 -25.26 0.111 -21.27 0.208 114.68 1.20 11.89
16.00 0.578 86.36 2.934 -37.87 0.109 -26.89 0.269 98.87 1.18 11.74
17.00 0.652 74.71 2.701 -51.30 0.110 -32.42 0.352 87.44 1.09 12.09
18.00 0.718 64.03 2.400 -64.66 0.108 -39.12 0.440 76.72 1.02 12.66
19.00 0.761 54.95 2.110 -75.90 0.105 -44.73 0.517 69.92 0.97 13.03
20.00 0.790 48.81 1.857 -85.48 0.100 -48.33 0.564 64.15 0.96 12.68
21.00 0.812 45.64 1.679 -93.42 0.100 -50.92 0.597 59.30 0.91 12.25
22.00 0.841 41.18 1.540 -102.29 0.100 -56.31 0.640 55.17 0.77 11.86
23.00 0.857 36.68 1.418 -112.28 0.098 -62.75 0.675 50.52 0.67 11.60
24.00 0.851 32.71 1.291 -121.28 0.095 -67.41 0.702 46.98 0.65 11.32
25.00 0.856 27.01 1.229 -129.13 0.092 -71.40 0.706 46.39 0.61 11.24
26.00 0.849 26.42 1.202 -136.41 0.094 -72.43 0.688 40.12 0.65 11.05
26.50 0.843 26.81 1.180 -141.30 0.093 -74.92 0.694 34.43 0.66 11.04
NE3210S01
VD = 2 V, ID = 10 mA
Coordinates in Ohms
Frequency in GHz
VD = 2 V, ID = 10 mA
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Note:
1. Gain Calculation:
MAG = |S21|
|S12|K - 1 ).
2
(K ± ∆ = S11 S22 - S21 S12
When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21|
|S12|, K = 1 + | ∆ | - |S11| - |S22|
222
2 |S12 S21|,
NE3210S01
j50
j25
j10
0
-j10
-j25
-j50
-j100
10 25 50 100
j100
0
S
11
26.5 GHz
S
11
0.1 GHz
S
22
0.1 GHz
S
22
26.5 GHz
120˚ 90˚ 60˚
30˚
150˚
180˚
-150˚
-120˚ -90˚ -60˚
-30˚
0˚
S
12
0.1 GHz
S
12
26.5 GHz
S
21
0.1 GHz S
21
26.5 GHz
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
FREQUENCY S11 S21 S12 S22 K MAG1
GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB)
0.10 1.001 -1.35 6.350 178.44 0.001 100.26 0.592 -0.73 -0.17 36.97
0.20 1.000 -2.51 6.337 177.12 0.002 90.28 0.589 -1.97 -0.01 34.46
0.30 1.000 -3.69 6.331 175.80 0.004 87.69 0.589 -2.99 0.01 32.52
0.40 0.998 -4.98 6.330 174.36 0.005 87.54 0.590 -3.85 0.05 31.37
0.50 0.995 -5.88 6.237 172.35 0.006 86.52 0.594 -4.39 0.11 30.44
0.70 0.991 -8.15 6.225 169.31 0.008 84.90 0.594 -6.19 0.15 28.93
1.00 0.986 -11.99 6.204 164.85 0.011 82.77 0.591 -8.54 0.19 27.38
1.50 0.974 -17.98 6.159 157.43 0.017 79.05 0.584 -12.82 0.24 25.64
2.00 0.956 -24.42 6.120 150.06 0.022 75.64 0.575 -16.80 0.31 24.38
2.50 0.934 -30.87 6.063 142.74 0.028 71.93 0.564 -20.81 0.38 23.41
3.00 0.908 -37.20 5.992 135.43 0.033 67.90 0.551 -24.92 0.45 22.62
3.50 0.878 -43.32 5.895 128.25 0.037 63.92 0.536 -28.84 0.53 21.97
4.00 0.845 -49.17 5.779 121.34 0.042 59.78 0.521 -32.40 0.61 21.43
5.00 0.777 -60.41 5.554 108.25 0.049 52.66 0.491 -38.43 0.76 20.57
6.00 0.709 -70.94 5.407 95.77 0.054 47.49 0.464 -44.02 0.88 19.97
7.00 0.630 -84.63 5.307 82.35 0.063 40.74 0.417 -51.35 0.96 19.23
8.00 0.513 -99.19 5.065 68.31 0.067 32.02 0.342 -57.35 1.16 16.31
9.00 0.420 -117.65 4.867 54.88 0.074 25.26 0.284 -66.38 1.25 15.21
10.00 0.342 -136.22 4.607 43.14 0.077 21.16 0.239 -72.34 1.34 14.25
11.00 0.334 -159.96 4.577 30.55 0.090 17.65 0.210 -88.57 1.21 14.32
12.00 0.340 170.90 4.426 15.93 0.102 9.26 0.146 -113.66 1.14 14.09
13.00 0.368 141.32 4.158 1.81 0.110 0.21 0.090 -161.41 1.13 13.54
14.00 0.412 115.91 3.825 -11.53 0.114 -8.01 0.112 135.76 1.16 12.85
15.00 0.485 98.43 3.540 -23.59 0.117 -15.36 0.177 108.58 1.14 12.57
16.00 0.560 84.46 3.281 -35.66 0.117 -21.73 0.242 93.80 1.11 12.45
17.00 0.638 73.45 3.045 -48.59 0.118 -28.19 0.327 83.95 1.04 12.92
18.00 0.709 63.12 2.727 -61.63 0.116 -35.54 0.419 74.18 0.98 13.70
19.00 0.755 54.05 2.418 -72.63 0.113 -41.78 0.496 67.89 0.94 13.32
20.00 0.787 47.82 2.146 -82.09 0.108 -46.06 0.543 62.26 0.92 12.99
21.00 0.807 44.84 1.962 -89.92 0.107 -49.01 0.573 57.59 0.88 12.63
22.00 0.837 40.34 1.815 -98.91 0.107 -54.84 0.614 53.81 0.77 12.29
23.00 0.852 35.93 1.686 -109.02 0.105 -61.41 0.648 49.53 0.67 12.07
24.00 0.846 31.86 1.548 -118.22 0.102 -66.55 0.675 46.40 0.64 11.83
25.00 0.849 26.10 1.488 -126.33 0.099 -70.76 0.677 46.14 0.59 11.77
26.00 0.840 25.54 1.467 -134.00 0.101 -72.25 0.655 40.16 0.62 11.62
26.50 0.835 26.02 1.446 -139.10 0.099 -74.52 0.660 34.52 0.63 11.63
NE3210S01
VD = 2 V, ID = 20 mA
Coordinates in Ohms
Frequency in GHz
VD = 2 V, ID = 20 mA
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Note:
1. Gain Calculation:
MAG = |S
21
|
|S
12
|K - 1
).
2
(
K ± ∆ = S
11
S
22
- S
21
S
12
When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S
21
|
|S
12
|, K = 1 + | ∆ | - |S
11
| - |S
22
|
222
2 |S
12
S
21
|
,
NE3210S01
NE3210S01 NONLINEAR MODEL
SCHEMATIC
CGD_PKG
0.001pF
Rsx
0.06 ohms
Lgx
CDS_PKG
0.035PF
CGS_PKG
0.04pF
Rdx
6 ohms
Lsx
0.1nH
SOURCE
DRAIN
Rgx
6 ohms
GATE 0.72nH
Ldx
0.68nH
Q1
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
FET NONLINEAR MODEL PARAMETERS (1)
Parameters Q1 Parameters Q1
VTO -0.798 RG 8
VTOSC 0 RD 0.5
ALPHA 8 RS 3
BETA 0.0952 RGMET 0
GAMMA 0.072 KF 0
GAMMADC 0.065 AF 1
Q2.5 TNOM 27
DELTA 0.5 XTI 3
VBI 0.6 EG 1.43
IS 1e-14 VTOTC 0
N1BETATCE 0
RIS 0 FFE 1
RID 0
TAU 4e-12
CDS 0.12e-12
RDB 5000
CBS 1e-9
CGSO 0.36e-12
CGDO 0.014e-12
DELTA1 0.3
DELTA2 0.6
FC 0.5
VBR Infinity
(1) Series IV Libra TOM Model
Parameter Units
time seconds
capacitance farads
inductance henries
resistance ohms
voltage volts
current amps
UNITS
MODEL RANGE
Frequency: 0.1 to 22.5 GHz
Bias: VDS = 1 V to 3 V, ID = 5 mA to 30 mA
Date: 1/99
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
07/01/2004
